Power Semi-Conductor Devices

Properties of ideal switch

1. Conduction state , VON  0,    ION  

2. Blocking state , VOFF  0,    VOFF  
3. Ideal switch can change its state instantaneously TON  0 , TOFF  0
4. No power loss while switching.
5. Stable under all operating conditions.

Classification of switches

1. Uncontrolled switch (Passive switch)

Switching state cannot be controlled by any control signal E.g. Diode

2. Semi-controlled switch

Only one switching state can be controlled by an external control signal. E.g. SCR

3. Fully controlled switch

If both switching states can be controlled by switchable control signal. E.g. BJT, MOSFET.

Other Classification

1. Unipolar switch

The switch can block only one polarity of voltage when it is in OFF state.

2. Bipolar switch

This switch can block both polarity of voltage when it is in blocking state.

3. Unidirectional switch

This switch can carry current in only one direction when it is in conduction state.

4. Bidirectional switch

This switch can carry current in both the directions when it is in conduction state.
Power loss in a switch

1) The average power has in a switch is given by

1 T
P   vidt
T o
Where v = instantaneous voltage
i = instantaneous current

2) If the device is modeled as a resistance, as in case of a MOSFET

P  Irms
2
R ON  Vrms
2
R ON
3) If the device is modeled as a voltage source.
P  V Iavg

Silicon Controlled Rectifier

 In forward blocking mode, J1 , J3 are forward biased and J2 is reverse biased.

 In forward conduction mode, J2 breakdown, J1 , J3 are forward biased.
 In reverse blocking mode, J1 , J3 are reverse biased & J2 is forward biased.

Latching Current

This is the minimum value of anode current above which SCR turns ON. This is related to
minimum gate pulse width requirement for SCR.

Holding current

Minimum value of anode current below which SCR turns OFF.

  di 
Slope of characteristics =  
 dt 
If ta  trr
Area under the curve = QR
1
QR  IRM trr
2


IRM  di dt trr
1 di 2
QR 
2 dt
 trr 
Device & Circuit Turn-off time
 Device turn off time, tq  trr  tgr
trr = reverse recovery time
t gr = gate recovery time
 Circuit turn-off time  t c  is the time period for which communication circuit applies reverse
voltage across SCR after anode current becomes zero.
 For successful communication, tc  tq

Turn-ON methods of SCR

1) Forward voltage triggering

If VAK  VBO , then J2 breakdown & SCR conducts. This can damage the SCR.

dV
2) Triggering
dt
dv dv
Ic  C j , if is high, charging current increase and SCR conducts when Ic  Ilatching .
dt dt

3) Light Triggering
If light is incident on J2 , charge carriers are generated and J2 starts conducting.

4) Thermal Triggering
When temperature is increased then charge carriers are generated & SCR conducts.

5) Gate Triggering
By applying gate pulse in SCR, VBO is lowered and SCR can easily conduct.
 Static V-I characteristics of SCR

Communication of thyristor

Communication is defined as process of turning OFF the thyristor.

Types of Commutations:

1. Natural or line communication

In this case nature of supply supports the commutation.

E.g. Rectifier, AC voltage controllers, Step-down cyclo-converters.

2. Forced Commutation

1) Class A commutation

 Circuit should be under-damped.

4L
 R2  for damped oscillations.
C

1 R2
 Ringing frequency, r   2
LC 4L


 Thyristor conducts for a period of =
r
2) Class-B commutation or current commutation

a)  ITM peak  Io
C
b)  ITA peak  Vs
L
 IP

c) Time required to turn OFF TM after TA ON

I 
  LC  LC sin1  o 
 Ip 
 
d) Conduction time of TA   LC
CVR
e) tCM  = circuit turn off time
Io
 I  
Where VR  VS cos sin1  o  
 Ip
   

Other Implementation

 I 
tCM     2 sin1  o   LC
  Ip
  

Rest all parameters remains same.

3) Class-C commutation or Impulse commutation

V 2V 
  I T1 peak  S  S 
 R1 R 2 

V 2V 
  I T2 peak  S  S 
 R 2 R1 

 tC1  R1 ln2 

 tC2  R 2 ln2 
 Class-D commutation or voltage commutation

C
  ITM peak  Io  VS L
  ITA peak  Io
  TON min for TM   LC

CVs
 tCM 
Io
2CVs
 Conduction time of TA  2tCM 
Io
VS
  VO avg   TON  2tCM  , T = Switching internal
T

Thermal Protection of SCR

 jc = Thermal resistance b/w J & C

CS = Thermal resistance b/w C & S

SA = Thermal resistance b/w S & A

Unit of   0 C / w

In electrical circuit representation

TjA = Temperature difference b/w J & A