BJT VS FET

Description BJT FET

Current Controlled (Small current at
Voltage Controlled (where the voltage
the base terminals controlled the large
applied to the gate controls the current
current at emitter and collector
flow between the source and drain)
Control Mechanism terminals)

where the input voltage controls the

input current controls the output
output current.
current.
Current flows only due to majority
charge carriers.

Electronics (NPN) and Holes (PNP) for (either electrons in an N-channel FET or
Charge Carries current flow (Majority and minority holes in a P-channel FET).
carriers)
A type of transistor in which electric
field is used to control the flow of
current in a semiconductor.
Polarity Bipolar Unipolar
 FETs have three terminals:
the source, the drain, and the
gate. The gate terminal
controls the conductivity of
the channel between the
source and the drain.
Depending on the type of
FET, the channel can be
 Emitter (Highly dopes): is the formed by either majority
terminals through which the electrons (N-channel FET) or
majority carriers (electrons majority holes (P-channel
for NPN and holes for PNP) FET).
enter the transistor.  Source (S): The source
 Base (Light Doped) – middle terminal is the terminal from
region of transistor. Control which the majority charge
Terminals the flow of charge carries carriers (electrons for n-
from the emitter to the channel JFET or holes for p-
collector. channel JFET) enter the
 Collector (Slightly doped) – channel.
collects the majority charges  Drain (D): The drain terminal
emitted from emitter. is the terminal through which
the majority charge carriers
exit the channel.
 Gate (G): The gate terminal
controls the conductivity of
the channel by modulating
the depletion region width. It
determines the output
current based on the voltage
applied to it.
Connections Common Base: Common source (CS), common gate
(CG), and common drain (CD)
Common Emitter

Page 1 of 13
 Common Collector

BJTs have three different modes of

operation: active mode, saturation
mode, and cutoff mode. In the active
mode, the transistor acts as an
amplifier, where a small input current
or voltage controls a larger output
current. In the saturation mode, the
transistor is fully turned on, allowing a
maximum current to flow through it. In
the cutoff mode, the transistor is
turned off, and no current flows
through it.
Very high (megaohm to gigaohm
Low (kiloohm range) due to forward-
Input Impedance range) due to insulated or reverse-
biased PN junction
biased gate
High (in common-emitter
Output Resistance Low (in common-source configuration)
configuration)
Temperature coefficient Positive temperature coefficient. Negative temperature coefficient.
Switching speed Low High
More sensitive to changes in applied Less sensitive to variations in applied
Sensitivity
voltage. voltage.
Noise Higher (due to minority carriers) Lower (no recombination noise)
Smaller, ideal for integrated circuits
Size Larger, less compact
(ICs)
Switching Speed Slower Faster
Higher (requires continuous base
Power Consumption Lower (minimal gate current)
current)
Gain-Bandwidth Higher Lower
Radiation Sensitivity More susceptible Less susceptible
Linear relationship between input and Non-linear relationship between input
Relationship
output. and output.
Cost Cheaper Expensive
Demands special handling during
Installation Does not require special handling
installation
Applications Amplifiers: Signal amplification in audio Digital circuits: The basis for CMOS
systems, radio frequency (RF) circuits, (Complementary Metal-Oxide-
and general-purpose amplifiers. Semiconductor) technology in
microprocessors and memory chips,
Switches: Logic circuits, including due to low power consumption and
Transistor-Transistor Logic (TTL), and high packing density.
switching power supplies.
High-power applications: Power
Oscillators: For generating periodic MOSFETs are used in switch-mode
waveforms in communication systems. power supplies and motor controllers.

Voltage regulators: Ensuring stable Low-noise amplifiers: Used in sensitive

output voltage. electronic devices like tuners,
receivers, and sensors due to low noise
generation.

Analog switches: For multiplexing and

signal routing.

Page 2 of 13
 High-frequency circuits: In RF and
microwave applications, like satellite
communication systems.

Buffer amplifiers: Used in devices like

oscilloscopes and voltmeters because
of their high input impedance.
NPN and PNP (differing in the
arrangement of N-type and P-type
semiconductor material)

NPN: A NPN bipolar junction transistor

operates by controlling the flow of
There are different types of FETs,
current between two of its terminals,
including Metal-Oxide-Semiconductor
called the collector and emitter using a
Field-Effect Transistors (MOSFETs),
Types smaller current at the base terminal.
Junction Field-Effect Transistors (JFETs),
and Insulated-Gate Bipolar Transistors
PNP: in a PNP the base terminal is (IGBTs).
typically negatively charged with
respect to the emitter, causing a small
current flow out of the base terminals.
This small current controls a larger
current flowing from the emitter to the
collector terminals.
Field-Effect Transistors (FETs) offer
several advantages over Bipolar
Bipolar Junction Transistors (BJTs) have
Junction Transistors (BJTs). FETs have a
advantages over Field-Effect
high input impedance, which allows for
Transistors (FETs) in certain
easier integration into circuits and
applications. BJTs offer higher current
reduces the loading effect on the
handling capabilities, lower output
Advantages of BJT over FET preceding stages. They also have low
impedance, lower voltage
power consumption, making them
requirements, simpler biasing circuits,
suitable for battery-powered devices.
Advantages of FET over BJT better linearity, and can be more cost-
FETs have fast switching speeds,
effective. They are suitable for power
enabling efficient digital signal
applications, driving loads directly, low
processing. They exhibit low noise
voltage operation, simpler circuit
characteristics, making them ideal for
design, precise signal amplification, and
amplification applications. Additionally,
cost-sensitive applications.
FETs have a high voltage gain and good
thermal stability.
In conclusion, the Bipolar Junction Transistor (BJT) and the Field-Effect Transistor (FET) are two distinct transistor types with
their own set of characteristics and advantages. The BJT, with its current-controlled behavior and low input impedance,
remains a popular choice for applications requiring high current amplification and low-frequency operation. On the other
hand, the FET, with its voltage-controlled behavior, high input impedance, low power consumption, and fast switching
speeds, excels in high-frequency applications, low-power circuits, and digital signal processing.

The choice between BJT and FET depends on the specific requirements of the application, taking into consideration factors
such as current handling capabilities, voltage gain, power consumption, and cost-effectiveness. By understanding the
differences between BJT and FET, engineers can make informed decisions to optimize the performance of their electronic
designs and pave the way for technological advancements in various fields.

Page 3 of 13
 Feature BJT (Bipolar Junction Transistor) FET (Field Effect Transistor)
Current-controlled device → small base
Control Voltage-controlled device → gate voltage (VGS) controls
current controls large collector-emitter
Mechanism current between drain & source.
current.
Bipolar: Both majority & minority carriers Unipolar: Current flow due to only majority carriers
Charge Carriers
(Electrons in NPN, Holes in PNP). (electrons in N-FET, holes in P-FET).
Polarity Bipolar Unipolar
- Emitter (E): Heavily doped, injects carriers. -
- Source (S): Entry of majority carriers. - Drain (D): Exit of
Base (B): Thin, lightly doped, controls carriers.
Terminals carriers. - Gate (G): Controls channel conductivity (via field
- Collector (C): Moderately doped, collects
effect).
carriers.
Basic Common Base (CB), Common Emitter (CE), Common Source (CS), Common Gate (CG), Common Drain
Configurations Common Collector (CC). (CD).
- Cut-off (VGS < Vth): No conduction. - Ohmic region: Acts
Modes of - Active: Amplifier mode. - Saturation: Fully
like variable resistor. - Saturation (VDS > VGS − Vth):
Operation ON (switching). - Cutoff: Fully OFF.
Amplifier mode.
Input Impedance Low (kΩ range, due to base current). Very high (MΩ–GΩ, due to insulated/reverse-biased gate).
Output Resistance High (esp. in CE config). Low (CS config).
Temperature
Positive → risk of thermal runaway. Negative → self-stabilizing.
Coefficient
Switching Speed Slower (limited by charge storage). Faster (no charge storage, voltage-controlled).
Sensitivity Highly sensitive to base current changes. Less sensitive to minor gate voltage changes.
Noise
Higher noise (minority carrier recombination). Very low noise (no recombination, only majority carriers).
Performance
Size & IC Use Larger, less compact. Smaller, ideal for ICs (CMOS, VLSI).
Power
Higher (requires continuous base current). Lower (only gate charging current).
Consumption
Gain-Bandwidth
Higher (better linearity, better for analog). Lower.
Product
Radiation
More susceptible. Less susceptible.
Sensitivity
Relationship
Linear (better analog amplification). Non-linear.
(Input vs Output)
Cost Cheaper. More expensive.
Installation No special handling needed. Requires careful handling (gate oxide fragile).
Types NPN & PNP JFET, MOSFET (Enhancement/Depletion), IGBT
- CMOS digital ICs (microprocessors, memory). - Power
- Amplifiers (audio, RF). - Oscillators. - Voltage
Applications MOSFETs in SMPS & motor drives. - Low-noise amplifiers
Regulators. - Switching in TTL circuits.
(receivers, sensors). - Analog switches, multiplexers.

Advantages

✅ BJT Advantages over FET

 Higher current gain, higher transconductance.

 Better linearity → suited for precise analog amplification.
 Lower cost.
 Lower output impedance.
 Can handle higher currents directly.

✅ FET Advantages over BJT

 High input impedance → minimal loading of preceding stage.

 Low power consumption → ideal for battery devices.

Page 4 of 13
  Faster switching (high-speed digital).
 Low noise → perfect for biomedical signal amplifiers (ECG, EEG).
 More thermally stable (no thermal runaway).
 Compact size → ICs, CMOS logic.

🎯 Exam-Oriented Key Points (PPSC Style)

 BJT → Current-controlled, bipolar, noisy, high gain, analog.

 FET → Voltage-controlled, unipolar, low noise, low power, digital.
 MOSFET (Enhancement type) is the backbone of modern electronics (CMOS logic).
 BJT = better amplifiers, FET = better switches.

Parameter JFET (Junction Field Effect Transistor) MOSFET (Metal-Oxide-Semiconductor FET)

Structure Gate forms a p–n junction with the channel. Gate is insulated from channel by a thin SiO₂ oxide layer.
Voltage-controlled via reverse bias p–n Voltage-controlled via capacitive effect across oxide (no
Gate Control
junction. current through gate ideally).
High (~10⁸ Ω), but less than MOSFET (due to Extremely high (~10¹² Ω or more) due to insulated gate →
Input Impedance
reverse-biased junction leakage). negligible gate current.
Two modes: Depletion-mode (channel exists at VGS = 0)
Only depletion-mode (channel exists by
Types and Enhancement-mode (channel induced only when VGS
default, pinched off by reverse bias).
exceeds threshold).
Gate voltage controls channel width by
Gate voltage induces charges in the channel by capacitive
Operation Principle reverse-biasing the p–n junction (squeezing
effect → controls conductivity.
channel).
Channel Types n-channel and p-channel JFETs. n-channel and p-channel MOSFETs.
Small leakage current flows (reverse bias
Gate Current Almost zero (ideal capacitor behavior).
current).
Transconductance
Lower compared to MOSFET. Higher → MOSFETs provide greater gain & faster switching.
(gm)
Switching Speed Moderate speed (slower than MOSFET). Very fast switching (used in digital ICs, microprocessors).
Better for low-noise analog and moderate Widely used in both low-power (digital ICs) and high-power
Power Handling
power circuits. switching.
Very low noise → preferred in sensitive Higher noise compared to JFET (due to oxide traps & hot
Noise Performance
amplifiers (biomedical, instrumentation). carriers).
More stable due to reverse-biased gate Prone to breakdown by static discharge (very sensitive to
Thermal Stability
junction. ESD).
Fabrication
Easier to fabricate than MOSFET. More complex (oxide layer, precise threshold control).
Complexity
Applications - Low-noise amplifiers

 Analog biomedical front-ends (ECG, EEG)

 RF circuits | - Digital electronics (microprocessors, memory, CMOS logic)
 Power electronics (SMPS, motor drivers)
 Biomedical ICs (implantable chips, digital signal processing). |

🔑 Key Conceptual Differences

1. Control Mechanism
o JFET → channel controlled by reverse-biased junction.

Page 5 of 13
 o MOSFET → channel controlled by electric field through oxide (capacitor effect).
2. Modes of Operation
o JFET → always depletion-type.
o MOSFET → both depletion and enhancement available (enhancement is dominant in ICs).
3. Suitability
o JFET → low-noise, precision analog.
o MOSFET → fast switching, digital + power electronics.

✅ Biomedical Engineering Angle (PPSC Relevance)

 JFETs → used in front-end of biomedical sensors (ECG/EEG amplifiers) due to low noise.
 MOSFETs → used in medical ICs (digital processors inside imaging devices, pacemakers, infusion pumps)

BJT
UJT FET SCR
Parameter (Bipolar Junction
(Unijunction Transistor) (Field Effect Transistor) (Silicon Controlled Rectifier)
Transistor)
Single PN junction, 3 terminals Two PN junctions, 3 Voltage-controlled, 3
Four-layer PNPN, 3 terminals
Structure (Emitter E, Base-1 B1, Base-2 terminals (Emitter, terminals (Source, Drain,
(Anode, Cathode, Gate)
B2) Base, Collector) Gate)
Current-controlled
Voltage-controlled (emitter Voltage-controlled (gate Current-triggered (gate
Control Type (base current controls
voltage controls conduction) voltage controls channel) current turns it ON)
conduction)
Active, Cutoff,
Ohmic, Cutoff, Saturation, OFF, ON (Latching behavior,
Modes of Normally used as relaxation Saturation modes for
Pinch-off (depending on once ON stays ON until
Operation oscillator or triggering device amplification &
FET type) current < holding current)
switching
Cannot amplify (not an
Can amplify (high gain Can amplify (voltage- Cannot amplify, only acts as
Amplification amplifier, only
device) controlled gain) switch/controlled rectifier
oscillator/trigger)
Low (requires
Input Moderate (lower than FET, Low (needs gate current to
significant base Very high (10⁶–10⁹ Ω)
Resistance higher than BJT) trigger, then latches)
current)
Large (10s to 100s Moderate (mA to 100s
Output Very high (tens to 100s of
Small (mA range) mA, up to Amps in mA, Power MOSFETs →
Current Amps in power SCRs)
power BJTs) Amps)
Moderate (not as fast as
Switching Moderate to fast Very fast (especially
Moderate (used in oscillators) MOSFETs, used in AC power
Speed (depends on BJT type) MOSFETs)
control)
Relaxation oscillator, Power control (AC/DC motor
Amplifiers, digital Amplifiers, analog
triggering SCRs/triacs, drives, lamp dimmers,
Applications logic, switching, signal switches, digital logic,
sawtooth wave generators, inverters, controlled
processing power electronics
timing circuits rectifiers)
Symbol Simple (one emitter arrow, More complex (two Channel + gate Thyristor symbol (anode,
Simplicity two bases) junctions) representation cathode, gate)
Main Very cheap, simple High current handling High input resistance, low High power handling with
Advantage oscillator/trigger device & amplification power consumption control capability
Requires continuous Sensitive to static charges Latches ON, needs forced
Main Cannot amplify, limited power
base current → power (MOSFETs), lower power commutation (hard to turn
Limitation handling
loss than BJT for small devices OFF)

Key Takeaways

Page 6 of 13
  UJT is neither a true amplifier like BJT/FET nor a power switch like SCR; it is a special-purpose device mainly for
oscillators, pulse generation, and triggering.
 Compared to BJT/FET, UJT is much simpler but limited in function.
 Compared to SCR, UJT is often used as a trigger source for firing SCRs in power electronics.

IGBT:

The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar
Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device.

The IGBT Transistor takes the best parts of these two types of common transistors, the high input impedance and high
switching speeds of a MOSFET with the low saturation voltage of a bipolar transistor, and combines them together to produce
another type of transistor switching device that is capable of handling large collector-emitter currents with virtually zero gate
current drive.

The Insulated Gate Bipolar Transistor, (IGBT) combines the insulated gate (hence the first part of its name) technology of the
MOSFET with the output performance characteristics of a conventional bipolar transistor, (hence the second part of its name).

The result of this hybrid combination is that the “IGBT Transistor” has the output switching and conduction characteristics of a
bipolar transistor but is voltage-controlled like a MOSFET.

IGBTs are mainly used in power electronics applications, such as inverters, converters and power supplies, were the demands of
the solid-state switching device are not fully met by power bipolar and power MOSFETs. High-current and high-voltage bipolar
are available, but their switching speeds are slow, while power MOSFETs may have higher switching speeds, but high-voltage
and high-current devices are expensive and hard to achieve.

The advantage gained by the insulated gate bipolar transistor device over a BJT or MOSFET is that it offers greater power gain
than the standard bipolar type transistor combined with the higher voltage operation and lower input losses of the MOSFET. In
effect it is an FET integrated with a bipolar transistor in a form of Darlington type configuration as shown.

Small Signal Vs Power Transistor

Parameter Small Signal Transistor Power Transistor

Purpose / Designed for amplification of weak (small) signals Designed for switching and amplification of large
Application like audio, radio frequency, and sensor outputs. currents and voltages in power control circuits.
Typical Current Handles low currents (mA range, typically < 500 Handles high currents (up to several amperes,
Handling mA). sometimes tens or hundreds of A).
Operates at high voltages (up to hundreds of volts,
Voltage Rating Operates at low voltages (generally < 50V).
sometimes > 1kV).
Power Dissipation Very low power dissipation (milliwatts to < 1 High power dissipation (watts to kilowatts) with heat

Page 7 of 13
 Parameter Small Signal Transistor Power Transistor
watt). sinks required.
Large size, often TO-220, TO-247, TO-3 with metal tab
Physical Size Small size, usually in TO-92, SOT-23 packages.
for heat dissipation.
Lower current gain (20 – 50) because of high current
Gain (β or hFE) High current gain (100 – 1000).
handling.
Frequency Wide bandwidth; suitable for high frequency Limited frequency response; mainly used in low to
Response applications (RF, audio, signal amplification). medium frequency power switching.
Slower compared to small signal transistors due to
Switching Speed Very fast due to low capacitance.
higher capacitance and large junction area.
Requires heat sinks or cooling systems due to high
Heat Management No heat sink required (natural cooling is enough).
power dissipation.
Examples BC547, 2N2222, 2N3904. TIP41, 2N3055, MJ2955, IGBT modules.
Used in X-ray machines, MRI gradient power supplies,
Biomedical Used in ECG, EEG, EMG amplifiers, hearing aids,
hospital UPS, surgical laser drivers, ventilator
Applications sensor interfacing, medical imaging pre-amps.
compressors.

Key Points for Conceptual Clarity

 Small Signal Transistors → Amplification of weak signals (low voltage, low current).
 Power Transistors → Switching and amplification of large loads (motors, power supplies, converters).
 Size & Packaging differs significantly because of heat dissipation needs.
 Current Gain is high in small signal, but intentionally lower in power transistors for stability at high currents.

ough Conceptual MCQs — Transistors & Their Types

(BJT, FET/JFET, MOSFET, IGBT, Small-Signal vs Power, “Which to prefer & why”, plus Biomedical applications)

A) Core Transistor Concepts

Q1. At room temperature, which device’s transconductance increases linearly with its quiescent current?
A) JFET B) Enhancement MOSFET C) BJT D) IGBT
✅ Ans: C — gmBJT=IC/VTg_m^{BJT} = I_C/V_TgmBJT=IC/VT; linear in ICI_CIC (with VT≈26 mVV_T\approx 26\,\text{mV}VT
≈26mV).

Q2. Which device naturally includes a body diode between its main terminals?
A) BJT B) JFET C) MOSFET D) IGBT (die-level)
✅ Ans: C — Power MOSFET structure creates an intrinsic body diode; IGBT modules often add an external freewheel diode.

Q3. For very high source impedance sensors (≥1 MΩ), which front-end input device minimizes input bias error?
A) BJT B) JFET/MOSFET C) IGBT D) Small-signal BJT Darlington
✅ Ans: B — FET gates have ultra-high input impedance → negligible bias current.

Page 8 of 13
Q4. Which device is most prone to thermal runaway in linear operation without emitter/source balancing?
A) BJT B) JFET C) MOSFET D) IGBT
✅ Ans: A — BJT has negative temp-co of VBEV_{BE}VBE → current hogging risk.

Q5. In a switching converter, dynamic losses scale approximately as 12CissV2f\tfrac12 C_{iss} V^2 f21CissV2f. Which parameter
is not part of that expression?
A) Input capacitance B) Bus voltage C) Switching frequency D) On-resistance
✅ Ans: D — RDS(on)R_{DS(on)}RDS(on) impacts conduction loss, not the ½CV2f½CV^2f½CV2f switching loss.

B) BJT Focus

Q6. A CE amplifier with constant ICI_CIC is moved from 25 °C to 75 °C. Which parameter rises significantly?
A) VBEV_{BE}VBE B) gmg_mgm C) rπr_\pirπ D) Early voltage
✅ Ans: B — gm=IC/VTg_m = I_C/V_Tgm=IC/VT; VTV_TVT increases with T → gmg_mgm increases slightly for fixed ICI_CIC.

Q7. Emitter degeneration (adding RER_ERE) primarily improves:

A) Voltage gain B) Linearity & bias stability C) Bandwidth only D) Power efficiency
✅ Ans: B — Local negative feedback via RER_ERE stabilizes bias and linearizes transfer.

Q8. In saturation, an NPN typically shows:

A) VCE≈0.2 VV_{CE}\approx 0.2\,\text{V}VCE≈0.2V and VBE≈0.7–0.9 VV_{BE}\approx 0.7–0.9\,\text{V}VBE≈0.7–0.9V B) VCE≈1
VV_{CE}\approx 1\,\text{V}VCE≈1V
C) VCB>0V_{CB} > 0VCB>0 reverse-biased D) No base charge storage
✅ Ans: A — Both junctions forward-biased; also incurs storage charge.

Q9. For lowest voltage noise with a 50 Ω source, the best input device is:
A) JFET B) MOSFET C) Low-noise BJT D) IGBT
✅ Ans: C — BJTs excel with low source impedance (voltage noise advantage).

Q10. Early effect primarily causes:

A) gmg_mgm increase with ICI_CIC B) Output resistance reduction (finite ror_oro)
C) Higher VCE(sat)V_{CE(sat)}VCE(sat) D) Thermal runaway immunity
✅ Ans: B — Base-width modulation lowers ror_oro, making gain depend on VCEV_{CE}VCE.

C) JFET / FET Focus

Q11. A JFET is biased at VGS=−12VPV_{GS}=-\tfrac12 V_PVGS=−21VP. Drain current is approximately:

A) IDSSI_{DSS}IDSS B) 000 C) IDSS(1−1/2)2I_{DSS}(1-1/2)^2IDSS(1−1/2)2 D) IDSS/2I_{DSS}/2IDSS/2
✅ Ans: C — Shockley: ID=IDSS(1−VGS/VP)2I_D = I_{DSS}(1 - V_{GS}/V_P)^2ID=IDSS(1−VGS/VP)2.

Q12. JFET gate is normally:

A) Forward-biased B) Reverse-biased C) Floating through oxide D) Bootstrapped
✅ Ans: B — That’s why JFET is depletion-only.

Q13. JFETs are preferred over MOSFETs when the priority is:
A) Lowest gate leakage (DC) B) Highest input impedance
C) Lowest 1/f noise with mega-ohm sources D) Highest f_T
✅ Ans: C — JFETs often have excellent low-freq noise for high-R sources.

Q14. Pinch-off in JFET means:

A) Device off in all regions B) Channel current becomes mostly VGS-controlled, weakly dependent on VDS

Page 9 of 13
C) Avalanche breakdown D) Thermal shutdown
✅ Ans: B — Saturation region for JFET.

Q15. In n-channel JFET, making VGSV_{GS}VGS more negative does what?

A) Increases IDI_DID B) Decreases IDI_DID C) No change D) Triggers thyristor action
✅ Ans: B — Depletion widens → channel narrows.

D) MOSFET Focus

Q16. In saturation (enhancement nMOS), gmg_mgm is approximately:

A) ID/VTI_D/V_TID/VT B) 2ID/VOV2I_D/V_{OV}2ID/VOV C) VOV/2IDV_{OV}/2I_DVOV/2ID D)
1/RDS(on)1/R_{DS(on)}1/RDS(on)
✅ Ans: B — With VOV=VGS−VthV_{OV}=V_{GS}-V_{th}VOV=VGS−Vth.

Q17. Parallel power MOSFETs share current well mainly because:

A) Negative temp-co of RDS(on)R_{DS(on)}RDS(on) B) Positive temp-co of RDS(on)R_{DS(on)}RDS(on)
C) Higher gmg_mgm with T D) Body diode
✅ Ans: B — Hotter device’s RDS(on)R_{DS(on)}RDS(on) rises → self-balancing.

Q18. Which factor most limits high-voltage MOSFET conduction efficiency?

A) Threshold voltage B) Gate charge C) RDS(on)R_{DS(on)}RDS(on) growing rapidly with breakdown rating
D) Body diode speed
✅ Ans: C — Silicon trade-off: higher BV → higher RDS(on)R_{DS(on)}RDS(on).

Q19. A 100 V, 20 A motor drive at 100 kHz prefers:

A) BJT B) IGBT C) MOSFET D) TRIAC
✅ Ans: C — High-frequency switching favors MOSFET.

Q20. The Miller plateau mainly affects:

A) DC conduction loss B) Turn-on/off time and driver sizing
C) BV rating D) Body diode recovery
✅ Ans: B — Gate charge at the plateau dominates switching speed/driver power.

E) IGBT Focus

Q21. A 600 V, 50 A inverter at 20 kHz typically favors:

A) BJT B) MOSFET C) IGBT D) JFET
✅ Ans: C — IGBT balances HV conduction loss and moderate switching speed.

Q22. Compared to MOSFETs, IGBTs usually show higher turn-off loss due to:
A) Body diode B) Tail current from stored charge
C) Gate leakage D) Miller effect only
✅ Ans: B — Minority carrier tail current.

Q23. Typical IGBT gate drive for fast switching is around:

A) 0–5 V B) 0–10 V C) 0/-5 V D) ~+15 V (often +15/0 or +15/-5)
✅ Ans: D — Commonly +15 V on, 0 to −5 V off.

Q24. In IGBT modules, the freewheel path for inductive loads is usually provided by:
A) Intrinsic body diode B) External/Co-pack diode

Page 10 of 13
C) Emitter-collector diode D) Snubber capacitor only
✅ Ans: B — Co-pack (anti-parallel) diode is standard.

F) Small-Signal vs Power Transistor

Q25. Which is true for power BJTs vs small-signal BJTs?

A) Higher hFEh_{FE}hFE in power devices B) Lower hFEh_{FE}hFE, larger die, slower
C) Same fTf_TfT D) Same package parasitics
✅ Ans: B — Power devices trade gain/speed for current/area.

Q26. Primary reason power devices need heat sinks:

A) Switching loss only B) Conduction + switching losses
C) Body diode only D) Gate charge only
✅ Ans: B — Both contribute significantly.

Q27. A small-signal transistor is least suitable for:

A) ECG preamp input stage B) Microphone preamp C) Driving a 24 V, 5 A solenoid D) Sensor bias
✅ Ans: C — That’s a power-switch task.

Q28. In power MOSFETs, package parasitic inductance mainly hurts:

A) DC gain B) High-di/dt switching (ringing, overshoot)
C) BV rating D) Rds(on) at DC
✅ Ans: B — Layout + package inductance shape transients.

G) “Which to Prefer & Why” (Trade-offs)

Q29. For linear, precision low-noise amplification of a 50 Ω source:

A) JFET B) BJT C) IGBT D) Power MOSFET
✅ Ans: B — BJT offers best voltage-noise with low source R.

Q30. For battery-powered ultra-low input bias measurement of a 1 MΩ sensor:

A) BJT B) JFET/MOSFET input C) IGBT D) Power BJT
✅ Ans: B — FET input avoids bias-current error.

Q31. For a 400 V, 30 A motor inverter at 20–30 kHz:

A) BJT B) JFET C) MOSFET D) IGBT
✅ Ans: D — IGBT is the sweet spot at that V/I and frequency.

Q32. To parallel many devices with minimal current hogging at DC:

A) BJTs B) MOSFETs C) IGBTs D) JFETs
✅ Ans: B — Positive temp-co of RDS(on)R_{DS(on)}RDS(on) aids sharing.

Q33. For >200 kHz hard-switched 48 V converters:

A) IGBT B) BJT C) MOSFET D) SCR
✅ Ans: C — High-speed advantage.

Q34. When you need very low dropout linear pass element at low voltage/high current, which is often best?
A) BJT Darlington B) Logic-level MOSFET in linear region (careful SOA) C) IGBT
D) JFET
✅ Ans: B — MOSFET can give milliohm-level drop; must respect SOA.

Page 11 of 13
H) Biomedical Applications (Device Choice & Rationale)

Q35. ECG/EEG front-end first stage prefers:

A) Power BJT B) JFET/MOSFET input op-amp/transistor
C) IGBT D) Small-signal BJT Darlington
✅ Ans: B — Ultra-high input impedance & low bias current protect microvolt-level signals.

Q36. Defibrillator H-bridge main switches typically are:

A) Small-signal BJTs B) JFETs C) IGBTs or HV MOSFETs D) UJTs
✅ Ans: C — High-voltage/high-current pulses demand IGBT/HV MOSFET.

Q37. Ultrasound transmit beamformer output stage often uses:

A) IGBTs (low speed) B) Fast MOSFETs C) BJTs only D) SCRs
✅ Ans: B — Fast, precise high-voltage pulses at high PRF → MOSFETs.

Q38. Ventilator blower motor inverter (24–48 V, 10–20 kHz) generally favors:
A) IGBT B) MOSFET C) BJT D) Triac
✅ Ans: B — Low-to-mid voltage + high switching freq → MOSFET.

Q39. MRI gradient amplifiers power stage commonly employs:

A) JFET arrays B) IGBT modules C) Small-signal BJTs D) UJTs
✅ Ans: B — High current, hundreds of volts → IGBT modules.

Q40. Photoplethysmography (PPG) / pulse oximeter TIA (photodiode readout) front-end favors:
A) BJT input B) FET input (very low bias current) C) IGBT D) Power MOSFET
✅ Ans: B — Photodiode leakage is tiny; FET input minimizes bias current error.

Q41. Electrosurgical unit (ESU) RF power stage at a few hundred kHz generally uses:
A) SCRs B) IGBTs only C) RF-rated MOSFETs D) UJTs
✅ Ans: C — RF MOSFETs handle the frequency and switching efficiently.

Q42. In biopotential amplifiers, the dominant noise mechanism the device choice tries to minimize is:
A) Shot noise of body diode B) 1/f and bias current noise at high source impedance
C) Tail current of IGBT D) Avalanche noise
✅ Ans: B — Hence FET-input architectures are common.

Q43. A battery-operated wearable (ultra-low power) prefers logic-level:

A) BJT switches B) MOSFET switches C) IGBT switches D) JFET switches
✅ Ans: B — Virtually zero DC gate power; efficient at low V.

Q44. To isolate & drive a small infusion pump motor from a microcontroller:
A) Small-signal BJT in linear region B) Logic-level MOSFET with flyback diode
C) UJT D) JFET
✅ Ans: B — Efficient low-side switching + diode for inductive kick.

Quick Recap (mental map)

 BJT: current-controlled, best low-R-source noise, linear; watch thermal runaway.

 JFET/MOSFET: voltage-controlled, ultra-high Zin, great for high-R sensors and fast switching; MOSFET has body diode,
Miller plateau.
 IGBT: MOS gate + BJT conduction → best at high V, high I, moderate kHz; tail current at turn-off.

Page 12 of 13
  Small-signal vs Power: speed/noise vs current/thermal; package & SOA matter.
 Biomedical: FET inputs for microvolt signals; MOSFETs for low-V fast switching; IGBTs for high-energy pulses/drives.

Page 13 of 13