Paper-Iii: Electronic Science
Paper-Iii: Electronic Science
ELECTRONIC SCIENCE
Signature and Name of Invigilator
1. (Signature) __________________________ OMR Sheet No. : ...............................................
(Name) ____________________________ (To be filled by the Candidate)
Note : This paper contains seventy five (75) objective type questions of two (2) marks each.
All questions are compulsory.
1. Semiconductor materials are made 7. Quantizing Noise occurs in
up of (A) Time-division multiplexing
(A) Metallic bond (B) Frequency-division
(B) Ionic bond multiplexing
(C) Vander Waal’s bond (C) Pulse-Code modulation
(D) Covalent bond (D) Pulse width modulation
2. A UJT has
8. CMRR (Common Mode Rejection
(A) negative resistance characteristics
Ratio) for a differential amplifier
(B) low firing current should be
(C) bipolar device (A) Zero (B) Unity
(D) relax indefinitely
(C) Small (D) Large
(D) v m s–1
30. Which of the following devices is
suitable for very low power oscillator
25. The figure of merit of logic family is circuits only ?
given by (A) TRAPATT diode
(A) gain bandwidth product (B) IMPATT diode
(B) (propagation delay time) × (C) Gunn diode
(power dissipation) (D) Tunnel diode
(C) (fan out) × (propagation delay
time) 31. Thyristors can be turned off by
(D) (noise margin) × (power 1. reducing the current below the
dissipation) holding current value
2. applying a negative voltage to
the anode of the device
26. In a 8085 microprocessor, the 3. Reducing the gate current
resistor which holds address of the
Of these statements :
next instruction to be fetched is
Codes :
(A) Accumulator
(A) 1 & 2 are correct.
(B) Program counter (B) 1 & 3 are correct.
(C) Stack pointer (C) 2 & 3 are correct.
(D) Instructor Register (D) 1, 2 & 3 are correct.
Paper-III 4 J-88-13
32. The 555 timer can be employed in 35. A transducer converts
1. A monostable multivibrator 1. A potential difference is
2. A bistable multivibrator developed across a current
carrying metal strip when the
3. An astable multivibrator
strip is placed in transverse
Of these statements magnetic field.
Codes : 2. The Hall effect is very weak in
(A) 1 & 2 are correct. metals but large in
(B) 1 & 3 are correct. semiconductors.
(C) 2 & 3 are correct. 3. The Hall effect is very weak in
(D) 1, 2 & 3 are correct. semiconductors but is large in
metals.
4. It is applied in the
33. When a plane wave propagating
measurement of the magnetic
through free space, the direction of
field intensity.
the field
1. ‘E’ is perpendicular to the Codes :
direction of propagation. (A) 1, 2 & 3 only
2. ‘H’ is perpendicular to the (B) 2 & 4 only
direction of propagation.
(C) 1, 3 & 4 only
3. ‘E’ is perpendicular to the
direction of the field ‘H’. (D) 1, 2 & 4 only
Codes :
(A) 1 & 2 (B) 2 & 3 36. Consider the following statements :
(C) 1 & 3 (D) 1, 2 & 3 1. Race around condition occurs
in a JK flip-flop when both the
34. Consider the following statements inputs are one.
regarding a semiconductor : 2. A flip-flop is used to store one
1. Acceptor level lies close to the bit of information.
valence band. 3. A transparent latch consists in
2. Donor level close to the D-type in flip-flop.
valence band. 4. Master-Slave configuration is
3. n-type semiconductor behaves used in flip-flop to store two
as a conductor at zero Kelvin. bits of information.
4. p-type semiconductor behaves Which of these statements are correct ?
as a insulator at zero Kelvin.
Codes :
Codes :
(A) 2 & 3 are correct. (A) 1, 2 & 3 only
(B) 1 & 3 are correct. (B) 1, 3 & 4 only
(C) 1 & 4 are correct. (C) 1, 2 & 4 only
(D) 3 & 4 are correct. (D) 2, 3 & 4 only
J-88-13 5 Paper-III
37. Consider the following : 40. A digital multiplexer can be used for
1. Oscillator which of the following ?
2. Emitter follower 1. Parallel-to-serial conversion
3. Cascaded amplifier 2. Many-to-one switch
4. Power amplifier 3. To generate memory chip select
Which of these use feedback 4. For code conversion
amplifiers ? Select the correct answer using the
code given below :
(A) 1 & 2 (B) 1 & 3
Codes :
(C) 2 & 4 (D) 3 & 4
(A) 1, 3 & 4 (B) 2, 3 & 4
(C) 1 & 2 (D) 2 & 3
38. Consider the following statements,
regarding an Op-Amp : Assertion – Reason type questions (Q. 41
1. All types of negative feedback to 50 ) :
reduce nonlinear distortion. The following items consist of two
2. All types of negative feedback statements, one labelled the ‘Assertion (A)’
reduce the output offset and the other labelled the ‘Reason (R)’.
voltage. You are to examine these two statements
3. Non-inverting (current and and decide if the Assertion (A) and the
voltage) feedback increases the Reason (R) are individually true and if so,
input impedance. whether the Reason is a correct explanation
4. Inverting (current and voltage) of the Assertion. Select your answers to
feedback decreases input these items using the codes given below
impedance. and mark your answer sheet accordingly.
Codes : Codes :
(A) 1 only (A) Both (A) and (R) are true and
(R) is the correct explanation
(B) 2 & 3 only
of (A).
(C) 2 & 4 only (B) Both (A) and (R) are true, but
(D) 1, 2, 3 & 4 only (R) is not the correct
explanation of (A).
39. If an electric field is applied to an (C) (A) is true and (R) is false.
n-type semiconductor bar, the (D) (A) is false and (R) is true.
electrons and holes move in opposite
directions due to their opposite 41. Assertion (A) : In Intel 8085, the
charges. The net current is lower byte of address and data
1. due to both electrons and holes are multiplexed.
with electrons as majority Reason (R) : This helps not to limit
carriers. the number of external pin
2. the sum of electron and hole terminals.
currents.
42. Assertion (A) : In an Op-Amp
3. the difference between electron
circuit when one input terminal
and hole currents.
of the Op-Amp is grounded,
Which of these statements is/are the other terminal becomes a
correct ? virtual ground.
(A) 1 & 3 (B) 1 & 2 Reason (R) : Input impedance of the
(C) 2 & 3 (D) 3 alone Op-Amp is high.
Paper-III 6 J-88-13
43. Assertion (A) : The intrinsic Fermi 48. Assertion (A) : The part of root
level of a semiconductor lies locus on the real axis is not
exactly at the middle of the dependent upon the poles and
energy gap. zeros which are not on the real
Reason (R) : The densities of the axis.
available state in valence and Reason (R) : Poles and zeros which
conduction bands of a are not on the real axis always
semiconductor are equal. occur in conjugate pairs.
44. Assertion (A) : The top down 49. Assertion (A) : A programmable
structured programming should Read-Only-Memory can be
be used for developing used as a synchronous counter.
programs. Reason (R) : Each memory location
Reason (R) : The top down of a programmable Read-Only-
structured programming Memory is programmed and
methodology enables us to get can be read synchronously.
readable and easily provable
programs. 50. Assertion (A) : A half-adder is faster
than full-adder.
Reason (R) : A half-adder gives only
45. Assertion (A) : A processor can one output while a full adder
reference a memory stack gives two outputs.
without specifying an address.
Reason (R) : The address is always 51. Consider the following circuit
available and automatically configurations :
updated in the stack pointer. 1. Common emitter
2. Common base
46. Assertion (A) : In optical fibre 3. Emitter follower
communication, light rays are 4. Emitter follower using
guided by the total internal Darlington pairs
reflection at the interface The correct sequence in increasing
between fibre core and order of the input resistances of these
cladding. configuration is
Reason (R) : The Refractive Index (A) 2, 1, 4, 3 (B) 1, 2, 4, 3
of core is large than the (C) 2, 1, 3, 4 (D) 1, 2, 3, 4
Refractive Index of cladding.
52. Consider the Analog and Digital
47. Assertion (A) : Tunnel diode converters given below :
represents negative resistance 1. Successive Approximation ADC
characteristics and when 2. Dual Ramp ADC
operated in this region may be 3. Counter Method ADC
used as an oscillator. 4. Simultaneous ADC
Reason (R) : Tunnel diode is heavily The correct sequence of the
doped p-n junction having an ascending order in terms of
extremely narrow junction conversion times of these ADC’s is
which electrons are able to (A) 3, 2, 4, 1 (B) 2, 3, 4, 1
tunnel through it. (C) 2, 3, 1, 4 (D) 3, 2, 1, 4
J-88-13 7 Paper-III
53. Arrange the following in order of 57. Consider the following logic families :
decreasing frequency : 1. MOS 2. TTL
1. C band 2. X band 3. RTL 4. ECL
3. Ku band 4. K band The sequence of these logic families
Codes : in the order of their increasing
propagation delay is
(A) 1, 2, 3, 4 (B) 2, 3, 4, 1
(A) 1, 2, 3, 4 (B) 4, 2, 3, 1
(C) 1, 4, 3, 2 (D) 4, 3, 2, 1
(C) 2, 1, 3, 4 (D) 4, 3, 2, 1
54. Consider the following cables : 58. Consider the following steps :
1. Single mode optical fibre cable 1. Etching
2. Multimode optical fibre cable 2. Exposure to UV radiation
3. Graded-index optical fibre cable 3. Stripping
4. Co-axial cable 4. Developing
The correct sequence in increasing After a wafer has been coated with
order of data rate is photo-resist, the correct sequence of
these steps in photolithography is
(A) 1, 2, 3, 4 (B) 4, 2, 3, 1
(A) 1, 4, 2, 3 (B) 2, 4, 1, 3
(C) 1, 2, 4, 3 (D) 4, 3, 2, 1
(C) 2, 1, 3, 4 (D) 1, 3, 2, 4
55. The interrupts in 8085 processor are 59. The following microprocessor
1. RST 7.5 2. RST 6.5 operations are part of interrupt cycle
of a control unit :
3. RST 5.5 4. TRAP
1. MAR ← Save-address
Keep the sequence from least priority
to highest priority 2. PC ← Routine-address
(A) 1, 2, 3, 4 (B) 4, 3, 2, 1 3. MBR ← (PC)
(C) 3, 2, 1, 4 (D) 1, 4, 3, 2 4. Memory ← MBR
Which of the following is the correct
order of their occurrence ?
56. Consider the following frequency
(A) 1, 2, 3 (B) 3, 4, 2
spectrum of the electro-magnetic
wave : (C) 2, 3, 4 (D) 4, 3, 1
1. FM radio waves
60. Consider the following logic families :
2. Microwaves
1. RTL 2. DTL
3. Visible range
3. TTL 4. ECL
4. X-ray
The sequence of these logic families
Write down the frequency spectrum in the order of their decreasing
in ascending order Fan-Out is
(A) 4, 3, 2, 1 (B) 1, 3, 2, 4 (A) 1, 2, 3, 4 (B) 2, 1, 3, 4
(C) 3, 2, 4, 1 (D) 1, 2, 3, 4 (C) 4, 3, 2, 1 (D) 3, 4, 2, 1
Paper-III 8 J-88-13
61. List – I List – II 64. List – I List – II
a. BJT i. Pinch off effect a. Gunn diode i. Junction less
b. FET ii. Controlled device
rectification b. Solar cell ii. Single junction
c. SCR iii. Negative device
Resistance c. MOSFET iii. Triple junction
Characteristics device
d. Tunnel iv. Punch through
d. SCR iv. Double
diode effect
junction device
Codes :
a b c d Codes :
(A) i iii ii iv a b c d
(B) i ii iii iv (A) i iii ii iv
(C) iv i ii iii (B) i ii iv iii
(D) i iv iii ii (C) ii iv iii i
(D) i iii iv ii
62. List – I List – II
a. Frequency i. Envelope 65. List – I List – II
modulation detection a. Capacitive i. Pressure
b. Double ii. Companding transducer
sideband b. Thermocouple ii. Torque
suppressed c. Load cell iii. Displacement
signal carrier d. Diaphragm iv. Temperature
c. PCM iii. Balance Codes :
modulator a b c d
d. Amplitude iv. Pre-emphasis
(A) ii iv iii i
modulation and de-
emphasis (B) iii i ii iv
Codes : (C) ii i iii iv
a b c d (D) iii iv ii i
(A) i ii iii iv 66. List – I List – II
(B) ii iii i iv a. Ampere’s i. Force on a
(C) iii i ii iv law charge
(D) iv iii ii i b. Biot’s law ii. Force due to a
current
63. List – I List – II
carrying
a. Astable i. Two-stable
multivibrator states conductor
b. Bistable ii. Free running c. Coulomb’s iii. Electric flux
multivibrator oscillator law density at a
c. Monostable iii. One-stable point
multivibrator state d. Gauss’s law iv. Magnetic flux
d. Schmitt iv. Square wave density at a
trigger generator point
Codes : Codes :
a b c d a b c d
(A) i iii iv ii (A) iii ii i iv
(B) iii iv i ii (B) iv ii i iii
(C) ii i iii iv (C) iv i ii iii
(D) ii i iv iii (D) iii i ii iv
J-88-13 9 Paper-III
67. List – I List – II 69. List – I List – II
a. Immediate i. LDA 30 FF
addressing a. Drift current i. Law of
Conservation
b. Implied ii. MOV A, B
addressing of Charge
c. Register iii. LXI H, 2050 b. Einstein’s ii. Electric field
addressing equation
d. Direct iv. RRC
c. Diffusion iii. Thermal
addressing
current voltage
Codes :
a b c d d. Continuity iv. Concentration
(A) iii iv ii i equation gradient
J-88-13 11 Paper-III
Space For Rough Work
Paper-III 12 J-88-13