Electronic devices articles from across Nature Portfolio

An energy-efficient hybrid memory that incorporates both ferroelectric capacitors and analogue memristors can accelerate on-chip inference and training.

A plasmonic printing technology is developed to enable rapid, room-temperature, scalable fabrication of all-metal oxide thin-film transistors and circuits.

Organic thin-film tunnel transistors with subthreshold swings as low as 24.2 mV dec⁻¹ can be created with the help of a molecular decoupling layer that lowers the energy barrier to tunnelling.

A 0.8-nm-thick CoFe ultrathin film was deposited on a MgO tunneling barrier by means of cryogenic temperature sputtering. The cryogenic temperature sputtering at 100 K effectively suppressed island-like initial growth of CoFe without hampering grain-to-grain epitaxy, while CoFe deposited at 300 K exhibited rough and mixed interfaces. The flat and sharp interfaces in CoFe ultrathin films deposited at 100 K resulted in improved properties such as low magnetic damping, high tunneling magnetoresistance, and clear perpendicular magnetic anisotropy. Furthermore, the clear interfaces were maintained even after annealing at 673 K, indicating high thermal stability.

A capillary flow printing technique can be used to fabricate printed carbon nanotube thin-film transistors with submicrometre channel lengths on rigid or flexible substrates.

Viscoplastic surface effects in polymeric elastomers drive the development of sealing platforms with high hermeticity and large stretchability to safeguard stretchable electronics from degradation.

A six-stack hybrid complementary transistor technology that uses n-type indium oxide and a p-type organic semiconductor as channel materials can be used to build inverters that exhibit a gain of 94.84 V V⁻¹ and a power consumption of 0.47 µW.

A three-dimensional tin halide perovskite can be stabilized by incorporating methylammonium chloride into the perovskite structure and used to create p-type thin-film transistors with a hole mobility of over 80 cm² V⁻¹ s⁻¹.

Researchers developed a nano-resolution, multi-material, and multi-layer printing method for the colloidal nanocrystal library. The electrohydrodynamic technique is enabled by in-situ ligand treatments to achieve fully printed infrared photodiodes.

An energy-efficient hybrid memory that incorporates both ferroelectric capacitors and analogue memristors can accelerate on-chip inference and training.

A plasmonic printing technology is developed to enable rapid, room-temperature, scalable fabrication of all-metal oxide thin-film transistors and circuits.

Organic thin-film tunnel transistors with subthreshold swings as low as 24.2 mV dec⁻¹ can be created with the help of a molecular decoupling layer that lowers the energy barrier to tunnelling.

Rapid identification of pathogenic viruses remains a critical challenge. A recent study advances this frontier by demonstrating a fully integrated memristor-based hardware system that accelerates genomic analysis by a factor of 51, while reducing energy consumption to just 0.2% of that required by conventional computational methods.

Sonochemical exfoliation of synthesized bulk black phosphorus crystals provides a route to produce high-quality, narrow and clean black phosphorus nanoribbons for practical applications in electronic and optoelectronic fields.