Course 21PYB102J Course Course B BASIC SCIENCES L T P C

SEMICONDUCTOR PHYSICS AND COMPUTATIONAL METHODS Category

Code Name 3 1 2 5

Pre-requisite Co- requisite Progressive

Courses Nil Courses Nil Courses Nil
Course Offering Department Physics and Nano Technology Data Book / Codes / Standards Nil

Course Learning Rationale (CLR): The purpose of learning this course is to: Program Outcomes (PO)
CLR-1 : Introduce band gap and Fermi level in semiconductors and how to compute those properties 1 2 3 4 5 6 7 8 9 10 11 12
CLR-2 : Explain the concept of carrier transport mechanism in p-n and metal semiconductor junction

The engineer and society

Conduct investigations of

Individual & Team Work

Engineering Knowledge
CLR-3 : Provide an insight on semiconductor optical transitions and photovoltaic effect

Design/development of

Project Mgt. & Finance

Modern Tool Usage
CLR-4 : Procure knowledge of electrical and optical measurements in semiconductor and to instigate the concepts of TCAD

Life Long Learning

complex problems
Problem Analysis

Communication
Develop necessary skills for low dimensional semiconductor material processing and characterization and to introduce the

Environment &
CLR-5 :

Sustainability
basic of machine learning in image processing

solutions

Ethics
Course Outcomes (CO): At the end of this course, learners will be able to:
CO-1: Understand and compute energy band in solids and electron occupation probability 3 - - - - - - - - - - -
CO-2: Understand and analyze the working of optoelectronic devices 3 - - - - - - - - - - -
CO-3: Apply the knowledge to the development of new and novel optoelectronic devices - - 3 - - - - - - - - -
CO-4: Understand the working mechanism of electrical and optical measurements and gain the fundamentals of TCAD 3 - - - - - - - - - - -
Acquire knowledge of the low dimensional semiconductor material fabrication and characterization and gain insights of the - - - - - - - - -
CO-5: - 3 -
concepts of machine learning

Unit-1 : Energy Bands in Solids 18 Hour

Introduction to Classical Free electron theory-Introduction to Quantum Free electron theory-Density of states-Concepts-Energy band in solids-Kronig-Penney model--E-k diagram-Direct and Indirect band gap-Concept of
phonons-Concept of Brillouin Zone-Computational determination of Band Structure Concepts , Eigenvalue equations-Classification of electronic materials-Fermi level-Probability of occupation-Numerical determination of
probability of occupation and carrier concentration-Concept of Fermi surface of a metal-Computational determination of Fermi Surface of Cu as example.
Practice
1. Determination of Hall coefficient of Semiconductor material
2. Determination of Band Gap of semiconductor-Post Office Box method
Unit-2 : Carrier Transport Mechanism in Semiconductors 18 Hour
Intrinsic semiconductor-Dependence of Fermi level on carrier-concentration-and temperature in Intrinsic semiconductor-Extrinsic semiconductors-Dependence of Fermi level on carrier-concentration-and temperature in extrinsic
semiconductors-Explanation for carrier generation-Explanation for recombination processes -Carrier transport - diffusion and drift current-Continuity equation-p-n junction-Biasing concept in p-n junction-Metal-semiconductor
junction -Ohmic contact -Semiconductor materials of interest for optoelectronic devices-Photocurrent in a P-N junction diode- Light emitting diode- Classification of Light emitting diode-Optoelectronic integrated circuits-Organic
light emitting diodes
Practice
1. Determination of Band Gap of semiconductor-Four probe method
2. Study of I-V characteristics of a light dependent resistor (LDR)
3. Study of V-I and V-R characteristics , Efficiency of a solar cell
Unit-3: Optoelectronic Properties of Semiconductors 18 Hour
Concept of optical transitions in bulk semiconductor- Optical absorption process-Concept of recombination process-Optical recombination process-Explanation for spontaneous emission-Explanation for stimulated emission-
Joint density of states in semiconductor-Density of states for photons-Explanation of transition rates-Numerical computation of optical loss-Finite element method to calculate Photon density of states -Basic concepts of
Photovoltaic-Photovoltaic effect-Applications of Photovoltaic effect-Determination of efficiency of a PV cell-Computational approach to calculate optical excitations-Example: optical excitation in BN ( Boron nitride)
41
B.Tech/M.Tech(Integrated) Regulations 2021)- Volume-2-First Year Syllabi-Control copy
Practice
1. Characterization of pn junction diode (Forward and reverse bias)
2. Verify Inverse square law of light using a photo cell.
Unit-4 : Electrical And Optical Measurements 18 Hour
Concept of electrical measurements-Two point probe technique-Four point probe technique-linear method-Four point probe technique-Vander Pauw method-Significance of carrier density-Significance of resistivity and Hall
mobility-Hot-point probe measurement-Capacitance-voltage measurements-Extraction of parameters in a diode-I-V characteristics of a diode-Introduction of TCAD in basic level- Significance of band gap in semiconductors-
Concept of absorption and transmission-Boltzmann Transport Equation-Scattering Mechanisms-Monte Carlo method- Concept only-Example only Monte Carlo Methods for Solution of BTE( Boltzmann equation)
Practice
1. Determination of electron and hole mobility versus doping concentration using GNU Octave
2. Determination of Fermi function for different temperature using GNU Octave
3. Study of attenuation and propagation characteristic of optical fiber cable using laser source
Unit-5: Low Dimensional Semiconductor Materials 18 Hour
Density of states in 2D-Density of states in 1D and 0D-Introduction to low dimensional systems-Quantum well-Quantum wire and dots-Introduction to novel low dimensional systems -CNT- properties and synthesis-Applications
of CNT-Fabrication technique-CVD-Fabrication technique-PVD-Characterizations techniques for low dimensional systems-Principle of electron microscopy-Scanning electron microscopy-Transmission electron microscopy-
Atomic force microscope-Computational and machine learning approach for electron microscopy image processing Concepts, overview-Example of Graphene
Practice
1. Plotting and interpretation of I-V characteristics of Diode GNU Octave
2. Determination of lattice parameters using powder XRD
3. Mini Project.

-Hill Inc. 1995. 5. Computational Materials Science: An Introduction by June Gunn Lee, Chapter 7,
Learning Page 227- 230 (Quantum Espresso)and Page 300-307 (VASP)
Resources 6. Finite Element Method GouriDhatt, Emmanuel Lefrançois, Gilbert Touzot, Wiley
4. A. Yariv and P. University Press, New York 2007. Publication, ISBN: 978-1-848-21368-5

Learning Assessment
Continuous Learning Assessment (CLA)
Summative
Formative Life Long Learning
Final Examination
CLA-1 Average of unit test CLA-2
Level of Thinking (40% weightage)
(50%) (10%)
Theory Practice Theory Practice Theory Practice
Level 1 Remember 20% - - 10% 20% -
Level 2 Understand 20% - - 30% 20% -
Level 3 Apply 30% - - 20% 30% -
Level 4 Analyze 30% - - 40% 30% -
Level 5 Evaluate - - - - - -
Level 6 Create - - - - - -
Total 100 % 100 % 100 %

Course Designers
Experts from Industry Experts from Higher Technical Institutions Internal Experts
1. Dr. Vinay Kumar Gupta, National Physical Laboratory, [email protected] 1. Prof .C. Vijayan, IITM, Chennai, [email protected] 1. Dr. C. Preferencial Kala, SRMIST
2. Prof. S. Balakumar, Univ of Madras, [email protected] 2. Dr.S. Saurab Ghosh S, SRMIST

42
B.Tech/M.Tech(Integrated) Regulations 2021)- Volume-2-First Year Syllabi-Control copy