Data and Result:
Part A – determine graph of forward biases for silicon and germanium diode
Part B
Silicon Diode
Vf Forward (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7
If Forward 0 0 0 0.01 0.13 0.83 2.92
(mA)
Table 1
VR Reverse (V) 1.0 2.0 3.0 4.0 5.0
IR Rervese (µA) 0 0 0 0 0
Table 2
Germanium Diode
Vf Forward (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7
If Forward 0.02 0.23 0.78 1.58 2.45 3.45 4.44
(mA)
Table 1
VR Reverse (V) 1.0 2.0 3.0 4.0 5.0
IR Rervese (µA) 0 0.17 0.43 0.58 0.76
Table 2
Analysis of Data:
Graph For Germanium Diode
The Graph Of Current Verses Voltage For
current
Germanium Diode In Reverse Biased
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1 2 3 4 5
The Graph Of Current Verses Voltage For
current Silicon In Reverse Biased
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1 2 3 4 5
Graph For Germanium Diode
current
The Graph Of Current Verses Voltage For Ger-
nanium Diode In Forward Biased
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
The Graph Of Current Verses Voltage For Ger-
current manium Diode In Reverse Biased
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1 2 3 4 5
Discussion:
A diode is a semiconductor device that allows current flow in one direction only. It
blocks the flow of current in the opposite direction. It can be used as a rectifier which
converts AC (alternating current) to a pulsating DC (direct current) for a power supply
device. There are two common materials for diodes are silicon and germanium. The
potential difference (voltage) set up in the depletion layer by the combining holes and
electrons. This must be overcome for the diode to conduct.
The construction of a silicon diode starts with purified silicon. Each side of the
diode is implanted with impurities where the boron on the anode, arsenic on the cathode.
As a result, a p-n junction is formed at the boundary between a p-type and n-type
semiconductor created in a single crystal of semiconductor by doping or by ion
implantation. This is the joint where both different impurities meet. Silicon diode has a
forward-bias voltage or built-in voltage of 0.7V. Once the voltage differential between
anode and cathode reaches 0.7V, the diode starts to conduct electrical current across its p-
n junction. The voltage differential which drops to less than 0.7V means that the reverse
bias breakdown voltage is exceeded. At the moment, the p-n junction will stop
conducting electrical current and it will cease to function as an electrical pathway.
From Table 2, the reverse bias for silicon diode shown is 0V. The material of
silicon reveals the good stability. Therefore, it is more suitable to be used for electronics
compared to germanium which has leaked current that can shown through the values for
the reverse bias.
Silicon diode is knows as an excellent general-purpose diode and it can be used in
nearly all electrical circuits where a diode is requited because it is suitable for all high
voltage application. It has much smaller leaked current, only a few nano-Amperes
compared to germanium diode that have 1000 times more leaky than silicon diode.
Germanium diodes are built by combining a pn junction and are doped with
impurities to alter its conductivity. From the graph we obtained we can observed that
germanium diode has a forward biased voltage which is lower than silicon diode.
Theoretically, the built in voltage for germanium will be 0.3 V.
Germanium is a rare material and it is normally even expensive that commercial
silicon diode. There are some characteristics of germanium diode which cannot be
replaced by silicon diode. For example germanium diode are best use in lower power
electrical circuit due to its lower forward biased voltage which results in smaller power
losses and enable a more efficient circuit. In addition, germanium diode’s lower forward
voltage also enables the diodes to detect small signal and small rectification better as
compared to silicon diodes.
However there are also some characteristics of germanium diodes which are said
to be not ideal. Germanium diodes normally spoilt easily as compared to silicon diodes.
This is due to the forward biased voltage of germanium which is small, where we need to
keep the fluctuation of voltage to minimum so that the voltage flow will not exceed the
knee voltage. In addition, the temperature stability of germanium diode is poor because
germanium is more sensitive to temperature. It can be a problem, when the circuit
temperature is too high the diode might blow out.
From the graph that we obtained, we can see that the germanium diode records
reading of current in the condition of forward biased while for reverse biased the diodes
only can records some readings for current.
Under normal condition, the voltage can flow in diode in forward biased condition. A
small increase in the forward voltage will leads to a large increase in forward current. The
value of voltage at which the barrier is overcome is called the knee voltage. The voltage
necessary need to break down a diode is called a breakdown voltage, but normally the
voltage use inside our laboratory
While under reverse biased condition the current theoretically will not flow
through diode because if current started to flow in negative region, the diode will begin to
conduct heavily until the diode burned up. But still we can get reading for germanium
diode, this is because there is few mirco-ampere of leakage voltage. The leakage voltage
is due mainly to thermal activity within the semiconductor material "shaking loose" of
free electrons, which then form the leakage current.
Comparisons between silicon diode and germanium diode
Silicon diode Germanium diode
Silicon diode has higher PIV (peak inverse Germanium diode has lower PIV with
voltage) with maximum as 1000V. maximum as 400V.
Silicon diode has wide operating range. Germanium diode has small operating
range.
Silicon diode has a higher built-in voltage Germanium diode has a lower built-in
(0.7V). voltage (0.3V).
Silicon diode has a lower saturation Germanium diode has a higher saturation
current. current.
Conclusion:
Through the experiment, we can understand clearly about the characteristics of 2 types of
diode which are silicon diode and germanium diode. Besides, the specification of diodes
is recognized. We have learnt to test the characteristics of silicon and germanium diodes
by using oscilloscope and also by multimeter. By identifying and comparing their
characteristics, we can conclude that silicon is more suitable to be used as diode for
electronics compared to germanium. Therefore, silicon diode is an accepted diode while
germanium diode is a defective diode.
References:
Comparison between Silicon and Germanium Diodes. Retrieved on 26 October, 2012
from
http://www.exploreroots.com/a19.html
