Thanks to visit codestin.com
Credit goes to www.scribd.com

0% found this document useful (0 votes)
11 views3 pages

Edc M Paper 2

The document is an examination paper for the subject 'Electronic Devices and Circuits' with a total duration of 3 hours and a maximum score of 60 marks. It consists of two parts: Part A, which is compulsory and contains 10 questions worth 1 mark each, and Part B, where students must answer one question from each of the five units, each carrying 10 marks. The questions cover various topics related to electronic devices, including diodes, transistors, rectifiers, and field-effect transistors.

Uploaded by

srihari pithala
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
11 views3 pages

Edc M Paper 2

The document is an examination paper for the subject 'Electronic Devices and Circuits' with a total duration of 3 hours and a maximum score of 60 marks. It consists of two parts: Part A, which is compulsory and contains 10 questions worth 1 mark each, and Part B, where students must answer one question from each of the five units, each carrying 10 marks. The questions cover various topics related to electronic devices, including diodes, transistors, rectifiers, and field-effect transistors.

Uploaded by

srihari pithala
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

ELECTRONIC DEVICES AND CIRCUITS

(Common to All Branches)


Time: 3 Hours Max. Marks: 60
Note: (i) This Question Paper consists of Part A and Part B.
(ii) Part A is compulsory, which carries 10 marks. Answer all questions of Part A at one
place only.
(iii) In Part-B, Answer any ONE question from each unit. Each question carries 10
marks and may have a, b as sub questions.
PART – A (10x1 = 10 Marks)
Q.No. Question Marks Bloom’s
Level
1 a) Write the diode current equation? 1M BTL-2

1 b) Explain the break down mechanism in a P-N junction diode? 1M BTL-2

1 c) Define Clamper? 1M BTL-1

1 d) Calculate the value of inductance to use in the Capacitor filter 1M BTL-3


connected to a full wave rectifier operating at 60Hz to provide a dc
output with 4% ripple for a 100 Ω load?

1 e) What is a Transistor? Show the transistor action for the P-N-P and 1M BTL-1
N-P-N transistor?

1 f) Define early effect or base width modulation? 1M BTL-1


1 g) Draw the structure of an N-channel JFET? 1M BTL-4

1 h) Define pinch off voltage? 1M BTL-1

1 i) Explain intrinsic stand –off ratio of UJT? 1M BTL-3

1 j) Mention the operation of PIN diode? 1M BTL-2

PART – B (5x10 = 50 Marks)


Blooms
S.No Question Marks
Level
UNIT-I
2 a) Sketch the V-I characteristics of p-n junction diode for forward bias voltages and 5M BTL-3
reverse bias voltage.

b) Explain the concept of diode capacitance. Derive expression for transition 5M BTL-3
capacitance?
OR
3 a) Explain P-N junction diode switching time? Explain (i) Storage time (ii) 5M BTL-2
Transition time (iii) Reverse recovery time with the help of waveforms?
b) Explain the concept of diode capacitance. Derive expression for diffusion 5M BTL-3
capacitance?
UNIT – II
4 a) Explain the operation and derive expressions for Half wave rectifier Ripple 5M BTL-3
Factor, Efficiency, Transformer Utilization Factor, Peak inverse Voltage, Form
factor, Peak factor?

b) Explain the operation and derive expressions for Full wave rectifier Ripple 5M BTL-3
Factor, Efficiency, Transformer Utilization Factor, Peak inverse Voltage, Form
Factor Peak factor?

OR

5 a) Derive an expression for the ripple factor in a full wave rectifier using 5M BTL-2
inductor filter?

b) Obtain the ripple factor of a full wave rectifier with capacitor filter? 5M BTL-4

UNIT-III

6 a) Draw the circuit diagram of a PNP junction transistor CB configuration and 5M BTL-3
describe the static input and output characteristics. Also define active region,
saturation region and cut off region of a transistor in common Base
configurations?

b) Determine the circuit diagram of a PNP junction transistor CE configuration and 5M BTL-4
describe the static input and output characteristics. Also define active region,
saturation region and cut off region of a transistor in common Emitter
configurations?

OR
7 a) Draw the circuit diagram of an PNP junction transistor CC configuration and 5M BTL-3
describe the static input and output characteristics. Also define active region,
saturation region and cut off region of a transistor in common collector
configurations?

b) Explain the constructional details of Bipolar Junction Transistor? Derive the 5M BTL-2
relation among α, β and γ?
UNIT-IV
8 a) Define pinch-off voltage and transconductance in field effect transistors? 5M BTL-1

b) (i) Describe about MOS Capacitor? 5M BTL-5

(ii) In an n-channel FET, the effective channel width is 3x 10-4 cm and the donor
impurity concentration is 1015 electrons/cm3. Find the pinch-off voltage?

OR
9 a) Explain the construction & operation of a N-channel MOSFET in enhancement 5M BTL-2
and depletion modes with the help of static drain characteristics and transfer
characteristics?

b) With the help of neat sketches and characteristic curves explain the construction 5M BTL-2
& operation of a JFET and mark the regions of operation on the characteristics?

UNIT-V
10 a) Explain the V-I characteristics of Zener diode and Analyze between Avalanche 5M BTL-2
and Zener Break downs?

b) Explain the tunneling phenomenon. Explain the characteristics of tunnel diode 5M BTL-2
with the help of necessary energy band diagrams?

OR

11 a) Sketch the static characteristics and firing characteristics of SCR and explain 5M BTL-3
the shape of the curve?

b) Explain about Varactor diode with necessary sketches? Explain how a variable 5M BTL-2
capacitance can be built using a Varactor diode?

You might also like