AH1

High Dynamic Range Amplifier Product Features

250 4000 MHz +41 dBm OIP3 3 dB Noise Figure 13.5 dB Gain +22 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package Single +5 V Supply MTTF > 100 years

Product Description
The AH1 is a high dynamic range amplifier in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 C. The AH1 is available in the environmentally-friendly lead-free/green/RoHScompliant SOT-89 package. The broadband amplifier uses a high reliability GaAs MMIC technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AH1 will work for other applications within the 250 to 4000 MHz frequency range such as fixed wireless, WLAN, and WiBro.

Functional Diagram
GND 4

1 RF IN

2 GND

3 RF OUT

Applications
Mobile Infrastructure CATV / DBS W-LAN / Wi-Bro / WiMAX RFID Defense / Homeland Security Fixed Wireless

Function Input Output / Bias Ground

Pin No. 1 3 2, 4

Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure (3) Operating Current Range Supply Voltage

Typical Performance (4)

Units
MHz MHz dB dB dB dBm dBm dB mA V

Min
250 12.4

Typ
800 13.5 8 15 +21.7 +41 3.0 150 5

Max
4000

Parameter
Frequency S21 S11 S22 Output P1dB Output IP3 (2) IS-95 Channel Power (5) Noise Figure Supply Voltage Device Current

Units
MHz dB dB dB dBm dBm dB dB V mA 900 14.2 -21 -14 +21.7 +42 +15.5 3.2

Typical
1900 12.2 -14 -13 +22 +41 +16.5 3.3 5 150 2140 12.0 -21 -11 +22 +40 3.3

+37 120

180

1. Test conditions unless otherwise noted: T = 25 C, 50 system. 2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Noise figure can be optimized by matching the input for optimal return loss. 4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3. 5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.

Not Recommended for New Designs

Recommended Replacement Part: TQP3M9007 Ordering Information
Part No.
AH1-G

Absolute Maximum Rating

Parameter
Storage Temperature Supply Voltage RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth
Junction Temperature for >106 hours MTTF Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice

Rating
-55 to +150 C +6 V +10 dBm +160 C 59 C / W

Description
High Dynamic Range Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)

Standard T/R size = 1000 pieces on a 7 reel.

TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com

Page 1 of 5

May 2012

AH1
High Dynamic Range Amplifier Typical Device Data
S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25 C, unmatched device in a 50 ohm system) Input return loss can be improved with the appropriate input matching network shown later in this datasheet.

OIP3 Load Pull Circles 900 MHz

IP3=35 IP3=36 IP3=37 IP3=38 IP3=39 IP3=41 VSWR=1.5 VSWR=2 VSWR=3 VSWR=4 VSWR=5

S-Parameters (VD = +5 V, ID = 150 mA, T = 25 C, calibrated to device leads)

Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)

50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000

-2.65 -7.97 -8.57 -8.47 -8.24 -7.79 -7.18 -6.55 -6.03 -5.69 -5.55 -5.68 -5.86

-29.52 -44.15 -60.61 -80.72 -100.99 -120.81 -138.15 -152.70 -164.30 -173.54 176.22 166.67 153.06

17.80 15.28 14.91 14.60 14.22 13.80 13.27 12.69 12.11 11.57 11.12 10.76 10.40

164.25 158.50 147.54 134.66 121.38 108.59 96.13 84.26 73.25 62.88 52.70 42.57 31.81

-24.29 -21.31 -21.11 -21.11 -21.21 -21.21 -21.41 -21.62 -21.83 -21.99 -22.10 -22.16 -22.27

45.18 6.75 -3.83 -10.90 -17.00 -23.01 -28.54 -33.67 -38.35 -42.48 -46.41 -50.57 -55.21

-8.25 -19.01 -25.15 -29.26 -30.76 -29.83 -29.30 -29.12 -28.24 -26.58 -25.60 -26.12 -29.48

-39.80 -65.37 -69.25 -84.69 -115.12 -88.78 -94.19 -136.07 -112.00 -97.44 -90.19 -87.80 -82.67

Device S-parameters are available for download off of the website at: http://www.tqs.com

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 2 of 5 May 2012

AH1
High Dynamic Range Amplifier Application Circuit: 800 2500 MHz (AH1-PCB)
Vcc = +5 V

Typical RF Performance at 25 C
Frequency S21 Gain S11 Input R.L. S22 Output R.L. Output P1dB Output IP3
(+5 dBm / tone, 10 MHz spacing)

ID=C5 C=56 pF All passive components are of size 0603 unless otherwise noted. Component C1 is shown in the silkscreen but is not used for this configuration. Z0=22 Ohm EL=15.2 Deg F0=0.9 GHz ID=Q1 NET="AH1" ID=C4 L=12 nH

MHz 900 1900 2140 dB 14.2 12.2 12.0 dB -21 -14 -21 dB -14 -13 -11 dBm +21.7 +22 +22 dBm +42 +41 +40

ID=C2 C=56 pF

ID=C6 C=56 pF ID=C3 L=5.6 nH

IS-95 Channel Power

(@-45 dBc ACPR, 9 channels fwd)

dBm +15.5 +16.5 dB 3.2 3.3 3.3 +5V @ 150mA

Noise Figure Device Bias

Circuit Board Material: .062 total thickness with a .014 FR-4 top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, 50 Microstrip line details: width = .025.

Gain and Output IP3 vs. Temperature

Frequency = 800, 801 MHz @ Pout =5dBm

15 14
Gain (dB)

45
Output IP3 (dBm)

44 43 42 Gain OIP3 41 40 -40 -15 10 35 60 85

Temperature (oC)

13 12 11 10

P1dB and Noise Figure vs. Temperature

23
P1dB (dBm)

Frequency = 800 MHz

4 3 2
P1dB NF

22 21 20 19 -40 -15 10 35 60 85
Temperature (oC)

1 0

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 3 of 5 May 2012

Noise Figure (dB)

AH1
High Dynamic Range Amplifier 250 - 650 MHz Reference Design
Gain / Return Loss
16 0
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
+5V C=1000 pF

Freq. Gain S11 S22 P1dB OIP3 NF Bias

MHz dB dB dB dBm dBm dB

Gain (dB)

14

-10

S11, S22 (sB)

250 14.8 -10 -19

450 650 14.5 13.8 -36 -11 -17 -13 +22 +42 2.8 2.8 3.2 +5V @ 150mA

15

-5

L=82 nH NET="AH1" L=15 nH C=1000 pF

13

-15

12

-20

11 0.2 0.3 0.4 0.5 Frequency (GHz) 0.6 0.7

-25

900 MHz Reference Design

Freq. ain S11 S22 P1dB OIP3 NF Bias MHz dB dB dB dBm dBm dB 800 900 1000 13.7 13.7 13.6 -13 -16 -18 -13 -14 -15 +22 +41 2.5 +5V @ 150mA
Gain / Return Loss
15 DB(|S(2,1)|) (L) 14 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) -5
L=100 nH

+5 V C=100 pF

Gain (dB)

13

-10

S11, S22 (dB)

C=100 pF

NET="AH1"

C=100 pF

12

-15

11

-20
L=12 nH

10 0.7 0.8 0.9 Frequency (GHz) 1 1.1

-25

2350 MHz Reference Design

Freq. Gain S11 S22 P1dB OIP3 NF Bias GHz dB dB dB dBm dBm dB 2.3 12.0 -24 -12 2.35 2.4 12.0 11.9 -40 -25 -13 -14 +22 +41 3.7 +5V @ 150mA
Gain / Return Loss
13
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
+5V

C=56 pF

12

-5
S11, S22 (sB)

Gain (dB)

11

-10

TLINP Z0=50 Ohm L=250 mil Eeff=3.4 Loss=0 F0=0 GHz

L=22 nH NET="AH1"

C=56 pF

10

-15

-20

C=1.2 pF

8 2.1 2.2 2.3 2.4 Frequency (GHz) 2.5 2.6

-25

3500 MHz Reference Design

Freq. Gain S11 S22 P1dB OIP3 NF Bias GHz dB dB dB dBm dBm dB 3.5 3.8 9.9 9.5 -18 -14 -17 -16 +21.6 +41 4.8 4.3 4.1 +5V @ 150mA 3.3 9.8 -10 -16
Gain / Return Loss
11 0
+5V C=18 pF

DB(|S(1,1)|) (R)
10

DB(|S(2,2)|) (R)

DB(|S(2,1)|) (L)
-5
S11, S22, (dB)
TLINP Z0=80 Ohm L=50 mil Eeff=3.4 Loss=0 F0=0 GHz

L=12 nH NET="AH1"

Gain (dB)

-10

C=18 pF

-15

-20

C=1 pF

6 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4

-25

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 4 of 5 May 2012

AH1
High Dynamic Range Amplifier AH1-G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.

Outline Drawing
AH1G XXXX-X

Product Marking
The AH1-G will be marked with an AH1G designator. An alphanumeric lot code (XXXX-X) is also marked below the part designator on the top surface of the package.

ESD / MSL Information

ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: MSL Rating: Standard:

Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 Level 1 at +260 C convection reflow JEDEC Standard J-STD-020

Land Pattern

Mounting Config. Notes

1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135) diameter drill and have a final plated thru diameter of .25 mm (.010). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 5 of 5 May 2012