C
The BJT Bipolar Junction Transistor
Note: It will be very helpful to go through the Analog Electronics Diodes Tutorial to get information on doping, n-type and p-type materials. np-
The Two Types of BJT Transistors: npn
E n p n C B B
Schematic Symbol
pnp
C E p n p C B B E
Schematic Symbol
Cross Section
Cross Section
Collector doping is usually ~ 106 Base doping is slightly higher ~ 107 108 Emitter doping is much higher ~ 1015
BJT Relationships - Equations
IE E VBE + B IB + VCE + IC C VBC E + VEB B IE + VEC IC C + IB VCB
npn
IE = IB + IC VCE = -VBC + VBE
pnp
IE = IB + IC VEC = VEB - VCB
Note: The equations seen above are for the transistor, not the circuit.
DC F and DC E
F = Common-emitter current gain CommonE = Common-base current gain CommonF = IC IB E = IC IE
The relationships between the two parameters are: E= F F+1 F= E 1-E
Note: E and F are sometimes referred to as Edc and Fdc because the relationships being dealt with in the BJT are DC.
BJT Example
Using Common-Base NPN Circuit Configuration CommonC Given: IB = 50 Q A , IC = 1 mA VCB B VBE
+ _ + _
IC IB
Find:
IE , F , and E
Solution: IE E IE = IB + IC = 0.05 mA + 1 mA = 1.05 mA F = IC / IB = 1 mA / 0.05 mA = 20 E = IC / IE = 1 mA / 1.05 mA = 0.95238 E could also be calculated using the value of F with the formula from the previous slide. E= F = 20 = 0.95238 F+1 21
Modes of Operation
Active:
Most important mode of operation Central to amplifier operation The region where current curves are practically flat
Saturation: Barrier potential of the junctions cancel each other out
causing a virtual short
Cutoff:
Current reduced to zero Ideal transistor behaves like an open switch
* Note: There is also a mode of operation called inverse active, but it is rarely used.
Three Types of BJT Biasing
Biasing the transistor refers to applying voltage to get the transistor to achieve certain operating conditions.
CommonCommon-Base Biasing (CB) :
input
= VEB & IE
output = VCB & IC CommonCommon-Emitter Biasing (CE): input = VBE & IB
output = VCE & IC CommonCommon-Collector Biasing (CC): input = VBC & IB
output = VEC & IE
CommonCommon-Base
Circuit Diagram: NPN Transistor C IC
VCE
IE
VCB The Table Below lists assumptions that can be made for the attributes of the common-base biased circuit commonin the different regions of operation. Given for a Silicon NPN transistor. Region of Operation Active Saturation Cutoff IC FIB Max ~0 VCE VBE IB
+ _
VBE
B VCB VCB 0V VBE C-B Bias E-B Bias
=VBE+VCE ~0.7V ~0V =VBE+VCE
Rev. Fwd.
~0.7V -0.7V<VCE<0 Fwd. Fwd. 0V 0V Rev. None /Rev.
+ _
CommonCommon-Base
Although the Common-Base configuration is not the most Commoncommon biasing type, it is often helpful in the understanding of how the BJT works. Emitter-Current Curves EmitterIC Saturation Region Active Region IE
Cutoff IE = 0 VCB
CommonCommon-Emitter
Circuit Diagram VCE IC
+ _
Collector-Current Curves CollectorIC IB
Active Region
VC
C
Region of Description Operation Active Small base current controls a large collector current
IB
VCE
Saturation Region Cutoff Region IB = 0
Saturation VCE(sat) ~ 0.2V, VCE increases with IC Cutoff Achieved by reducing IB to 0, Ideally, IC will also equal 0.
CommonCommon-Collector
Emitter-Current Curves EmitterThe CommonCommonCollector biasing circuit is basically equivalent to the commoncommon-emitter biased circuit except instead of looking at IC as a function of VCE and IB we are looking at IE. Also, since E ~ 1, and E = IC/IE that means IC~IE IE
Active Region
IB
VCE
Saturation Region Cutoff Region IB = 0
Breakdown Voltage
The maximum voltage that the BJT can withstand.
BVCEO =
The breakdown voltage for a common-emitter commonbiased circuit. This breakdown voltage usually ranges from ~20-1000 Volts. ~20The breakdown voltage for a common-base biased commoncircuit. This breakdown voltage is usually much higher than BVCEO and has a minimum value of ~60 Volts. Breakdown Voltage is Determined By: The Base Width Material Being Used Doping Levels Biasing Voltage
BVCBO =
