BIPOLAR

JUNCTION
TRANSISTOR
(BJT)
The Basic Of BJT
 The standard Bipolar Transistor or BJT
comes in two basic forms.
 A NPN (Negative-Positive-Negative)
type and a PNP (Positive-Negative-
Positive) type, with the most
commonly used transistor type being
the NPN transistor.
 We also learnt that the transistor
junctions can be biased in one of three
different ways –
1. Common Base (C-B )
2. Common Emitter ( C-E )
3. Common Collector. (C-C)
 Physical Structure & Schematic Symbol
of Transistor

Physical Structure PNP

Schematic
Collector (C)
P
P
N
N Base (B)
P
P
Emmitter (E)
Physical NPN
Structure
Schematic
Collector (C)
N
N
P
P Base(B)
N
N
Emmitter(E)
 Conditions For Transistor Operation

VCB P VCB P
B N
N

VEB
P VEB P
E

1. E-B forward bias

2. C-B reverse bias
 Types Of Currents Flow In The Transistor
IC=95-99% drp IE

IC
C IB=1-5%
VC drp IE
B N
IB B
P IE=100%

N The arrow shows the electrons flow

VB when :
E i. C-B will be given reverse bias
E
IE
ii. E-B will be given forward bias
Formula used to calculate Ic and Ib

IC

VCB
P
N IE = I B + I C
IB
P
VEB
IE
NPN Transistor Configuration

Physical Structure Schematic Symbol

The Operation Of Transisitor

N P N
E

E C

B
V1 IB V2
Basic Transistor Operation
A bipolar transistor has terminals labeled
base, collector, and emitter.
 A small current at the base terminal (that
is, flowing from the base to the emitter)
can control or switch a much larger current
between the collector and emitter terminals
 However, this only happens when a small
biasing current (Ib) is flowing into the base
terminal of the transistor thus allowing the
base to act as a sort of control input.
Charge will flow between emitter and collector
terminals depending on the current in the base.

 Since internally the base and emitter connections

behave like a semiconductor diode.

A voltage drop develops between base and emitter

while the base current exists.

The amount of this voltage depends on the

material the transistor is made from, and is
referred to as VBE.
 Transistor as a switch

BJT used as an
electronic switch,
in grounded-emitter
configuration

Transistors are commonly used as electronic

switches, for both high power applications including
switched-mode power supplies and low power
applications such as logic gates.
BJT Operate As Amplifier

◦ An electronic amplifier is a device for

increasing the power and/or amplitude of
a signal.
◦ It does this by taking power from a
power supply and controlling the output
to match the input signal shape but with
a larger amplitude.
◦ In this sense, an amplifier may be
considered as modulating the output of
the power supply
 Amplifiers can be specified according to their
input and output properties. They have some
kind of gain, i.e. a factor between the output
and input signal.

 The gain may be specified as "output

voltage/input voltage", "output power/input
power" or any other combination of current,
voltage and power.

 In many cases, with input and output in the

same units, gain will be unitless
The Methods Of Connecting
A Transistor Circuit and Its
Characteristics

3 types of amplifier circuits :

i. Common-Emitter Circuit (C-E)

ii. Common – Base Circuit (C-B)
iii.Common–Collector Circuit (C-C)
 i. Common – Base Circuit (C-B)

Emitter Collector

Input Output

Base
Rajah 1
 ii. Common-Emitter Circuit (C-E).

Collector
Base

Input Output

Emitter

Rajah 3
 iii. Common–Collector Circuit (C-C)

Emitter
Base

Input Output

Collector
Rajah 2
 AMPLIFIER CIRCUITS
Common Emitter C-E
 Typically used as a voltage amplifier.
 In this circuit the base terminal of the transistor
serves as the input, the collector is the output, and
the emitter is common to both, hence its name.
 An analogous circuit called the
common source is constructed using
field-effect transistors
Common-Emitter Circuit (C-E)
Common base
Figure : Basic NPN common base circuit
In this circuit the emitter terminal of the
transistor serves as the input, the collector the
output and the base is common to both.

Common base used as a current amplifier has

higher voltage gain.

This configuration is also useful as a

current buffer since it has a current gain
of approximately unity.
Common – Base Circuit (C-B)
Common Collector
 In electronics, a common collector (also
known as an emitter follower or voltage
follower) amplifier is one of three basic
single-stage bipolar junction transistor
(BJT) amplifier topologies, typically used as
a voltage buffer.
 In this circuit the base terminal of the
transistor serves as the input, the emitter
the output, and the collector is common to
both, hence its name.
 An analogous circuit called the common
drain is constructed using field effect
transistors
Common Collector

 Figure 3: Basic NPN common collector circuit

 In this circuit the base terminal of the transistor
serves as the input, the emitter the output and
the collector is common to both
 This configuration is also used as a voltage
buffer and has higher current gain.
Common–Collector Circuit (C-C)
 Transistor Configuration Comparison Chart

COMMON COMMON
COMMON COMMON
AMPLIFIER TYPE EMITTER COLLECTOR
BASE EMITTER
(Emitter Resistor) (Emitter Follower)

INPUT/OUTPUT PHASE
0° 180° 180° 0°
RELATIONSHIP

VOLTAGE GAIN HIGH MEDIUM MEDIUM LOW

CURRENT GAIN LOW MEDIUM MEDIUM HIGH

POWER GAIN LOW HIGH HIGH MEDIUM

INPUT RESISTANCE LOW MEDIUM MEDIUM HIGH

OUTPUT RESISTANCE HIGH MEDIUM MEDIUM LOW

Load line (electronics)
A load line is used in graphic analysis of
circuits, representing the constraint other
parts of the circuit place on a non-linear
device, like a diode or transistor.
A load line represents the response of a
resistor which shares a current with the
device in question.
Since both currents are the same, the
operating point of the circuit will be at the
intersection of the curve with the load line.
In a BJT circuit, the BJT has a different
current-voltage(IC-VCE) characteristic
depending on the Base current.
Placing a series of these curves on the
graph shows how the base current will
effect the operating point of the curcuit.
It should be noted that the load line is
used for dc analysis, and has no bearing
on small-signal analysis once an operating
point is identified.
Load lines for Common-
Emitter configuration

Fig.: Common Emitter Load Line.

 1. The load line diagram illustrates all
possible values of collector current (IC)
and the collector voltage (VCE in this
case) for a given load resistor (RC).

 2. At saturation point, the transistor

current is maximum and voltage across
collector is minimum, for a given load.

 IC-SAT= VCC/RC.
 3.The cutoff point is the point where the load
line intersects with the collector voltage axis.
Here the transistor current is minimum
(approximately zero) and emitter is grounded.

VCE-CUTOFF=Vcc.

 4..The operating point of the circuit in this

configuration is generally designed to be in the
active region, approximately between middle of
the load line and close to saturation point.
Output Characteristics Curves
for a Typical
Bipolar Transistor
 The most important factor to notice is
the effect of Vce upon the collector
current Ic when Vce is greater than
about 1.0 volts.
 You can see that Ic is largely
unaffected by changes in Vce above this
value and instead it is almost entirely
controlled by the base current, Ib.
 When this happens we can say then
that the output circuit represents that of
a "Constant Current Source".
 It can also be seen from the common emitter circuit
above that the emitter current Ie is the sum of the
collector current, Ic and the base current, Ib, added
together so we can also say that " Ie = Ic + Ib " for
the common emitter configuration.
 By using the output characteristics curves in our
example above and also Ohm´s Law, the current
flowing through the load resistor, (RL), is equal to
the collector current, Ic entering the transistor which
inturn corresponds to the supply voltage, (Vcc)
minus the voltage drop between the collector and
the emitter terminals, (Vce) and is given as:
 Also, a Load Line can be drawn directly onto the
graph of curves above from the point of
"Saturation" when Vce = 0 to the point of "Cut-off"
when Ic = 0 giving us the "Operating" or Q-point of
the transistor. These two points are calculated as:
 Then, the collector or output charactersistics curves
for a Common Emitter Transistor circut can be
used to predict the Collector current, Ic, when given
Vce and the Base current, Ib.
 A Load Line can also be constructed onto the
curves to determine a suitable Operating or Q-
point which can be set by adjustment of the base
current.

α and β Relationships

 By combining the two parameters α and β we

can produce two mathematical expressions that
give the relationship between the different
currents flowing in the transistor.
 The values of Beta vary from about 20 for
high current power transistors to well
over 1000 for high frequency low power
type transistors.
 The equation for Beta can also be re-
arranged to give Ic as the subject, and
with zero base current (Ib = 0) the
resultant collector current Ic will also be
zero, (β x 0).
 Also when the base current is high the
corresponding collector current will also
be high resulting in the base current
controlling the collector current.
 One of the most important properties of the
Bipolar Junction Transistor is that a small
base current can control a much larger collector
current
 Consider the following example.

Example No1.
 A NPN bipolar transistor has a Beta value of 200.
Calculate the base current Ib required to switch
a resistive load of 4mA.


 Therefore, β = 200, Ic = 4mA and Ib = 20uA.

 DEE20023
SEMICONDUCTOR DEVICES

TOPIC 4:
FIELD-EFFECT TRANSISTOR (FET)

39
1. Junction Field-Effect Transistor (JFET)
 N-channel
 P-channel
2. Metal Oxide Semiconductor Field-Effect
Transistor (MOSFET)
 Enhancement-MOSFET
 Depletion-MOSFET

TYPES OF FET
40
FET vs BJT
FET BJT
Unipolar device – operate Bipolar device – operate
use only one type of use both electron & hole
charge carrier
Voltage-controlled device Current-controlled device –
– voltage between gate & base current control the
source control the current amount of collector
through device. current.
High input resistance High input impedance
Slower in switching (turn- Faster in switching (turn-
on & off) on & off)

41
JFET vs BJT

JFET BJT
2
 VGS 
I D  I DSS 1   I C  I B
 VP 

ID = IS IC ≈ IB

IG ≈ 0 A VBE ≈ 0.7 V
JFET vs BJT
THE JFET
 BJT – current
controlled, IC is direct
function of IB
 FET – voltage
controlled, ID is a
direct function of the
voltage VGS applied to
the input circuit. FIGURE: (a) Current-controlled and (b)
voltage-controlled amplifiers.

44
JFET
3 terminal:
 Drain – upper end
 Source – lower end
 Gate – 2 p/n-type
regions are diffuse in
the n/p-type material
to form a channel.

FIGURE: A representation of the

basic structure of the two types of
JFET.

45
 JFET Structures JFET Symbols

JFET Structures & Symbols

46
Basic Operation of JFET

 VDD provides a drain-to-source voltage and supplies current

from drain to source.
 V
GG sets the reverse-bias voltage between gate and source.
 JFET is always operated with the gate-source pn junction
reverse-biased.
 Reverse-biased of gate-source junction with negative gate
voltage produce a depletion region along pn junction –
increase resistance by restricting the channel width

47
Basic Operation of JFET

Figure: Greater VGG narrows Figure: Less VGG widens the

the channel (between the channel (between the white
white areas) which areas) which decreases the
increases the resistance of resistance of the channel
the channel and decreases and increases ID.
ID.

48
 The channel width and the channel resistance
can be controlled by varying the gate voltage –
controlling the amount of drain current, ID.
 The depletion region (white area) created by
reverse bias.
 Wider toward the drain-end of the channel –
reverse-bias voltage between gate and drain is
greater than voltage between gate and source.

Basic Operation of JFET

49
JFET Analogy
JFET operation can be compared
to a water spigot.
 The source of water pressure
is the accumulation of electrons
at the negative pole of the
drain-source voltage.
 The drain of water is the
electron deficiency (or holes) at
the positive pole of the applied
voltage.
 The control of flow of water is
the gate voltage that controls
the width of the n-channel and,
therefore, the flow of charges
from source to drain.
50
JFET Characteristic
Figure: JFET with VGS=0 V and
Figure: Drain Characteristic
variable VDS (VDD)
51
 JFET Characteristics and
Parameters, VGS = 0
 VGS = 0 V by shorting the gate to
source (both grounded).
 I increases proportionally with
D
increases of VDD (VDS increases as
VDD is increased). This is called
the ohmic region (point A to B).
 In this area (ohmic region) the
channel resistance is essentially
constant because of the depletion
region is not large enough to
have sufficient effect  VDS and
ID are related by Ohm’s law
 In JFET, IG = 0  an important
characteristic for JFET

52
 JFET Characteristics and
Parameters, VGS = 0
 At point B, the curve levels off and
enter the active region where ID
constant.
 Value of V
DS at which ID becomes
constant is pinch-off voltage, VP.
 As V
DD increase from point B to point C,
the reverse-bias voltage from gate to
drain (VGD) produces a depletion region
large enough to offset the increase in
VDS, thus keeping ID relatively constant.
V
DS increase above VP, produce almost
constant ID called IDSS.
 IDSS (drain to source current with
gate shorted) is max drain current at
VGS = 0V

53
JFET Characteristics and
Parameters, VGS = 0
• Breakdown occurs at point C
when ID begins to increase
very rapidly with any further
increase in VDS.
• It can result irreversible
damage to the device
• So JFETs are always
operated below breakdown
and within the constant-
current area (between points
B and C on the graph)

54
VGS controls ID
55
 As VGS is set to increasingly more negative by
adjusting VGG. A family of drain characteristic
curves is produced.
 Notice that ID decrease as the magnitude of VGS is
increased to larger negative value narrowing of
channel.
 For each increase in VGS, the JFET reaches pinch-
off (constant current begins) at values of VDS less
than VP.
 The amount of drain current is controlled by VGS.

VGS controls ID
56
Cutoff Voltage
 Value of VGS that makes
ID ≈ 0A is the cutoff
voltage, VGS(off).
 JFET must operated
between VGS=0V and
VGS(off).
 In n-channel JFET: V
GS
has large –ve value, ID
is reduce to zero.
 Cutoff effect due to
widening of depletion
region.
57
VGS controls ID
58
Pinch-off voltage, VP = value of VDS at
which drain current becomes constant and
equal to IDSS at VGS = 0V
Pinch-off occurs for V value less than V
DS P
when VGS is nonzero.
V (off) & V are equal in magnitude but
GS P
opposite sign
V (off) = -V
GS P

Pinch-Off & Cutoff Voltage

59
P-channel JFET operation
 Same as n-channel
JFET except required
negative VDD and
positive VGS.

60
JFET Transfer Characteristic
61
 The transfer characteristic of input-to-output is
not as straightforward in a JFET as it is in a BJT.

 In a BJT,  indicates the relationship between IB

(input) and IC (output).
 IC = IB


 In a JFET, the relationship of VGS (input) and ID

Control
(output) is a little more Variable
complicated:
constant

2
 V 
I D  I DSS  1  GS  Control Variable
JFET Transfer Characteristic 
 VP



62
Constant
 JFET Transfer Curve

This graph shows the value of ID for a given value of VGS.

When VGS = 0; ID = IDSS

When VGS = VGS (off) = VP; ID = 0 mA 63
 Step 1
2
 V 
I D  I DSS  1  GS 
 VP 
Solving for VGS = 0V ID = IDSS

Step 2
2
 V 
I D  I DSS  1  GS 
 VP 
Solving for VGS = Vp (VGS(off)) ID = 0A

Step 3
2
 
Plotting JFET Transfer Curve
V
Solving for V = 0V to V GS p
I D  I DSS  1  GS 
 VP 

64
MOSFET (Metal Oxide Semiconductor
Field-Effect Transistor)
Different from JFET – no pn junction
structure.
Gate of MOSFET is insulated from the
channel by silicon dioxide (SiO2) layer.
2 types – enhancement and depletion.

MOSFET
DEPLETION-TYPE MOSFET
 P-type material is formed
from silicon substrate.
 Source and Drain terminals
are connected through
metallic contacts to n-doped
region linked by n-channel.
 Gate connected to metal
contact surface but insulated
from n-channel by thin SiO2
layer – no direct connection
gate and channel of MOSFET.
 SiO is a dielectric which sets
2
up opposing electric fields
within the dielectric when
exposed to externally applied n-channel depletion-type MOSFET
field.
BASIC OPERATION &
CHARACTERISTICS @ VGS=0 V
 Gate-to-Source voltage is
set to 0 V.
 A voltage VDS is applied
across the Drain-to-Source
terminals.
 An attraction for positive
potential at Drain by free
electron of n-channel –
produce current through
channel.
 At V
GS = 0V, ID = IDSS
BASIC OPERATION &
CHARACTERISTICS @ VGS<0 V
 If VGS is set at a negative
voltage:
 Negative potential at Gate will
pressure electron towards p-
type substrate and attract holes
from substrate.
 Recombination between hole
and electron will occur – reduce
number of free electron in n-
channel for conduction.
 More negative the bias,
recombination rate is higher.
 ID is reduce with increasing
negative bias of VGS.
 At pinch-off voltage, VP, ID=0A
 For positive value of VGS:
 Positive Gate will draw additional electron from p-substrate
due to reverse leakage current and established new carrier
through the collisions between accelerating particles.
 I will increase at rapid rate – user must aware of I
D D
maximum current rating.
 Application of positive VGS has enhance the level of free
carriers in the channel.
 Region of positive gate voltage on drain or transfer curve is
called enhancement region while region between
saturation and cutoff is called depletion region.

BASIC OPERATION &

CHARACTERISTICS @ VGS>0 V
BASIC OPERATION &
CHARACTERISTICS
P-CHANNEL DEPLETION-TYPE
MOSFET
 Construction is reverse of n-channel.
 All voltage polarities and current direction are
reverse.
SYMBOL
ENHANCEMENT-TYPE MOSFET
 Primarydifference
between depletion-
type and
enhancement-type is
the absence of
channel between
Source and Drain
terminals.

N-channel enhancement-type MOSFET

V is set at 0 V and a voltage applied between
GS
Drain and Source.
 With V at positive voltage, V =0 V and
DS GS
terminal substrate (SS) connected to Source –
exist two (2) reverse-biased pn-junction
between n-doped region and p-substrate.
 It is not sufficient to have a large accumulation
of carriers (electron) at Drain and Source if a
path (channel) is fails to exist between both
terminals.
I = 0 A
D

BASIC OPERATION &

CHARACTERISTICS @ VGS=0 V
BASIC OPERATION &
CHARACTERISTICS VGS>0 V
 VDS and VGS>0 V:
 Positive potential at the Gate will
pressure the holes in p-sub along
the edge of SiO2 to enter deeper
p-sub.
 Result in a depletion region near
SiO2.
 Electron in p-sub (minority
carrier) attracted to positive Gate
and accumulate in the region near
the surface of SiO2 layer.
 As VGS increase in magnitude, the
concentration of electron
increases until eventually induced
n-type region to support current
flow between Drain and Source.
 The level of VGS that results in
significant increase in ID is called
threshold voltage, VT.
BASIC OPERATION &
CHARACTERISTICS VGS>VT
 VGS>VT:
 The density of free carriers in the
induced channel will increase -
increased ID.
 If increase VDS but VGS constant, ID
will saturate.
 VDG and Gate will become less and
less positive with respect to Drain.
 VDG=VDS-VGS
 Reduction in Gate-to-Drain voltage
will reduce the attractive forces for
free carriers (electron) – reduction in
channel width.
 Channel will reduce to pinch-off and a
saturation condition established.
 Any further increase in VDS at fixed
value of VGS will not affect the
saturation level of ID until breakdown
conditions are encountered.
BASIC OPERATION &
CHARACTERISTICS
 Saturation level for VDS is related to applied VGS
by:
 VDsat = VGS – VT
 VGS < VT, ID=0 A
 VGS > VT, ID=k(VGS-VT)2
P-CHANNEL ENHANCEMENT-
TYPE MOSFET
 Construction is reverse of n-channel.
 All voltage polarities and current direction are
reverse.
SYMBOL
INTRODUCTION
CHAPTER 5
TO OTHER
ELECTRONIC
DEVICES
BY
PN. ZAWIYAH BINTI MOKHTAR
ELECTRICAL ENGINEERING DEPARTMENT
POLYTECHNIC TUANKU SULTANAH BAHIYAH
An SCR consist of four layers of
alternating P and N type
semiconductor materials.

As the terminology indicates, the SCR

is a rectifier constructed of silicon
material with a third terminal for
control purposes.
Silicon Controlled Rectifier
(SCR)
Silicon was chosen because of its high
temperature and power capabilities.
PHYSICAL STRUCTURE &
SCHEMATIC DIAGRAM
In the normal "off" state, the device
restricts current to the leakage current.

When the gate-to-

cathode voltage exceeds a
certain threshold, the device turns "on"
and conducts current.

The device will remain in the "on" state

even after gate current is removed so
SCR MODES OF OPERATION
long as current through the device
remains above the holding current.
Once current falls below the holding
current for an appropriate period of
time, the device will switch "off".

 If the gate is pulsed and the current

through the device is below the
holding current, the device will remain
in the "off" state.

CONT’D
Mainly used in devices where the control
of high power, possibly coupled with high
voltage, is demanded.

 Suitable for use in medium to high-

voltage AC power control applications,
such as lamp dimming, regulators and
motor control.

SCRs and similar devices are used for

SCR APPLICATION
rectification of high power AC in high-
voltage direct current power transmission.
The DIAC, or 'diode for alternating
current', is a diode that
conducts current only after its break-
over voltage has been reached
momentarily.

The diac is basically a two-terminal

parallel-inverse combination of
semiconductor layers that permits
DIAC
triggering in either direction.
 A1

DIACA2
SCHEMATIC SYMBOL
DIACs are also called symmetrical
trigger diodes due to the symmetry of
their characteristic curve.

Because DIACs are bidirectional

devices, their terminals are not
labeled as anode and cathode but as
A1 and A2 or MT1 ("Main Terminal")
and MT2.
CONT’D
The diacs, because of their symmetrical
bidirectional switching characteristics, are
widely used as triggering devices in triac
phase control circuits employed for lamp
dimmer, heat control, universal motor
speed control etc.

DIAC APPLICATION
TRIAC, from Triode for Alternating
Current, is a genericized tradename for
an electronic component which can
conduct current in either direction when it is
triggered (turned on).

The triac is fundamentally a diac with a gate

terminal for controlling the turn-on conditions
of the bilateral device in either direction.

 For either direction the gate current can

TRIAC
control the action of the device in a manner
very similar to that demonstrated for an SCR.
TRIAC SCHEMATIC SYMBOL
 It can be triggered by either a positive or a
negative voltage being applied to
its gate electrode.

 Once triggered, the device continues to conduct

until the current through it drops below a certain
threshold value, the holding current, such as at
the end of a half-cycle of alternating current(AC)
mains power.

 This makes the TRIAC a very convenient switch

CONT’D
for AC circuits, allowing the control of very large
power flows with milliampere-scale control
currents.
Low power TRIACs are used in many
applications such as light dimmers,
speed controls for electric fans and
other electric motors.

In the modern computerized control

circuits of many
household small and major
appliances.
TRIAC APPLICATION
A unijunction transistor (UJT) is
an electronic semiconductor device
that has only one junction.

UJT (UNIJUNCTION
TRANSISTOR)
A slab of lightly doped (increased
resistance characteristic) n-type silicon
material has two base contacts attached
to both ends of one surface and an
aluminum rod alloyed to the opposite
surface.
The p-n junction of the device is
formed at the boundary of the
aluminum rod and the n-type silicon
slab.

The single p-n junction accounts for

the terminology unijunction.
The most important applications of UJTs
or PUTs is to trigger
thyristors (SCR, TRIAC, etc.).

DC voltage can be used to control a UJT

circuit such that the "on-period"
increases with an increase in the DC
control voltage. This application is
important for large AC current control.

UJT
UJTs APPLICATION
can also be used to measure
magnetic flux.