Lecture #31
ANNOUNCEMENTS
TAs will hold a review session on Thursday May 15:
2-5 PM, 277 Cory
Final Exam will take place on Friday May 23:
12:30-3:30 PM, Sibley Auditorium (Bechtel Bldg.)
Closed book; 7 pgs of notes + calculator allowed
OUTLINE
Review of Fundamental Concepts
Spring 2003
EE130 Lecture 31, Slide 1
Intrinsic Carrier Concentration ni = N c N v e
E g / kT
conduction
ni 1010 cm-3 at room temperature
Spring 2003
EE130 Lecture 31, Slide 2
Charge-Carrier Concentrations
ND: ionized donor concentration (cm-3)
NA: ionized acceptor concentration (cm-3)
Note: Carrier concentrations depend
on net dopant concentration (ND - NA) !
Spring 2003
EE130 Lecture 31, Slide 3
increasing electron energy
increasing hole energy
Energy Band Diagram
electron kinetic energy
Ec
Ev
hole kinetic energy
distance in semiconductor
Spring 2003
EE130 Lecture 31, Slide 4
Fermi Function
f (E) =
1
1 + e ( E EF ) / kT
f ( E ) e ( E E F ) / kT if E-E F > 3kT
Spring 2003
EE130 Lecture 31, Slide 5
Relationship between EF and n,p
n = ni e ( E F Ei ) / kT
= N c e ( Ec E F ) / kT
p = ni e ( Ei E F ) / kT
= N v e ( E F Ev ) / kT
Spring 2003
EE130 Lecture 31, Slide 6
Free Carriers in Semiconductors
Three primary types of carrier action occur
inside a semiconductor:
drift
diffusion
kT
q
recombination-generation
Spring 2003
EE130 Lecture 31, Slide 7
Net Generation Rate
The net generation rate is given by
2
p n
ni np
=
=
t t p (n + n1 ) + n ( p + p1 )
where n1 ni e ( ET Ei ) / kT and p1 ni e ( Ei ET ) / kT
ET = trap - state energy level
Spring 2003
EE130 Lecture 31, Slide 8
Drift and Resistivity
Electrons and holes moving under the influence of an
electric field can be modelled as quasi-classical
particles with average drift velocity
|vd| =
The conductivity of a semiconductor is dependent on
the carrier concentrations and mobilities
= qnn + qpp
Resistivity
Spring 2003
1
qn n + qp p
EE130 Lecture 31, Slide 9
Mobility Dependence on Doping
1600
1400
E lectrons
1000
-1
-1
Mobility (cm V s )
1200
=
=
phonon
phonon
impurity
impurity
800
600
400
H o les
200
0
1E 14
1E 15
1E 16
1E 17
1E 18
T otal
Im p urity
C on ce nra tio nN(a
to m s
Total
Doping
Concentration
A + ND
Spring 2003
1E 19
1E 20
-3
cm -3) )
(cm
EE130 Lecture 31, Slide 10
Total Current
J = JN + JP
JN = JN,drift + JN,diff = qnn
JP = JP,drift + JP,diff = qpp
Spring 2003
qDN
qDP
dn
dx
dp
dx
EE130 Lecture 31, Slide 11
Electrostatic Variables
V=
1
( Ereference Ec )
q
1 dE
= dV
=
dx q dx
d
=
dx
Spring 2003
EE130 Lecture 31, Slide 12
Continuity
Equations:
Minority
Carrier
Diffusion
Equations:
Spring 2003
n 1 J n ( x ) n
=
+ GL
n
t q x
p
1 J p ( x ) p
=
+ GL
p
t
q x
n p
t
= DN
2 n p
x 2
n p
+ GL
pn
1 2 pn pn
= DP
+ GL
p
t
q x 2
EE130 Lecture 31, Slide 13
Work Function
0: vacuum energy level
M: metal work function
Spring 2003
S: semiconductor work function
EE130 Lecture 31, Slide 14
Schottky Diode
VA > 0
W=
C =
Bn = M
2 s (Vbi V A )
qN D
s
W
VA < 0
I = AT 2 J S (e qV A / kT 1)
where J S = 120e q B / kT A/cm 2
Fermi level splits into two levels (EFM and EFS) separated by qVA
Spring 2003
EE130 Lecture 31, Slide 15
pn Junction Electrostatics
Spring 2003
EE130 Lecture 31, Slide 16
pn Junction Electrostatics, VA 0
Built-in potential Vbi (non-degenerate doping):
Vbi =
kT N A kT N D kT N A N D
+
=
ln
ln
ln
q ni q ni q ni 2
Depletion width W :
W = x p + xn =
xp =
Spring 2003
1
2 s
1
(Vbi V A )
+
q
N A ND
ND
W
N A + ND
xn =
NA
W
N A + ND
EE130 Lecture 31, Slide 17
Avalanche Breakdown Mechanism
High E-field:
VBR
if VBR >> Vbi
2qN
increases slightly with N:
For 1014 cm-3 < N < 1018 cm-3,
Small E-field:
Spring 2003
crit
s crit
105 V/cm <
crit
< 106 V/cm
EE130 Lecture 31, Slide 18
Law of the Junction
The voltage VA applied to a pn junction falls mostly across
the depletion region (assuming that low-level injection
conditions prevail in the quasi-neutral regions).
We can draw 2 quasi-Fermi levels in the depletion region:
p = ni e ( Ei FP ) / kT
n = ni e ( FN Ei ) / kT
pn = ni2e( Ei FP ) / kT e( FN Ei ) / kT
= ni2e( FN FP ) / kT
pn = ni2e qVA / kT
Spring 2003
EE130 Lecture 31, Slide 19
Excess Carrier Concentrations at xp, xn
p-side
n-side
p p ( x p ) = N A
nn ( xn ) = N D
ni2 e qVA / kT
n p ( x p ) =
NA
ni2 e qVA / kT
p n ( xn ) =
ND
= n p 0 e qVA / kT
= pn 0 e qVA / kT
ni2 qVA / kT
n p ( x p ) =
e
1
NA
Spring 2003
ni2 qVA / kT
pn ( xn ) =
e
1
ND
EE130 Lecture 31, Slide 20
10
pn Diode I-V Characteristic
dn p ( x' ' )
p-side: J n = qDn
dx ' '
n-side: J p = qD p
J = Jn
x= x p
=q
Dn
n p 0 (e qVA
Ln
Dp
dpn ( x' )
=q
pn 0 (e qVA
dx'
Lp
+ Jp
x = xn
= Jn
x =0
D
D p qVA
J = qni2 n +
( e
L
N
L
N
p D
n A
Spring 2003
+ Jp
kT
kT
1)e x '' Ln
kT
1)e
x' Lp
x = 0
1)
EE130 Lecture 31, Slide 21
pn Junction Capacitance
2 types of capacitance associated with a pn junction:
1. CJ
depletion capacitance
CJ
2. CD
dQdep
dVA
=A
s
W
diffusion capacitance (due to variation of
stored minority charge in the quasi-neutral
regions)
For a one-sided p+n junction (QP >> QN ):
CD =
Spring 2003
p I DC
dQ
dI
= p
= pG =
dV A
dV A
kT / q
EE130 Lecture 31, Slide 22
11
Deviations from the Ideal I-V Behavior
Resulting from
recombination/generation in the depletion region
series resistance
high-level injection
Spring 2003
EE130 Lecture 31, Slide 23
Transient Response of pn Diode
Because of CD, the voltage across the pn junction
depletion region cannot be changed instantaneously.
(The delay in switching between the ON and OFF states is due to
the time required to change the amount of excess minority carriers
stored in the quasi-neutral regions.)
Turn-off transient:
Spring 2003
EE130 Lecture 31, Slide 24
12
Minority-Carrier Injection & Collection
Under forward bias, minority carriers are injected
into the quasi-neutral regions of the diode.
Current flowing across junction is comprised of hole and
electron components
Under reverse bias, minority carriers are collected
into the quasi-neutral regions of the diode. (Minority
carriers within a diffusion length of the depletion
region will diffuse into the depletion region and then
be swept across the junction by the electric field)
Current flowing depends on the rate at which minority
carriers are supplied
Spring 2003
EE130 Lecture 31, Slide 25
MOS Band Diagrams (n-type Si)
Decrease VG (toward more negative values)
-> move the gate energy-bands up, relative to the Si
decrease VG
Accumulation
VG > VFB
Electrons
accumulate at
surface
Spring 2003
decrease VG
Depletion
VG < VFB
Electrons
repelled
from surface
EE130 Lecture 31, Slide 26
Inversion
VG < VT
Surface
becomes
p-type
VG = VFB + Vox + s
13
Biasing Conditions for p-type Si
increase VG
VG = VFB
VG < VFB
Spring 2003
increase VG
VT > VG > VFB
EE130 Lecture 31, Slide 27
Wd =
2 Si s
qN A
MOS Charge & Capacitance (p-type Si)
Qacc = Cox (VG VFB )
accumulation
depletion
inversion
C=
VG
VFB
dQs
dVG
VT
Ideal C-V curve
Qinv = Cox (VG VT )
slope = -Cox
VFB = MS
Cox
QF
Cox
2qN A Si (2 B )
VT = VFB + 2 B +
Cox
Spring 2003
VG
VFB
accumulation
VT
depletion
inversion
EE130 Lecture 31, Slide 28
14
VT Adjustment by Back Biasing
In some IC products, VT is dynamically adjusted by
applying a back bias:
When a MOS capacitor is biased into inversion, a pn junction
exists between the surface and the bulk.
If the inversion layer contacts a heavily doped region of the
same type, it is possible to apply a bias to this pn junction
N+ poly-Si
+ + + + + + + +
SiO2
N+
- - - - - - - - -
p-type Si
Spring 2003
VG biased so surface is inverted
Inversion layer contacted by N+ region
Bias VC applied to channel
Reverse bias VB-VC applied btwn
channel & body
EE130 Lecture 31, Slide 29
Effect of VCB on s and VT
Application of reverse bias -> non-equilibrium
2 Fermi levels (one for n-region, one for p-region)
Separation = qVBC s increased by VC
Reverse bias widens Wd, increases Qdep
Qinv decreases with increasing VCB, for a given VGB
VT = VFB + VC + 2 B +
Spring 2003
2qN A Si (2 B + VCB )
Cox
EE130 Lecture 31, Slide 30
15
