PU–Question Bank Solid State

Multiple Choice Questions

1. Wax is an example of
(a) ionic crystal (b) covalent crystal (c) molecular crystal (d) amorphous solid
Sol: molecular crystal
Ans: (c)
2. Which one of the following is a molecular crystal?
(a) Rock salt (b) Quartz (c) Dry ice (d) Diamond
Sol: Dry ice
Ans: (c)
3. The number of octahedral sites per sphere in fcc structure is
(a) 8 (b) 4 (c) 2 (d) 1
Sol: No. of octahedral sites = No. of ions in the packing.
 No. of octahedral sites per sphere = 1.
Ans: (d)
4. Which of the following compound shows both Frenkel and Schottky defects?
(a) NaCl (b) ZnS (c) AgBr (d) KCl
Sol: KCl
Ans: (c)
5. Fe, CO and Ni are magnetic substance of which type?
(a) Paramagnetic (b) Ferromagnetic (c) Diamagnetic (d) Anti-ferromagnetic
Sol: Ferromagnetic
Ans: (b)
6. Which of the following is an amorphous solid?
(a) Graphite ( C ) (b) Quartz glass ( SiO2 ) (c) Chrome alum (d) Silicon carbide ( SiC )
Sol: Quartz glass ( SiO2 )
Ans: (b)
7. Which of the following is a network solid?
(a) SO2 (Solid) (b) I 2 (c) Diamond (d) H 2O (Ice)
Sol: Diamond
Ans: (c)
8. Which of the following is not the characteristic of ionic solid?
(a) Very low value of electrical conductivity in the molten state
(b) Brittle nature
(c) Very strong forces of interactions
(d) Anisotropic nature
Sol: Very low value of electrical conductivity in the molten state
Ans: (a)
9. The lattice site in a pure crystal cannot be occupied by ………...
(a) molecule (b) ion (c) electron (d) atom
Sol: electron
Ans: (c)

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PU–Question Bank Solid State

10. Cations are present in the interstitial sites in ………...

(a) Frenkel defect (b) Schottky defect (c) Vacancy defect (d) Metal deficiency defect
Sol: Frenkel defect
Ans: (a)
11. Which among the following is a crystalline solid?
(a) Soda glass (b) Sodium chloride (c) Teak wood (d) Paper
Sol: NaCl is a crystalline solid. All the others are amorphous.
Ans: (b)
12. KF is an example of
(a) Ionic crystal (b) Metallic crystal (c) Covalent crystal (d) Molecular crystal
Sol: Ionic crystal
Ans: (a)
13. The major binding forces of diamond, silicon and quartz is
(a) electrostatic force (b) electrical attraction (c) covalent bond force (d) van der Waal’s force
Sol: covalent bond force
Ans: (c)
14. Graphite is a
(a) covalent solid (b) ionic solid (c) molecular solid (d) metallic solid
Sol: covalent solid
Ans: (a)
15. A crystalline solid
(a) has no definite melting point (b) has an irregular three-dimensional arrangement
(c) softens slowly (d) changes abruptly from solid to liquid
Sol: A crystalline solid at its m.pt. changes abruptly from solid to liquid.
Ans: (d)
16. Which of the following describes the hexagonal close packed arrangement of spheres?
(a) ABCABA (b) ABCABC (c) ABABAB (d) ABBABB
Sol: ABABAB ….. type packing is called hexagonal close packing.
Ans: (c)
17. Close packing is maximum in the crystal lattice of
(a) simple cube (b) body centred cube (c) face centred cube (d) equal in all the three case
Sol: Close packing is maximum in face centred cubic lattice and minimum in simple cubic lattice.
Ans: (c)
18. When electrons are trapped into the crystal in anion vacancy, then defect is known as
(a) Schottky defects (b) Frenkel defect (c) F-centres (d) Stoichiometric defect
Sol: F-centres
Ans: (c)
19. In a crystal a  b  c and  =  = 90 and   90 it is
(a) monoclinic (b) rhombohedral (c) trigonal (d) tetragonal
Sol: monoclinic
Ans: (a)

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20. A match box exhibits which type of geometry

(a) cubic (b) tetragonal (c) orthorhombic (d) triclinic
Sol: For a match box, a  b  c and  =  =  = 90. Thus, it has orthorhombic geometry.
Ans: (c)

One Mark Questions

21. What is anisotropy? (D)
Answer: Anisotropy is the property of substances to exhibit variations in physical properties along different
directions or molecular axes.
22. Between glass and copper, which one is isotropic in nature? (D)
Answer: Glass
23. Arrange these solids in their increasing order of intermolecular attractions: ice, I 2 , solid ammonia (D)
Answer: I 2  Solid NH 3  ice ( H 2O )
24. Ionic solids conduct electricity in molten state but not in solid state. Give reason (D)
Answer: Ionic solids are non-conductor in solid state because of absence of free mobile ions but they are good
conductors in molten state or in aqueous state because of presence of free mobile ions.
25. Is diamond a network or a metallic solid? (P)
Answer: Diamond is covalent (or) network solid.
26. What type of crystalline solid is AIN ? (P)
Answer: Covalent (or) network solids
27. Which type of crystalline solids have very high melting point? (D)
Answer: Covalent or network solids
28. Define coordination number (D)
Answer: The number of closest or nearest neighbours of any constituent particle in the crystal lattice is called its
co-ordination number.
29. How many 3 dimensional crystal lattices are possible? (D)
Answer: 3
30. What is the coordination number of a particle in hcp? (P)
Answer: 12
31. How many octahedral voids are in ccp unit cell (P)
Answer: 4
32. What is an end centred unit cell? (D)
Answer: One Constituent particle is present at the centre of any two opposite faces besides the ones present at its
corners.
33. What is the formula of the compound if the unit cell of it contains atoms A , B and C occupy the lattice points
as shown (D)

−A
−B
−C

1 1
Answer: A = 8 = 1, B = 6  = 3, C = 1= 1
8 2
Formula of the compound in AB3C

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PU–Question Bank Solid State

34. Nickel crystallizes as FCC. How many unit cells are required to accommodate one mole of nickel atoms? (D)
Answer: 4 Ni atoms in one unit cell

6.023  1023
6.0231023 atoms in = = 1.5  1023 Unit cell
4
35. Define packing efficiency. (P)
Answer: Packing efficiency is the percentage of total space filled by the particles in a crystal.
36. Write the relationship between density and edge length of a unit cell. (P)
ZM
Answer: d =
a3 N A
37. What type of defect is exhibited by the solid solution of CdCl2 and AgCl ? (D)
Answer: Impurity defect
38. What are F-centres? (P)
Answer: In metal excess defect, the anionic site occupied by unpaired electrons are called F- centres
39. What is the colour imparted to/by KCl due to anionic vacancies? (D)
Answer: Violet (or Lilac)
40. ZnO turns yellow on heating. Name the type of defect created? (D)
Answer: Metal excess defect due to the presence of extra cations at interstitial sites.
41. What are non-stoichiometric defects? (D)
Answer: Which contain the constituent elements in non-stoichiometric ratio due to defects in crystal structures.
42. A sample of nickel oxide has the formula Ni0.98O . Name the type of non-stoichiometric defect itexhibits. (D)
Answer: Non-stoichiometric defect (metal deficiency defect).
43. What are intrinsic semiconductors? (D)
Answer: Electrical conductivity of semiconductors increase with rise in temperature since more electrons can Jump
to the conduction Band. Ex: Si and Ge (Show this type of behaviour)
44. How does electrical conductivity of an electrolyte vary with temperature? (D)
Answer: Increases with increase in temperature.
45. Name the type of semiconductor obtained when Ge is doped with indium. (P)
Answer: p − type semiconductors.
46. How are the domains arranged in MnO if it is a anti-ferromagnetic material? (D)
Answer: Oppositely oriented and cancel out each other’s magnetic moment
47. Give an example for the substance that exhibits ferrimagnetism. (D)
Answer: Ex: Fe3O4 (Magnetite), Ferrites like MgFe2O4 and ZnFe2O4
48. A metal has bcc system. What is the relationship between length of the body diagonal and radius of the metal
atom? (P)
4r
Answer: a =
3

Two Mark Questions

49. Distinguish crystalline and amorphous solids with respect to: (P)
(i) Melting point (ii) Heat of fusion
Answer:
Crystalline Solids Amorphous solids
(i) Sharp melting points (i) Melt over a certain range of (1 mark)

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PU–Question Bank Solid State

temperature
Definite and characteristic (ii) do not have definite heat of (1 mark)
(ii) heat of fusion fusion
50. What type of attractive force exists between constituent particles in: (D)
(i) Solid CO2 (ii) SiO2

Answer: (i) Dispersion (or) London forces (1 mark)

(ii) Covalent bonding (1 mark)
51. Write the differences between metallic and ionic crystalline solids (D)
Answer:
Metallic Solids Ionic crystalline solids
(i) Constituent particles are positive ions (i) Constituents particles are ions
(1 mark)
in a sea of delocalised electrons
(ii) Contain metallic bonding. (ii) Contain columbic (or) Electrostatic force
(1 mark)
Ex: Fe, Cu etc. Ex: NaCl , MgO etc.
52. Write the differences between metallic and molecular crystalline solids. (D)
Answer:
Metallic Solids Molecular solids
(i) Constituent particles are positive ions (i) Constituent particles are molecules
in a sea of delocalised electrons
(ii) Held together by metallic bonding (ii) Held together by
Ex: Fe, Cu etc. • Dispersion force Ex: Ar , I 2 etc.
• Dipole – Dipole Interactions Ex: HCl , SO2
• Hydrogen bonding Ex: H 2O (ice)
(2 marks)
53. Name two types of 2 dimensional close packing arrangement. (D)
Answer: (i) Square close packing (1 mark)
(ii) Hexagonal close packing of spheres (1 mark)
54. Name the two parameters that characterise a unit cell. (P)
Answer: (i) Edge lengths (a, b, c) (1 mark)
(ii) Axial angles ( ,  ,  ) (1 mark)
55. Define unit cell and crystal lattice (D)
Answer: Crystal lattice: The three dimensional arrangement of constituent particles in a crystal. (1 mark)
Unit cell: The smallest repeating unit which can generate crystal lattice when repeating in three dimensions.
(1 mark)
56. How many possible variations are in a cubic crystal system? Which one of these has 4 particles / unit cell? (D)
Answer: 3 (1 mark)
Face centered cubic system (1 mark)
57. What portion of the atom (or particle) belongs to a unit cell if it is located (P)
(i) In the body of the unit cell
(ii) At the centre of an edge of the unit cell?
Answer: (i) 1 (1 mark)

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1
(ii) (1 mark)
4
58. How many lattice points are there in unit cell of ( i) FCC (ii) end centred (D)
Answer: (i) 14 (1 mark)
(ii) 10 (1 mark)
59. Write one similarity and one difference between hcp and ccp? (D)
Answer:
HCP CCP
(i) Third layer is the repetition of first layer (i) Fourth layer is the repetition of first layer
(ii) ABAB………………type (ii) ABCABC type…………..
(iii) Co-ordination number -12 (iii) Co-ordination number is 12
(Any 2 point 1 mark each)
60. Calculate the number of atoms in face centred cubic unit cell. (P)
1 1
Answer: 8 corner atoms  atom + 6 face centered atoms  atom (1 mark)
8 2
=1+ 3 = 4 (1 mark)
61. Calculate the number of atoms in body centred cubic unit cell. (P)
Answer: Body centered units cell has 8 atoms at the corners and 1 atom at the body center.
1
8 corner atoms  atom share + 1 body centered atom (1 mark)
8
= 1+1 = 2 (1 mark)
62. In a compound, atoms A form ccp, atoms of B occupy all the tetrahedral voids and atom C occupy all the octahedral
voids. What is the formula of the compound? (P)
Answer: Number of atoms of A in CCP = 4
Number of tetrahedral voids = 8 Number of octahedral voids = 4
So, number of atoms of B = 8 Number of atoms of C = 4 (1 mark)
A;B;C
4;8; 4
1; 2 ; 1
So the formula of the compound is AB2C (1 mark)
63. A metal oxide crystallises in hcp arrangement for its oxide ions. 2/3rds of octahedral voids are occupied by metal
ions. What is the formula of the metal oxide? (D)
2−
Answer: Number of O ions = Number of octahedral voids = N
2
Number of ions of metal (M) = N (1 mark)
3
2
 Ratio of metal ions and O 2− ions is :1 or 2:3
3
Formula of the compound is M 2O3 (1 mark)
64. Aluminium crystallizes in ccp structure. Its metallic radius is 125 pm. Calculate the length of the face diagonal of the
unit cell (D)
Answer: In FCC = CCP , a = 2 2 r = 2 2 125pm (1 mark)
a = 2  1.414  125pm
a = 353.5pm (1 mark)

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PU–Question Bank Solid State

65. A metal crystallizes in bcc structure. Edge length of the unit cell is 300 pm. How many unit cells are in 5cm3 of the
metal? (D)

Answer: Volume of one unit cell = 300 10 ( −10 3

) cm3 = 2.710−23 cm3 (1 mark)

5
No of unit cell in 5cm3 = = 1.8  1023 (1 mark)
−23
2.7  10
66. What are point defects and line defects? (D)
Answer:
(i) Point defect are the irregularities (or) deviations from ideal arrangement around a point (or) an atom in a
crystalline substance. (1 mark)
(ii) Line defects are the irregularities (or) deviation from ideal arrangement in entire rows of lattice point. (1 mark)
67. Distinguish between Frenkel and Schottky defects. (P)
Answer:
Schottky Defect Frenkel Defect
(1) Equal number of cations and anions (1) Here, the smaller ion (usually cation) is
are missing from lattice points. dislocated from its normal site to an (1 mark)
interstitial site.
(2) It decreases the density of the solid. (2) It does not change the density of the solid.
(1 mark)
68. Explain metal excess defect due to anionic vacancy. (P)
Answer: Metal excess defect due to anionic vacancies: In this case, anions are missing from their lattice site leaving
a hole behind and thus causing an increase in the cation (metal) concentration. The hole formed are occupied by
electrons, thus the system remains electrically neutral. (1 mark)
The non- metal atoms may leave the surface in the form of gas. The electrons trapped in anion vacancies are called
F- centres, because they impart colour to the crystal. This defect is shown by the compounds which have schottky
defects like NaCl , KCl etc.. (1 mark)
69. Explain metal deficiency defect using ZnO as an example. (D)
Answer: When ZnO is heated, it loses oxygen and turns yellow due to decomposition of some of the ZnO .
1
ZnO ⎯⎯ → Zn2+ + O2 + 2e−1 (1 mark)
2
The Zn 2+ ion formed gets trapped into the vacant interstitial sites and electrons in the neighbouring interstitial
sites.
The yellow colour of ZnO when hot, is due to these trapped electrons. (1 mark)
70. Electrical conductivity of a semiconductor (i) Increases with temperature (ii) Increases on doping with a suitable
material. Give reasons (D)
Answer: (i) Electrical conductivity of semiconductors increase with rise in temperature. Since more electrons can
jump to the conduction band (1 mark)
(ii) On doping, impurities introduce electronic defects in them and create holes and electrons in the
semiconductor which are carriers of current (1 mark)
71. Write the differences between n-type and p-type semiconductors (P)
Answer:
n − type semiconductor p − type semiconductor
(1) Electrons contribute to conduction. (1) Holes contribute to conduction. (1 mark)
(2) Here the semiconductor is doped with a (2) Here the semiconductor is doped
(1 mark)
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PU–Question Bank Solid State

pentavalent atom like phosphorus. with a trivalent atom like Boron.

72. What type of semiconductor is obtained when (i) Silicon is doped with phosphorus (ii) Silicon is doped with
boron? (P)
Answer: (i) n-type semiconductor (1 mark)
(ii) p-type semiconductor (1 mark)
73. Mention the factors responsible for the magnetic moment of an electron. (D)
Answer: Its magnetic moment originates from two types of motions
(i) Its orbital motion around the nucleus (1 mark)
(ii) Its spin around its own axis (1 mark)
74. Write the differences between ferrimagnetic and ferromagnetic substances (P)
Answer: Ferrimagnetism: Ferrimagnetism is observed when the magnetic moments of the domains in the
substance are aligned in parallel and anti-parallel directions in unequal numbers. They are weakly attracted by
magnetic field as compared to ferromagnetic substances and on heating lose their property and become
paramagnetic. (1 mark)
Ex: Fe3O4 (magnetite), MgFe2O4 , ZnFe2O4
Ferromagnetism: Substance which are very strongly attracted by a magnetic field are called as ferromagnetic
substance. These substances can be permanently magnetised.
Ex: Fe , Co , Ni etc. (1 mark)

Three Mark Questions

75. Based on intermolecular forces, name the three types of molecular solids. Mention the forces of attraction in
them. (P)
Answer: (i) Non-polar molecular solid – Dispersion (or) London forces (1 mark)
(ii) Polar molecular solid- Dipole- Dipole interactions (1 mark)
(iii) Hydrogen bonded molecular solid – Hydrogen bonding (1 mark)
76. Differentiate covalent and polar molecular solids based on
(i) Constituent particles (ii) Bonding (iii) Melting point (D)
Answer:
Covalent Polar molecular solids
Constituent particles Atoms Molecules (1 mark)
Bonding Covalent bonding Dipole-Dipole interactions (1 mark)
Melting point Very high melting point Low melting point (1 mark)
77. Match the type of packing in column-I to column-II: (D)
Column-I Column-II
(i) Square close packing in 3 dimensions (a) The first layer and the fourth layer are identical
(ii) Hexagonal close packing in 3 dimensions (b) All layers are identical
(iii) Cubic close packing in 3 dimensions (c) The first layer and the third layer are identical
Answer: (i) –b (1 mark)
(ii) – c (1 mark)
(iii) – a (1 mark)

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78. What type of unit cells are A and B? How many particles per unit cell in B? (P)

A B
Answer: A- Simple cubic unit cell (1 mark)
B- Body centred cubic unit cell (1 mark)
Number of particle per unit cell in B = 2 (1 mark)
79. Calculate the packing efficiency in cubic close packing (ccp) structure or FCC. (P)
Answer:
In ABC ,
AC 2 = b 2 = BC 2 + AB 2
b2 = a 2 + a 2 = 2a 2
b = 2a [ a = unit cell edge length and face diagonal AC = b ]
If r is the radius of the sphere, then b = 2a = 4r
4r
or a = = 2 2r G B (1 mark)
2
H A
Each unit cell in hcp has effectively 4 spheres
b
4
Total volume of 4 spheres = 4     r 3
3 F
C
( )
3 3
And volume of cube = a = 2 2r E D (1 mark)
Volume occupied by 4 spheres in the unit cell
Packing efficiency =  100%
Total volumeof unit cell
4
4    r 3
= 3  100%
( )
3
2 2r

 16  3
   r  100 
 3 =  100 = 74% (1 mark)
16 2r 3 3 2
80. Calculate the packing efficiency in bcc structure. (P)
Answer:
In BCC, the atom at the centre will be in touch with the other two atoms diagonally A
arranged. c
a
In EFD, F
b 2 = a 2 + a 2 = 2a 2 a b
b = 2a E a D

Now in AFD
c 2 = a 2 + b 2 = a 2 + 2a 2 = 3a 2
c = 3a (1 mark)
The length of the body diagonal C = 4r
Where, r is the radius of the sphere.  3a = 4 r
4r
a=
3

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3
 4r  64 r 3
 Volume of the unit cell = a3 =   = (1 mark)
 3 3 3
volume occupied by 2 spheresin the unit cell
 Packing efficiency =  100%
total volumeof unit cell
4 
2  r 
=  3   100% = 3  100
64 r 3 8
3 3
= 68%
(1 mark)
81. Calculate the packing efficiency in simple cubic lattice (P)
Answer: Packing efficiency is the percentage of total space filled by the particles in a crystal. (1 mark)
In a simple cubic lattice, the atoms are located only on the corners of the cube.
The particles touch each other along the edge. Edge length or side of a cube = a , radius of a particle = r  a = 2 r
(1 mark)
 Volume of the cubic unit cell = a3 = ( 2r ) = 8r 3
3
(1 mark)
Since a simple cubic unit cell contains only 1 atom
4
Volume of the occupied space =  r 
3
volumeof oneatom
 Packing efficiency =  100%
volumeof cubicunit cell
4 3
r 
= 3  100 =  100 = 52.36% (1 mark)
3 6
8r
82. An element crystallises in fcc and has edge length 0.56 nm. Calculate the density of the element. Molar mass of
the element is 40g mol −1 (P)
ZM
Answer: d = (1 mark)
N A .a3
4  40
d= (1 mark)
6.02310 23
(0.5610−7 cm3 )
160
d=
1.057 1023  10−21
160
d= = 1.51gm / cm3 (1 mark)
105.7
83. An element X has a density of 6.23g/cm 3 . If the edge length of the unit cell is 4  10−8 cm , identify the type of
cubic unit cell. (D)
Given: Molar mass of the element = 60g mol−1 (1 mark)
zm
Answer: Density  =
3
a NA

( )
3
  a3  N A 6.23g/cm3  400  10−10 cm  6.022  1023 mol−1
z= = (1 mark)
M 60g/mol
z=4 (1 mark)
Since z = 4 type of unit cell is FCC (face centred cubic unit cell)

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84. A metal crystallizes in bcc unit cell. The atomic mass of the metal is 55.8g mol−1 , density = 7.9g cm −3 . Calculate the
edge length of the unit cell. (P)
ZM
Answer: d = (1 mark)
N A .a3
2  55.8
7.9 = (1 mark)
6.023  1023  a3
2  55.8
a3 = = 2.345  10−23 = 23.45 10−24
6.023  7.9  1023
a = 2.857  10−8 m = 28.57 nm (1 mark)
85. (i) What type of defect is introduced when molten NaCl is crystallised with SrCl2 ? (P)
−3 +2
(ii) How many moles of these vacancies are created, if the crystal obtained has 10 mole of Sr ions? (D)
Answer: (i) Impurity defect (1 mark)
+2
(ii) 1 mole of Sr creates 1 mole of cation vacancies. (1 mark)
−3 +2 −3 −3
10 mole of Sr creates 10 moles of cation vacancies so no of cation vacancies = 10 moles
(1 mark)
86. Account for the following: (D)
(a) Silicon doped with Al is p type semiconductor
(b) Frenkel defect does not change the density of ionic crystals
(c) Non-polar molecular solids have very low melting and boiling points.
Answer:
(a) Because Aluminium has less number of electrons which creates holes (positively charged) (1 mark)
(b) Because, the smaller ion (usually cation) is dislocated from its normal site to an interstitial site. So there is no
loss of ions and no change in density. (1 mark)
(c) Due to weak force of attractions between constituent particles (dispersion (or) London forces) (1 mark)
87. Differentiate metals, insulators and semiconductors in terms of band theory. (D)
Answer:
• In a metallic conductor, energy difference between valence band and vacant conduction band is
negligible. Therefore electron easily flows to the conduction band. (1 mark)
• In insulators the energy difference between two bands is very large. (1 mark)
• In semiconductors the valence band and the conduction band do not overlap on each other. There is an energy
gap between the two bands which is known as forbidden gap. (1 mark)
88. Arrangement of magnetic domains are as given: (i)  (ii) 
What type of magnetic property is in (i) and (ii) ? Which one of this becomes paramagnetic on heating? (D)
Answer: (i) Anti ferromagnetism (1 mark)
(ii) Ferrimagnetism (1 mark)
Ferrimagnetic substances becomes paramagnetic on heating. (1 mark)

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Five Mark Questions

89. (a) A cubic solid has elements P and Q. Atoms of Q at the corners and atom P at the body centre.
(i) What is the formula of the solid? (ii) What is the coordination number of P and Q?
(b) A compound forms hcp structure. What is the total number of voids in 0.4 mol of it? How many of these are
tetrahedral voids? Given N A = 6.022  1023 . (D)
Answer:
1
(a) Number of atoms of Q = 8  = 1
8
Number of atoms of P = 1
So, the formula of solid is PQ
Co-ordination number is 8 and 8 (2 marks)
23 23
(b) Number of close – packed particles (N) = 0.4  6.022  10 = 2.408  10
23
Number of octahedral voids = 2.408  10
And number of tetrahedral voids = 2 N = 2 2.408  1023 = 4.816  1023
Total no of voids = = 2.408  1023 + 4.816  1023 = 7.224 1023 (3 marks)
90. With respect to Frenkel and Schottky defects:
(i) In which type of crystalline solids are these found? (D)
(ii) When is Frenkel defect possible? (D)
(iii) What type of defect does these shows? (a) ZnS (b) NaCl (c) AgBr (D)
Answer:
(i) Frankel defect is shown by ionic solids in which there is a large difference in the size of ions. Schottky defect in
shown by ionic solids in which the cation and anion are of almost similar sizes. (1 mark)
(ii) When smaller ion (usually cation) dislocated from its normal site to an interstitial site. (1 mark)
(iii) (a) Frenkel defect ( ZnS ) (1 mark)
(b) Schottky defect ( NaCl ) (1 mark)
(c) AgBr shows both Frenkel and Schottky defects (1 mark)
2+ 3+
91. (a) In FeO solid, some Fe ions are missing, but the charge is balanced by the presence of Fe ions.
2+ 3+
(i) If Fe ions missing are 15, how many Fe ions balance the charge?
(ii) What type of defect does this lead to?
(iii) If for 100 O 2 − ions the number of Fe 2+ and Fe3+ are 85 and 10 respectively, what is the composition of
the non-stoichiometric FeO solid formed? (D)
(b) (i) How many types of primitive unit cells are known? (ii) Name any one crystal system for which only
primitive unit cells are possible. (D)
Answer:
(a) (i) 2Fe3+ ions balance the charge of 3Fe2 + ions (1 mark)
2+
x − − − − − − − − − − − −15 Fe ions
2  15 30
x= = = 10
3 3
So 10Fe3+ ions will balance the charge of 15Fe 2 + ions
(ii) Metal deficiency defect (Non- stoichiometric defect) (1 mark)
(iii) Fe0.95 O (1 mark)
(b) (i) 7 (1 mark)
(ii) Hexagonal, Rhombohedral and Triclinic crystal system. (1 mark)

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