Model based design with PLECS
System Design
MIL Simulation Heat
Software Design
Power input Power Power output
SIL Simulation Load
vi converter io vo
ii
MCU Code Verification
Control
PIL Simulation Measurement
signals
Integration Controller
Reference
HIL Simulation
Prototyping
RCP
Some of our Customers Today
Aerospace: Academic:
Goodrich Aachen, ETH Zürich, KIT, Stuttgart, TUM
Saab Aalborg, DTU, Torino, Milano
GE Aviation Nottingham, Manchester, Strathclyde
Northrop Grumman Wisconsin at Madison, Virginia Tech
US Air Force Toulouse, Grenoble
Automation & Drives: Automotive:
Danfoss, Vestas Bosch, Honda, Toyota
Eaton, Schneider Chrysler, Daimler
Hilti General Motors, Ford
Rockwell Opel, VW, Porsche
Woodward SEG Skoda, Audi, BMW, Ferrari
Electronics: High Power:
Infineon, IR ABB
Intel, Google, Alstom
Panasonic Bombardier
Philips, Fuji GE Energy, GEGR
Tyco, Cree Siemens
Two Versions of PLECS
Both versions of PLECS have identical core capabilities:
Schematic editor and component library
Scope and tools
Models can be exchanged
PLECS Blockset
Fully integrated with Simulink
Uses Simulink solvers
Controls in Simulink or in PLECS Blockset
PLECS Standalone
Complete simulation platform
Optimized solvers
Cost effective
Simulation of Power Electronics at System Level
Fast and efficient
Simple to use
Open component library
Thermal, magnetic, and mechanical modeling domains
Controls modeling and code emulation
Analysis tools built-in
Simulation scripting options
PLECS Scope
Circuit and System Level Modelling
Ideal switch concept
Fast and efficient simulation at system level
Simple to Use
Drag and drop components
Open Component Library
Models are open for customisation
Thermal Modeling Domain
Lookup table approach for speed
Calculate temperatures and losses
Magnetic Modeling Domain
Model complex magnetic structures
Permeance-capacitance analogy
Mechanical Modeling Domain
One-dimensional rotational and translational mechanics
Model mechanical non-linearities
Custom Control Code
Inbuilt C-code editor/compiler
External C-code editor/compiler
State Machine Environment
Build in graphical modeling of state machines
Inbuilt Analysis Tools
Steady-state analysis
Small-signal analysis
Open- and closed-loop transfer functions
Impedance analysis
Simulation Scripting
Inbuilt scripting
External scripting
Parallel execution of simulations
PLECS Scope
Power Electronic “Black Box”
Complex system typically consisting of:
Electrical power circuit
Analog/digital controls
Both parts strongly interact and determine thermal losses
Heat
Power input Power Power output
Load
vi converter vo
ii io
Control
Measurement
signals
Controller
Reference
Modeling vs. Simulation
Modeling
Find essential functionality of target system
Describe components as simple as possible
Enter the design using a modeling language
Simulation
Transform the model into mathematical equations
Solve the equations with specified tolerances
Provide numerical and graphical results
The accuracy of the simulation result depends on the model!
Challenges with Numerical Simulation
Power semiconductors introduce extreme nonlinearity
Simulator must be able to handle rapid switching events
Time constants differ by several orders of magnitude
Small simulation time steps and long simulation times
Fast electrical vs. slow thermal/mechanical dynamics
Accurate component models are not always available
Behavioral models with sufficient accuracy required
e.g. semiconductor devices, magnetic components
Controller modeled along with electrical circuit
Mixed-signal simulation
e.g. digital control
Different Degrees of Simulation Detail
Power circuit modeled as linear transfer function
Small-signal behavior
No switching, no harmonics
Controller design
Power circuit modeled with ideal components
Large-signal behavior, voltage and current waveforms
System performance and controller verification
Power circuit with manufacturer specific components
Parasitic effects (magnetic hysteresis)
Switching transitions (diode reverse recovery)
Component stress (electrical or thermal)
Selection of components
Comparison - SPICE and PLECS
Nodal analysis vs. state-space modeling
R, L, C components are similar
Main difference are the semiconductor models
MOSFET model - SPICE
Detailed physical device model
Has 47 parameters
MOSFET model - PLECS
Simplified behavioural model
Two parameters: Ron and T
High Speed Simulations with Ideal Switches
Conventional continuous diode mode
Arbitrary static and dynamic characteristic
Snubber often required
Ideal diode model in PLECS
Instantaneous on/off characteristic
Optional on-resistance
and forward voltage
Switch Model Comparison Using a Diode Rectifier
Simulation with conventional switch and ideal switch models
Ideal switches are faster and more stable
State-Space Model: Buck Converter Example
State-space description
Switch conducting Diode conducting
Operating Principle of PLECS
Circuit transformed into state-variable system
One set of matrices per switch combination
1 Event
Solver s detection
measure-
continuous ments
inputs B + A C +
Switch manager
D
gate
inputs
Physical model
Variable vs. Fixed Time Step Simulation
Variable Time Step with a continuous solver
Higher accuracy
Adaptive time step depending on tolerance setting
Manages discrete controls sampling
Fixed-time step with a discrete solver
No direct control over accuracy
Tuning step size not easy
Diode switching requires special handling
Discretized subsystem within a continuous-step model possible
Variable-Time Step Simulation: Buck Converter (1)
Transistor conducts
Diode blocks
Variable-Time Step Simulation: Buck Converter (2)
Transistor opens
No path for inductor current
Impulsive voltage across inductor
Variable-Time Step Simulation: Buck Converter (3)
Transistor open
Impulsive voltage closes diode
Variable-Time Step Simulation: Buck Converter (4)
Transistor open
Diode conducts
Variable-Time Step Simulation: Buck Converter (5)
Switch timing Problem:
Diode opens too late
Impulsive voltage across inductor
Variable-Time Step Simulation: Buck Converter (6)
Zero-crossing detection:
Time step is reduced
Diode opens at the zero-crossing
Handling of Non-Sampled Switching Events
Fixed-step solver with zero-crossing detection
Diode currents
Non-sampled
zero-crossing
Backward interpolation Backward interpolation Backward interpolation
ForwardDiode
step 3 starts conducting Forward
Forward step sample Backward interpolation
step time
Sync. with Sync.Forward step time Forward step
with sample
Diode 2 stops conducting
Diode voltage
Non-sampled
zero-crossing
Fixed-Step Simulation - Non-Sampled Events
Sub-cycle interpolation is more accurate
Sub-cycle interpolation No interpolation
Diode current
Diode current
Non-sampled
zero-crossing
Dynamic Diode Model with Reverse Recovery Effect
Diode turn-off behavior can be included for overcurrent estimation
Recovery currents can be seen for different blocking conditions
Dynamic MOSFET/IGBT Models with Limited di/dt
Physical effects can be added to ideal switches