1.
The element that doesn’t have three valence electrons
A. Boron.
B. Germanium.
C. Aluminum.
D. Gallium
2. The resistivity of a semiconductor material
A. increases as the temperature increases.
B. decreases as the temperature increases.
C. remains constant even when temperature varies.
D. none of the above
3. Semiconductor material has a
A. zero temperature coefficient of resistance.
B. positive temperature coefficient of resistance.
C. negative temperature coefficient of resistance.
D. none of the above
4. Energy band gap size for insulators is in the range eV.
A. 1-2.
B. 2-3.
C. 3-4.
D. > 4.
5. Forbidden band lies
A. above the conduction band
B. below the valance band
C. between valence and conduction bands
D. None
6. The forbidden bandgap of semiconductor material
A. increases with increase in temperature.
B. decreases with increase in temperature.
C. doesn’t vary with temperature.
D. none of the above
7. Fermi energy level for intrinsic semiconductors lies
A. at middle of the forbidden band gap
B. close to conduction band
C. close to valence band
D. above the conduction band
8. Fermi energy level for N-type extrinsic semiconductors lies
A. at middle of the forbidden band gap
B. close to conduction band
C. close to valence band
D. above the conduction band
9. . Fermi energy level for P-type extrinsic semiconductors lies
A. at middle of the forbidden band gap
B. close to conduction band
C. close to valence band
D. above the conduction band
10. Mobile electrons are found
A. below the valence band
B. below the conduction band
C. in the forbidden gap
D. in the conduction band
11. Mobile holes are found
A. in the valence band
B. below the conduction band
C. in the forbidden gap
D. in the conduction band
12. The donor impurity element is
A. aluminum
B. boron
C. phosphorous
D. indium
13. The acceptor impurity element is
A. antimony
B. gallium
C. arsenic
D. phosphorous
14. The depletion region is created by
A. Ionization. B. Diffusion. C. Recombination. D. All.
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15. The depletion region consists of
A. nothing but minority carriers
B. positive and negative ions
C. no majority carriers
D. B & C
16. To forward-bias a diode,
A. an external voltage is applied that is positive at the anode and negative at the cathode
B. an external voltage is applied that is negative at the anode and positive at the cathode
C. an external voltage is applied that is positive at the p region and negative at the n region
D. answers (A) and (C)
17. The static resistance of a diode is
A. its opposition to the DC current flow.
B. its opposition to the AC current flow.
C. resistance of diode when forward biased
D. none of these
18. When a reverse voltage is applied to a junction diode, it
A. lowers the potential barrier.
B. raises the potential barrier.
C. greatly decreases the minority carrier current
D. greatly increases the majority carrier current
19. If a pn-junction diode is not biased, the junction current at equilibrium is
A. zero as no charges cross the junction.
B. zero as equal number of carriers cross the junction.
C. mainly diffusion of majority carriers
D. mainly diffusion of minority carriers
20. The capacitance appearing across a reverse biased semiconductor junction
A. increases with increase in bias voltage.
B. decreases with increase in bias voltage.
C. is independent of bias voltage
D. none of these
21. Zener break down occurs
A. due to normally generated minority carriers
B. in lightly doped junctions.
C. due to direct rupture of covalent bonds
D. mostly in germanium junction
22. A breakdown which is caused by cumulative multiplication of charge carriers through field induced
impact ionization occurs in
A. zener diode
B. tunnel diode
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C. varactor diode
D. avalanche diode
23. For a highly doped diode
A. zener breakdown likely to take place
B. avalanche breakdown likely to take place
C. either a) or b) likely to take place
D. neither a) nor b) will take place
24. The cathode of a zener diode in a voltage regulator is normally
A. more positive than the anode B. more negative than the anode C. at +0.7 V D. grounded
25. If a certain zener diode has a zener voltage of 3.6 V, it operates in
A. regulated breakdown B. zener breakdown C. forward conduction D. avalanche breakdown
26. A no-load condition means that
A. the load has infinite resistance B. the load has zero resistance C. the output terminals are open
D. answers(A) and (C)
27. The average value of a half-wave rectified voltage with a peak value of 200 V is
A. 63.7 V B. 127.2 V C. 141 V D. 0 V
28. When a 60 Hz sinusoidal voltage is applied to the input of a half-wave rectifier, the output frequency is
A. 120 Hz B. 30 Hz C. 60 Hz D. 0 Hz
29. The peak value of the input to a half-wave rectifier is 10 V. The approximate peak value of the output
is
A. 10 V B. 3.18 V C. 10.7 V D. 9.3 V
30. The average value of a full-wave rectified voltage with a peak value of 75 V is
A. 53 V B. 47.8 V C. 37.5 V D. 23.9 V
31. When the peak output voltage is 100 V, the PIV for each diode in a center-tapped full-wave rectifier is
(neglecting the diode drop)
A. 100 V B. 200 V C. 141 V D. 50 V
32. When the rms output voltage of a bridge full-wave rectifier is 20 V, the peak inverse voltage across the
diodes is (neglecting the diode drop)
A. 20 V B. 40 V C. 28.3 V D. 56.6 V
33. A 10 V peak-to-peak sinusoidal voltage is applied across a silicon diode and series resistor. The maximum
voltage across the diode is
A. 9.3 V B. 5 V C. 10 V D. 4.3 V
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