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01 Introduction To Modeling and Simulation

The document discusses the capabilities and applications of PLECS, a simulation tool for power electronics, highlighting its two versions: PLECS Blockset and PLECS Standalone. It outlines the modeling and simulation processes, including various domains like thermal, magnetic, and mechanical, as well as the challenges faced in numerical simulations. Additionally, it compares PLECS with SPICE, emphasizing the differences in semiconductor modeling and simulation detail levels.

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0% found this document useful (0 votes)
11 views18 pages

01 Introduction To Modeling and Simulation

The document discusses the capabilities and applications of PLECS, a simulation tool for power electronics, highlighting its two versions: PLECS Blockset and PLECS Standalone. It outlines the modeling and simulation processes, including various domains like thermal, magnetic, and mechanical, as well as the challenges faced in numerical simulations. Additionally, it compares PLECS with SPICE, emphasizing the differences in semiconductor modeling and simulation detail levels.

Uploaded by

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We take content rights seriously. If you suspect this is your content, claim it here.
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Model based design with PLECS

System Design
MIL Simulation Heat

Software Design
Power input Power Power output
SIL Simulation Load
vi converter io vo
ii
MCU Code Verification
Control
PIL Simulation Measurement
signals

Integration Controller
Reference
HIL Simulation

Prototyping
RCP

Some of our Customers Today


Aerospace: Academic:
Goodrich Aachen, ETH Zürich, KIT, Stuttgart, TUM
Saab Aalborg, DTU, Torino, Milano
GE Aviation Nottingham, Manchester, Strathclyde
Northrop Grumman Wisconsin at Madison, Virginia Tech
US Air Force Toulouse, Grenoble

Automation & Drives: Automotive:


Danfoss, Vestas Bosch, Honda, Toyota
Eaton, Schneider Chrysler, Daimler
Hilti General Motors, Ford
Rockwell Opel, VW, Porsche
Woodward SEG Skoda, Audi, BMW, Ferrari

Electronics: High Power:


Infineon, IR ABB
Intel, Google, Alstom
Panasonic Bombardier
Philips, Fuji GE Energy, GEGR
Tyco, Cree Siemens
Two Versions of PLECS

Both versions of PLECS have identical core capabilities:


Schematic editor and component library
Scope and tools
Models can be exchanged

PLECS Blockset
Fully integrated with Simulink
Uses Simulink solvers
Controls in Simulink or in PLECS Blockset

PLECS Standalone
Complete simulation platform
Optimized solvers
Cost effective

Simulation of Power Electronics at System Level

Fast and efficient


Simple to use
Open component library
Thermal, magnetic, and mechanical modeling domains
Controls modeling and code emulation
Analysis tools built-in
Simulation scripting options
PLECS Scope
Circuit and System Level Modelling

Ideal switch concept


Fast and efficient simulation at system level

Simple to Use

Drag and drop components


Open Component Library

Models are open for customisation

Thermal Modeling Domain

Lookup table approach for speed


Calculate temperatures and losses
Magnetic Modeling Domain

Model complex magnetic structures


Permeance-capacitance analogy

Mechanical Modeling Domain

One-dimensional rotational and translational mechanics


Model mechanical non-linearities
Custom Control Code

Inbuilt C-code editor/compiler

External C-code editor/compiler

State Machine Environment

Build in graphical modeling of state machines


Inbuilt Analysis Tools

Steady-state analysis
Small-signal analysis
Open- and closed-loop transfer functions
Impedance analysis

Simulation Scripting

Inbuilt scripting
External scripting
Parallel execution of simulations
PLECS Scope

Power Electronic “Black Box”

Complex system typically consisting of:


Electrical power circuit
Analog/digital controls
Both parts strongly interact and determine thermal losses

Heat

Power input Power Power output


Load
vi converter vo
ii io

Control
Measurement
signals

Controller
Reference
Modeling vs. Simulation

Modeling
Find essential functionality of target system
Describe components as simple as possible
Enter the design using a modeling language

Simulation
Transform the model into mathematical equations
Solve the equations with specified tolerances
Provide numerical and graphical results

The accuracy of the simulation result depends on the model!

Challenges with Numerical Simulation

Power semiconductors introduce extreme nonlinearity


Simulator must be able to handle rapid switching events

Time constants differ by several orders of magnitude


Small simulation time steps and long simulation times
Fast electrical vs. slow thermal/mechanical dynamics

Accurate component models are not always available


Behavioral models with sufficient accuracy required
e.g. semiconductor devices, magnetic components

Controller modeled along with electrical circuit


Mixed-signal simulation
e.g. digital control
Different Degrees of Simulation Detail

Power circuit modeled as linear transfer function


Small-signal behavior
No switching, no harmonics
Controller design

Power circuit modeled with ideal components


Large-signal behavior, voltage and current waveforms
System performance and controller verification

Power circuit with manufacturer specific components


Parasitic effects (magnetic hysteresis)
Switching transitions (diode reverse recovery)
Component stress (electrical or thermal)
Selection of components

Comparison - SPICE and PLECS

Nodal analysis vs. state-space modeling


R, L, C components are similar
Main difference are the semiconductor models
MOSFET model - SPICE
Detailed physical device model
Has 47 parameters

MOSFET model - PLECS


Simplified behavioural model
Two parameters: Ron and T
High Speed Simulations with Ideal Switches

Conventional continuous diode mode


Arbitrary static and dynamic characteristic
Snubber often required

Ideal diode model in PLECS


Instantaneous on/off characteristic
Optional on-resistance
and forward voltage

Switch Model Comparison Using a Diode Rectifier

Simulation with conventional switch and ideal switch models


Ideal switches are faster and more stable
State-Space Model: Buck Converter Example

State-space description

Switch conducting Diode conducting

Operating Principle of PLECS

Circuit transformed into state-variable system


One set of matrices per switch combination

1 Event
Solver s detection

measure-
continuous ments
inputs B + A C +
Switch manager

D
gate
inputs
Physical model
Variable vs. Fixed Time Step Simulation

Variable Time Step with a continuous solver


Higher accuracy
Adaptive time step depending on tolerance setting
Manages discrete controls sampling

Fixed-time step with a discrete solver


No direct control over accuracy
Tuning step size not easy
Diode switching requires special handling

Discretized subsystem within a continuous-step model possible

Variable-Time Step Simulation: Buck Converter (1)

Transistor conducts
Diode blocks
Variable-Time Step Simulation: Buck Converter (2)

Transistor opens
No path for inductor current
Impulsive voltage across inductor

Variable-Time Step Simulation: Buck Converter (3)

Transistor open
Impulsive voltage closes diode
Variable-Time Step Simulation: Buck Converter (4)

Transistor open
Diode conducts

Variable-Time Step Simulation: Buck Converter (5)

Switch timing Problem:


Diode opens too late
Impulsive voltage across inductor
Variable-Time Step Simulation: Buck Converter (6)

Zero-crossing detection:
Time step is reduced
Diode opens at the zero-crossing

Handling of Non-Sampled Switching Events

Fixed-step solver with zero-crossing detection


Diode currents

Non-sampled
zero-crossing
Backward interpolation Backward interpolation Backward interpolation
ForwardDiode
step 3 starts conducting Forward
Forward step sample Backward interpolation
step time
Sync. with Sync.Forward step time Forward step
with sample
Diode 2 stops conducting
Diode voltage

Non-sampled
zero-crossing
Fixed-Step Simulation - Non-Sampled Events

Sub-cycle interpolation is more accurate

Sub-cycle interpolation No interpolation


Diode current

Diode current
Non-sampled
zero-crossing

Dynamic Diode Model with Reverse Recovery Effect

Diode turn-off behavior can be included for overcurrent estimation


Recovery currents can be seen for different blocking conditions
Dynamic MOSFET/IGBT Models with Limited di/dt

Physical effects can be added to ideal switches

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