BECE206L Analog Circuits
FALL 2022-2023
Typical Problems
Dr.V R Balaji B.E.,M.E.,Ph.D.
Cabin no:Sigma Block,2nd Floor,R32
[email protected]Contact No:7667678242
Course Channel:https://www.youtube.com/channel/UCR8gZmY7YuW0iVMQkFCcmzA
Channel Name:Krithiksai gurukulam
Problem 1 : Calculate the base, collector, and emitter currents
and the C–E voltage for a common-emitter circuit. Calculate the
transistor power dissipation. = 200
The power dissipated in the transistor is given by
In most cases, IC IB and VCE > VBE (on) so that a good first
approximation of the power dissipated is given as
Solution
Problem:2 Calculate the characteristics of a circuit containing an
emitter resistor. For the circuit shown in Figure , let VBE(on) = 0.7
V and = 75. Note that the circuit has both positive and negative
power supply voltages.
The collector and emitter currents are
The collector–emitter voltage is
The relationship between the collector
and emitter currents
P.P:1
(a) The bias voltage in the circuit in Figure is changed to VCC = 9 V.
The transistor current gain is β = 80. Design the circuit such that
ICQ = 0.25 mA and VCEQ = 4.5 V. (b) If the transistor is replaced by a new
one with β = 120, find the new values of ICQ and VCEQ. (c) Sketch the load
line and Q-point for both parts (a) and (b).
Problem: Design a circuit with a single-base resistor to
meet a set of specifications.
Specifications: The circuit configuration to be designed is shown in Figure.
The circuit is to be biased with = +12 V. The transistor quiescent values are to
be = 1 mA and = 6 V.
The collector resistor is found from
The base current is
The base resistor is determined to be
Trade-offs: In this example, we will assume that the resistor values are fixed
and will investigate the effects of the variation in transistor current gain .
The base current is given by
The base current for this circuit configuration is independent of the transistor
current gain.
The collector current is
and the load line is found from
In this circuit configuration with a
single base resistor, the Q-point is not
stabilized against variations in ; as
changes, the Q-point varies
Problem: Analyze a circuit using a voltage divider bias circuit, and determine
the change in the Q-point with a variation in when the circuit contains an
emitter resistor. For the circuit given in Figure, let = 56 k, = 12.2 k, = 2 k, =
0.4 k, = 10 V, (on) = 0.7 V, and = 100
Using the Thevenin equivalent circuit
Writing the Kirchhoff voltage law equation around the B–E loop,
The collector current is
The emitter current is
The quiescent C–E voltage is then
These results show that the transistor is biased in the active region.
If the current gain of the transistor were to decrease to = 50 or increase to
= 150, we obtain the following results:
Problem: Design a bias-stable pnp transistor circuit to meet a set of
specifications
DESIGN EXAMPLE 5.16
Assume transistor parameters of = 80 and (on) = 0.7 V. Standard
resistor values are to be used in the final design.
P.P:2
Problem: Calculate the small-signal voltage gain of the bipolar
transistor circuit shown in Figure
DC Solution: We first do the dc analysis to find the Q-point values. We obtain
AC Solution: The small-signal hybrid- parameters are
The small-signal voltage gain is determined using the small-signal equivalent circuit
Comment: We see that the magnitude of the sinusoidal output voltage is 11.4
times the magnitude of the sinusoidal input voltage.
Determine the small-signal voltage gain and input resistance of a
common-emitter circuit with an emitter resistor. For the circuit in
Figure , the transistor parameters are: β = 100, VBE(on) = 0.7 V,
and VA =∞.
Steps:
1.DC Analysis
2.AC analysis
1.Resistance
2.Gain
From a dc analysis of the circuit, we can determine that ICQ =2.16 mA and VCEQ =
4.81 V, which shows that the transistor is biased in the
forward-active mode.
Small Signal Hybrid Parameters
Practice Problems:3
For the circuit in Figure assume transistor
parameters of β = 150,VBE(on) = 0.7 V, and
VA = 200 V. The circuit parameters are VCC
= 7.5 V,VBB = 0.92 V, RB = 100 k, and RC =
15 k. (a) Determine the small-signal
hybrid-π parameters gm, rπ , and ro.
Similar (PNP): Refer page:387
Practice Problems:4
Determine the small-signal voltage gain and input resistance of a
common-emitter circuit with an emitter resistor. For the circuit in Figure , the
transistor parameters are: β = 120, VBE(on) = 0.7 V, and VA =∞.
RE 0.6k
RC 5.6k
R1 250k
R2 75k
(a) determine the small-signal voltage gain Av.
(b) Determine the input resistance looking into
the base of the transistor.
Problem 1
Calculate the corner frequency and maximum gain of a bipolar common emitter
circuit with a coupling capacitor
From a dc analysis,
Basic Formulas
R2 9.6
V TH VCC 10 1.6V
R1 R2 9.6 51.2
R1 R2 51.2 9.6
RB 8.8k
R1 R2 (51.2 9.6)
V TH VBE 1.6 0.7
IB 1.829 105
RB (1 ) RE 8.8 10 (101)(0.4 10 )
3 3
I C I B 1.81mA
I CQ 1.81 103
gm 69mA / V
VT 0.026
VT 0.026 100
r 1.44k
I CQ 1.81mA
From a AC analysis,
PP:5
Coupling and Load Capacitors
Determine the midband gain, corner
frequencies, and bandwidth of a
circuit containing both a coupling capacitor and
a load capacitor.
Consider the circuit shown in Figure with
transistor parameters VBE(on) =
0.7 V, β = 100, and VA =∞.
Solution:
The dc analysis of this circuit yields a quiescent collector current of ICQ = 0.99 mA. The small-
signal parameters are gm = 38.08 mA/V, rπ = 2.626 k,
and ro =∞
A multistage transistor circuit
The Thevenin equivalent circuit of the base circuit of Q1 and The Thevenin
resistance and voltage are
Kirchhoff’s voltage law equation around the B–E loop of Q1 is
Summing the currents at the collector of Q1, we obtain
The base current IB2 can be written in terms of the emitter current IE2
Problem: Design a bias-stable pnp transistor circuit to meet a set of
specifications
Assume transistor parameters of = 80 and (on) = 0.7 V. Standard
resistor values are to be used in the final design.
2
