MMBF170

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID Max • Low On-Resistance
BVDSS RDS(ON) Max
TA = +25°C • Low Gate Threshold Voltage
• Low Input Capacitance
5.0Ω @ VGS = 10V 200mA
60V • Fast Switching Speed
5.3Ω @ VGS = 4.5V 190mA • Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
• An automotive-compliant part is available under separate
datasheet (MMBF170Q)

Description and Applications Mechanical Data

This MOSFET is designed to minimize the on-state resistance • Package: SOT23
(RDS(ON)) yet maintain superior switching performance, making it ideal • Package Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
for high-efficiency power-management applications.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
• Motor controls (Lead-Free Plating). Solderable per MIL-STD-202, Method 208
• Power-management functions • Terminal Connections: See Diagram
• Weight: 0.008 grams (Approximate)
D
SOT23 (Standard)

G
G S
S
Top View Equivalent Circuit Top View

Ordering Information (Note 4)

Packing
Part Number Package
Qty. Carrier
MMBF170-7-F SOT23 (Standard) 3,000 Tape & Reel
MMBF170-13-F SOT23 (Standard) 10,000 Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

K6Z = Product Type Marking Code

YM = Date Code Marking
Y or Y̅ or Y = Year (ex: L = 2024)
M or M = Month (ex: 9 = September)

Date Code Key

Year 2007 - 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033
Code U - L M N P R S T U V W
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MMBF170 1 of 5 July 2024
Document number: DS30104 Rev. 16 - 2 www.diodes.com © 2024 Copyright Diodes Incorporated. All Rights Reserved.
 MMBF170

Maximum Ratings (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V
Continuous ±20
Gate-Source Voltage VGSS V
Pulsed (Note 7) ±40
Continuous Drain Current (Note 5) ID 200 mA
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 800 mA

Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 300 mW
PD
Derating above TA = +25°C 1.80 mW/°C
Thermal Resistance, Junction to Ambient (Note 5) RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 70 — V VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS — — ±10 nA VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) 0.8 2.1 3.0 V VDS = VGS, ID = 250μA
— 2.2 5.0 VGS = 10V, ID = 200mA
Static Drain-Source On-Resistance RDS(ON) Ω
— 3.2 5.3 VGS = 4.5V, ID = 50mA
Forward Transconductance gFS 80 — — mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss — 22 40 pF
Output Capacitance Coss — 11 30 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss — 2 5 pF
Turn-On Delay Time tD(on) — — 10 ns VDD = 25V, ID = 0.5A
Turn-Off Delay Time tD(off) — — 10 ns VGS = 10V, RGEN = 50Ω
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout, which can be found on our website at www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.

MMBF170 2 of 5 July 2024

Document number: DS30104 Rev. 16 - 2 www.diodes.com © 2024 Copyright Diodes Incorporated. All Rights Reserved.
 MMBF170

1.0 7

6
ID, DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
0.8
5

RDS(ON), NORMALIZED
0.6
4

0.4 3

2
0.2
1

0 0
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Fig. 1 On-Region Characteristics Fig. 2 On-Resistance vs. Drain Current

2.0 6
DRAIN-SOURCE ON-RESISTANCE

DRAIN-SOURCE ON-RESISTANCE
5
1.5
RDS(ON), NORMALIZED

RDS(ON), NORMALIZED

1.0 3

2
0.5
1

0 0
-55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18
Tj, JUNCTION TEMPERATURE (°C) VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 3 On-Resistance vs. Junction Temperature Fig. 4 On-Resistance vs. Gate-Source Voltage

400

350
PD, POWER DISSIPATION (mW)

300

250

200

150

100

50

0
0 2550 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (蚓 (°C))
Fig. 5 Max Power Dissipation vs. Ambient Temperature

MMBF170 3 of 5 July 2024

Document number: DS30104 Rev. 16 - 2 www.diodes.com © 2024 Copyright Diodes Incorporated. All Rights Reserved.
 MMBF170

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23 (Standard)

D
GAUGE PLANE
0.25
SOT23 (Standard)
A1
A A2 Dim Min Max Typ
A 0.90 1.15 1.025
c A1 0.00 0.10 0.05
a A2 0.85 1.10 0.975
L1 L
b b 0.30 0.51 0.40
c 0.080 0.202 0.11
D 2.80 3.00 2.90
E 2.25 2.55 2.40
E1 1.20 1.40 1.30
e 0.89 1.03 0.915
e1 1.78 2.05 1.83
E E1 F 0.40 0.60 0.535
L1 0.45 0.61 0.55
L 0.25 0.55 0.40
a 0° 8° --
All Dimensions in mm
e
F e1

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23 (Standard)

Dimensions Value (in mm)

Y1 C
C 2.0
X 0.8
X1 1.35
Y 0.9
Y1 2.9

X X1

MMBF170 4 of 5 July 2024

Document number: DS30104 Rev. 16 - 2 www.diodes.com © 2024 Copyright Diodes Incorporated. All Rights Reserved.
 MMBF170

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www.diodes.com

MMBF170 5 of 5 July 2024

Document number: DS30104 Rev. 16 - 2 www.diodes.com © 2024 Copyright Diodes Incorporated. All Rights Reserved.