STM32G030x6/x8

Arm® Cortex®-M0+ 32-bit MCU, up to 64 KB Flash, 8 KB RAM,

2x USART, timers, ADC, comm. I/Fs, 2.0-3.6 V
Datasheet - production data

Features
• Includes ST state-of-the-art patented
technology
• Core: Arm® 32-bit Cortex®-M0+ CPU, SO8N TSSOP20 LQFP32
frequency up to 64 MHz (4.9 × 6 mm) (6.4 × 4.4 mm) (7 × 7 mm)
• -40°C to 85°C operating temperature LQFP48
(7 × 7 mm)
• Memories
– Up to 64 Kbytes of flash memory with
protection • Communication interfaces
– 8 Kbytes of SRAM with HW parity check – Two I2C-bus interfaces supporting Fast-
• CRC calculation unit mode Plus (1 Mbit/s) with extra current
• Reset and power management sink, one supporting SMBus/PMBus and
– Voltage range: 2.0 V to 3.6 V wakeup from Stop mode
– Two USARTs with master/slave
– Power-on/Power-down reset (POR/PDR) synchronous SPI; one supporting ISO7816
– Low-power modes: interface, LIN, IrDA capability, auto baud
Sleep, Stop, Standby rate detection and wakeup feature
– VBAT supply for RTC and backup registers – Two SPIs (32 Mbit/s) with 4- to 16-bit
• Clock management programmable bitframe, one multiplexed
– 4 to 48 MHz crystal oscillator with I2S interface; two extra SPIs through
– 32 kHz crystal oscillator with calibration USARTs
– Internal 16 MHz RC with PLL option • Development support: serial wire debug (SWD)
– Internal 32 kHz RC oscillator (±5 %) • All packages ECOPACK 2 compliant
• Up to 44 fast I/Os
– All mappable on external interrupt vectors Table 1. Device summary
– Multiple 5 V-tolerant I/Os
• 5-channel DMA controller with flexible mapping Reference Part number
• 12-bit, 0.4 µs ADC (up to 16 ext. channels) STM32G030C6, STM32G030F6,
– Up to 16-bit with hardware oversampling STM32G030x6
STM32G030J6, STM32G030K6
– Conversion range: 0 to 3.6V
STM32G030x8 STM32G030C8, STM32G030K8
• 8 timers: 16-bit for advanced motor control,
four 16-bit general-purpose, two watchdogs,
SysTick timer
• Calendar RTC with alarm and periodic wakeup
from Stop/Standby

June 2025 DS12991 Rev 6 1/100

This is information on a product in full production. www.st.com
Contents STM32G030x6/x8

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.1 Arm® Cortex®-M0+ core with MPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.2 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.3 Embedded flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.4 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.5 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.6 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 14
3.7 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.7.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.7.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.7.5 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.6 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.8 Interconnect of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.9 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.10 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.11 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.12 DMA request multiplexer (DMAMUX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.13 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.13.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 21
3.13.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 21
3.14 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.14.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.14.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.14.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.15 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.15.1 Advanced-control timer (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.15.2 General-purpose timers (TIM3, 14, 16, 17) . . . . . . . . . . . . . . . . . . . . . . 24

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STM32G030x6/x8 Contents

3.15.3 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.15.4 System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.15.5 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.16 Real-time clock (RTC), tamper (TAMP) and backup registers . . . . . . . . . 25
3.17 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.18 Universal synchronous/asynchronous receiver transmitter (USART) . . . 27
3.19 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.20 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.20.1 Serial wire debug port (SW-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

4 Pinouts, pin description and alternate functions . . . . . . . . . . . . . . . . . 29

5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
5.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 42
5.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 42
5.3.4 Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
5.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
5.3.6 Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
5.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
5.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
5.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
5.3.10 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
5.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
5.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
5.3.13 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

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Contents STM32G030x6/x8

5.3.14 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

5.3.15 NRST input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
5.3.16 Extended interrupt and event controller input (EXTI) characteristics . . . 67
5.3.17 Analog switch booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
5.3.18 Analog-to-digital converter characteristics . . . . . . . . . . . . . . . . . . . . . . . 68
5.3.19 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5.3.20 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5.3.21 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5.3.22 Characteristics of communication interfaces . . . . . . . . . . . . . . . . . . . . . 74

6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
6.1 Device marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
6.2 SO8N package information (O7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
6.3 TSSOP20 package information (YA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
6.4 LQFP32 package information (5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
6.5 LQFP48 package information (5B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.6 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
6.6.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

8 Important security notice . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98

4/100 DS12991 Rev 6

STM32G030x6/x8 List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. STM32G030x6/x8 family device features and peripheral counts . . . . . . . . . . . . . . . . . . . . 10
Table 3. Access status versus readout protection level and execution modes. . . . . . . . . . . . . . . . . 13
Table 4. Interconnect of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 5. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 6. Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 7. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 8. I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 9. USART implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 10. SPI/I2S implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 11. Terms and symbols used in Pin assignment and description table . . . . . . . . . . . . . . . . . . 30
Table 12. Pin assignment and description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 13. Port A alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 14. Port B alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 15. Port C alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 16. Port D alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 17. Port F alternate function mapping. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 18. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 19. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 20. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 21. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 22. Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 23. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 24. Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 25. Current consumption in Run and Low-power run modes
at different die temperatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 26. Current consumption in Sleep and Low-power sleep modes . . . . . . . . . . . . . . . . . . . . . . . 45
Table 27. Current consumption in Stop 0 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 28. Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 29. Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 30. Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 31. Current consumption of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 32. Low-power mode wakeup times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 33. Regulator mode transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 34. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 35. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 36. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 37. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 38. HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 39. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 40. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 41. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 42. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 43. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 44. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 45. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 46. Electrical sensitivity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 47. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

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List of tables STM32G030x6/x8

Table 48. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 49. Input characteristics of FT_e I/Os . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 50. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 51. Non-FT_c I/O output timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 52. FT_c I/O output timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 53. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 54. EXTI input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 55. Analog switch booster characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 56. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 57. Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 58. ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 59. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 60. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 61. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 62. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 63. IWDG min/max timeout period at 32 kHz LSI clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 64. Minimum I2CCLK frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 65. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 66. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 67. I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 68. USART characteristics in SPI mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 69. SO8N -Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 70. TSSOP20 – Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table 71. LQFP32 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 72. LQFP48 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 73. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 74. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98

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List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 2. Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 3. STM32G030Jx SO8N pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 4. STM32G030Fx TSSOP20 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 5. STM32G030KxT LQFP32 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 6. STM32G030CxT LQFP48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 7. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 8. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 9. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 10. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 11. VREFINT vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 12. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 13. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 14. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 15. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 16. I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 17. Current injection into FT_e input with diode active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 18. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 19. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Figure 20. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Figure 21. ADC typical connection diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Figure 22. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Figure 23. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Figure 24. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Figure 25. I2S slave timing diagram (Philips protocol) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Figure 26. I2S master timing diagram (Philips protocol). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 27. USART timing diagram in SPI master mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Figure 28. USART timing diagram in SPI slave mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Figure 29. SO8N -Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Figure 30. SO8N - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 31. TSSOP20 – Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Figure 32. TSSOP20 – Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Figure 33. LQFP32 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 34. LQFP32 – Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Figure 35. LQFP48 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 36. LQFP48 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94

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Introduction STM32G030x6/x8

1 Introduction

This document provides information on STM32G030x6/x8 microcontrollers, such as

description, functional overview, pin assignment and definition, electrical characteristics,
packaging, and ordering codes.
Information on memory mapping and control registers is object of reference manual
RM0454.
For information on the device errata with respect to the datasheet and reference manual,
refer to the STM32G030x6/x8 errata sheet ES0486.
Information on Arm®(a) Cortex®-M0+ core is available from the www.arm.com website.

a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

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STM32G030x6/x8 Description

2 Description

The STM32G030x6/x8 mainstream microcontrollers are based on high-performance

Arm® Cortex®-M0+ 32-bit RISC core operating at up to 64 MHz frequency. Offering a high
level of integration, they are suitable for a wide range of applications in consumer, industrial
and appliance domains and ready for the Internet of Things (IoT) solutions.
The devices incorporate a memory protection unit (MPU), high-speed embedded memories
(8 Kbytes of SRAM and up to 64 Kbytes of flash program memory with read protection, write
protection), DMA, an extensive range of system functions, enhanced I/Os, and peripherals.
The devices offer standard communication interfaces (two I2Cs, two SPIs / one I2S, and two
USARTs), one 12-bit ADC (2.5 MSps) with up to 19 channels, a low-power RTC, an
advanced control PWM timer, four general-purpose 16-bit timers, two watchdog timers, and
a SysTick timer.
The devices operate within ambient temperatures from -40 to 85°C and with supply voltages
from 2.0 V to 3.6 V. Optimized dynamic consumption combined with a comprehensive set of
power-saving modes allows the design of low-power applications.
VBAT direct battery input allows keeping RTC and backup registers powered.
The devices come in packages with 8 to 48 pins.

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Description STM32G030x6/x8

Table 2. STM32G030x6/x8 family device features and peripheral counts

STM32G030_
Peripheral
_J6 _F6 _K6 _K8 _C6 _C8

Flash memory (Kbyte) 32 32 32 64 32 64

SRAM (Kbyte) 8 with parity
Advanced control 1 (16-bit)
Timers

General-purpose 4 (16-bit)
SysTick 1
Watchdog 2
SPI [I2S](1) 0[0](2) 2 [1](2)
interfaces
Comm.

I2C 2
USART 2
RTC Yes
Tamper pins 0 2
RNG / AES No / No
GPIOs 5 17 29 43
Wakeup pins 1 4
12-bit ADC channels
5+2 14 + 2 16 + 2 16 + 3
(external + internal)
VREFBUF No
Max. CPU frequency 64 MHz
Operating voltage 2.0 to 3.6 V
Ambient: -40 to 85 °C
Operating temperature(3)
Junction: -40 to 105 °C
Number of pins 8 20 32 48
1. The numbers in brackets denote the count of SPI interfaces configurable as I2S interface.
2. Plus two extra SPIs through USARTs.
3. Depends on order code. Refer to Section 7: Ordering information for details.

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Figure 1. Block diagram

POWER
SWCLK DMAMUX
SWD Voltage
SWDIO VCORE regulator
DMA
VDDIO1
CPU VDDA VDD/VDDA
CORTEX-M0+ Flash memory VSS/VSSA

Bus matrix
I/F VDD
fmax = 64 MHz up to 64 KB SUPPLY
SUPERVISION
POR
SRAM Reset POR
NVIC IOPORT 8 KB Parity NRST
Int
T sensor
HSI16
RC 16 MHz
PLLPCLK
PLLRCLK PLL
GPIOs
PAx Port A LSI XTAL OSC
RC 32 kHz OSC_IN
4-48 MHz OSC_OUT
PBx Port B
HSE
decoder

IWDG
PCx Port C CRC
I/F VDD
RCC LSE VBAT
PDx Port D Reset & clock control Low-voltage
detector
PFx Port F LSE
AHB

XTAL32 kHz OSC32_IN

System and OSC32_OUT
peripheral
clocks RTC, TAMP RTC_OUT
EXTI Backup regs RTC_REFIN
RTC_TS
from peripherals I/F
AHB-to-APB TAMP_IN

4 channels
TIM1
BK, BK2, ETR
VREF+ 4 channels
TIM3
ETR
APB

SYSCFG TIM14 1 channel

16x IN ADC I/F

TIM16 & 17 1 channel

TIMER 16/17 BK
MOSI/SD
APB

MISO/MCK PWRCTRL RX, TX

SPI1/I2S USART1 CTS, RTS, CK
SCK/CK
NSS/WS
USART2 RX, TX
WWDG CTS, RTS, CK
MOSI, MISO
SPI2
SCK, NSS I2C1 SCL, SDA, SMBA
DBGMCU

I2C2 SCL, SDA

Power domain of analog blocks : VBAT VDD VDDA VDDIO1

MSv47958V2

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Functional overview STM32G030x6/x8

3 Functional overview

3.1 Arm® Cortex®-M0+ core with MPU

The Cortex-M0+ is an entry-level 32-bit Arm Cortex processor designed for a broad range of
embedded applications. It offers significant benefits to developers, including:
• a simple architecture, easy to learn and program
• ultra-low power, energy-efficient operation
• excellent code density
• deterministic, high-performance interrupt handling
• upward compatibility with Cortex-M processor family
• platform security robustness, with integrated Memory Protection Unit (MPU).
The Cortex-M0+ processor is built on a highly area- and power-optimized 32-bit core, with a
2-stage pipeline Von Neumann architecture. The processor delivers exceptional energy
efficiency through a small but powerful instruction set and extensively optimized design,
providing high-end processing hardware including a single-cycle multiplier.
The Cortex-M0+ processor provides the exceptional performance expected of a modern
32-bit architecture, with a higher code density than other 8-bit and 16-bit microcontrollers.
Owing to embedded Arm core, the STM32G030x6/x8 devices are compatible with Arm tools
and software.
The Cortex-M0+ is tightly coupled with a nested vectored interrupt controller (NVIC)
described in Section 3.13.1.

3.2 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

3.3 Embedded flash memory

STM32G030x6/x8 devices feature up to 64 Kbytes of embedded flash memory available for
storing code and data.

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Flexible protections can be configured thanks to option bytes:

• Readout protection (RDP) to protect the whole memory. Three levels are available:
– Level 0: no readout protection
– Level 1: memory readout protection: the flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
– Level 2: chip readout protection: debug features (Cortex-M0+ serial wire), boot in
RAM and bootloader selection are disabled. This selection is irreversible.

Table 3. Access status versus readout protection level and execution modes

User execution Debug, boot from RAM or boot

Protection from system memory (loader)
Area
level
Read Write Erase Read Write Erase

User 1 Yes Yes Yes No No No

memory 2 Yes Yes Yes N/A N/A N/A
System 1 Yes No No Yes No No
memory 2 Yes No No N/A N/A N/A
Option 1 Yes Yes Yes Yes Yes Yes
bytes 2 Yes No No N/A N/A N/A
(1) N/A(1)
Backup 1 Yes Yes N/A No No
registers 2 Yes Yes N/A N/A N/A N/A
1 Yes Yes N/A Yes No N/A
OTP
2 Yes Yes N/A N/A N/A N/A
1. Erased upon RDP change from Level 1 to Level 0.

• Write protection (WRP): the protected area is protected against erasing and
programming. Two areas per bank can be selected, with 2-Kbyte granularity.
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
• single error detection and correction
• double error detection
• readout of the ECC fail address from the ECC register

3.4 Embedded SRAM

STM32G030x6/x8 devices have 8 Kbytes of embedded SRAM with parity. Hardware parity
check allows memory data errors to be detected, which contributes to increasing functional
safety of applications.
The memory can be read/write-accessed at CPU clock speed, with 0 wait states.

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Functional overview STM32G030x6/x8

3.5 Boot modes

At startup, the boot pin and boot selector option bit are used to select one of the three boot
options:
• boot from User flash memory
• boot from System memory
• boot from embedded SRAM
The boot pin is shared with a standard GPIO and can be enabled through the boot selector
option bit. If the BOOT0 pin selects the boot from the main flash memory of which the first
location is empty, the flash memory empty checker forces the boot from the system memory.
The system memory contains an embedded boot loader. It manages the flash memory
reprogramming through one of the following interfaces:
• USART on pins PA9/PA10 or PA2/PA3
• I2C-bus on pins PB6/PB7 or PB10/PB11
When boot loader is executed, it configures some of the GPIOs out of their by-default high-Z
state. Refer to AN2606 for more details on the boot loader and on the GPIO configuration
when booting from the system memory.

3.6 Cyclic redundancy check calculation unit (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at link
time and stored at a given memory location.

3.7 Power supply management

3.7.1 Power supply schemes

The STM32G030x6/x8 devices require a 2.0 V to 3.6 V operating supply voltage (VDD).
Several different power supplies are provided to specific peripherals:
• VDD = 2.0 to 3.6 V
VDD is the external power supply for the internal regulator and the system analog such
as reset, power management and internal clocks. It is provided externally through
VDD/VDDA pin.
• VDDA = 2.0 V to 3.6 V
VDDA is the analog power supply for the A/D converter. VDDA voltage level is identical to
VDD voltage as it is provided externally through VDD/VDDA pin.
• VDDIO1 = VDD
VDDIO1 is the power supply for the I/Os. VDDIO1 voltage level is identical to VDD voltage
as it is provided externally through VDD/VDDA pin.

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STM32G030x6/x8 Functional overview

• VBAT = 1.55 V to 3.6 V. VBAT is the power supply (through a power switch) for RTC,
TAMP, low-speed external 32.768 kHz oscillator and backup registers when VDD is not
present. VBAT is provided externally through VBAT pin. When this pin is not available
on the package, VBAT bonding pad is internally bonded to the VDD/VDDA pin.
• VREF+ is the analog peripheral input reference voltage. When VDDA < 2 V, VREF+ must
be equal to VDDA. When VDDA ≥ 2 V, VREF+ must be between 2 V and VDDA. It can be
grounded when the analog peripherals using VREF+ are not active.
VREF+ is delivered through VREF+ pin. On packages without VREF+ pin, VREF+ is
internally connected with VDD.
• VCORE is an internal supply for digital peripherals, SRAM and flash memory. It is
produced by an embedded linear voltage regulator. On top of VCORE, the flash memory
is also powered from VDD.

Figure 2. Power supply overview

VDDA domain
VREF+
VREF+
VDDA A/D converter
VSSA

VDDIO1 domain
VDDIO1
I/O ring

VDD domain

Reset block
Temp. sensor VCORE domain
PLL, HSI
Core
VSS Standby circuitry
VSS/VSSA (Wakeup, IWDG) SRAM
VDD VCORE Digital
VDD/VDDA Voltage
regulator peripherals

Low-voltage Flash memory

detector

RTC domain
BKP registers
VBAT
LSE crystal 32.768 kHz osc
RCC BDCR register
RTC and TAMP

MSv47920V1

3.7.2 Power supply supervisor

The device has an integrated power-on/power-down (POR/PDR) reset active in all power
modes and ensuring proper operation upon power-on and power-down. It maintains the
device in reset when the supply voltage is below VPOR/PDR threshold, without the need for
an external reset circuit.

3.7.3 Voltage regulator

Two embedded linear voltage regulators, main regulator (MR) and low-power regulator
(LPR), supply most of digital circuitry in the device.

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Functional overview STM32G030x6/x8

The MR is used in Run and Sleep modes. The LPR is used in Low-power run, Low-power
sleep and Stop modes.
In Standby mode, both regulators are powered down and their outputs set in high-
impedance state, such as to bring their current consumption close to zero.

3.7.4 Low-power modes

By default, the microcontroller is in Run mode after system or power reset. It is up to the
user to select one of the low-power modes described below.

Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can wake
up the CPU when an interrupt/event occurs.

Low-power run mode

This mode is achieved with VCORE supplied by the low-power regulator to minimize the
regulator's operating current. The code can be executed from SRAM or from flash memory,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can be
clocked by HSI16.

Low-power sleep mode

This mode is entered from the low-power run mode. Only the CPU clock is stopped. When
wakeup is triggered by an event or an interrupt, the system reverts to the Low-power run
mode.

Stop 0 and Stop 1 modes

In Stop 0 and Stop 1 modes, the device achieves the lowest power consumption while
retaining the SRAM and register contents. All clocks in the VCORE domain are stopped. The
PLL, as well as the HSI16 RC oscillator and the HSE crystal oscillator are disabled. The
LSE or LSI keep running. The RTC can remain active (Stop mode with RTC, Stop mode
without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode, so as
to get clock for processing the wakeup event. The main regulator remains active in Stop 0
mode while it is turned off in Stop 1 mode.

Standby mode
The Standby mode is used to achieve the lowest power consumption, with POR/PDR
always active in this mode. The main regulator is switched off to power down VCORE
domain. The low-power regulator is switched off. The PLL, as well as the HSI16 RC
oscillator and the HSE crystal oscillator are also powered down. The RTC can remain active
(Standby mode with RTC, Standby mode without RTC).
For each I/O, the software can determine whether a pull-up, a pull-down or no resistor shall
be applied to that I/O during Standby mode.
Upon entering Standby mode, register contents are lost except for registers in the RTC
domain and standby circuitry.

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The device exits Standby mode upon external reset event (NRST pin), IWDG reset event,
wakeup event (WKUP pin, configurable rising or falling edge), RTC event (alarm, periodic
wakeup, timestamp), TAMP event, or when a failure is detected on LSE (CSS on LSE).

3.7.5 Reset mode

During and upon exiting reset, the schmitt triggers of I/Os are disabled so as to reduce
power consumption. In addition, when the reset source is internal, the built-in pull-up
resistor on NRST pin is deactivated.

3.7.6 VBAT operation

The VBAT power domain, consuming very little energy, includes RTC, and LSE oscillator and
backup registers.
In VBAT mode, the RTC domain is supplied from VBAT pin. The power source can be, for
example, an external battery or an external supercapacitor. Two anti-tamper detection pins
are available.
The RTC domain can also be supplied from VDD.
By means of a built-in switch, an internal voltage supervisor allows automatic switching of
RTC domain powering between VDD and voltage from VBAT pin to ensure that the supply
voltage of the RTC domain (VBAT) remains within valid operating conditions. If both voltages
are valid, the RTC domain is supplied from VDD.
An internal circuit for charging the battery on VBAT pin can be activated if the VDD voltage is
within a valid range.
Note: External interrupts and RTC alarm/events cannot cause the microcontroller to exit the VBAT
mode, as in that mode the VDD is not within a valid range.

3.8 Interconnect of peripherals

Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep and Stop
modes.

Table 4. Interconnect of peripherals

Low-power sleep
Low-power run

Sleep

Interconnect
Stop
Run

Interconnect source Interconnect action

destination

TIMx Timer synchronization or chaining Y Y -

ADCx Conversion triggers Y Y -
TIMx
DMA Memory-to-memory transfer trigger Y Y -
ADCx TIM1 Timer triggered by analog watchdog Y Y -

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Functional overview STM32G030x6/x8

Table 4. Interconnect of peripherals (continued)

Low-power sleep
Low-power run

Sleep
Interconnect

Stop
Run
Interconnect source Interconnect action
destination

RTC TIM16 Timer input channel from RTC events Y Y -

All clock sources (internal and Clock source used as input channel for
TIM14,16,17 Y Y -
external) RC measurement and trimming
CSS
RAM (parity error) TIM1,16,17 Timer break Y Y -
Flash memory (ECC error)
CPU (hard fault) TIM1,16,17 Timer break Y - -
TIMx External trigger Y Y -
GPIO
ADC Conversion external trigger Y Y -

3.9 Clocks and startup

The clock controller distributes the clocks coming from different oscillators to the core and
the peripherals. It also manages clock gating for low-power modes and ensures clock
robustness. It features:
• Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
• Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
• Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
• System clock source: three different sources can deliver SYSCLK system clock:
– 4-48 MHz high-speed oscillator with external crystal or ceramic resonator (HSE). It
can supply clock to system PLL. The HSE can also be configured in bypass mode
for an external clock.
– 16 MHz high-speed internal RC oscillator (HSI16), trimmable by software. It can
supply clock to system PLL.
– System PLL with maximum output frequency of 64 MHz. It can be fed with HSE or
HSI16 clocks.

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• Auxiliary clock source: two ultra-low-power clock sources for the real-time clock
(RTC):
– 32.768 kHz low-speed oscillator with external crystal (LSE), supporting four drive
capability modes. The LSE can also be configured in bypass mode for using an
external clock.
– 32 kHz low-speed internal RC oscillator (LSI) with ±5% accuracy, also used to
clock an independent watchdog.
• Peripheral clock sources: several peripherals ( I2S, USARTs, I2Cs, ADC) have their
own clock independent of the system clock.
• Clock security system (CSS): in the event of HSE clock failure, the system clock is
automatically switched to HSI16 and, if enabled, a software interrupt is generated. LSE
clock failure can also be detected and generate an interrupt. The CCS feature can be
enabled by software.
• Clock output:
– MCO (microcontroller clock output) provides one of the internal clocks for
external use by the application
– LSCO (low speed clock output) provides LSI or LSE in all low-power modes
(except in VBAT operation).
Several prescalers allow the application to configure AHB and APB domain clock
frequencies, 64 MHz at maximum.

3.10 General-purpose inputs/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function (AF). Most of
the GPIO pins are shared with special digital or analog functions.
Through a specific sequence, this special function configuration of I/Os can be locked, such
as to avoid spurious writing to I/O control registers.

3.11 Direct memory access controller (DMA)

The direct memory access (DMA) controller is a bus master and system peripheral with
single-AHB architecture.
With 5 channels, it performs data transfers between memory-mapped peripherals and/or
memories, to offload the CPU.
Each channel is dedicated to managing memory access requests from one or more
peripherals. The unit includes an arbiter for handling the priority between DMA requests.

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Functional overview STM32G030x6/x8

Main features of the DMA controller:

• Single-AHB master
• Peripheral-to-memory, memory-to-peripheral, memory-to-memory and peripheral-to-
peripheral data transfers
• Access, as source and destination, to on-chip memory-mapped devices such as flash
memory, SRAM, and AHB and APB peripherals
• All DMA channels independently configurable:
– Each channel is associated either with a DMA request signal coming from a
peripheral, or with a software trigger in memory-to-memory transfers. This
configuration is done by software.
– Priority between the requests is programmable by software (four levels per
channel: very high, high, medium, low) and by hardware in case of equality (such
as request to channel 1 has priority over request to channel 2).
– Transfer size of source and destination are independent (byte, half-word, word),
emulating packing and unpacking. Source and destination addresses must be
aligned on the data size.
– Support of transfers from/to peripherals to/from memory with circular buffer
management
– Programmable number of data to be transferred: 0 to 216 - 1
• Generation of an interrupt request per channel. Each interrupt request originates from
any of the three DMA events: transfer complete, half transfer, or transfer error.

3.12 DMA request multiplexer (DMAMUX)

The DMAMUX request multiplexer enables routing a DMA request line between the
peripherals and the DMA controller. Each channel selects a unique DMA request line,
unconditionally or synchronously with events from its DMAMUX synchronization inputs.
DMAMUX may also be used as a DMA request generator from programmable events on its
input trigger signals.

3.13 Interrupts and events

The device flexibly manages events causing interrupts of linear program execution, called
exceptions. The Cortex-M0+ processor core, a nested vectored interrupt controller (NVIC)
and an extended interrupt/event controller (EXTI) are the assets contributing to handling the
exceptions. Exceptions include core-internal events such as, for example, a division by zero
and, core-external events such as logical level changes on physical lines. Exceptions result
in interrupting the program flow, executing an interrupt service routine (ISR) then resuming
the original program flow.
The processor context (contents of program pointer and status registers) is stacked upon
program interrupt and unstacked upon program resume, by hardware. This avoids context
stacking and unstacking in the interrupt service routines (ISRs) by software, thus saving
time, code and power. The ability to abandon and restart load-multiple and store-multiple
operations significantly increases the device’s responsiveness in processing exceptions.

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3.13.1 Nested vectored interrupt controller (NVIC)

The configurable nested vectored interrupt controller is tightly coupled with the core. It
handles physical line events associated with a non-maskable interrupt (NMI) and maskable
interrupts, and Cortex-M0+ exceptions. It provides flexible priority management.
The tight coupling of the processor core with NVIC significantly reduces the latency between
interrupt events and start of corresponding interrupt service routines (ISRs). The ISR
vectors are listed in a vector table, stored in the NVIC at a base address. The vector
address of an ISR to execute is hardware-built from the vector table base address and the
ISR order number used as offset.
If a higher-priority interrupt event happens while a lower-priority interrupt event occurring
just before is waiting for being served, the later-arriving higher-priority interrupt event is
served first. Another optimization is called tail-chaining. Upon a return from a higher-priority
ISR then start of a pending lower-priority ISR, the unnecessary processor context
unstacking and stacking is skipped. This reduces latency and contributes to power
efficiency.
Features of the NVIC:
• Low-latency interrupt processing
• 4 priority levels
• Handling of a non-maskable interrupt (NMI)
• Handling of 32 maskable interrupt lines
• Handling of 10 Cortex-M0+ exceptions
• Later-arriving higher-priority interrupt processed first
• Tail-chaining
• Interrupt vector retrieval by hardware

3.13.2 Extended interrupt/event controller (EXTI)

The extended interrupt/event controller adds flexibility in handling physical line events and
allows identifying wake-up events at processor wakeup from Stop mode.
The EXTI controller has a number of channels, of which some with rising, falling or rising,
and falling edge detector capability. Any GPIO and a few peripheral signals can be
connected to these channels.
The channels can be independently masked.
The EXTI controller can capture pulses shorter than the internal clock period.
A register in the EXTI controller latches every event even in Stop mode, which allows the
software to identify the origin of the processor's wake-up from Stop mode or, to identify the
GPIO and the edge event having caused an interrupt.

3.14 Analog-to-digital converter (ADC)

A native 12-bit analog-to-digital converter is embedded into STM32G030x6/x8 devices. The
ADC has up to 16 external channels and 3 internal channels (temperature sensor, voltage
reference, VBAT monitoring). It performs conversions in single-shot or scan mode. In scan
mode, automatic conversion is performed on a selected group of analog inputs.

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The ADC frequency is independent from the CPU frequency, allowing maximum sampling
rate of ~2.5 MSps even with a low CPU speed. An auto-shutdown function guarantees that
the ADC is powered off except during the active conversion phase.
The ADC can be served by the DMA controller. It can operate in the whole VDD supply
range.
The ADC features a hardware oversampler up to 256 samples, improving the resolution to
16 bits (refer to AN2668).
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all scanned channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers (TIMx) can be internally connected to
the ADC start triggers, to allow the application to synchronize A/D conversions with timers.

3.14.1 Temperature sensor

The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to an ADC input to convert the sensor
output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor may
vary from part to part due to process variation, the uncalibrated internal temperature sensor
is suitable only for relative temperature measurements.
To improve the accuracy of the temperature sensor, each part is individually factory-
calibrated by ST. The resulting calibration data are stored in the part’s engineering bytes,
accessible in read-only mode.

Table 5. Temperature sensor calibration values

Calibration value name Description Memory address

TS ADC raw data acquired at a

TS_CAL1 temperature of 30 °C (± 5 °C), 0x1FFF 75A8 - 0x1FFF 75A9
VDDA = VREF+ = 3.0 V (± 10 mV)

3.14.2 Internal voltage reference (VREFINT)

The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for the
ADC. VREFINT is internally connected to an ADC input. The VREFINT voltage is individually
precisely measured for each part by ST during production test and stored in the part’s
engineering bytes. It is accessible in read-only mode.

Table 6. Internal voltage reference calibration values

Calibration value name Description Memory address

Raw data acquired at a

VREFINT temperature of 30 °C (± 5 °C), 0x1FFF 75AA - 0x1FFF 75AB
VDDA = VREF+ = 3.0 V (± 10 mV)

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3.14.3 VBAT battery voltage monitoring

This embedded hardware feature allows the application to measure the VBAT battery voltage
using an internal ADC input. As the VBAT voltage may be higher than VDDA and thus outside
the ADC input range, the VBAT pin is internally connected to a bridge divider by three. As a
consequence, the converted digital value is one third the VBAT voltage.

3.15 Timers and watchdogs

The device includes an advanced-control timer, four general-purpose timers, two watchdog
timers and a SysTick timer. Table 7 compares features of the advanced-control, general-
purpose and basic timers.

Table 7. Timer feature comparison

Maximum DMA Capture/ Comple-
Counter Counter Prescaler
Timer type Timer operating request compare mentary
resolution type factor
frequency generation channels outputs

Advanced- Up, down, Integer from 4

TIM1 16-bit 64 MHz Yes 3
control up/down 1 to 216 + 2 internal
Up, down, Integer from
TIM3 16-bit 64 MHz Yes 4 -
up/down 1 to 216
Integer from
TIM14 16-bit Up 64 MHz No 1 -
General- 1 to 216
purpose TIM16 Integer from
16-bit Up 64 MHz Yes 1 1
TIM17 1 to 216

3.15.1 Advanced-control timer (TIM1)

The advanced-control timer can be seen as a three-phase PWM unit multiplexed on 6
channels. It has complementary PWM outputs with programmable inserted dead-times. It
can also be seen as a complete general-purpose timer. The four independent channels can
be used for:
• input capture
• output compare
• PWM output (edge or center-aligned modes) with full modulation capability (0-100%)
• one-pulse mode output
On top of these, there are two internal channels that can be used.
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled, so as to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIMx timers (described in
Section 3.15.2) using the same architecture, so the advanced-control timers can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.

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3.15.2 General-purpose timers (TIM3, 14, 16, 17)

There are four synchronizable general-purpose timers embedded in the device (refer to
Table 7 for comparison). Each general-purpose timer can be used to generate PWM outputs
or act as a simple timebase.
• TIM3
This is a full-featured general-purpose timer with 16-bit auto-reload up/downcounter
and 16-bit prescaler.
It has four independent channels for input capture/output compare, PWM or one-pulse
mode output. It can operate in combination with other general-purpose timers via the
Timer Link feature for synchronization or event chaining. It can generate independent
DMA request and support quadrature encoders. Its counter can be frozen in debug
mode.
• TIM14
This timer is based on a 16-bit auto-reload upcounter and a 16-bit prescaler. It has one
channel for input capture/output compare, PWM output or one-pulse mode output. Its
counter can be frozen in debug mode.
• TIM16, TIM17
These are general-purpose timers featuring:
– 16-bit auto-reload upcounter and 16-bit prescaler
– 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output. The timers can operate together via the Timer Link feature for synchronization
or event chaining. They can generate independent DMA request. Their counters can
be frozen in debug mode.

3.15.3 Independent watchdog (IWDG)

The independent watchdog is based on an 8-bit prescaler and 12-bit downcounter with
user-defined refresh window. It is clocked from an independent 32 kHz internal RC (LSI).
Independent of the main clock, it can operate in Stop and Standby modes. It can be used
either as a watchdog to reset the device when a problem occurs, or as a free-running timer
for application timeout management. It is hardware- or software-configurable through the
option bytes. Its counter can be frozen in debug mode.

3.15.4 System window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked by the
system clock. It has an early-warning interrupt capability. Its counter can be frozen in debug
mode.

3.15.5 SysTick timer

This timer is dedicated to real-time operating systems, but it can also be used as a standard
down counter.

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Features of SysTick timer:

• 24-bit down counter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source

3.16 Real-time clock (RTC), tamper (TAMP) and backup registers

The device embeds an RTC and five 32-bit backup registers, located in the RTC domain of
the silicon die.
The ways of powering the RTC domain are described in Section 3.7.6.
The RTC is an independent BCD timer/counter.
Features of the RTC:
• Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format
• Automatic correction for 28, 29 (leap year), 30, and 31 days of the month
• Programmable alarm
• On-the-fly correction from 1 to 32767 RTC clock pulses, usable for synchronization with
a master clock
• Reference clock detection - a more precise second-source clock (50 or 60 Hz) can be
used to improve the calendar precision
• Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy
• Two anti-tamper detection pins with programmable filter
• Timestamp feature to save a calendar snapshot, triggered by an event on the
timestamp pin or a tamper event, or by switching to VBAT mode
• 17-bit auto-reload wakeup timer (WUT) for periodic events, with programmable
resolution and period
• Multiple clock sources and references:
– A 32.768 kHz external crystal (LSE)
– An external resonator or oscillator (LSE)
– The internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
– The high-speed external clock (HSE) divided by 32
When clocked by LSE, the RTC operates in VBAT mode and in all low-power modes. When
clocked by LSI, the RTC does not operate in VBAT mode, but it does in low-power modes.
All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt
and wake the device up from the low-power modes.
The backup registers allow keeping 20 bytes of user application data in the event of VDD
failure, if a valid backup supply voltage is provided on VBAT pin. They are not affected by
the system reset, power reset, and upon the device’s wakeup from Standby mode.

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Functional overview STM32G030x6/x8

3.17 Inter-integrated circuit interface (I2C)

The device embeds two I2C peripherals. Refer to Table 8 for the features.
The I2C-bus interface handles communication between the microcontroller and the serial
I2C-bus. It controls all I2C-bus-specific sequencing, protocol, arbitration and timing.
Features of the I2C peripheral:
• I2C-bus specification and user manual rev. 5 compatibility:
– Slave and master modes, multimaster capability
– Standard-mode (Sm), with a bitrate up to 100 kbit/s
– Fast-mode (Fm), with a bitrate up to 400 kbit/s
– Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and extra output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– Programmable setup and hold times
– Clock stretching
• SMBus specification rev 3.0 compatibility:
– Hardware PEC (packet error checking) generation and verification with ACK
control
– Command and data acknowledge control
– Address resolution protocol (ARP) support
– Host and Device support
– SMBus alert
– Timeouts and idle condition detection
• PMBus rev 1.3 standard compatibility
• Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent of the PCLK reprogramming
• Wakeup from Stop mode on address match
• Programmable analog and digital noise filters
• 1-byte buffer with DMA capability

Table 8. I2C implementation

I2C features(1) I2C1 I2C2

Standard mode (up to 100 kbit/s) X X

Fast mode (up to 400 kbit/s) X X
Fast Mode Plus (up to 1 Mbit/s) with extra output drive I/Os X X
Programmable analog and digital noise filters X X
SMBus/PMBus hardware support X -
Independent clock X -
Wakeup from Stop mode on address match X -
1. X: supported

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3.18 Universal synchronous/asynchronous receiver transmitter

(USART)
The device embeds universal synchronous/asynchronous receivers/transmitters that
communicate at speeds of up to 8 Mbit/s.
They provide hardware management of the CTS, RTS and RS485 DE signals,
multiprocessor communication mode, SPI synchronous communication and single-wire
half-duplex communication mode. Some can also support SmartCard communication (ISO
7816), IrDA SIR ENDEC, LIN Master/Slave capability and auto baud rate feature, and have
a clock domain independent of the CPU clock, which allows them to wake up the MCU from
Stop mode. The wakeup events from Stop mode are programmable and can be:
• start bit detection
• any received data frame
• a specific programmed data frame
All USART interfaces can be served by the DMA controller.

Table 9. USART implementation

USART modes/features(1) USART1 USART2

Hardware flow control for modem X X

Continuous communication using DMA X X
Multiprocessor communication X X
SPI emulation master/slave (synchronous mode) X X
Smartcard mode X -
Single-wire half-duplex communication X X
IrDA SIR ENDEC block X -
LIN mode X -
Dual clock domain and wakeup from Stop mode X -
Receiver timeout interrupt X -
Modbus communication X -
Auto baud rate detection X -
Driver Enable X X
1. X: supported

3.19 Serial peripheral interface (SPI)

The device contains two SPIs running at up to 32 Mbits/s in master and slave modes. It
supports half-duplex, full-duplex and simplex communications. A 3-bit prescaler gives eight
master mode frequencies. The frame size is configurable from 4 bits to 16 bits. The SPI
peripherals support NSS pulse mode, TI mode and hardware CRC calculation.
The SPI peripherals can be served by the DMA controller.
The I2S interface mode of the SPI peripheral (if supported, see the following table) supports
four different audio standards can operate as master or slave, in half-duplex communication

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Functional overview STM32G030x6/x8

mode. It can be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data
resolution and synchronized by a specific signal. Audio sampling frequency from 8 kHz up to
192 kHz can be set by an 8-bit programmable linear prescaler. When operating in master
mode, it can output a clock for an external audio component at 256 times the sampling
frequency.

Table 10. SPI/I2S implementation

SPI features(1) SPI1 SPI2

Hardware CRC calculation X X

Rx/Tx FIFO X X
NSS pulse mode X X
2S
I mode X -
TI mode X X
1. X = supported.

3.20 Development support

3.20.1 Serial wire debug port (SW-DP)

An Arm SW-DP interface is provided to allow a serial wire debugging tool to be connected to
the MCU.

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4 Pinouts, pin description and alternate functions

Figure 3. STM32G030Jx SO8N pinout

Top view

PB7/PB8/PB9/PC14-OSC32_IN 1 8 PB5/PB6/PA14-BOOT0/PA15
VDD/VDDA 2 7 PA13
VSS/VSSA 3 6 PA12[PA10]
NRST 4 5 PA8/PA11[PA9]/PB0/PB1

MSv47964V2

Figure 4. STM32G030Fx TSSOP20 pinout

Top view
PB7/PB8 1 20 PB3/PB4/PB5/PB6
PB9/PC14-OSC32_IN 2 19 PA15/PA14-BOOT0
PC15-OSC32_OUT 3 18 PA13
VDD/VDDA 4 17 PA12[PA10]
VSS/VSSA 5 16 PA11[PA9]
NRST 6 15 PB0/PB1/PB2/PA8
PA0 7 14 PA7
PA1 8 13 PA6
PA2 9 12 PA5
PA3 10 11 PA4

MSv47963V1

Figure 5. STM32G030KxT LQFP32 pinout

PA14-BOOT0
PA15

Top view
PB8
PB7
PB6
PB5

PB3
PB4
32
31
30
29
28
27
26
25

PB9 1 24 PA13
PC14-OSC32_IN 2 23 PA12 [PA10]
PC15-OSC32_OUT 3 22 PA11 [PA9]
VDD/VDDA 4 21 PA10
VSS/VSSA 5
LQFP32 20 PC6
NRST 6 19 PA9
PA0 7 18 PA8
PA1 8 17 PB2
10

12
13
14
15
16
11
9

PB0
PB1
PA2
PA3
PA4
PA5
PA6
PA7

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Figure 6. STM32G030CxT LQFP48 pinout

Top view

PA15
PD3
PD2
PD1
PD0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
PC13 1 36 PA14-BOOT0
PC14-OSC32_IN 2 35 PA13
PC15-OSC32_OUT 3 34 PA12 [PA10]
VBAT 4 33 PA11 [PA9]
VREF+ 5 32 PA10
VDD/VDDA 6 31 PC7
VSS/VSSA 7
LQFP48 30 PC6
PF0-OSC_IN 8 29 PA9
PF1-OSC_OUT 9 28 PA8
NRST 10 27 PB15
PA0 11 26 PB14
PA1 12 25 PB13
13
14
15
16
17
18
19
20
21
22
23
24
PB0
PB1
PB2
PB10

PB12
PA2
PA3
PA4
PA5
PA6
PA7

PB11
Table 11. Terms and symbols used in Pin assignment and description table
Column Symbol Definition

Terminal name corresponds to its by-default function at reset, unless otherwise specified in
Pin name
parenthesis under the pin name.
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
RST Reset pin with embedded weak pull-up resistor
Options for FT I/Os

I/O structure _f I/O, Fm+ capable

_a I/O, with analog switch function

_e I/O, with switchable diode to VDDIO1

Note Upon reset, all I/Os are set as analog inputs, unless otherwise specified.

Alternate
Functions selected through GPIOx_AFR registers
Pin functions
functions Additional
Functions directly selected/enabled through peripheral registers
functions

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Table 12. Pin assignment and description

Pin

I/O structure
Pin name

Pin type
Alternate Additional

Note
TSSOP20
LQFP32

LQFP48

(function functions functions

SO8N

upon reset)

(1)(2) TAMP_IN1, RTC_TS,

- - - 1 PC13 I/O FT TIM1_BK
RTC_OUT1, WKUP2
PC14-
(1)(2)
- - - 2 OSC32_IN I/O FT TIM1_BK2 OSC32_IN
(PC14)
PC14-
1 2 2 - OSC32_IN I/O FT (1)(2) TIM1_BK2 OSC32_IN, OSC_IN
(PC14)
PC15-
- 3 3 3 OSC32_OUT I/O FT (1)(2)
OSC32_EN, OSC_EN OSC32_OUT
(PC15)
- - - 4 VBAT S - - - VBAT
- - - 5 VREF+ S - - - -
2 4 4 6 VDD/VDDA S - - - -
3 5 5 7 VSS/VSSA S - - - -
PF0-OSC_IN
- - - 8 I/O FT - TIM14_CH1 OSC_IN
(PF0)
PF1-
- - - 9 OSC_OUT I/O FT - OSC_EN OSC_OUT
(PF1)
(3)
4 6 6 10 NRST I/O RST - NRST

(3) ADC_IN0,
- 7 7 11 PA0 I/O FT_a SPI2_SCK, USART2_CTS,
TAMP_IN2,WKUP1
SPI1_SCK/I2S1_CK,
(3)
- 8 8 12 PA1 I/O FT_ea USART2_RTS_DE_CK, ADC_IN1
I2C1_SMBA, EVENTOUT

(3) SPI1_MOSI/I2S1_SD, ADC_IN2,

- 9 9 13 PA2 I/O FT_a
USART2_TX, WKUP4,LSCO
SPI2_MISO, USART2_RX,
- 10 10 14 PA3 I/O FT_ea - ADC_IN3
EVENTOUT
SPI1_NSS/I2S1_WS,
- - - 15 PA4 I/O FT_a - SPI2_MOSI, TIM14_CH1, ADC_IN4, RTC_OUT2
EVENTOUT

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Table 12. Pin assignment and description (continued)

Pin

I/O structure
Pin name

Pin type
Alternate Additional

Note
TSSOP20
LQFP32

LQFP48

(function functions functions

SO8N

upon reset)

SPI1_NSS/I2S1_WS, ADC_IN4,
- 11 11 - PA4 I/O FT_a - SPI2_MOSI, TIM14_CH1, TAMP_IN1, RTC_TS,
EVENTOUT RTC_OUT1, WKUP2
SPI1_SCK/I2S1_CK,
- 12 12 16 PA5 I/O FT_ea - ADC_IN5
EVENTOUT
SPI1_MISO/I2S1_MCK,
- 13 13 17 PA6 I/O FT_ea - TIM3_CH1, TIM1_BK, ADC_IN6
TIM16_CH1
SPI1_MOSI/I2S1_SD,
- 14 14 18 PA7 I/O FT_a - TIM3_CH2, TIM1_CH1N, ADC_IN7
TIM14_CH1, TIM17_CH1
SPI1_NSS/I2S1_WS,
5 15 15 19 PB0 I/O FT_ea - ADC_IN8
TIM3_CH3, TIM1_CH2N
TIM14_CH1, TIM3_CH4,
5 15 16 20 PB1 I/O FT_ea - ADC_IN9
TIM1_CH3N, EVENTOUT
- 15 17 21 PB2 I/O FT_ea - SPI2_MISO, EVENTOUT ADC_IN10
- - - 22 PB10 I/O FT_fa - SPI2_SCK, I2C2_SCL ADC_IN11
- - - 23 PB11 I/O FT_fa - SPI2_MOSI, I2C2_SDA ADC_IN15
SPI2_NSS, TIM1_BK,
- - - 24 PB12 I/O FT_a - ADC_IN16
EVENTOUT
SPI2_SCK, TIM1_CH1N,
- - - 25 PB13 I/O FT_f - -
I2C2_SCL, EVENTOUT
SPI2_MISO, TIM1_CH2N,
- - - 26 PB14 I/O FT_f - -
I2C2_SDA, EVENTOUT
SPI2_MOSI, TIM1_CH3N,
- - - 27 PB15 I/O FT - RTC_REFIN
EVENTOUT
MCO, SPI2_NSS, TIM1_CH1,
5 15 18 28 PA8 I/O FT - -
EVENTOUT
MCO, USART1_TX,
- - 19 29 PA9 I/O FT_f - TIM1_CH2, SPI2_MISO, -
I2C1_SCL, EVENTOUT
- - 20 30 PC6 I/O FT - TIM3_CH1 -
- - - 31 PC7 I/O FT - TIM3_CH2 -

32/100 DS12991 Rev 6

STM32G030x6/x8 Pinouts, pin description and alternate functions

Table 12. Pin assignment and description (continued)

Pin

I/O structure
Pin name

Pin type
Alternate Additional

Note
TSSOP20
LQFP32

LQFP48

(function functions functions

SO8N

upon reset)

SPI2_MOSI, USART1_RX,
- - 21 32 PA10 I/O FT_f - TIM1_CH3, TIM17_BK, -
I2C1_SDA, EVENTOUT
SPI1_MISO/I2S1_MCK,
(4)
- - - 33 PA11 [PA9] I/O FT_f USART1_CTS, TIM1_CH4, -
TIM1_BK2, I2C2_SCL
SPI1_MISO/I2S1_MCK,
5 16 22 - PA11 [PA9] I/O FT_fa (4) USART1_CTS, TIM1_CH4, ADC_IN15
TIM1_BK2, I2C2_SCL
SPI1_MOSI/I2S1_SD,
(4) USART1_RTS_DE_CK,
- - - 34 PA12 [PA10] I/O FT_f -
TIM1_ETR, I2S_CKIN,
I2C2_SDA
SPI1_MOSI/I2S1_SD,
(4) USART1_RTS_DE_CK,
6 17 23 - PA12 [PA10] I/O FT_fa ADC_IN16
TIM1_ETR, I2S_CKIN,
I2C2_SDA
(5)
7 18 24 35 PA13 I/O FT_ea SWDIO, IR_OUT, EVENTOUT ADC_IN17

(5) SWCLK, USART2_TX,

8 19 25 36 PA14-BOOT0 I/O FT_a ADC_IN18, BOOT0
EVENTOUT
SPI1_NSS/I2S1_WS,
8 19 26 37 PA15 I/O FT - -
USART2_RX, EVENTOUT
EVENTOUT, SPI2_NSS,
- - - 38 PD0 I/O FT - -
TIM16_CH1
EVENTOUT, SPI2_SCK,
- - - 39 PD1 I/O FT - -
TIM17_CH1
- - - 40 PD2 I/O FT - TIM3_ETR, TIM1_CH1N -
USART2_CTS, SPI2_MISO,
- - - 41 PD3 I/O FT - -
TIM1_CH2N
SPI1_SCK/I2S1_CK,
TIM1_CH2,
- 20 27 42 PB3 I/O FT - -
USART1_RTS_DE_CK,
EVENTOUT
SPI1_MISO/I2S1_MCK,
- 20 28 43 PB4 I/O FT - TIM3_CH1, USART1_CTS, -
TIM17_BK, EVENTOUT

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34
Pinouts, pin description and alternate functions STM32G030x6/x8

Table 12. Pin assignment and description (continued)

Pin

I/O structure
Pin name

Pin type
Alternate Additional

Note
TSSOP20
LQFP32

LQFP48

(function functions functions

SO8N

upon reset)

SPI1_MOSI/I2S1_SD,
8 20 29 44 PB5 I/O FT - TIM3_CH2, TIM16_BK, WKUP6
I2C1_SMBA
USART1_TX, TIM1_CH3,
8 20 30 45 PB6 I/O FT_f - TIM16_CH1N, SPI2_MISO, -
I2C1_SCL, EVENTOUT
USART1_RX, SPI2_MOSI,
- - - 46 PB7 I/O FT_f - TIM17_CH1N, I2C1_SDA, -
EVENTOUT
USART1_RX, SPI2_MOSI,
1 1 31 - PB7 I/O FT_fa - TIM17_CH1N, I2C1_SDA, ADC_IN11
EVENTOUT
SPI2_SCK, TIM16_CH1,
1 1 32 47 PB8 I/O FT_f - -
I2C1_SCL, EVENTOUT
IR_OUT, TIM17_CH1,
1 2 1 48 PB9 I/O FT_f - SPI2_NSS, I2C1_SDA, -
EVENTOUT
1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of
current (3 mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (for example to drive a LED).
2. After an RTC domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the
content of the RTC registers. The RTC registers are not reset upon system reset. For details on how to manage
these GPIOs, refer to the RTC domain and RTC register descriptions in the RM0444 reference manual.
3. As in SO8N device, the PA0, PA1, and PA2 GPIOs are bonded with NRST on the pin 4, low level applied to any of
these GPIOs provokes the device reset. To prevent the risk of spurious resets, keep these GPIOs configured at all
times as analog or digital inputs (as opposed to output or alternate function).
4. Pins PA9 and PA10 can be remapped in place of pins PA11 and PA12 (default mapping), using SYSCFG_CFGR1
register.
5. Upon reset, these pins are configured as SW debug alternate functions, and the internal pull-up on PA13 pin and the
internal pull-down on PA14 pin are activated.

34/100 DS12991 Rev 6

 Table 13. Port A alternate function mapping

STM32G030x6/x8
Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PA0 SPI2_SCK USART2_CTS - - - - - -

SPI1_SCK/ USART2_RTS
PA1 - - - - I2C1_SMBA EVENTOUT
I2S1_CK _DE_CK
SPI1_MOSI/
PA2 USART2_TX - - - - - -
I2S1_SD
PA3 SPI2_MISO USART2_RX - - - - - EVENTOUT
SPI1_NSS/
PA4 SPI2_MOSI - - TIM14_CH1 - - EVENTOUT
I2S1_WS
SPI1_SCK/
PA5 - - - - - - EVENTOUT
I2S1_CK
SPI1_MISO/
PA6 TIM3_CH1 TIM1_BKIN - - TIM16_CH1 - -
I2S1_MCK
DS12991 Rev 6

SPI1_MOSI/
PA7 TIM3_CH2 TIM1_CH1N TIM14_CH1 TIM17_CH1 - -
I2S1_SD -
PA8 MCO SPI2_NSS TIM1_CH1 - - - - EVENTOUT
PA9 MCO USART1_TX TIM1_CH2 - SPI2_MISO - I2C1_SCL EVENTOUT
PA10 SPI2_MOSI USART1_RX TIM1_CH3 - - TIM17_BKIN I2C1_SDA EVENTOUT
SPI1_MISO/
PA11 USART1_CTS TIM1_CH4 - - TIM1_BKIN2 I2C2_SCL -
I2S1_MCK
SPI1_MOSI/ USART1_RTS
PA12 TIM1_ETR - - I2S_CKIN I2C2_SDA -
I2S1_SD _DE_CK
PA13 SWDIO IR_OUT - - - - - EVENTOUT
PA14 SWCLK USART2_TX - - - - - EVENTOUT
SPI1_NSS/
PA15 USART2_RX - - - - - EVENTOUT
I2S1_WS
35/100
 Table 14. Port B alternate function mapping
36/100 Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SPI1_NSS/
PB0 TIM3_CH3 TIM1_CH2N - - - - -
I2S1_WS
PB1 TIM14_CH1 TIM3_CH4 TIM1_CH3N - - - - EVENTOUT
PB2 - SPI2_MISO - - - - - EVENTOUT
SPI1_SCK/ USART1_RTS
PB3 TIM1_CH2 - - - - EVENTOUT
I2S1_CK _DE_CK
SPI1_MISO/
PB4 TIM3_CH1 - - USART1_CTS TIM17_BKIN - EVENTOUT
I2S1_MCK
SPI1_MOSI/
PB5 TIM3_CH2 TIM16_BKIN - - - I2C1_SMBA -
I2S1_SD
PB6 USART1_TX TIM1_CH3 TIM16_CH1N - SPI2_MISO - I2C1_SCL EVENTOUT
PB7 USART1_RX SPI2_MOSI TIM17_CH1N - - - I2C1_SDA EVENTOUT
DS12991 Rev 6

PB8 - SPI2_SCK TIM16_CH1 - - - I2C1_SCL EVENTOUT

PB9 IR_OUT - TIM17_CH1 - - SPI2_NSS I2C1_SDA EVENTOUT
PB10 - - - - - SPI2_SCK I2C2_SCL -
PB11 SPI2_MOSI - - - - - I2C2_SDA -
PB12 SPI2_NSS - TIM1_BKIN - - - - EVENTOUT
PB13 SPI2_SCK - TIM1_CH1N - - - I2C2_SCL EVENTOUT
PB14 SPI2_MISO - TIM1_CH2N - - - I2C2_SDA EVENTOUT
PB15 SPI2_MOSI - TIM1_CH3N - - - - EVENTOUT

STM32G030x6/x8
 Table 15. Port C alternate function mapping

STM32G030x6/x8
Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PC6 - TIM3_CH1 - - - - - -
PC7 - TIM3_CH2 - - - - - -
PC13 - - TIM1_BKIN - - - - -
PC14 - - TIM1_BKIN2 - - - - -
PC15 OSC32_EN OSC_EN - - - - - -

Table 16. Port D alternate function mapping

Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PD0 EVENTOUT SPI2_NSS TIM16_CH1 - - - - -

PD1 EVENTOUT SPI2_SCK TIM17_CH1 - - - - -
DS12991 Rev 6

PD2 - TIM3_ETR TIM1_CH1N - - - - -

PD3 USART2_CTS SPI2_MISO TIM1_CH2N - - - - -

Table 17. Port F alternate function mapping

Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PF0 - - TIM14_CH1 - - - - -
PF1 OSC_EN - - - - - - -
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Electrical characteristics STM32G030x6/x8

5 Electrical characteristics

5.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.
Parameter values defined at temperatures or in temperature ranges out of the ordering
information scope are to be ignored.
Packages used for characterizing certain electrical parameters may differ from the
commercial packages as per the ordering information.

5.1.1 Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TA(max) (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).

5.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 3 V. They
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2σ).

5.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

5.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 7.

5.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 8.

Figure 7. Pin loading conditions Figure 8. Pin input voltage

MCU pin MCU pin

C = 50 pF VIN

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STM32G030x6/x8 Electrical characteristics

5.1.6 Power supply scheme

Figure 9. Power supply scheme

VBAT

Backup circuitry
1.55 V to 3.6 V (LSE, RTC and
Power backup registers)
switch

VDD VCORE
VDD/VDDA VDD
Regulator

VDDIO1
OUT

Level shifter
Kernel logic
1 x 100 nF IO (CPU, digital and
GPIOs
+ 1 x 4.7 μF IN
logic memories)

VSS

VDDA
VREF VREF+
VREF+
ADC
100 nF VREF-

VSSA
VSS/VSSA

MSv47984V2

Caution: Power supply pin pair (VDD/VDDA and VSS/VSSA) must be decoupled with filtering
ceramic capacitors as shown above. These capacitors must be placed as close as possible
to, or below, the appropriate pins on the underside of the PCB to ensure the good
functionality of the device.

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82
Electrical characteristics STM32G030x6/x8

5.1.7 Current consumption measurement

Figure 10. Current consumption measurement scheme

IDDVBAT
VBAT
VBAT

IDD
VDD VDD/VDDA
(VDDA)

MSv47901V1

5.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 18, Table 19 and Table 20
may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability. The device mission profile
(application conditions) is compliant with the JEDEC JESD47 qualification standard.
All voltages are defined with respect to VSS.

Table 18. Voltage characteristics

Symbol Ratings Min Max Unit

VDD External supply voltage -0.3 4.0 V

VBAT External supply voltage on VBAT pin -0.3 4.0 V
VREF+ External voltage on VREF+ pin -0.3 Min(VDD + 0.4, 4.0) V
Input voltage on FT_xx -0.3 VDD + 4.0(2)(3)
VIN(1) Input voltage on any other pin -0.3 4.0 V

1. Refer to Table 19 for the maximum allowed injected current values.

2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
3. When an FT_a pin is used by an analog peripheral such as ADC, the maximum VIN is 4 V.

Table 19. Current characteristics

Symbol Ratings Max Unit

IVDD/VDDA Current into VDD/VDDA power pin (source)(1) 100 mA

(2)
IVSS/VSSA Current out of VSS/VSSA ground pin (sink) 100 mA
Output current sunk by any I/O and control pin except FT_f 15
IIO(PIN) Output current sunk by any FT_f pin 20 mA
Output current sourced by any I/O and control pin 15

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STM32G030x6/x8 Electrical characteristics

Table 19. Current characteristics (continued)

Symbol Ratings Max Unit

Total output current sunk by sum of all I/Os and control pins 80
∑IIO(PIN) mA
Total output current sourced by sum of all I/Os and control pins 80

IINJ(PIN)(2) Injected current on a FT_xx pin -5 / NA(3)

mA
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(4) 25 mA
1. All main power (VDD/VDDA, VBAT) and ground (VSS/VSSA) pins must always be connected to the external power
supplies, in the permitted range.
2. A positive injection is induced by VIN > VDDIO1 while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 18: Voltage characteristics for the maximum allowed input voltage values.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).

Table 20. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range -65 to +150 °C

TJ Maximum junction temperature 150 °C

5.3 Operating conditions

5.3.1 General operating conditions

Table 21. General operating conditions

Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency - 0 64

MHz
fPCLK Internal APB clock frequency - 0 64
VDD/DDA Supply voltage - 2.0(1) 3.6 V
VBAT Backup operating voltage - 1.55 3.6 V
VIN I/O input voltage - -0.3 Min(VDD + 3.6, 5.5)(2) V
TA Ambient temperature(3) - -40 85 °C
TJ Junction temperature - -40 105 °C
1. When RESET is released functionality is guaranteed down to VPDR min.
2. For operation with voltage higher than VDD +0.3 V, the internal pull-up and pull-down resistors must be disabled.
3. The TA(max) applies to PD(max). At PD < PD(max) the ambient temperature is allowed to go higher than TA(max) provided
that the junction temperature TJ does not exceed TJ(max). Refer to Section 6.6: Thermal characteristics.

DS12991 Rev 6 41/100

82
Electrical characteristics STM32G030x6/x8

5.3.2 Operating conditions at power-up / power-down

The parameters given in Table 22 are derived from tests performed under the ambient
temperature condition summarized in Table 21.

Table 22. Operating conditions at power-up / power-down

Symbol Parameter Conditions Min Max Unit

VDD rising - ∞
tVDD VDD slew rate µs/V
VDD falling 10 ∞

5.3.3 Embedded reset and power control block characteristics

The parameters given in Table 23 are derived from tests performed under the ambient
temperature conditions summarized in Table 21.

Table 23. Embedded reset and power control block characteristics

Symbol Parameter Conditions(1) Min Typ Max Unit

tRSTTEMPO (2) POR temporization when VDD crosses VPOR VDD rising - 250 400 μs
VPOR(2) Power-on reset threshold - 2.06 2.10 2.14 V
VPDR(2) Power-down reset threshold - 1.96 2.00 2.04 V
Hysteresis in
continuous - 20 -
Vhyst_POR_PDR Hysteresis of VPOR and VPDR mode mV
Hysteresis in
- 30 -
other mode
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
2. Specified by design. Not tested in production.

5.3.4 Embedded voltage reference

The parameters given in Table 24 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.

Table 24. Embedded internal voltage reference

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage -40°C < TJ < 105°C 1.182 1.212 1.232 V
ADC sampling time when reading
tS_vrefint (1) - 4(2) - - µs
the internal reference voltage
Start time of reference voltage
tstart_vrefint - - 8 12(2) µs
buffer when ADC is enable
VREFINT buffer consumption from
IDD(VREFINTBUF) - - 12.5 20(2) µA
VDD when converted by ADC
Internal reference voltage spread
∆VREFINT VDD = 3 V - 5 7.5(2) mV
over the temperature range

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STM32G030x6/x8 Electrical characteristics

Table 24. Embedded internal voltage reference (continued)

Symbol Parameter Conditions Min Typ Max Unit
(2)
TCoeff_vrefint Temperature coefficient - - 30 50 ppm/°C
ACoeff Long term stability 1000 hours, T = 25 °C - 300 1000(2) ppm
(2)
VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200 ppm/V
VREFINT_DIV1 1/4 reference voltage 24 25 26
%
VREFINT_DIV2 1/2 reference voltage - 49 50 51
VREFINT
VREFINT_DIV3 3/4 reference voltage 74 75 76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Specified by design. Not tested in production.

Figure 11. VREFINT vs. temperature

V
1.235

1.23

1.225

1.22

1.215

1.21

1.205

1.2

1.195

1.19

1.185
-40 -20 0 20 40 60 80 100 120 °C
Mean Min Max
MSv40169V2

5.3.5 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 10: Current consumption
measurement scheme.

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82
Electrical characteristics STM32G030x6/x8

Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in analog input mode
• All peripherals are disabled except when explicitly mentioned
• The flash memory access time is adjusted with the minimum wait states number,
depending on the fHCLK frequency (refer to the table “Number of wait states according
to CPU clock (HCLK) frequency” available in the RM0454 reference manual).
• When the peripherals are enabled fPCLK = fHCLK
• For flash memory and shared peripherals fPCLK = fHCLK = fHCLKS
Unless otherwise stated, values given in Table 25 through Table 31 are derived from tests
performed under ambient temperature and supply voltage conditions summarized in
Table 21: General operating conditions.

Table 25. Current consumption in Run and Low-power run modes

at different die temperatures
Conditions Typ Max(1)
Symbol Parameter Unit
Fetch
General fHCLK 25°C 85°C 25°C 85°C
from(2)

64 MHz 5.7 5.9 8.0 8.3

56 MHz 5.1 5.2 7.1 7.1
48 MHz Flash 4.6 4.7 5.7 6.0
32 MHz memory 3.2 3.3 4.6 4.9
Range 1;
PLL enabled; 24 MHz 2.5 2.6 3.5 3.8
fHCLK = fHSI bypass 16 MHz 1.6 1.7 2.5 2.9
(≤16 MHz),
fHCLK = fPLLRCLK 64 MHz 4.7 4.8 7.2 7.5
(>16 MHz); 56 MHz 4.2 4.3 6.5 6.7
(3)
Supply 48 MHz 3.7 3.9 5.7 6.0
IDD(Run) current in Run SRAM mA
mode 32 MHz 2.6 2.7 4.1 4.3
24 MHz 2.0 2.1 3.2 3.5
16 MHz 1.3 1.3 2.3 2.4
16 MHz 1.3 1.3 2.0 2.3
Range 2; Flash
PLL enabled; 8 MHz 0.7 0.8 1.4 1.5
memory
fHCLK = fHSI bypass 2 MHz 0.3 0.3 0.6 0.9
(≤16 MHz),
fHCLK = fPLLRCLK 16 MHz 1.1 1.1 1.9 2.1
(>16 MHz); 8 MHz SRAM 0.6 0.6 1.2 1.4
(3)
2 MHz 0.2 0.3 0.6 0.9

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STM32G030x6/x8 Electrical characteristics

Table 25. Current consumption in Run and Low-power run modes

at different die temperatures (continued)
Conditions Typ Max(1)
Symbol Parameter Unit
Fetch
General fHCLK 25°C 85°C 25°C 85°C
from(2)

2 MHz 182 226 570 790

1 MHz 99 132 480 700
Flash
500 kHz 58 89 430 630
memory
PLL disabled; 125 kHz 25 56 370 600
Supply fHCLK = fHSE bypass
current in (> 32 kHz), 32 kHz 17 47 330 480
IDD(LPRun) µA
Low-power fHCLK = fLSE bypass 2 MHz 161 191 550 800
run mode (= 32 kHz);
(3) 1 MHz 91 114 470 750
500 kHz SRAM 48 81 410 710
125 kHz 21 51 360 500
32 kHz 15 37 310 400
1. Based on characterization results, not tested in production.
2. Prefetch and cache enabled when fetching from flash memory. Code compiled with high optimization for space in SRAM.
3. VDD = 3.0 V for values in Typ columns and 3.6 V for values in Max columns, all peripherals disabled.

Table 26. Current consumption in Sleep and Low-power sleep modes

Conditions Typ Max(1)
Symbol Parameter Unit
General Voltage fHCLK 25°C 85°C 25°C 85°C
scaling
64 MHz 1.4 1.5 2.2 2.4
56 MHz 1.3 1.4 1.9 2.1

Flash memory enabled; 48 MHz 1.2 1.2 1.9 1.9

Range 1
fHCLK = fHSE bypass 32 MHz 0.9 0.9 1.4 1.5
Supply
(≤16 MHz; PLL disabled),
IDD(Sleep) current in 24 MHz 0.7 0.8 1.1 1.3 mA
f =f
Sleep mode HCLK PLLRCLK
(>16 MHz; PLL enabled); 16 MHz 0.4 0.4 0.7 0.8
All peripherals disabled 16 MHz 0.3 0.4 0.6 0.7
Range 2 8 MHz 0.2 0.3 0.3 0.6
2 MHz 0.1 0.2 0.2 0.5
2 MHz 43 77 175 410
Flash memory disabled;
Supply 1 MHz 29 60 150 375
PLL disabled;
current in
IDD(LPSleep) fHCLK = fHSE bypass (> 32 kHz), 500 kHz 23 52 145 285 µA
Low-power
fHCLK = fLSE bypass (= 32 kHz);
sleep mode 125 kHz 16 46 130 270
All peripherals disabled
32 kHz 13 44 125 260

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82
Electrical characteristics STM32G030x6/x8

1. Based on characterization results, not tested in production.

Table 27. Current consumption in Stop 0 mode

Conditions Typ Max(1)
Symbol Parameter Unit
VDD 25°C 85°C 25°C 85°C

2.4 V 290 320 395 540

HSI kernel ON 3V 295 325 415 580

Supply current 3.6 V 295 325 445 595

IDD(Stop 0) µA
in Stop 0 mode 2.4 V 105 145 145 265
HSI kernel OFF 3V 105 150 150 285
3.6 V 110 150 150 295
1. Based on characterization results, not tested in production.

Table 28. Current consumption in Stop 1 mode

Conditions Typ Max(1)
Symbol Parameter Unit
RTC VDD 25°C 85°C 25°C 85°C

2.4 V 3.4 28 17 130

Disabled 3V 3.6 28 22 140
Supply Flash 3.6 V 3.9 29 28 155
IDD(Stop 1) current in memory not µA
Stop 1 mode powered Enabled 2.4 V 3.9 28 22 140
(clocked by
3V 4.1 29 23 155
LSE
bypass) 3.6 V 4.6 29 28 160
1. Based on characterization results, not tested in production.

Table 29. Current consumption in Standby mode

Conditions Typ Max(1)
Symbol Parameter Unit
General VDD 25°C 85°C 25°C 85°C
2.4 V 1.0 1.8 2.1 14
RTC disabled 3.0 V 1.2 2.1 2.7 16
Supply current in 3.6 V 1.4 2.5 3.0 19
IDD(Standby) µA
Standby mode 2.4 V 1.3 2.1 2.2 17
RTC enabled,
3.0 V 1.7 2.5 2.9 19
clocked by LSI
3.6 V 2.1 3.0 3.8 19
1. Based on characterization results, not tested in production.

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STM32G030x6/x8 Electrical characteristics

Table 30. Current consumption in VBAT mode

Conditions Typ
Symbol Parameter Unit
RTC VBAT 25°C 85°C

Enabled, clocked by 2.4 V 270 360

LSE bypass at 3.0 V 360 460
32.768 kHz 3.6 V 470 600
Supply current in
IDD_VBAT nA
VBAT mode 2.4 V 410 440
Enabled, clocked by
LSE crystal at 3.0 V 510 530
32.768 kHz 3.6 V 630 770

I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used with internal or external pull-up or pull-down resistor generate current
consumption when the pin is externally or internally tied low or high, respectively. The value
of this current consumption can be simply computed by using the pull-up/pull-down resistor
values. For internal pull-up/pull-down resistors, the indicative values are given in Table 48:
I/O static characteristics. Any other external load must also be considered to estimate the
current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Table 31: Current consumption of peripherals), the I/Os used by an application also
contribute to the current consumption. When an I/O pin switches, it uses the current from
the I/O supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive
load (internal and external) connected to the pin:

I SW = V DDIO1 × f SW × C

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where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDIO1 is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in the following table. The MCU
is placed under the following conditions:
• All I/O pins are in Analog mode
• The given value is calculated by measuring the difference of the current consumptions:
– when the peripheral is clocked on
– when the peripheral is clocked off
• Ambient operating temperature and supply voltage conditions summarized in Table 18:
Voltage characteristics
• The power consumption of the digital part of the on-chip peripherals is given in the
following table. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.

Table 31. Current consumption of peripherals

Consumption in µA/MHz
Peripheral Bus
Low-power run
Range 1 Range 2
and sleep

IOPORT Bus IOPORT 0.5 0.4 0.3

GPIOA IOPORT 3.1 2.4 3.0
GPIOB IOPORT 2.9 2.3 3.0
GPIOC IOPORT 0.9 0.8 1.0
GPIOD IOPORT 0.7 0.6 1.0
GPIOF IOPORT 0.5 0.5 1.0
Bus matrix AHB 3.2 2.2 2.8
All AHB Peripherals AHB 9.8 8.2 8.5
DMA1/DMAMUX AHB 3.4 2.9 3.0
CRC AHB 0.5 0.4 0.5
FLASH AHB 4.3 3.6 3.5
All APB peripherals APB 23.5 20.0 20.5
AHB to APB bridge(1) APB 0.2 0.2 0.1
PWR APB 0.4 0.3 0.5
SYSCFG APB 0.4 0.4 0.5
WWDG APB 0.2 0.3 0.5

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Table 31. Current consumption of peripherals (continued)

Consumption in µA/MHz
Peripheral Bus
Low-power run
Range 1 Range 2
and sleep

TIM1 APB 7.0 5.9 6.5

TIM3 APB 3.6 3.1 3.5
TIM14 APB 1.5 1.3 1.5
TIM16 APB 2.3 2.0 2.5
TIM17 APB 1.0 0.8 0.3
I2C1 APB 3.2 2.7 3.0
I2C2 APB 0.7 0.6 1.0
SPI1 APB 2.2 1.8 2.0
SPI2 APB 1.3 1.1 1.5
USART1 APB 6.6 5.6 6.0
USART2 APB 1.8 1.5 2.0
ADC APB 1.6 1.5 1.5
1. The AHB to APB Bridge is automatically active when at least one peripheral is ON on the APB.

5.3.6 Wakeup time from low-power modes and voltage scaling

transition times
The wakeup times given in Table 32 are the latency between the event and the execution of
the first user instruction.

Table 32. Low-power mode wakeup times(1)

Symbol Parameter Conditions Typ Max Unit

Wakeup time from

CPU
tWUSLEEP Sleep to Run - 11 11
cycles
mode

Wakeup time from Transiting to Low-power-run-mode execution in flash

CPU
tWULPSLEEP Low-power sleep memory not powered in Low-power sleep mode; 11 14
cycles
mode HCLK = HSI16 / 8 = 2 MHz
Transiting to Run-mode execution in flash memory not
powered in Stop 0 mode;
5.6 6
HCLK = HSI16 = 16 MHz;
Wakeup time from Regulator in Range 1 or Range 2
tWUSTOP0 µs
Stop 0 Transiting to Run-mode execution in SRAM or in flash
memory powered in Stop 0 mode;
2 2.4
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2

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Table 32. Low-power mode wakeup times(1) (continued)

Symbol Parameter Conditions Typ Max Unit

Transiting to Run-mode execution in flash memory not

powered in Stop 1 mode;
9.0 11.2
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
Transiting to Run-mode execution in SRAM or in flash
memory powered in Stop 1 mode;
5 7.5
HCLK = HSI16 = 16 MHz;
Wakeup time from Regulator in Range 1 or Range 2
tWUSTOP1 µs
Stop 1 Transiting to Low-power-run-mode execution in flash
memory not powered in Stop 1 mode;
22 25.3
HCLK = HSI16/8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
Transiting to Low-power-run-mode execution in SRAM or
in flash memory powered in Stop 1 mode;
18 23.5
HCLK = HSI16 / 8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
Transiting to Run mode;
Wakeup time from
tWUSTBY HCLK = HSI16 = 16 MHz; 14.5 30 µs
Standby mode
Regulator in Range 1
Wakeup time from Transiting to Run mode;
tWULPRUN Low-power run 5 7 µs
HSISYS = HSI16/8 = 2 MHz
mode(2)
1. Based on characterization results, not tested in production.
2. Time until REGLPF flag is cleared in PWR_SR2.

Table 33. Regulator mode transition times(1)

Symbol Parameter Conditions Typ Max Unit

Transition times between regulator

tVOST HSISYS = HSI16 20 40 µs
Range 1 and Range 2(2)
1. Based on characterization results, not tested in production.
2. Time until VOSF flag is cleared in PWR_SR2.

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5.3.7 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 12 for recommended clock input waveform.

Table 34. High-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Voltage scaling
- 8 48
Range 1
fHSE_ext User external clock source frequency MHz
Voltage scaling
- 8 26
Range 2
VHSEH OSC_IN input pin high level voltage - 0.7 VDDIO1 - VDDIO1 V
VHSEL OSC_IN input pin low level voltage - VSS - 0.3 VDDIO1 V
Voltage scaling
7 - -
tw(HSEH) Range 1
OSC_IN high or low time ns
tw(HSEL) Voltage scaling
18 - -
Range 2
1. Specified by design. Not tested in production.

Figure 12. High-speed external clock source AC timing diagram

tw(HSEH)

VHSEH
90%
10%
VHSEL

tr(HSE) t
tf(HSE) tw(HSEL)
THSE

MS19214V2

Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 13 for recommended clock input waveform.

Table 35. Low-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fLSE_ext User external clock source frequency - - 32.768 1000 kHz

VLSEH OSC32_IN input pin high level voltage - 0.7 VDDIO1 - VDDIO1 V

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Table 35. Low-speed external user clock characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

VLSEL OSC32_IN input pin low level voltage - VSS - 0.3 VDDIO1 V
tw(LSEH)
OSC32_IN high or low time - 250 - - ns
tw(LSEL)
1. Specified by design. Not tested in production.

Figure 13. Low-speed external clock source AC timing diagram

tw(LSEH)

VLSEH
90%
10%
VLSEL

tr(LSE) t
tf(LSE) tw(LSEL)
TLSE

MS19215V2

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 36. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).

Table 36. HSE oscillator characteristics(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 8 48 MHz

RF Feedback resistor - - 200 - kΩ

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Table 36. HSE oscillator characteristics(1) (continued)

Symbol Parameter Conditions(2) Min Typ Max Unit
(3)
During startup - - 5.5
VDD = 3 V,
Rm = 30 Ω, - 0.58 -
CL = 10 pF@8 MHz
VDD = 3 V,
Rm = 45 Ω, - 0.59 -
CL = 10 pF@8 MHz

IDD(HSE) HSE current consumption VDD = 3 V, mA

Rm = 30 Ω, - 0.89 -
CL = 5 pF@48 MHz
VDD = 3 V,
Rm = 30 Ω, - 1.14 -
CL = 10 pF@48 MHz
VDD = 3 V,
Rm = 30 Ω, - 1.94 -
CL = 20 pF@48 MHz
Maximum critical crystal
Gm Startup - - 1.5 mA/V
transconductance
tSU(HSE)(4) Startup time VDD is stabilized - 2 - ms
1. Specified by design. Not tested in production.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 14). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

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Figure 14. Typical application with an 8 MHz crystal

Resonator with integrated

capacitors
CL1

OSC_IN fHSE
Bias
8 MHz controlled
resonator RF gain

REXT (1) OSC_OUT

CL2

MS19876V1

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 37. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).

Table 37. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

LSEDRV[1:0] = 00
- 250 -
Low drive capability
LSEDRV[1:0] = 01
- 315 -
Medium low drive capability
IDD(LSE) LSE current consumption nA
LSEDRV[1:0] = 10
- 500 -
Medium high drive capability
LSEDRV[1:0] = 11
- 630 -
High drive capability
LSEDRV[1:0] = 00
- - 0.5
Low drive capability
LSEDRV[1:0] = 01
- - 0.75
Maximum critical crystal Medium low drive capability
Gmcritmax µA/V
gm LSEDRV[1:0] = 10
- - 1.7
Medium high drive capability
LSEDRV[1:0] = 11
- - 2.7
High drive capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s
1. Specified by design. Not tested in production.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.

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3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 15. Typical application with a 32.768 kHz crystal

Resonator with integrated

capacitors
CL1

OSC32_IN fLSE

32.768 kHz Drive

resonator programmable
amplifier

OSC32_OUT
CL2

MS30253V2

Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.

5.3.8 Internal clock source characteristics

The parameters given in Table 38 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 38. HSI16 oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz

HSI16 oscillator frequency drift over TA= 0 to 85 °C -1 - 1 %

∆Temp(HSI16)
temperature TA= -40 to 85 °C -2 - 1.5 %
HSI16 oscillator frequency drift over
∆VDD(HSI16) VDD=VDD(min) to 3.6 V -0.1 - 0.05 %
VDD
From code 127 to 128 -8 -6 -4
From code 63 to 64
-5.8 -3.8 -1.8
TRIM HSI16 frequency user trimming step From code 191 to 192 %
For all other code
0.2 0.3 0.4
increments
DHSI16(2) Duty Cycle - 45 - 55 %
tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs

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Table 38. HSI16 oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit
(2)
tstab(HSI16) HSI16 oscillator stabilization time - - 3 5 μs
IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA
1. Based on characterization results, not tested in production.
2. Specified by design. Not tested in production.

Low-speed internal (LSI) RC oscillator

Table 39. LSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDD = 3.0 V, TA = 30 °C 31.04 - 32.96

fLSI LSI frequency VDD = VDD(min) to 3.6 V, TA = -40 to kHz
29.5 - 34
85 °C
tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs
tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 125 180 μs
LSI oscillator power
IDD(LSI)(2) - - 110 180 nA
consumption
1. Based on characterization results, not tested in production.
2. Specified by design. Not tested in production.

5.3.9 PLL characteristics

The parameters given in Table 40 are derived from tests performed under temperature and
VDD supply voltage conditions summarized in Table 21: General operating conditions.

Table 40. PLL characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN PLL input clock frequency(2) - 2.66 - 16 MHz

DPLL_IN PLL input clock duty cycle - 45 - 55 %

Voltage scaling Range 1 3.09 - 122

fPLL_P_OUT PLL multiplier output clock P MHz
Voltage scaling Range 2 3.09 - 40
Voltage scaling Range 1 12 - 64
fPLL_R_OUT PLL multiplier output clock R MHz
Voltage scaling Range 2 12 - 16
Voltage scaling Range 1 96 - 344
fVCO_OUT PLL VCO output MHz
Voltage scaling Range 2 96 - 128
tLOCK PLL lock time - - 15 40 μs
RMS cycle-to-cycle jitter - 50 -
Jitter System clock 56 MHz ±ps
RMS period jitter - 40 -

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Table 40. PLL characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

VCO freq = 96 MHz - 200 260

PLL power consumption
IDD(PLL) VCO freq = 192 MHz - 300 380 μA
on VDD(1)
VCO freq = 344 MHz - 520 650
1. Specified by design. Not tested in production.
2. Make sure to use the appropriate division factor M to obtain the specified PLL input clock values.

5.3.10 Flash memory characteristics

Table 41. Flash memory characteristics(1)

Symbol Parameter Conditions Typ Max Unit

tprog 64-bit programming time - 85 125 µs

Normal programming 2.7 4.6
tprog_row Row (32 double word) programming time ms
Fast programming 1.7 2.8
Normal programming 21.8 36.6
tprog_page Page (2 Kbyte) programming time ms
Fast programming 13.7 22.4
tERASE Page (2 Kbyte) erase time - 22.0 40.0 ms
Normal programming 0.7 1.2
tprog_bank Bank (64 Kbyte(2)) programming time s
Fast programming 0.4 0.7
tME Mass erase time - 22.1 40.1 ms
Programming 3 -
IDD(FlashA) Average consumption from VDD Page erase 3 - mA
Mass erase 5 -
Programming, 2 µs peak
7 -
IDD(FlashP) Maximum current (peak) duration mA
Erase, 41 µs peak duration 7 -
1. Specified by design. Not tested in production.
2. Values provided also apply to devices with less flash memory than one 64 Kbyte bank

Table 42. Flash memory endurance and data retention

Symbol Parameter Conditions Min(1) Unit

NEND Endurance TA = -40 to +85 °C 1 kcycles

tRET Data retention 1 kcycle(2) at TA = 85 °C 15 Years
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.

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5.3.11 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 43. They are based on the EMS levels and classes
defined in application note AN1709.

Table 43. EMS characteristics

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, TA = +25 °C,

Voltage limits to be applied on any I/O pin to
VFESD fHCLK = 64 MHz, LQFP48, 2B
induce a functional disturbance
conforming to IEC 61000-4-2
Fast transient voltage burst limits to be applied VDD = 3.3 V, TA = +25 °C,
VEFTB through 100 pF on VDD and VSS pins to induce a fHCLK = 64 MHz, LQFP48, 5A
functional disturbance conforming to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• corrupted program counter
• unexpected reset
• critical data corruption (for example control registers)

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Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.

Table 44. EMI characteristics

Symbol Parameter Conditions Monitored frequency band Value Unit

0.1 MHz to 30 MHz -4

fHSE = 8 MHz
30 MHz to 130 MHz 1
Peak(1) fHCLK = 64 MHz dBµV
SEMI VDD = 3.6 V, TA = 25 °C, 130 MHz to 1 GHz 3
LQFP64 package
1 GHz to 2 GHz 8
compliant with IEC 61967-2
Level(2) 0.1 MHz to 2 GHz 2.5 -
1. Refer to AN1709 “EMI radiated test” section.
2. Refer to AN1709 “EMI level classification” section

5.3.12 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.

Table 45. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic discharge voltage TA = +25 °C, conforming to

VESD(HBM) 2 2000 V
(human body model) ANSI/ESDA/JEDEC JS-001
Electrostatic discharge voltage TA = +25 °C, conforming to
VESD(CDM) C2a 500 V
(charge device model) ANSI/ESDA/JEDEC JS-002
1. Based on characterization results, not tested in production.

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Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin.
• A current is injected to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 46. Electrical sensitivity

Symbol Parameter Conditions Class

LU Static latch-up class TA = +85 °C conforming to JESD78 II Level A

5.3.13 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDDIO1 (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out-of-range parameter: ADC error above a certain limit
(higher than 5 LSB TUE), induced leakage current on adjacent pins out of conventional
limits (-5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.

Table 47. I/O current injection susceptibility(1)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

All except PA1, PA3, PA5, PA6, PA13,

-5 N/A
PB0, PB1, PB2, and PB8
Injected current PA1, PA5, PA13, PB1, PB2 0 +5 / N/A(2)
IINJ mA
on pin
PA3, PA6, PB0 -5 +5 / N/A(2)
PB8 0 N/A
1. Based on characterization results, not tested in production.
2. The injection current value is applicable when the switchable diode is activated, N/A when not activated.

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5.3.14 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 48 are derived from tests
performed under the conditions summarized in Table 21: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.
Note: For information on GPIO configuration, refer to the application note AN4899 “STM32 GPIO
configuration for hardware settings and low-power consumption” available from the ST
website www.st.com.

Table 48. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

0.3 x VDDIO1
(2) V
I/O input low level
VIL(1) All VDD(min) < VDDIO1 < 3.6 V - -
voltage 0.39 x VDDIO1
- 0.06 (3)
0.7 x VDDIO1(2) - -
(1) I/O input high level
VIH All VDD(min) < VDDIO1 < 3.6 V 0.49 x VDDIO1 V
voltage - -
+ 0.26(3)
I/O input FT_xx,
Vhys(3) VDD(min) < VDDIO1 < 3.6 V - 200 - mV
hysteresis NRST
0 < VIN ≤ VDDIO1 - - ±70
All
except VDDIO1 ≤ VIN ≤ VDDIO1+1 V - - 600(4) nA
Input leakage FT_e
Ilkg VDDIO1 +1 V < VIN ≤ 5.5 V(3) - - 150(4)
current(3)
FT_e
(5) 0 < VIN ≤ VDDIO1 - - 5 µA

Weak pull-up
RPU equivalent resistor VIN = VSS 25 40 55 kΩ
(6)

Weak pull-down
RPD equivalent VIN = VDDIO1 25 40 55 kΩ
resistor(6)
I/O pin
CIO - - 5 - pF
capacitance
1. Refer to Figure 16: I/O input characteristics.
2. Tested in production.
3. Guaranteed by design.
4. This value represents the pad leakage of the I/O itself. The total product pad leakage is provided by this formula:
ITotal_Ileak_max = 10 µA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max).
5. FT_e with diode enabled. Input leakage current of FT_e I/Os with the diode disabled is the same as standard I/Os.
6. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).

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All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters, as shown
in Figure 16.

Figure 16. I/O input characteristics

3

Minimum required
2.5
logic level 1 zone
nt)
ireme
ard requ TTL standard requirement
2 S stand
(CMO
V DDIO
VIN (V) = 0.7
V IHmin
1.5
+ 0.26
0.49 VDDIO
VIHmin = Undefined input range

1
VDDIO - 0.06
VILmax = 0.39 dard require
ment)
TTL standard requirement
(CMOS stan
VDDIO
0.5
VILmax = 0.3
Minimum required
logic level 0 zone
0
2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6

Device characteristics VDDIO (V)

Test thresholds MSv47926V1

Characteristics of FT_e I/Os

The following table and figure specify input characteristics of FT_e I/Os.

Table 49. Input characteristics of FT_e I/Os

Symbol Parameter Conditions Min Typ Max Unit

IINJ Injected current on pin - - - 5 mA

VDDIO1-VIN Voltage over VDDIO1 IINJ = 5 mA - - 2 V
Rd Diode dynamic serial resistor IINJ = 5 mA - - 300 Ω

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Figure 17. Current injection into FT_e input with diode active
5

-40°C 25°C 125°C

IINJ (mA)

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2

VIN – VDDIO1 (V) MSv63112V1

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±6 mA, and up to
±15 mA with relaxed VOL/VOH.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
• The sum of the currents sourced by all the I/Os on VDDIO1, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 18: Voltage characteristics).
• The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating IVSS (see Table 18:
Voltage characteristics).

Output voltage levels

Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 21: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT OR TT
unless otherwise specified).

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Table 50. Output voltage characteristics(1)(2)

Symbol Parameter Conditions Min Max Unit

VOL Output low level voltage for an I/O pin CMOS port(3) - 0.4 V
|IIO| 6 mA
VOH Output high level voltage for an I/O pin VDDIO1 ≥ 2.7 V VDDIO1 - 0.4 - V

VOL(4) Output low level voltage for an I/O pin TTL port(3) - 0.4 V
|IIO| = 6 mA
VOH(4) Output high level voltage for an I/O pin VDDIO1 ≥ 2.7 V 2.4 - V

VOL(4) Output low level voltage for an I/O pin All I/Os - 1.3 V
|IIO| = 15 mA
VOH(4) Output high level voltage for an I/O pin VDDIO1 ≥ 2.7 V VDDIO1 - 1.3 - V

VOL(4) Output low level voltage for an I/O pin |IIO| = 3 mA - 0.4 V
VOH(4) Output high level voltage for an I/O pin VDDIO1 ≥ VDD(min) VDDIO1 - 0.45 - V
|IIO| = 20 mA
- 0.4
VOLFM+ Output low level voltage for an FT I/O VDDIO1 ≥ 2.7 V
(4) V
pin in FM+ mode (FT I/O with _f option) |I | = 9 mA
IO - 0.4
VDDIO1 ≥ VDD(min)
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 18:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. As PC13, PC14 and PC15 are supplied through the power switch, the sum of currents sourced by those I/Os must not
exceed 3 mA.
3. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
4. Specified by design. Not tested in production.

Output buffer timing characteristics

The definition and values of input/output AC characteristics are given in Figure 18 and
Table 51, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 21: General
operating conditions.

Table 51. Non-FT_c I/O output timing characteristics(1)(2)

Speed Symbol Parameter Conditions Min Max Unit
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 2
C=50 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 0.35
fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 3
C=10 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 0.45
00
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 100
C=50 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 225
tr/tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 75
C=10 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 150

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Table 51. Non-FT_c I/O output timing characteristics(1)(2) (continued)

Speed Symbol Parameter Conditions Min Max Unit
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 10
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 2
fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 15
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 2.5
01
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 30
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 60
tr/tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 15
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 30
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 30
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 15
fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 60
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 30
10
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 11
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 22
tr/tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 4
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 8
C=30 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 60
C=30 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 30
fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 80(3)
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 40
11
C=30 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 5.5
C=30 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 11
tr/tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 2.5
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 5
fmax Maximum frequency - 1 MHz
Fm+ C=50 pF, 1.6 V ≤ VDDIO1 ≤ 3.6 V
tf Output fall time(4) - 5 ns
1. The I/O speed is configured with the OSPEEDRy[1:0] bitfield. The FM+ mode is configured through the SYSCFG_CFGR1
register. Refer to the reference manual RM0454 for the description of the GPIO port configuration.
2. Specified by design. Not tested in production.
3. This value represents the I/O capability but the maximum system frequency is limited to 64 MHz.
4. The fall time is defined between 70% and 30% of the output waveform, according to I2C specification.

Table 52. FT_c I/O output timing characteristics(1)(2)

Speed Symbol Parameter Conditions Min Max Unit
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 2
fmax Maximum frequency MHz
C=50 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 1
0
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 170
tr/tf Output rise and fall time ns
C=50 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 330

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Table 52. FT_c I/O output timing characteristics(1)(2) (continued)

Speed Symbol Parameter Conditions Min Max Unit
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 10
fmax Maximum frequency MHz
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 5
1
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 35
tr/tf Output rise and fall time ns
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 65
1. The I/O speed is configured using the OSPEEDRy[0] bit. Refer to the reference manual RM0454 for description of the
GPIO port configuration.
2. Specified by design. Not tested in production.

Figure 18. I/O AC characteristics definition

90% 10%

50% 50%

10% 90%

t r(IO)out t f(IO)out

Maximum frequency is achieved with a duty cycle at (45 - 55%) when loaded by the
specified capacitance.

MS32132V4

5.3.15 NRST input characteristics

The NRST input driver uses CMOS technology. It is connected to a permanent
pull-up resistor, RPU.
Unless otherwise specified, the parameters given in the following table are derived from
tests performed under the ambient temperature and supply voltage conditions summarized
in Table 21: General operating conditions.

Table 53. NRST pin characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

NRST input low level

VIL(NRST) - - - 0.3 x VDDIO1 V
voltage
NRST input high level
VIH(NRST) - 0.7 x VDDIO1 - - V
voltage
NRST Schmitt trigger
Vhys(NRST) - - 200 - mV
voltage hysteresis
Weak pull-up
RPU VIN = VSS 25 40 55 kΩ
equivalent resistor(2)

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Table 53. NRST pin characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

NRST input filtered

VF(NRST) - - - 70 ns
pulse
NRST input not filtered
VNF(NRST) 2.0 V ≤ VDD ≤ 3.6 V 350 - - ns
pulse
1. Specified by design. Not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimal (~10% order).

Figure 19. Recommended NRST pin protection

External
reset circuit(1) VDD

RPU
NRST(2) Internal reset
Filter

0.1 μF(3)

MS19878V4

1. The reset network protects the device against parasitic resets.

2. The user must ensure that, upon power-on, the level on the NRST pin can exceed the minimum VIH(NRST)
level. Otherwise, the device does not exit the power-on reset.
3. The external capacitor on NRST must be placed as close as possible to the device.

5.3.16 Extended interrupt and event controller input (EXTI) characteristics

The pulse on the interrupt input must equal or exceed the minimum length, to guarantee that
it is detected by the event controller.

Table 54. EXTI input characteristics(1)

Symbol Parameter Min Typ Max Unit

PLEC Pulse length to event controller - - ns

1. Specified by design. Not tested in production.

5.3.17 Analog switch booster

Table 55. Analog switch booster characteristics(1)

Symbol Parameter Min Typ Max Unit

VDD Supply voltage VDD(min) - 3.6 V

tSU(BOOST) Booster startup time - - 240 µs

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Table 55. Analog switch booster characteristics(1) (continued)

Symbol Parameter Min Typ Max Unit

Booster consumption for

- - 500
VDD ≤ 2.7 V
IDD(BOOST) µA
Booster consumption for
- - 900
2.7 V ≤ VDD ≤ 3.6 V
1. Specified by design. Not tested in production.

5.3.18 Analog-to-digital converter characteristics

Unless otherwise specified, the parameters given in Table 56 are preliminary values derived
from tests performed under ambient temperature, fPCLK frequency and VDDA supply voltage
conditions summarized in Table 21: General operating conditions.
Note: It is recommended to perform a calibration after each power-up.

Table 56. ADC characteristics(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

VDDA Analog supply voltage - 2.0 - 3.6 V

Positive reference - 2 - VDDA

VREF+ V
voltage
Range 1 0.14 - 35
fADC ADC clock frequency MHz
Range 2 0.14 - 16
ADC analog clock duty
DADC(3) - 45 - 55 %
cycle
12 bits - - 2.50
10 bits - - 2.92
fs Sampling rate MSps
8 bits - - 3.50
6 bits - - 4.38

External trigger fADC = 35 MHz; 12 bits - - 2.33

fTRIG MHz
frequency 12 bits - - fADC/15
Conversion voltage
VAIN (4) - VSSA - VREF+ V
range
External input
RAIN - - - 50 kΩ
impedance
Internal sample and
CADC - - 5 - pF
hold capacitor
Conversion
tSTAB ADC power-up time - 2
cycle
fADC = 35 MHz 2.35 µs
tCAL Calibration time
- 82 1/fADC

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Table 56. ADC characteristics(1) (continued)

Symbol Parameter Conditions(2) Min Typ Max Unit
1.5 fADC 1.5 fADC
CKMODE[1:0] = 00 + 2 fPCLK - + 3 fPCLK -
cycles cycles
ADC_DR register write CKMODE[1:0] = 01 - 4.5 -
WLATENCY
latency
CKMODE[1:0] = 10 - 8.5 - 1/fPCLK
CKMODE[1:0] = 11 - 2.5 -
CKMODE[1:0] = 00 2 - 3 1/fADC

Trigger conversion CKMODE[1:0] = 01 6.5

tLATR
latency CKMODE[1:0] = 10 12.5 1/fPCLK
CKMODE[1:0] = 11 3.5
0.043 - 4.59 µs
ts Sampling time fADC = 35 MHz
1.5 - 160.5 1/fADC

ADC voltage regulator

tADCVREG_STUP - - - 20 µs
start-up time
fADC = 35 MHz
0.40 - 4.95 µs
Total conversion time Resolution = 12 bits
tCONV (including sampling ts + 12.5 cycles for successive
time) Resolution = 12 bits approximation 1/fADC
= 14 to 173
Laps of time allowed
between two
tIDLE - - - 100 µs
conversions without
rearm
fs = 2.5 MSps - 410 -
ADC consumption
IDDA(ADC) fs = 1 MSps - 164 - µA
from VDDA
fs = 10 kSps - 17 -
fs = 2.5 MSps - 65 -
ADC consumption
IDDV(ADC) fs = 1 MSps - 26 - µA
from VREF+
fs = 10 kSps - 0.26 -
1. Specified by design. Not tested in production.
2. I/O analog switch voltage booster must be enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and
disabled when VDDA ≥ 2.4 V.
3. This requirement is granted when the incoming clock (PCLK or ADC asynchronous clock) is divided by two or more in the
ADC. For other cases, refer to the reference manual section ADC clock for information on how to fulfill this requirement.
4. VREF+ is internally connected to VDDA on some packages.Refer to Section 4: Pinouts, pin description and alternate
functions for further details.

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Table 57. Maximum ADC RAIN .

Sampling time at 35 MHz Max. RAIN(1)(2)
Resolution Sampling cycle at 35 MHz
[ns] (Ω)

1.5 43 50
3.5 100 680
7.5 214 2200
12.5 357 4700
12 bits
19.5 557 8200
39.5 1129 15000
79.5 2271 33000
160.5 4586 50000
1.5 43 68
3.5 100 820
7.5 214 3300
12.5 357 5600
10 bits
19.5 557 10000
39.5 1129 22000
79.5 2271 39000
160.5 4586 50000
1.5 43 82
3.5 100 1500
7.5 214 3900
12.5 357 6800
8 bits
19.5 557 12000
39.5 1129 27000
79.5 2271 50000
160.5 4586 50000
1.5 43 390
3.5 100 2200
7.5 214 5600
12.5 357 10000
6 bits
19.5 557 15000
39.5 1129 33000
79.5 2271 50000
160.5 4586 50000
1. Specified by design. Not tested in production.
2. I/O analog switch voltage booster must be enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and
disabled when VDDA ≥ 2.4 V.

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Table 58. ADC accuracy(1)(2)(3)

Symbol Parameter Conditions(4) Min Typ Max Unit

Total VDDA=VREF+ < 3.6 V;

ET unadjusted fADC = 35 MHz; fs ≤ 2.5 MSps; - 3 6.5 LSB
error TA = entire range
VDDA=VREF+ < 3.6 V;
EO Offset error fADC = 35 MHz; fs ≤ 2.5 MSps; - 1.5 4.5 LSB
TA = entire range
VDDA=VREF+ < 3.6 V;
EG Gain error fADC = 35 MHz; fs ≤ 2.5 MSps; - 3 5 LSB
TA = entire range
VDDA=VREF+ < 3.6 V;
Differential
ED fADC = 35 MHz; fs ≤ 2.5 MSps; - 1.2 1.5 LSB
linearity error
TA = entire range
VDDA=VREF+ < 3.6 V;
Integral linearity
EL fADC = 35 MHz; fs ≤ 2.5 MSps; - 2.5 3 LSB
error
TA = entire range
VDDA=VREF+ < 3.6 V;
Effective
ENOB fADC = 35 MHz; fs ≤ 2.5 MSps; 9.6 10.2 - bit
number of bits
TA = entire range
Signal-to-noise VDDA=VREF+ < 3.6 V;
SINAD and distortion fADC = 35 MHz; fs ≤ 2.5 MSps; 59.5 63 - dB
ratio TA = entire range
VDDA=VREF+ < 3.6 V;
Signal-to-noise
SNR fADC = 35 MHz; fs ≤ 2.5 MSps; 60 64 - dB
ratio
TA = entire range
VDDA=VREF+ < 3.6 V;
Total harmonic
THD fADC = 35 MHz; fs ≤ 2.5 MSps; - -74 -70 dB
distortion
TA = entire range
1. Based on characterization results, not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. Injecting negative current on any analog input pin significantly reduces the accuracy of A-to-D conversion
of signal on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins
susceptible to receive negative current.
4. I/O analog switch voltage booster enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V
and disabled when VDDA ≥ 2.4 V.

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Figure 20. ADC accuracy characteristics

VREF+ VDDA
[1LSB = (or )]
Output code 2n 2n
EG
(1) Example of an actual transfer curve
2n-1 (2) Ideal transfer curve
2n-2 (3) End-point correlation line
2n-3 (2)
n = ADC resolution
ET = total unadjusted error: maximum deviation
(3) between the actual and ideal transfer curves
ET
7 (1) EO = offset error: maximum deviation between the first
actual transition and the first ideal one
6
EL EG = gain error: deviation between the last ideal
5 EO
transition and the last actual one
4 ED = differential linearity error: maximum deviation
ED between actual steps and the ideal one
3
2 EL = integral linearity error: maximum deviation between
1 any actual transition and the end point correlation line
1 LSB ideal
0 VREF+ (VDDA)
(1/2n)*VREF+
(2/2n)*VREF+
(3/2n)*VREF+
(4/2n)*VREF+
(5/2n)*VREF+
(6/2n)*VREF+
(7/2n)*VREF+

(2n-3/2n)*VREF+
(2n-2/2n)*VREF+
(2n-1/2n)*VREF+
(2n/2n)*VREF+
VSSA

MSv19880V6

Figure 21. ADC typical connection diagram

VDDA(4) VREF+(4)

I/O Sample-and-hold ADC converter

analog
RAIN(1) switch RADC
Converter
(2)
Cparasitic Ilkg(3) CADC
VAIN Sampling
switch with
multiplexing

VSS VSS VSSA

MSv67871V3

1. Refer to Table 56: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 48: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 48: I/O static characteristics for the values of Ilkg.
4. Refer to Figure 9: Power supply scheme.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 9: Power supply scheme.
The 100 nF capacitor should be ceramic (good quality) and it should be placed as close as
possible to the chip.

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5.3.19 Temperature sensor characteristics

Table 59. TS characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VTS linearity with temperature - ±1 ±2 °C

(2)
Avg_Slope Average slope 2.3 2.5 2.7 mV/°C
V30 Voltage at 30°C (±5 °C)(3) 0.742 0.76 0.785 V

tSTART(TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4) - 8 15 µs

tSTART(1) Start-up time when entering in continuous mode(4) - 70 120 µs

tS_temp(1) ADC sampling time when reading the temperature 5 - - µs

Temperature sensor consumption from VDD, when

IDD(TS)(1) - 4.7 7 µA
selected by ADC
1. Specified by design. Not tested in production.
2. Based on characterization results, not tested in production.
3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte.
4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.

5.3.20 VBAT monitoring characteristics

Table 60. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 39 - kΩ

Q Ratio on VBAT measurement - 3 - -
(1)
Er Error on Q -10 - 10 %
tS_vbat(1) ADC sampling time when reading the VBAT 12 - - µs
1. Specified by design. Not tested in production.

Table 61. VBAT charging characteristics

Symbol Parameter Conditions Min Typ Max Unit

Battery VBRS = 0 - 5 -
RBC charging kΩ
resistor VBRS = 1 - 1.5 -

5.3.21 Timer characteristics

The parameters given in the following tables are specified by design and not tested in
production. Refer to Section 5.3.14: I/O port characteristics for details on the input/output
alternate function characteristics (output compare, input capture, external clock, PWM
output).

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Table 62. TIMx(1) characteristics

Symbol Parameter Conditions Min Max Unit

- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 64 MHz 15.625 - ns

Timer external clock frequency - 0 fTIMxCLK/2

fEXT MHz
on CH1 to CH4 fTIMxCLK = 64 MHz 0 40

ResTIM Timer resolution TIMx - 16

bit
- 1 65536 tTIMxCLK
tCOUNTER 16-bit counter clock period
fTIMxCLK = 64 MHz 0.015625 1024 µs

Maximum possible count with - - 65536 × 65536 tTIMxCLK

tMAX_COUNT
32-bit counter fTIMxCLK = 64 MHz - 67.10 s
1. TIMx is used as a general term to refer to a timer (for example, TIM1).

Table 63. IWDG min/max timeout period at 32 kHz LSI clock(1)

Prescaler divider PR[2:0] bits Min timeout RL[11:0]= 0x000 Max timeout RL[11:0]= 0xFFF Unit

/4 0 0.125 512
/8 1 0.250 1024
/16 2 0.500 2048
/32 3 1.0 4096 ms
/64 4 2.0 8192
/128 5 4.0 16384
/256 6 or 7 8.0 32768
1. The exact timings further depend on the phase of the APB interface clock versus the LSI clock, which causes an
uncertainty of one RC period.

5.3.22 Characteristics of communication interfaces

I2C-bus interface characteristics
The I2C-bus interface meets timing requirements of the I2C-bus specification and user
manual rev. 03 for:
• Standard-mode (Sm): with a bit rate up to 100 kbit/s
• Fast-mode (Fm): with a bit rate up to 400 kbit/s
• Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The timings are ensured by design as long as the I2C peripheral is properly configured
(refer to the reference manual RM0454) and when the I2CCLK frequency is greater than the
minimum shown in the following table.

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Table 64. Minimum I2CCLK frequency

Symbol Parameter Condition Typ Unit

Standard-mode 2
Analog filter enabled
9
DNF = 0
Fast-mode
Minimum I2CCLK Analog filter disabled
frequency for correct 9
fI2CCLK(min) DNF = 1 MHz
operation of I2C
peripheral Analog filter enabled
18
DNF = 0
Fast-mode Plus
Analog filter disabled
16
DNF = 1

The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDDIO1 is disabled, but is still present. Only FT_f I/O pins
support Fm+ low-level output current maximum requirement. Refer to Section 5.3.14: I/O
port characteristics for the I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the following table for its
characteristics:

Table 65. I2C analog filter characteristics(1)

Symbol Parameter Min Max Unit

Limiting duration of spikes suppressed

tAF 50 260 ns
by the filter(2)
1. Based on characterization results, not tested in production.
2. Spikes shorter than the limiting duration are suppressed.

SPI/I2S characteristics
Unless otherwise specified, the parameters given in Table 66 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 21: General operating conditions. The additional general conditions
are:
• OSPEEDRy[1:0] set to 11 (output speed)
• capacitive load C = 30 pF
• measurement points at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).

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Table 66. SPI characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Master mode
VDD(min) < VDD < 3.6 V 32
Range 1
Master transmitter
VDD(min) < VDD < 3.6 V 32
Range 1
Slave receiver
VDD(min) < VDD < 3.6 V 32
fSCK Range 1
SPI clock frequency - - MHz
1/tc(SCK)
Slave transmitter/full duplex
2.7 < VDD < 3.6 V 32
Range 1
Slave transmitter/full duplex
VDD(min) < VDD < 3.6 V 25
Range 1
VDD(min) < VDD < 3.6 V
8
Range 2
tsu(NSS) NSS setup time Slave mode, SPI prescaler = 2 4 ₓ TPCLK - - ns
th(NSS) NSS hold time Slave mode, SPI prescaler = 2 2 ₓ TPCLK - - ns
TPCLK TPCLK
tw(SCKH) SCK high time Master mode TPCLK ns
- 1.5 +1
TPCLK TPCLK
tw(SCKL) SCK low time Master mode TPCLK ns
- 1.5 +1
Master data input setup
tsu(MI) - 1 - - ns
time
Slave data input setup
tsu(SI) - 3 - - ns
time
Master data input hold
th(MI) - 5 - - ns
time
Slave data input hold
th(SI) - 2 - - ns
time
ta(SO) Data output access time Slave mode 9 - 34 ns
tdis(SO) Data output disable time Slave mode 9 - 16 ns
2.7 < VDD < 3.6 V
- 9 12
Range 1
Slave data output valid VDD(min) < VDD < 3.6 V
tv(SO) - 9 19.5 ns
time Range 1
VDD(min) < VDD < 3.6 V
- 11 24
Voltage Range 2
Master data output valid
tv(MO) - - 3 5 ns
time

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Table 66. SPI characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Slave data output hold

th(SO) - 5 - - ns
time
Master data output hold
th(MO) - 1 - - ns
time
1. Based on characterization results, not tested in production.

Figure 22. SPI timing diagram - slave mode and CPHA = 0

NSS input

tc(SCK) th(NSS)

tsu(NSS) tw(SCKH)
CPHA=0
SCK input

CPOL=0

CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41658V2

Figure 23. SPI timing diagram - slave mode and CPHA = 1

NSS input

tc(SCK) th(NSS)
tsu(NSS) tw(SCKH)
CPHA=1
SCK input

CPOL=0

CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41659V2

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Figure 24. SPI timing diagram - master mode

High

NSS input
tc(SCK)
tw(SCKH)
CPHA=0
SCK output

CPOL=0

CPHA=0
CPOL=1
tw(SCKL)
CPHA=1
SCK output

CPOL=0

CPHA=1
CPOL=1
tsu(MI) th(MI)

MISO input First bit IN Next bits IN Last bit IN

MOSI output First bit OUT Next bits OUT Last bit OUT

tv(MO) th(MO)
MSv72626V1

Table 67. I2S characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK= 256 x Fs; (Fs = audio sampling

fMCK I2S main clock output frequency) 2.048 49.152 MHz
Fsmin = 8 kHz; Fsmax = 192 kHz;
Master data - 64xFs
fCK I2S clock frequency MHz
Slave data - 64xFs

I2S clock frequency duty

DCK Slave receiver 30 70 %
cycle

tv(WS) WS valid time Master mode - 6 ns

th(WS) WS hold time Master mode 3 - ns

tsu(WS) WS setup time Slave mode 3 - ns

th(WS) WS hold time Slave mode 2 - ns

tsu(SD_MR) Master receiver 4 - ns
Data input setup time
tsu(SD_SR) Slave receiver 5 - ns
th(SD_MR) Master receiver 4.5 - ns
Data input hold time
th(SD_SR) Slave receiver 2 - ns

after enable edge; 2.7 < VDD < 3.6V 10

Data output valid time -
tv(SD_ST) - ns
slave transmitter after enable edge;
15
VDD(min) < VDD < 3.6V

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Table 67. I2S characteristics(1) (continued)

Symbol Parameter Conditions Min Max Unit

Data output valid time -

tv(SD_MT) after enable edge - 5.5 ns
master transmitter
Data output hold time -
th(SD_ST) after enable edge 7 - ns
slave transmitter
Data output hold time -
th(SD_MT) after enable edge 1 - ns
master transmitter
1. Based on characterization results, not tested in production.

Figure 25. I2S slave timing diagram (Philips protocol)

tc(CK)

CPOL = 0
CK Input

CPOL = 1

tw(CKH) tw(CKL) th(WS)

WS input

tsu(WS) tv(SD_ST) th(SD_ST)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit

tsu(SD_SR) th(SD_SR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

MSv39721V1

1. Measurement points are done at CMOS levels: 0.3 VDDIO1 and 0.7 VDDIO1.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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Figure 26. I2S master timing diagram (Philips protocol)

90%
10%
tf(CK) tr(CK)

tc(CK)
CK output

CPOL = 0
tw(CKH)

CPOL = 1
tv(WS) tw(CKL) th(WS)

WS output

tv(SD_MT) th(SD_MT)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_MR) th(SD_MR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

MSv39720V1

1. Based on characterization results, not tested in production.

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

USART (SPI mode) characteristics

Unless otherwise specified, the parameters given in Table 68 for USART are derived from
tests performed under the ambient temperature, fPCLKx frequency and supply voltage
conditions summarized in Table 21: General operating conditions. The additional general
conditions are:
• OSPEEDRy[1:0] set to 10 (output speed)
• capacitive load C = 30 pF
• measurement points at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, CK, TX, and RX for USART).

Table 68. USART characteristics in SPI mode

Symbol Parameter Conditions Min Typ Max Unit

Master mode - - 8
fCK USART clock frequency MHz
Slave mode - - 21
tsu(NSS) NSS setup time Slave mode Tker(1) + 2 - - ns
th(NSS) NSS hold time Slave mode 2 - - ns

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Table 68. USART characteristics in SPI mode

Symbol Parameter Conditions Min Typ Max Unit

tw(CKH) CK high time 1 / fCK / 2 1 / fCK / 2 ns

Master mode 1 / fCK / 2
tw(CKL) CK low time -1 +1 ns
Master mode Tker (1)
+2 - - ns
tsu(RX) Data input setup time
Slave mode 3 - - ns
Master mode 2 - - ns
th(RX) Data input hold time
Slave mode 1 - - ns
Master mode - 1 2 ns
tv(TX) Data output valid time
Slave mode - 10 19 ns
Master mode 0 - - ns
th(TX) Data output hold time
Slave mode 7 - - ns
1. Tker is the usart_ker_ck_pres clock period

Figure 27. USART timing diagram in SPI master mode

1/fCK
tw(CKH)
CPHA=0
CK output

CPOL=0

CPHA=0
CPOL=1
tw(CKL)
CPHA=1
CK output

CPOL=0

CPHA=1
CPOL=1
tsu(RX) th(RX)

RX input MSB IN BIT6 IN LSB IN

TX output MSB OUT BIT1 OUT LSB OUT

tv(TX) th(TX) MSv65386V6

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Figure 28. USART timing diagram in SPI slave mode

NSS input

1/fCK th(NSS)

tsu(NSS) tw(CKH)
CPHA=0
CPOL=0
CK input

CPHA=0
CPOL=1
tw(CKL) tv(TX) th(TX)

TX output First bit OUT Next bits OUT Last bit OUT

tsu(RX) th(RX)

RX input First bit IN Next bits IN Last bit IN

MSv65387V6

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6 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

6.1 Device marking

Refer to technical note “Reference device marking schematics for STM32 microcontrollers
and microprocessors” (TN1433) available on www.st.com, for the location of pin 1 / ball A1
as well as the location and orientation of the marking areas versus pin 1 / ball A1.
Parts marked as “ES”, “E” or accompanied by an engineering sample notification letter, are
not yet qualified and therefore not approved for use in production. ST is not responsible for
any consequences resulting from such use. In no event will ST be liable for the customer
using any of these engineering samples in production. ST’s Quality department must be
contacted prior to any decision to use these engineering samples to run a qualification
activity.
A WLCSP simplified marking example (if any) is provided in the corresponding package
information subsection.

6.2 SO8N package information (O7)

This SO8N is an 8-lead, 4.9 x 6 mm, plastic small outline, 150 mils body width, package.

Figure 29. SO8N -Outline

K[Û

A2 A B
c
B
b ccc
e

0.25 mm
D SEATING GAUGE PLANE
PLANE
C k
8
E1 E
1 L
A1
L1
O7_SO8_ME_V3

1. Drawing is not to scale.

Table 69. SO8N -Mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 1.750 - - 0.0689
A1 0.100 - 0.250 0.0039 - 0.0098

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Table 69. SO8N -Mechanical data (continued)

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A2 1.250 - - 0.0492 - -
b 0.280 - 0.480 0.0110 - 0.0189
c 0.100 - 0.230 0.0039 - 0.0091
(2)
D 4.800 4.900 5.000 0.1890 0.1929 0.1969
E 5.800 6.000 6.200 0.2283 0.2362 0.2441
E1(3) 3.800 3.900 4.000 0.1496 0.1535 0.1575
e - 1.270 - - 0.0500 -
h 0.250 - 0.500 0.0098 - 0.0197
k 0° - 8° 0° - 8°
L 0.400 - 1.270 0.0157 - 0.0500
L1 - 1.040 - - 0.0409 -
ccc - - 0.100 - - 0.0039
1. Values in inches are converted from mm and rounded to four decimal digits.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusions or gate burrs shall not exceed 0.15mm per side
3. Dimension “E1” does not include interlead flash or protrusions.
Interlead flash or protrusions shall not exceed 0.25 mm per side.

Note: The package top may be smaller than the package bottom. Dimensions D and E1 are
determinated at the outermost extremes of the plastic body exclusive of mold flash, tie bar
burrs, gate burrs and interleads flash, but including any mismatch between the top and
bottom of plastic body. Measurement side for mold flash, protusions or gate burrs is bottom
side.

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STM32G030x6/x8 Package information

Figure 30. SO8N - Footprint example

0.6 (x8)

3.9
6.7
1.27
O7_FP_V1

1. Dimensions are expressed in millimeters.

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6.3 TSSOP20 package information (YA)

TSSOP20 is a 20-lead, 6.5 x 4.4 mm thin small-outline package with 0.65 mm pitch.

Figure 31. TSSOP20 – Outline

20 11
c

E1 E
SEATING 0.25 mm
PLANE GAUGE PLANE
C
1 10

PIN 1
IDENTIFICATION
k
aaa C A1 L
A A2
L1

b e

YA_ME_V3

1. Drawing is not to scale.

Table 70. TSSOP20 – Mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 1.200 - - 0.0472
A1 0.050 - 0.150 0.0020 - 0.0059
A2 0.800 1.000 1.050 0.0315 0.0394 0.0413
b 0.190 - 0.300 0.0075 - 0.0118
c 0.090 - 0.200 0.0035 - 0.0079
D(2) 6.400 6.500 6.600 0.2520 0.2559 0.2598
E 6.200 6.400 6.600 0.2441 0.2520 0.2598
E1(3) 4.300 4.400 4.500 0.1693 0.1732 0.1772
e - 0.650 - - 0.0256 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° - 8° 0° - 8°
aaa - - 0.100 - - 0.0039
1. Values in inches are converted from mm and rounded to four decimal digits.
2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm per side.
3. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.

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Figure 32. TSSOP20 – Footprint example

0.25
6.25
20 11

1.35

0.25

7.10 4.40

1.35

1 10

0.40 0.65 YA_FP_V1

1. Dimensions are expressed in millimeters.

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6.4 LQFP32 package information (5V)

This LQFP is a 32-pin, 7 x 7 mm, low-profile quad flat package.
Note: Figure 33 is not to scale.
Refer to the notes section for the list of notes on Figure 33 and Table 71.

Figure 33. LQFP32 - Outline

BOTTOM VIEW

2 1
(2)
(6) R1

D 1/4 H
R2

B
B-
N
O
TI
E 1/4

C
SE
B GAUGE PLANE
4x N/4 TIPS

0.25
aaa C A-B D bbb H A-B D 4x S
N B
L
3
(L1)
(1) (11)

SECTION A-A

(N – 4)x e (13)

C
A

A2 A1 b ddd C A-B D
0.05 (12) ccc C

D (4)
(9) (11)
(2) (5)
b WITH PLATING
D1
D (3)
(10)

(11) c
1
c1(11)
2 E 1/4
(3) A B
3
D 1/4
E1 E b1 BASE METAL
(6) (2) (4) (11)
(3) (5)

A A SECTION B-B
(Section A-A)

TOP VIEW 5V_LQFP32_ME_V1

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Table 71. LQFP32 - Mechanical data

millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b(9)(11) 0.30 0.37 0.45 0.0118 0.0146 0.0177
(11)
b1 0.30 0.35 0.40 0.0118 0.0128 0.0157
c(11) 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 9.00 BSC 0.3543 BSC
D1(2)(5) 7.00 BSC 0.2756 BSC
e 0.80 BSC 0.0315 BSC
E(4) 9.00 BSC 0.3543 BSC
E1(2)(5) 7.00 BSC 0.2756 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 32
R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1)(7)(15) 0.20 0.0079
(1)(7)(15)
bbb 0.20 0.0079
ccc(1)(7)(15) 0.10 0.0039
(1)(7)(15)
ddd 0.20 0.0079

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at the seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All dimensions are in millimeters.
8. No intrusion is allowed inwards the leads.
9. Dimension b does not include a dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. The minimum space
between the protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch
packages.
10. The exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. N is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to four decimal digits.
15. Recommended values and tolerances.

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Figure 34. LQFP32 – Footprint example

0.45 0.8

32 25
1.2 REF
1 24

7.4

9.8
8 17

9 16

7.4

9.8

Soldering area

Solder resist opening

5V_LQFP32_FP_V4

1. Dimensions are expressed in millimeters.

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6.5 LQFP48 package information (5B)

This LQFP is a 48-pin, 7 x 7 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 35. LQFP48 - Outline(15)

BOTTOM VIEW

4x N/4 TIPS
aaa C A-B D
2 1
(2)
R1

H
R2

B
B-
D 1/4

N
O
(6)

TI
C
SE
B GAUGE PLANE
E 1/4

0.25
S
B
bbb H A-B D 4x
L
3
(13) (L1)
0.05 (N – 4)x e (1) (11)

A A2 C SECTION A-A

(12) ccc C
A1 ddd C A-B D
b
D (4)
(2) (5)
D1
(10) D (3) (9) (11)
N b WITH PLATING

1
2 E 1/4
(3) A 3
(6) B (3)
D 1/4 c c1
E1 E (11) (11)
(2) (4)
(5)
A A b1 BASE METAL
(Section A-A) (11)

SECTION B-B

TOP VIEW

5B_LQFP48_ME_V1

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Table 72. LQFP48 - Mechanical data

millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 9.00 BSC 0.3543 BSC
(2)(5)
D1 7.00 BSC 0.2756 BSC
E(4) 9.00 BSC 0.3543 BSC
E1(2)(5) 7.00 BSC 0.2756 BSC
e 0.50 BSC 0.1970 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 48
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°

R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1)(7) 0.20 0.0079
(1)(7)
bbb 0.20 0.0079
ccc(1)(7) 0.08 0.0031
(1)(7)
ddd 0.08 0.0031

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Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 36. LQFP48 - Footprint example

0.50
1.20

36 25
37 24 0.30

0.20

9.70 7.30

48 13
1 12

5.80

9.70
5B_LQFP48_FP_V1

1. Dimensions are expressed in millimeters.

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6.6 Thermal characteristics

The operating junction temperature TJ must never exceed the maximum given in
Table 21: General operating conditions
The maximum junction temperature in °C that the device can reach if respecting the
operating conditions, is:
TJ(max) = TA(max) + PD(max) x ΘJA
where:
• TA(max) is the maximum operating ambient temperature in °C,
• ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
• PD = PINT + PI/O,
– PINT is power dissipation contribution from product of IDD and VDD
– PI/O is power dissipation contribution from output ports where:
PI/O = Σ (VOL × IOL) + Σ ((VDDIO1 – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high
level in the application.

Table 73. Package thermal characteristics

Symbol Parameter Package Value Unit

SO8N 4.9 × 6 mm 134

Thermal resistance TSSOP20 6.4 × 4.4 mm 88

ΘJA °C/W
junction-ambient LQFP32 7 × 7 mm 84

LQFP48 7 × 7 mm 84

SO8N 4.9 × 6 mm 86

Thermal resistance TSSOP20 6.4 × 4.4 mm 57

ΘJB °C/W
junction-board LQFP32 7 × 7 mm 76

LQFP48 7 × 7 mm 76

SO8N 4.9 × 6 mm 30

Thermal resistance TSSOP20 6.4 × 4.4 mm 19

ΘJC °C/W
junction-board LQFP32 7 × 7 mm 42

LQFP48 7 × 7 mm 42

6.6.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (still air). Available from www.jedec.org.

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Ordering information STM32G030x6/x8

7 Ordering information

Example STM32 G 030 K 8 T 6 xyy

Device family
STM32 = Arm® based 32-bit microcontroller

Product type
G = general-purpose

Device subfamily
030 = STM32G030

Pin count
J=8
F = 20
K = 32
C = 48

Flash memory size

6 = 32 Kbytes
8 = 64 Kbytes

Package type
T = LQFP
P = TSSOP
M = SO˽N

Temperature range
6 = -40 to 85°C (105°C junction)

Options
˽TR = tape and reel packing
˽˽˽ = tray packing
other = 3-character ID incl. custom Flash code and packing information

For a list of available options (memory, package, and so on) or for further information on any
aspect of this device, contact your nearest ST sales office.

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STM32G030x6/x8 Important security notice

8 Important security notice

The STMicroelectronics group of companies (ST) places a high value on product security,
which is why the ST product(s) identified in this documentation may be certified by various
security certification bodies and/or may implement our own security measures as set forth
herein. However, no level of security certification and/or built-in security measures can
guarantee that ST products are resistant to all forms of attacks. As such, it is the
responsibility of each of ST's customers to determine if the level of security provided in an
ST product meets the customer needs both in relation to the ST product alone, as well as
when combined with other components and/or software for the customer end product or
application. In particular, take note that:
• ST products may have been certified by one or more security certification bodies, such
as Platform Security Architecture (www.psacertified.org) and/or Security Evaluation
standard for IoT Platforms (www.trustcb.com). For details concerning whether the ST
product(s) referenced herein have received security certification along with the level
and current status of such certification, either visit the relevant certification standards
website or go to the relevant product page on www.st.com for the most up to date
information. As the status and/or level of security certification for an ST product can
change from time to time, customers should re-check security certification status/level
as needed. If an ST product is not shown to be certified under a particular security
standard, customers should not assume it is certified.
• Certification bodies have the right to evaluate, grant and revoke security certification in
relation to ST products. These certification bodies are therefore independently
responsible for granting or revoking security certification for an ST product, and ST
does not take any responsibility for mistakes, evaluations, assessments, testing, or
other activity carried out by the certification body with respect to any ST product.
• Industry-based cryptographic algorithms (such as AES, DES, or MD5) and other open
standard technologies which may be used in conjunction with an ST product are based
on standards which were not developed by ST. ST does not take responsibility for any
flaws in such cryptographic algorithms or open technologies or for any methods which
have been or may be developed to bypass, decrypt or crack such algorithms or
technologies.
• While robust security testing may be done, no level of certification can absolutely
guarantee protections against all attacks, including, for example, against advanced
attacks which have not been tested for, against new or unidentified forms of attack, or
against any form of attack when using an ST product outside of its specification or
intended use, or in conjunction with other components or software which are used by
customer to create their end product or application. ST is not responsible for resistance
against such attacks. As such, regardless of the incorporated security features and/or
any information or support that may be provided by ST, each customer is solely
responsible for determining if the level of attacks tested for meets their needs, both in
relation to the ST product alone and when incorporated into a customer end product or
application.
• All security features of ST products (inclusive of any hardware, software,
documentation, and the like), including but not limited to any enhanced security
features added by ST, are provided on an "AS IS" BASIS. AS SUCH, TO THE EXTENT
PERMITTED BY APPLICABLE LAW, ST DISCLAIMS ALL WARRANTIES, EXPRESS
OR IMPLIED, INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF
MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, unless the
applicable written and signed contract terms specifically provide otherwise.

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Revision history STM32G030x6/x8

9 Revision history

Table 74. Document revision history

Date Revision Changes

26-Jun-2019 1 Initial release

Added Section 3.12: DMA request multiplexer (DMAMUX).
Corrected figures with package marking examples.
09-Dec-2019 2 Corrected I/O numbers in Table 2: STM32G030x6/x8 family device features and
peripheral counts.
Added I/O types in Table 12: Pin assignment and description.
Cover page updated;
Section 2: Description updated;
22-Apr-2020 3 Table 18: Voltage characteristics updated;
Table 19: Current characteristics: Note 2 removed;
Table 56: ADC characteristics: major update.
Footnote of Table 12: Pin assignment and description updated;
VESD(HBM) updated in Table 45: ESD absolute maximum ratings;
20-Jan-2022 4
Packages in Section 6: Package information re-ordered from lowest to highest
pin count.
Cover page updated.
Added Section 6.1: Device marking and removed per-package Device marking
sections.
Updated Figure 5.1.6: Power supply scheme.
Packages re-ordered from lowest to highest pin count in Section 4: Pinouts, pin
description and alternate functions.
Updated Section 6.6: Thermal characteristics;
Added Section 8: Important security notice.
In Section 2: Description, updated leading text, Table 2: STM32G030x6/x8 family
device features and peripheral counts, and Figure 1: Block diagram;
In Section 3: Functional overview, updated Section 3.3: Embedded flash
05-Jun-2025 5
memory: added information on OTP in Table 3: Access status versus readout
protection level and execution modes; updated Section 3.5: Boot modes,
Section 3.7: Power supply management and Figure 2: Power supply overview,
Section 3.14: Analog-to-digital converter (ADC), Section 3.15.1: Advanced-
control timer (TIM1).
In Section 4: Pinouts, pin description and alternate functions, package figures
updated and re-ordered from smallest to largest, updated Figure 3:
STM32G030Jx SO8N pinout, updated Table 11: Terms and symbols used in Pin
assignment and description table, updated information for pin NRST, PA0 through
PA2 in Table 12: Pin assignment and description.
In Section 5.2: Absolute maximum ratings, added information on mission profile
and updated Table 18: Voltage characteristics.

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STM32G030x6/x8 Revision history

Table 74. Document revision history (continued)

Date Revision Changes

In Section 5.3: Operating conditions, all table footnotes “Guaranteed by design”

changed to “Specified by design. Not tested in production”, updated Table 21:
General operating conditions, Table 23: Embedded reset and power control block
characteristics - corrected VPOR and VPDR values, Section : I/O system current
consumption, Table 44: EMI characteristics, Section : General input/output
characteristics (a note added), Table 50: Output voltage characteristics, title
change for Section : Output buffer timing characteristics and Table 51: Non-FT_c
I/O output timing characteristics, added Table 52: FT_c I/O output timing
characteristics, updated Figure 18: I/O AC characteristics definition, Figure 19:
Recommended NRST pin protection, added Section 5.3.16: Extended interrupt
5 and event controller input (EXTI) characteristics, updated Table 56: ADC
05-Jun-2025 characteristics, Table 58: ADC accuracy, Figure 20: ADC accuracy
(cont’d)
characteristics, Figure 21: ADC typical connection diagram, Figure 22: SPI timing
diagram - slave mode and CPHA = 0, Figure 23: SPI timing diagram - slave mode
and CPHA = 1, Figure 24: SPI timing diagram - master mode, title of Section :
USART (SPI mode) characteristics and Table 68: USART characteristics in SPI
mode, added Figure 27: USART timing diagram in SPI master mode and
Figure 28: USART timing diagram in SPI slave mode.
Updated Section 6: Package information, with added Section 6.1: Device
marking, and removed corresponding subsections for all packages.
Updated Table 73: Package thermal characteristics.
Added Section 8: Important security notice.
Update of Table 2: STM32G030x6/x8 family device features and peripheral
20-Jun-2025 6 counts, Table 47: I/O current injection susceptibility, and Table 48: I/O static
characteristics.

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 STM32G030x6/x8

IMPORTANT NOTICE – READ CAREFULLY

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100/100 DS12991 Rev 6