Field Effect
Transistors
IBM/Motorola Power PC620
Motorola MC68020
IBM Power PC 601
EE314
1.Construction of MOS
2.NMOS and PMOS
3.Types of MOS
4.MOSFET Basic Operation
5.Characteristics
Chapter 12: Field
Effect Transistors
The MOS Transistor
Polysilicon Aluminum
JFET Junction Field Effect Transistor
MOSFET - Metal Oxide Semiconductor Field Effect Transistor
n-channel MOSFET (nMOS) & p-channel MOSFET (pMOS)
The MOS Transistor
Gate Oxide
Gate
Source
Polysilicon
n+
Drain
n+
p-substrate
Bulk Contact
CROSS-SECTION of NMOS Transistor
Field-Oxide
(SiO2)
p+ stopper
Switch Model of NMOS Transistor
| VGS |
Source
(of carriers)
Open (off) (Gate = 0)
Gate
Drain
(of
carriers)
Closed (on) (Gate = 1)
Ron
| VGS | < | VT |
| VGS | > | VT |
Switch Model of PMOS Transistor
| VGS |
Source
(of carriers)
Open (off) (Gate = 1)
Gate
Drain
(of carriers)
Closed (on) (Gate = 0)
Ron
| VGS | > | VDD | VT | |
| VGS | < | VDD |VT| |
MOS transistors Symbols
D
G
S
NMOS Enhancement NMOS Depletion
D
G
S
PMOS Enhancement
B
S
NMOS with
Bulk Contact
Channe
l
JFET and MOSFET Transistorsor
Symbol
L = 0.5-10 m
W = 0.5-500 m
SiO2 Thickness = 0.02-0.1 m
Device characteristics depend on L,W, Thickness, doping levels
MOSFET Transistor Fabrication Steps
Building A MOSFET Transistor Using Silicon
http://micro.magnet.fsu.edu/electromag/java/transistor/index.html
It is done. Now, how does it
work?
n-channel MOSFET Basic Operation
Operation in the Cutoff region
pn junction:
reverse bias
iD=0
for vGS<Vt0
Schematic
When vGS=0 then iD=0 until vGS>Vt0
(Vt0 threshold voltage)
n-channel MOSFET Basic Operation
Operation in the Triode Region
For vDS<vGS-Vt0 and vGS>Vt0 the NMOS is operating in the triode region
Resistor like characteristic
(R between S & D,
Used as voltage controlled R)
For small vDS, iD is proportional
to the excess voltage vGS-Vt0
n-channel MOSFET Basic Operation
Operation in the Triode Region
2
i D K 2 v GS Vt 0 v DS v DS
W KP
K
L 2
Device parameter KP for
NMOSFET is 50 A/V2
n-channel MOSFET Basic Operation
Operation in the Saturation Region (vDS is increased)
Tapering
of the
channel
- increments
of iD are
smaller
when
vDS is
larger
When vGD=Vt0 then the channel
thickness is 0 and
i D K v GS Vt 0
n-channel MOSFET Basic Operation
Example 12.1
An nMOS has W=160 m, L=2 m, KP= 50 A/V2 and Vto=2 V.
Plot the drain current characteristic vs drain to source voltage
for vGS=3 V.
2
i D K 2 v GS Vt 0 v DS v DS
i D K v GS Vt 0
W KP
K
L 2
n-channel MOSFET Basic Operation
Example 12.1
Characteristic
Channel length
modulation
id depends on vDS in
saturation region
(approx: iD =const in
saturation region)
2
i D Kv DS
p-channel MOSFET Basic Operation
It is constructed by interchanging the n and p regions of nchannel MOSFET.
Symbol
How does p-channel
MOSFET operate?
-voltage polarities
-iD current
-schematic
Characteristic
