Bipolar Junction Transistors

Hiran H E Jayaweera
[email protected]

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Different types and sizes

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Bipolar Junction Transistors
• Also called BJTs
• Made of two pn junctions

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Maximum power and voltage transfer
RS

VS RL VL

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two polarities: npn and pnp
Fabrication of a BJT
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• Emitter is heavily doped (n+) compared to collector

• Base is short and lightly doped

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Biasing
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• BE junction is FB
• BC junction is RB

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Biasing
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Biasing
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Biasing
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• Electrons start moving towards the B from E

• Some electrons get recombined with halls in the B
• The rest of the electrons moves to the C with the help of potential of
the junction
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Biasing
tP – average Lifetime of a - - - - - - - - - - + - - - - - - -
hole (10 us) - - - - - - - - - - + - - - - - - -
tt – average transit time of - - - - - - - - - - + - - - - - - -
electron in P region (0.1 us) - - - - - - - - - - + - - - - - - -
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• When electrons reached to the P region, certain number of

holes will enter to that region to have charge neutrality.
• Halls in the P region will recombine with transiting electrons
• tP / tt =100
• A hole entering to P region can give charge neutrality up to
100 electrons in P region
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Biasing
tP - Lifetime of a hole (10 us) - - - - - - - - - - + - - - - - - -
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• 𝐼𝐵 − 𝑛𝑢𝑚𝑏𝑒𝑟 𝑜𝑓 ℎ𝑜𝑙𝑒𝑠 𝑒𝑛𝑡𝑒𝑟𝑒𝑑 𝑡𝑜 𝑃 𝑟𝑒𝑖𝑜𝑔𝑛 𝑝𝑒𝑟 𝑠𝑒𝑐𝑜𝑛𝑑

𝑡𝑃 𝐼𝐶
• =
𝑡𝑡 𝐼𝐵
• If IB changes IC also changed
• IC does not depend on VBC
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Transistor as a 4-terminal device

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Input characteristic (Comm. E)
• variation of IB with VBE

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Output Characteristic
• IC , (output current) with the collector-emitter voltage, VCE , (output
voltage)

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 Operation region summary

Operation IB or VCE BC and BE Mode

Region Char. Junctions
Cutoff IB = Very Reverse & Open
small Reverse Switch
Saturation VCE = Small Forward & Closed
Forward Switch
Active VCE = Reverse & Linear
Linear Moderate Forward Amplifier
Break- VCE = Beyond Overload
down Large Limits
Summary
• IE = I C + IB
• Cut off
• IB =0, IC=0,
• BE and BC junctions are reverse biased
• Saturation
• IC <  IB
• BE and BC junctions are forward biased
• VBE = 0.7 V, VCE = 0.1 V;
• Active: IC =  IB
• BE junction is forward biased and BC junction is reverse
biased
• VBE = 0.7 V;
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Saturation mode

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Transistor switching circuit
Find suitable values for RC and RB to achieve
following conditions
1. When A=0 V, F=5 V 5V

2. When A=5 V, F=0.1 V (Fix IC at 10 mA ,

beta= 100)
F

A
BJT Transfer Characteristic Curves
• Characteristic curves can be drawn to show other useful parameters of the transistor
• The slope of ICE / IBE is called the Transfer Characteristic (β)

IC

Saturation region

Active region

IB

Cutoff region
BJT Output Characteristic
• collector current (IC) is nearly independent of the collector-emitter voltage
(VCE), and instead depends on the base current (IB)

IB4

IB3

IB2

IB1
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Question
• A bipolar NPN transistor has a DC current gain, () value of 200.
Calculate the base current Ib required to switch a resistive load of 4
mA.

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Answer….
• A bipolar NPN transistor has a DC current gain, () value of 200.
Calculate the base current Ib required to switch a resistive load of 4
mA.

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Question
• An NPN Transistor has a DC base bias voltage, Vb of 10 V and an input
base resistor, Rb of 100 kΩ. What will be the value of the base current
into the transistor.

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Answer….
• An NPN Transistor has a DC base bias voltage, Vb of 10 V and an input
base resistor, Rb of 100 kΩ. What will be the value of the base current
into the transistor.

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Question: Find IB and IC

• In this circuit, the transistor operate in Saturation

mode. Find IB and IC .
• VCC = 5 V, VB = 3 V, RB = 100 Ω, RL = 20 Ω,  = 100

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Question: Find VC

• In this circuit, the transistor operate in Active mode.

Find IB , IC and VC .
• VCC = 5 V, VB = 3 V, RB = 10 kΩ, RL = 100 Ω,  = 100

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Question: Mode of operation

• Find the mode of operation of this transistor

• VCC = 5 V, VB = 5 V, RB = 1 k Ω, RL = 20 Ω,  = 100

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• The circuit shown below is needed to be operated
in the saturation mode with IC= 10 mA. Find
suitable values for RC and RB. (=100)

Vcc =10 V

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LDR – Light Dependant Resistor
6V

Find Vout for

Daylight mode and
Dark mode
Vout

Daylight = 5 kΩ
Dark = 20,000 kΩ

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LDR – Light Dependant Resistor
6V

Find Vout and current

through the diode for
Daylight mode and Dark
mode Vout

Daylight = 5 kΩ
Dark = 20,000 kΩ

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Dark Detector

Daylight = 5 kΩ
Dark = 20,000 kΩ

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Light Detector

Daylight = 5 kΩ
Dark = 20,000 kΩ

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Water detector

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Multiple level

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Why do we need amplifiers?
• Can you hear me now?
• Can you suggest a solution?

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Signal
Signal is an electric current or field which used deliver data from one
place (source) to another(load)
Information carried by electrical signals
• amplitudes of the signals (voltage or current)
• rise time of the signal
• total charge carried by the signal
• shape
• frequencies of the signals

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Amplifiers
• Amplifiers are used to increase amplitude and/or power while
preserving the information in the signal
• Special amplifiers
• Voltage amplifiers
• Current amplifiers
• Charge amplifiers

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Transistor based power amplifier classification
Amplifiers are classified according to the nature of the collector output
current waveform
•A
•B
• AB
•C

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What are the applications of BJTs?
Post your answers to the chat window

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Draw the load lines for the following circuit
• Input operating point

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Input load line
• Input operating point
• Q point can be
changed by changing
VBB or RB

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Output load line
• Output operating point

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Q point – operating point

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Draw the load lines for the following circuit
• Vcc=9 V, Beta=200, Ic=20 mA
• Consider the transistor operates in
active mode as an amplifier
• Find suitable resistors for the
optimum output with the use of load
line

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Draw the load lines for the following circuit
• Vcc=9 V, Beta=200, Ic=20 mA

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Vc=?

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Vc=?
𝐼𝑐 = 𝛽𝐼𝑏

• Phase shift of 180°

• Signal get distorted
• Gain is too high

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Vc=?
𝐼𝑐 = 𝛽𝐼𝑏

• Phase shift of 180°

• R2 works as negative
feedback
• Signals below 0.7 V
cannot be amplifiered

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• Transistor is turn on always

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• Transistor is turn on always
• Caps remove DC

𝑃𝑙𝑜𝑎𝑑
𝑒𝑓𝑓𝑖𝑐𝑖𝑒𝑛𝑐𝑦 =
𝑃𝐷𝐶𝑠𝑢𝑝𝑝𝑙𝑦

• <25%

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Class A amplifier
• Transistor is turn on always
• Cap parallel to the R2 allow
AC to pas through, thus AC
gain depends on the
transistor

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Class B amplifiers

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classes.html
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Class B amplifier
• Efficiency ~ 78%
• Crossover distortion is an issue

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Class AB

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Class C amplifier
• Tuned anplifier
• High frequency sin oscillator
• RF
• Pulses of the output can be
converted into sine wave of
selection

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Designing class A amplifiers
1. VC voltage
2. Divide circuit into source and load
3. output impedance
4. Input impedance
5. Power, voltage, and current selection
6. RE
7. RC
8. R1 and R2
9. Caps
10. RE bypass cap

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R1 RC

R2 RE

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Input impedance
• Apply test voltage and measure
current

• Ri should be calculated for the

signal (time varying)

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Input impedance

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Read the handout1 and complete the task
1. VC voltage
2. Divide circuit into source and load
3. output impedance
4. Input impedance
5. Power, voltage, and current selection
6. RE
7. RC
8. R1 and R2
9. Caps
10. RE bypass cap

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The voltage gain of the amplifier
𝑜𝑢𝑡𝑝𝑢𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑣𝑐
• 𝑔𝑎𝑖𝑛 = =
𝑖𝑛𝑝𝑢𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑣𝑠

• 𝑣𝑠 = 𝑣𝐵
• 𝑉𝐵 = 𝑉𝐵𝐸 + 𝑉𝐸 → Δ𝑉𝐵 = 0 + Δ𝑉𝐸 → 𝑣𝐵 = 𝑣𝐸
• 𝑣𝑠 = 𝑣𝐸 = 𝑖𝐸 𝑅𝐸
• 𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 → Δ𝑉𝐶 = Δ𝑉𝐶𝐶 − Δ(𝐼𝐶 𝑅𝐶 ) → 𝑣𝑐 = 0 − 𝑖𝑐 𝑅𝑐
• 𝑎𝑠𝑠𝑢𝑚𝑖𝑛𝑔 𝑖𝑐 ≈ 𝑖𝐸 → 𝑣𝑐 = −𝑖𝐸 𝑅𝐶
𝑜𝑢𝑡𝑝𝑢𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑣𝑐
• 𝑔𝑎𝑖𝑛 = = =? ? ?
𝑖𝑛𝑝𝑢𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑣𝑠

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The voltage gain of the amplifier
−𝑅𝑐
• gain 𝑎 =
𝑅𝐸
• Gain can be increase by
• increasing RC
• decreasing RE
• RE→0+; gain →∞ which cannot be achieved practically
• Intrinsic emitter resistor rE exists
−𝑅𝑐
• 𝑎=
𝑅𝐸 +𝑟𝐸

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Intrinsic emitter resistor
• rE can be considered as the resistance in the BE junction
𝑑𝑉𝐵𝐸
• 𝑟𝐸 = ← 𝑐𝑎𝑛 𝑏𝑒 𝑐𝑎𝑙𝑐𝑢𝑎𝑡𝑒𝑑
𝑑𝐼𝐸
𝑞 𝑉𝐵𝐸
• 𝐼𝐸 = 𝐼𝑆 (𝑒 𝑘𝐵 𝑇 − 1) where q is charge of an electron -> 𝑘𝐵𝑞𝑇 = 25 𝑚𝑉 at 300 K
𝑑𝑉𝐵𝐸
• Find 𝑟𝐸 =
𝑑𝐼𝐸

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Impedance from base and emitter
• Base side impedance = 𝑅𝑖 = 1 + 𝛽 𝑅𝐸 + 𝑟𝐸
• Emitter side impedance = RE+rE

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Improving the AC gain
−𝑅𝑐
• AC gain 𝑎𝐴𝐶 =
𝑅𝐸 +𝑟𝐸
• When emitter bypass cap CE is added
−𝑅𝑐 −𝑅𝑐
• 𝑎𝐴𝐶 = 𝑎𝐷𝐶 =
𝑟𝐸 𝑅𝐸 +𝑟𝐸

• How do you pick CE ?

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Controlling gains
−𝑅𝑐
• 𝑎𝐴𝐶 =
𝑟𝐸 +𝑅′
−𝑅𝑐
• 𝑎𝐷𝐶 =
𝑅𝐸 +𝑟𝐸

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Find suitable values for R1, R2, RC, and
RE in the following amplifier circuit.
Assume that IC= 1 mA, and VE = 1V.

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Darlington pair
• What is the overall current gain
(IB /IC) of the circuit. Consider
β=100

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Field Effect Transistors -FETs

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History
• The invention of the BJT is remarkable
• The field-effect counterpart of the BJTs is known as the field-
effect transistor (FET)
• Two main types of FETs are very popular
• JFET invented in 1953
• MOSFET invented in 1963.

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THE FIELD-EFFECT TRANSISTOR
Comparison between the BJT and the FET
FET Transistors – Circuit Symbols
MOSFET
• In practice the body and D D
source leads are almost
B
always connected G G B

• Most packages have these S S

leads already connected

JFET
D

S
MOSFET

• Metal-Oxide Semiconductor F.E.T.

• A.K.A. Insulated-Gate FET (IGFET)
• 2 Modes: Enhancement/Depletion
Depletion Mode

• N-Channel
• + Vgs -> More electrons -> More Current
• - Vgs -> Less electrons -> Less current
• P-Channel – Reversed
• Different from BJT
Characteristic Curves for D-type

Current
flow
D

G B

S
Enhancement Mode

• N-Channel
• VGS > Vth -> Turns on device
• VGS < VTH -> No Current
• P-Channel
• Reversed

• Only E-type used now

Modes of Operation

Region Criteria Effect on Current

Current
Cut-off VGS < Vth IDS=0 flow
D
Linear VGS > Vth Transistor acts like a
And variable resistor,
VDS <VGS-Vth controlled by Vgs G B

Saturation VGS > Vth Essentially constant

S
And current
VDS >VGS-Vth
Characteristic Curve for E-type

Current
flow
D

G B

S
Power MOSFET

• Used in high-power applications

• Heat Sink
• Vertical layout
• Not Planar like other transistors
Junction gate FET

• Reverse Bias VGS => Reduces channel size => Reduced Current
• Defaults “on”
JFET as Switch

• Vgs = 0 “on”

• |Vgs|> |Vp| “off”

Vp = Pinch-off or Cut-off Voltage

JFET Properties

• Internal Capacitance

• Bi-directional

• Cut-off voltage is varying for each JFET

• 0.3V – 10V

• N-Channel – Negative VGS

• P-Channel – Positive VGS
• Do not Forward Bias JFET – burn out
JFET Characteristic Curve
Comparison
Property BJT MOSFET JFET
Gm Best Worst Medium
Speed High Medium Low
Noise Moderate Worst Best
Good No Yes Yes
Switch
High-Z Gate No Yes Yes
ESD Less More Less
Sensitivity
CMOS

• Complementary MOS
• Used in Logic Gates
• P-channel (PMOS) to high
• N-channel (NMOS) to low

• HIGH usually +5 V
• LOW usually ground

• Q is high when A = 0, Q is low when A = 1

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