AN2794

Application note
1 kW dual stage DC-AC converter based on the STP160N75F3
Introduction
This application note provides design guidelines and performance characterization of the
STEVAL-ISV001V1 demonstration board.
This board implements a 1 kW dual stage DC-AC converter, suitable for use in batterypowered uninterruptible power supplies (UPS) or photovoltaic (PV) standalone systems.
The converter is fed by a low DC input voltage varying from 20 V to 28 V, and is capable of
supplying up to 1 kW of output power on a single-phase AC load. These features are
possible thanks to a dual stage conversion topology that includes an efficient step-up pushpull DC-DC converter, which produces a regulated high-voltage DC bus and a sinusoidal HBridge PWM inverter to generate a 50 Hz, 230 Vrms output sine wave. Other key features of
the system proposed are high power density, high switching frequency and efficiency
greater than 90% over a wide output load range
Figure 1.

January 2012

1 kW DC-AC converter prototype

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www.st.com

Contents

AN2794

Contents
1

System description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Design considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1

Layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Schematic description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Experimental results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Appendix A Component list. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Appendix B Product technical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
7

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Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

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AN2794

List of tables

List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.

System specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Push-pull converter specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
HF transformer design parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Output inductor design parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Bill of material (BOM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

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List of figures

AN2794

List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.

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1 kW DC-AC converter prototype . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Block diagram of an offline UPS system. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Possible use of a DC-AC converter in standalone PV conversion . . . . . . . . . . . . . . . . . . . . 5
Block diagram of the proposed conversion scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Push-pull converter typical waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Distribution of converter losses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Distribution of losses with 3 STP160N75F3s paralleled . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Component placement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Top layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Bottom layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Characteristic waveforms (measured at 24 V input voltage and 280 W resistive load) . . . 26
Characteristic waveforms (measured at 28 V input voltage and 1000 W resistive load) . . 26
MOSFET voltage (ch4) and current (ch3) without RC snubber . . . . . . . . . . . . . . . . . . . . . 27
MOSFET voltage (ch4) and current (ch3) with RC snubber . . . . . . . . . . . . . . . . . . . . . . . . 27
Rectifier diode current (ch3) and voltage (ch4) without RDC snubber . . . . . . . . . . . . . . . . 27
Rectifier diode current (ch3) and voltage (ch4) with RDC snubber. . . . . . . . . . . . . . . . . . . 27
Ch1, ch3 MOSFETs drain current, ch2, ch4 MOSFET drain-source voltage . . . . . . . . . . . 28
Startup, ch2, ch3 inverter voltage and current, ch4 DC bus voltage . . . . . . . . . . . . . . . . . 28
DC-DC converter efficiency with 20 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC-DC converter efficiency with 22 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC-DC converter efficiency with 24 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC-DC converter efficiency with 26 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC-DC converter efficiency with 28 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Converter efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Technical specification for 1.5 mH 2.5 A inductor L4 (produced by MAGNETICA) . . . . . . 35
Technical specification for 1 kW, 100 kHz switch mode power transformer TX1
(produced by MAGNETICA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Dimensional drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

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System description

System description
In a UPS system, as shown in Figure 2, a DC-AC converter is always used to convert the
DC power from the batteries to AC power used to supply the load. The basic scheme also
includes a battery pack, a battery charger which converts AC power from the grid into DC
power, and a transfer switch to supply the load from the mains or from the energy storage
elements if a line voltage drop or failure occurs.
Figure 2.

Block diagram of an offline UPS system

DC/AC

AC/DC

SWITCH

Battery

Another application where a DC-AC converter is always required is shown in the block
diagram of Figure 3. In this case, the converter is part of a conversion scheme commonly
used in standalone photovoltaic systems. An additional DC-DC converter operates as a
battery charger while performing a maximum power point tracking algorithm (MPPT), which
is necessary to maximize the energy yield from the PV array. The battery pack is always
present to store energy when solar radiation is available and release it at night or during
hours of low insolation.
Figure 3.

Possible use of a DC-AC converter in standalone PV conversion

DC/DC
Battery
Charger
+
MPPT

DC/AC

Batteries

LC Filter
Load

A possible implementation of an isolated DC-AC converter, which can be successfully used

in both the above mentioned applications, is given in the block diagram of Figure 4. It
consists of three main sections:
1.

The DC-DC converter

2.

The DC-AC converter

3.

The power supply section

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System description
Figure 4.

AN2794
Block diagram of the proposed conversion scheme
3TEP UPSTAGE0USH 0ULL

)NVERTER3TAGE( "RIDGE
34'7.#7$

340.&
48

$

$
:

6 IN

#
$

-

:

,

$

6 OUT

,
:

:

-

?
3'

344(2

34&LITE

.
,$

6 0OWER

3UPPLY
6 3ECTION

,
34..&,

!-V

The DC-DC section is a critical part of the converter design. In fact, the need for high overall
efficiency (close to 90% or higher) together with the specifications for continuous power
rating, low input voltage range leading to high input current, and the need for high switching
frequency to minimize weight and size of passive components, makes it a quite challenging
design.
Due to the constraints given by the specifications given in Table 1, few topology solutions
are suitable to meet the efficiency target. Actually, since the input voltage of the DC-AC
converter must be at least equal to 350 V, it is not feasible to use non-isolated DC-DC
converters. Moreover, the output power rating prevents the use of single switch topologies
such as the flyback and the forward. Among the remaining isolated topologies, the half
bridge and full bridge are more suitable for high DC input voltage applications and also
characterized by the added complexity of gate drive circuitry of the high side switches.
Table 1.

System specifications
Specification

Value

Nominal input voltage

24 V

Output voltage

230 Vrms, 50 Hz

Output power

1kW

Efficiency

90%

Switching frequency

100 kHz (DC-DC); 16 kHz (DC-AC)

Due to such considerations, the push-pull represents the most suitable choice. This
topology features two transistors on the primary side and a center tapped high frequency
transformer, as shown in the step-up section in Figure 4. It is quite efficient at low input
voltage making it widely used in battery powered UPS applications. Both power devices are
ground referenced with consequent simple gate drive circuits. They are alternatively turned

6/39

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AN2794

System description
on and off in order to transfer power to each primary of the center tapped transformer.
Contemporary conduction of both devices must be avoided by limiting the duty cycle value
of the constant frequency PWM modulator to less than 0.5. The PWM modulator should also
prevent unequal ON times for the driving signals since this would result in transformer
saturation caused by the "Flux Walking" phenomenon.
The basic operation is similar to a forward converter. In fact, when a primary switch is active,
the current flows through the rectifier diodes, charging the output inductor, while when both
the switches are off, the output inductor discharges. It is important to point out that the
operating frequency of the output inductor is twice the switching frequency.
A transformer reset circuit is not needed thanks to the bipolar flux operation, which also
means better transformer core utilization with respect to single-ended topologies.
The main disadvantage of the push-pull converter is the breakdown voltage of primary
power devices which has to be higher than twice the input voltage. In fact, when voltage is
applied to one of the two transformer primary windings by the conduction of a transistor, the
reflected voltage across the other primary winding puts the drain of the off state transistor at
twice the input voltage with respect to ground. This is the reason why push-pull converters
are not suitable for high input voltage applications.
For the above mentioned reasons, the voltage fed push-pull converter, shown in Figure 4, is
chosen to boost the input voltage from 24 V to a regulated 350 V, suitable for optimal
inverter operation. The high voltage conversion ratio can be achieved by proper transformer
turns ratio design, taking into account that the input to output voltage transfer function is
given by:
Equation 1
Vout = 2

N2
DVin
N1

The duty cycle is set by a voltage mode PWM regulator (SG3525) to keep a constant output
DC bus voltage. This voltage is then converted into AC using a standard H-bridge converter
implemented with four ultrafast switching IGBTs in PowerMESH technology, switching at
16 kHz. The switching strategy, based on PWM sinusoidal modulation, is implemented on
an 8-bit ST7lite39 microcontroller unit. This allows the use of a simple LC circuit to obtain a
high quality sine wave in terms of harmonic content.
The power supply section consists of a buck-boost converter to produce a regulated 15 V
from a minimum input voltage of 4 V. The circuit can be simply implemented by means of a
L5973 device, characterized by an internal P-channel DMOS transistor and few external
components. In this way, it is possible to supply all the driving circuits and the PWM
modulator. A standard linear regulator, L7805, provides 5 V supply to the microcontroller
unit.

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Design considerations

AN2794

Design considerations
The basic operation of a voltage fed push-pull converter is shown in Figure 5, where
theoretical converter waveforms are highlighted. In practice, significant overvoltages across
devices M1, M2 and across the four rectifier diodes are observed in most cases due to the
leakage inductance of the high frequency transformer. As a consequence, the breakdown
voltage of primary devices must be greater than twice the input voltage, and the use of
snubbing and/or clamping circuits is often helpful.
Special attention has to be paid to transformer design, due to the difficulties in minimizing
the leakage inductance and implementing low-voltage high-current terminations. Moreover,
imbalance in the two primary inductance values must be avoided both by symmetrical
windings and proper printed circuit board (PCB) layout. While transformer construction
techniques guarantee good symmetry and low leakage inductance values, asymmetrical
layout due to inappropriate component placement can be the source of different PCB trace
inductances. Whatever the cause of a difference in peak current through the switching
elements, transformer saturation in voltage mode push-pull converters can occur in a few
switching cycles with catastrophic consequences.
Figure 5.

8/39

Push-pull converter typical waveforms

Doc ID 14827 Rev 2

AN2794

Design considerations
Starting from the specifications in Table 2, a step-by-step design procedure and some
design hints to obtain a symmetrical layout are given below.
Table 2.

Push-pull converter specifications

Specification

Symbol

Value

Nominal input voltage

Vin

24 V

Maximum input voltage

Vinmax

28 V

Minimum input voltage

Vinmin

20 V

Nominal output power

Pout

1000 W

Nominal output voltage

Vout

350 V

Target efficiency

> 90%

Switching frequency

100 kHz

A switching frequency of f = 100 kHz was chosen to minimize passive components size and
weight, then the following step-by-step calculation was done:

Switching period:

Equation 2

T=

1
1
= 5 = 10 s
f 10

Maximum duty cycle

The theoretical maximum on time for each phase of the push-pull converter is:
Equation 3
t * on = 0.5T = 5 s

Since deadtime has to be provided in order to avoid simultaneous device conduction, it is

better to choose the maximum duty cycle of each phase as:
Equation 4

Dmax = 0.9

t * on
= 0.45
T

This means a total deadtime of 1s at maximum duty cycle, occurring for minimum input
voltage operation.

Input power

Assuming 90% efficiency the input power is:

Equation 5

Pin =

Pout
= 1111 W
0.9

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Design considerations

AN2794

Maximum average input current:

Equation 6

Pin
1111
=
= 55.55 A
Vinmin
20

Iin =

Maximum equivalent flat topped input current:

Equation 7
Ipft =

Iin
55.55
=
= 61.72 A
2Dmax
0.9

Maximum input RMS current:

Equation 8

IinRMS = Ipft 2Dmax = 58.55A

Maximum MOSFET RMS current:

Equation 9
IMos RMS = Ipft D max = 41.4 A

Minimum MOSFET breakdown voltage:

Equation 10
VBrk Mos = 1 . 3 2 VinMax = 72 .8 V

Transformer turns ratio:

Equation 11
N=

Vout
N2
=
= 19
N1 2Vinmin Dmax

Minimum duty cycle value:

Equation 12

Dmin =

Vout
= 0.32
2NVinmax

Duty cycle at nominal input voltage:

Equation 13
Dmin =

Vout
= 0.38
2NVin

Maximum average output current:

Equation 14
Iout =

10/39

Pout
= 2.86 A
Vout

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AN2794

Design considerations

Secondary maximum RMS current

Assuming that the secondary top flat current value is equal to the average output value the
rms secondary current is:
Equation 15
IsecRMS = Iout Dmax = 1.91 A

Rectifier diode voltage:

Equation 16
Vdiode = NVinMax = 532 V

Output filter inductor value:

Equation 17

Lmin (

t on
N2
Vin - Vout ) Max
N1
I

Assuming a ripple current value I= 15% Iout = 0.43A, the minimum value for the output filter
inductance is:
Equation 18
L min = 1.109 mH

With this value of inductance continuous current mode (CCM) operation is guaranteed for a
minimum output current of:
Equation 19
IoutMin =

I
= 0.215 A
2

which means a minimum load of 75 W is required for CCM operation. The chosen value for
this design is L=1.5 mH.

Output filter capacitor value:

Equation 20
C=

1 IL
Ts
8 V0

Considering a maximum output ripple value equal to:

Equation 21
V0 = 0 .1 % Vout = 0 .35 V

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Design considerations

AN2794

the minimum value of capacitance is:

Equation 22
Cmin = 1.53 F

and the equivalent series resistance (ESR) has to be lower than:

Equation 23
ESRmax =

V0
= 0.81
IL

Input capacitor:

Equation 24

Cin = ICrms

TonMax
Vin

where Icrms is the RMS capacitor current value given by:

Equation 25
2
2
ICrms = IIn
- Iin
= 19 A
Rms

and
Equation 26
Vin = 0.1%VinMax = 0.028 V

then
Equation 27

Cin = ICrms

12/39

TonMax
Vin

Doc ID 14827 Rev 2

= 3053 F

AN2794

Design considerations

HF transformer design

The design method is based on the Kg core geometry approach. The design can be done
according to the specifications in Table 3.
Table 3.

HF transformer design parameters

Specification

Symbol

Value

Nominal input voltage

Vin

24 V

Maximum input voltage

Vinmax

28 V

Minimum input voltage

Vinmin

20 V

RMS input current

Iin

41.4 A

Nominal output voltage

Vout

350 V

Output current

Iout

2.86 A

Switching frequency

100 kHz

Efficiency

98%

Regulation

0.05%

Max operating flux density

Bm

0.05T

Window utilization

Ku

0.3

Duty cycle

Dmax

0.45

Temperature rise

Tr

30 C

The first step is to compute the transformer apparent power given by:
Equation 28

Pt =

P0
1
+ P0 = ( + 1)V0I0 = 2021 W

The second step is the electrical condition parameter calculation Ke:

Equation 29

( )

2
K e = 0.145 K 2f f 2 Bm
10 -4

where Kf=4 is the waveform coefficient (for square waves).

Equation 30

( )

K e = 0.145(4)2 (100 .000 )2 (0.05)2 10 -4 = 5800

The next step is to calculate the core geometry parameter:

Equation 31
Kg =

Pt
= 0.348 cm5
2Ke

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Design considerations

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The Kg constant is related to the core geometrical parameters by the following equation:
Equation 32

Kg =

Wa A 2cK u
MLT

where Wa is the core window area, Ac is the core cross sectional area and MLT is the mean
length per turn.
For example, choosing an E55/28/21 core with N27 ferrite, having

Wa= 2.8 cm2

Ac= 3.5 cm2

MLT= 11.3 cm

the resulting Kg factor is:

Kg= 0.91 cm2

which is then suitable for this application.

Once the core has been chosen, it is possible to calculate the number of primary turns as
follows:
Equation 33
N1 =

Vinmin DmaxT
BAc

= 2 turns

The primary inductance value is:

Equation 34

Lp = N2AL = 4 5800 nH = 23.2 H

and the number of secondary turns is:
Equation 35
N2 = N N1 = 38 turns

At this point wires must be selected in order to implement primary and secondary windings.
At 100 kHz the current penetration depth is:
Equation 36
=

6.62

= 0.0209 cm

Then, the wire diameter can be selected as follows:

Equation 37

d = 2 = 0.0418 cm

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AN2794

Design considerations

and the conductor section is:

Equation 38

AW =

d2
= 0.00137cm2
4

Checking the wire table we notice that AWG26, having a wire area of AWAWG26 = 0.00128
cm2, can be used in this design. Considering a current density J = 500 A/cm2 the number of
primary wires is given by:
Equation 39

Snp =

A wp
A w AWG26

= 62

where:
Equation 40

Awp =

Iin
= 0.08 cm2
J

Since the AWG26 has a resistance of 1345 /cm, the primary resistance is:
Equation 41
rp =

1345 / cm
= 21.69 / cm
62

and so the value of resistance for the primary winding is:

Equation 42
Rp = N1 MLT rp = 490 .1

Using the same procedure, the secondary winding is:

Equation 43

A ws =

Iout
= 0.00572 cm2
J

Equation 44
S ns =

A ws
=5
A w AWG 26

Equation 45

rs =

1345 / cm
= 269 / cm
5

Equation 46
R s = N 2 MLT rs = 115 .5 m

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Design considerations

AN2794

The total copper losses are:

Equation 47

PCu = Pp + Ps = RpI2in + R sI2s = 1.78W

And transformer regulation is:
Equation 48
=

Pcu
100 = 0.178%
Pout

From the core loss curve of N27 material, at 55 C, 50mT and 100 kHz, the selected core
has the following losses:
Equation 49
PV = 28.1

kW
m3

Ve = 1.23 W

Where Ve= 43900 mm3 is the core volume. The transformer temperature rise is:
Equation 50

Tr = R th (PCu + PV ) = 33

with
Equation 51

R th = 11

C
W

Output inductor

The output filter inductor can be made using powder cores to minimize eddy current losses
and introduce a distributed air gap into the core. The design parameters are shown in
Table 4:
Table 4.

Output inductor design parameters

Specification

Symbol

Value

Minimum inductance value

Lmin

1.5 mH

DC current

I0

2.86 A

AC current

0.41 A

Output power

P0

1000 W

Ripple frequency

fr

200 kHz

Operating flux density

Bm

0.3 T

Core material

16/39

Kool

Window utilization

Ku

0.4

Temperature rise

Tr

25 C

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AN2794

Design considerations

The peak current value across the inductor is:

Equation 52

Ipk = I0 +

I
= 3.06A
2

To select a proper core we must compute the LI2pk value:

Equation 53
2
LIpk
= 10 .3 mH A

Knowing this parameter, from Magnetics core chart, a 46.7 mm x 28.7 mm x 12.2 mm Kool
toroid, with =60 permeability and AL = 0.086 nH/turn can be selected. The required
number of turns is then:
Equation 54
L
= 132 turns
AL

N=

The resulting magnetizing force (DC bias) is:

Equation 55
H = 0.4

NI
= 84.2 oersteds
Le

The initial value of turns has to be increased by dividing it by 0.8 (as shown in the data
catalog) to take into account the reduction of initial permeability (e = 39 at full load) at
nominal current value. Then, the adjusted number of turns is:
Equation 56
N = 165 turns

The wire table shows that at 3 A the AWG20 can be used. With this choice, the maximum
number of turns per layer, for the selected core, is Nlayer= 96 and the resistance per single
layer is rlayer= 0.166. The total winding resistance is then:
Equation 57

R=

N
Nlayer

rlayer = 0.38

and the copper losses are:

Equation 58
Pcu = RI 2o = 3 .1 W

The core losses can be evaluated as follows:

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Design considerations

AN2794

Equation 59
PL = kB 2ac.12 f1.23 = 2.047mW / g

Equation 60

B ac =

( )

I
e 10 -4
2
= 0.0137T
MPL

0.4N

where MPL=11.8 cm is the magnetic path length. Since the core weight is 95.8 g, the core
losses are:
Equation 61
PL = 0 .2 W

Analysis of the converter losses

Once the transformer has been designed, the next step in performing the loss analysis is to
choose the power devices both for the input and output stage of the push-pull converter.
According to the calculations given above the following components have been selected:
Table 5.

Power MOSFET

Device

Type

RDS(on)

tr+tf

Vbr

Id at 100 C

STP160N75F3

Power
MOSFET

4.5 m

70 ns+15 ns

75 V

96 A

Table 6.

Diode

Device

Type

VF at 175 C

trrMax

VRRM

IF at 100 C

STTH8R06

Ultrafast diode

1.4 V

25 ns

600 V

8A

MOSFET and diode losses can be separated into conduction and switching losses which
can be estimated, in the worst case operating condition (junction temperature of 100 C),
with the following equations:
Equation 62
Pcond = 1.6R ds ON I2MosRMS = 12.5W

Equation 63
Pgate = Q g Vgs f = 0.165 W

Equation 64
Psw(ON+ OFF) =

18/39

1 VOffImos (tr + t f )
= 8.5 W
2
T

Doc ID 14827 Rev 2

AN2794

Design considerations
Equation 65
Pcond Diode = VFIsecRMS = 2.67 W

Equation 66
Pdiode SW = VRMIRR t b f = 2 .4 W

Note:

Assuming: tB= trr/2, VRM= 350 V

Converter losses are distributed according to the graphic in Figure 6, where PCB trace
losses and control losses are not considered. What is important to note is that primary
switch conduction accounts for 36% of total DC-DC converter losses. This contribution can
be reduced by paralleling either two or three power devices. For example, by paralleling
three STP160N75F3s, a reduction in MOSFET conduction losses of 33% is achieved. Thus
MOSFET conduction losses account for 16% of total DC-DC converter losses, resulting in a
1.8% efficiency improvement.
Figure 6.

Distribution of converter losses

4%

5%

14%

36%

16%
25%

MOSFET cond. Losses

MOSFET sw. Losses

Diode cond. Losses

Diode sw. Losses

Transformer Losses

Inductor Losses

Doc ID 14827 Rev 2

AM00627v1

19/39

Design considerations
Figure 7.

AN2794
Distribution of losses with 3 STP160N75F3s paralleled

6%

6%

16%

18%

33%
21%

MOSFET cond. Losses

MOSFET sw. Losses

Diode cond. Losses

Diode sw. Losses

Transformer Losses

Inductor Losses
AM00628v1

2.1

Layout considerations
Because of the high power level involved with this design, the parasitic elements must be
reduced as much as possible. Proper operation of the push-pull converter can be assured
through geometrical symmetry of the PCB board. In fact, geometrical symmetry leads to
electrical symmetry, preventing a difference in the current values across the two primary
windings of the transformer which can be the cause of core saturation. The output stage of
the converter has also to be routed with a certain degree of symmetry even if in this case the
impact of unwanted parasitic elements is lower because of lower current values with respect
to the input stage. In Figure 8, Figure 9 and Figure 10, a symmetrical layout designed for the
application is shown.

20/39

Doc ID 14827 Rev 2

AN2794

Design considerations
Figure 8.

Component placement

AM00629v1

Figure 9.

Top layer

AM00630v1

Doc ID 14827 Rev 2

21/39

Design considerations

AN2794

Figure 10. Bottom layer

AM00631v1

To obtain geometrical symmetry the HF transformer has been placed at the center of the
board, which has been developed using double-sided, 140 m FR-4 substrate with
135 x 185 mm size. In addition, this placement of the transformer is the most suitable since
it is the bulkiest part of the board. Both the primary and secondary AC current loops are
placed very close to the transformer in order to reduce their area and consequently their
parasitic inductances. For this reason the MOSFET and rectifier diodes lie at the edges of
the PCB. Input loop PCB traces show identical shapes to guarantee the same values of
resistance and parasitic inductance. Also the IGBTs of the inverter stage lie at one edge of
the board. This gives the advantage of using a single heat sink for each group of power
components. The output filter is placed on the right side of the transformer, between the
bridge rectifier and the inverter stage.
The power supply section lies on the left side of the transformer, simplifying the routing of
the 15 V bus dedicated to supply all the control circuitry.

22/39

Doc ID 14827 Rev 2

AN2794

Schematic description

Schematic description
The schematic of the converter is shown in Figure 11. Three MOSFETs are paralleled in
order to transfer power to each primary winding of the transformer. Both RC and RCD
networks can be connected between the drain and source of the MOSFETs to reduce the
overvoltages and voltage ringing caused by unclamped leakage inductance. The output of
the transformer is rectified by a full bridge of ultrafast soft-recovery diodes. An RCD network
is connected across the rectifier output to clamp the diode voltage to its steady state value
and recover the reverse recovery energy stored in the leakage inductance. This energy is
first transferred to the clamp capacitor and then partially diverted to the output through a
resistor.
The IGBT full bridge is connected to the output of the push-pull stage. Their control signals
are generated by an SG3525 voltage mode PWM modulator. Its internal clock, necessary to
generate the 100 kHz modulation, is set by an external RC network. The PWM output stage
is capable of sourcing or sinking up to 100 mA which can be enough to directly drive the
gate of the MOSFETs devices. The PWM controller power dissipation, given by the sum of
its own power consumption and the power needed to drive six STP160N75F3s at 100 kHz,
can be evaluated with the following equation:
Equation 67
PContoller tot = 6Q g fVdrive + VsIs = 1.3W

where Vs and Is are the supply voltage and current.

Since this power dissipation would result in a high operating temperature of the IC, a totem
pole driving circuit has been used to handle the power losses and peak currents, achieving
a more favorable operating condition. This circuit was implemented by means of an NPNPNP complementary pair of BJT transistors. The control and driver stage schematic is
shown in Figure 11.

Doc ID 14827 Rev 2

23/39

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Schematic description
AN2794

Figure 11. Schematic

!-V

AN2794

Schematic description

The PWM modulation of the H-bridge inverter is implemented on an ST7lite39

microcontroller connected to the gate drive circuit composed of two L6386, as shown in the
schematic in Figure 11.
The auxiliary power supply section consists of an L5973D and an L7805, used to implement
a buck-boost converter to decrease the battery voltage from 24 V to 15 V and from 15 V to
5 V respectively.

Doc ID 14827 Rev 2

25/39

Experimental results

AN2794

Experimental results
Typical voltage and current waveforms of the DC-AC converter and the efficiency curves of
the push-pull DC-DC stage, measured at different input voltages, are shown below. In
particular, Figure 12 and Figure 13 show both input and output characteristic waveforms of
the DC-DC converter both in light load and full load condition.
The HF transformer leakage inductance, which is about 1% of the magnetizing inductance,
is the cause of severe ringing across the input and the output power devices. MOSFETs
voltage and current waveforms with and without the connection of a snubber network are
shown in Figure 14 and 15, while Figure 16 and 17 show the effect of the RCD clamp circuit
connected across the rectifier bridge output. In Figure 18 the current and the voltage across
one of the three parallel-connected MOSFETs, powering each of the two windings of the
transformer are shown, while in Figure 19 it is possible to observe the variation of the
inverter output voltage and current together with the DC-DC converter bus voltage. In
Figure 20, 21, 22, 23 and 24, the efficiency curves of the push-pull converter measured with
an RL load are given. A maximum efficiency above 93% has been measured at nominal
input voltage and 640 W output power. The minimum value of efficiency has been tested
under low load and maximum input voltage. In Figure 25, the efficiency of the whole board is
shown. The efficiency tests have been carried out connecting an RL load at the inverter
output connectors, with 3 mH output inductor.

26/39

Figure 12. Characteristic waveforms

(measured at 24 V input
voltage and 280 W resistive
load)

Figure 13. Characteristic waveforms

(measured at 28 V input
voltage and 1000 W resistive
load)

Ch1 and Ch2: MOSFETs drain source voltage;

Ch4: HF transformer output voltage; Ch3: filter
inductor current

Ch1 and Ch2: MOSFETs drain source voltage;

Ch3: filter inductor current

Doc ID 14827 Rev 2

AN2794

Experimental results

Figure 14. MOSFET voltage (ch4) and

current (ch3) without RC
snubber

Figure 15. MOSFET voltage (ch4) and

current (ch3) with RC
snubber

Figure 16. Rectifier diode current (ch3)

and voltage (ch4) without
RDC snubber

Figure 17. Rectifier diode current (ch3)

and voltage (ch4) with RDC
snubber

Doc ID 14827 Rev 2

27/39

Experimental results

AN2794

Figure 18. Ch1, ch3 MOSFETs drain

current, ch2, ch4 MOSFET
drain-source voltage

Figure 19. Startup, ch2, ch3 inverter

voltage and current, ch4 DC
bus voltage

Figure 20. DC-DC converter efficiency

with 20 V input

Figure 21. DC-DC converter efficiency

with 22 V input
1

Efficiency

Efficiency

0.95
0.9
0.85

0.95
0.9
0.85
0.8

0.8
0

200

400

600

800

1000

1200

200

400

600

800

0.95

0.95

Efficiency

Efficiency

Figure 23. DC-DC converter efficiency

with 26 V input

0.9
0.85
0.8

0.9
0.85
0.8

200

400

600

800

1000

1200

200

400

600

800

1000

1200

Output Power [W]

Output Power [W]

AM00638v1

28/39

1200

AM00637v1

AM00636v1

Figure 22. DC-DC converter efficiency

with 24 V input

1000

Output Power [W]

Output Power [W]

Doc ID 14827 Rev 2

AM00639v1

AN2794

Experimental results

Figure 24. DC-DC converter efficiency

with 28 V input

Figure 25. Converter efficiency

92

Effciency %

Efficiency

93
0.95
0.9
0.85
0.8

91
90
89
88

0.75
0

200

400

600

800

1000

1200

Output Power [W]

87
0

200

400

600

800

1000

Output Power [W]

AM00640v1

Doc ID 14827 Rev 2

AM00641v1

29/39

Conclusion

AN2794

Conclusion
The theoretical analysis, design and implementation of a DC-AC converter, consisting of a
push-pull DC-DC stage and a full-bridge inverter circuit, have been evaluated. Due to the
use of the parallel connection of three STP160N75F3 MOSFETs the converter shows good
performance in terms of efficiency. Moreover the use of an ST7lite39 8-bit microcontroller
allows achieving simple control of the IGBTs used to implement the DC-AC stage. Any
additional feature, such as regulation of the AC output voltage or protection requirements,
can simply be achieved with firmware development.

30/39

Bibliography
1.

Power Electronics: Converters, Applications and Design

2.

Transformer and Inductor Design Handbook, Second Edition

3.

Magnetic Core Selection for Transformers and Inductors, Second Edition

4.

Switching Power Supply Design. New York.

Doc ID 14827 Rev 2

AN2794

Component list

Appendix A
Table 7.

Component list

Bill of material (BOM)

Component

Part value

Description

Cs1

100 nF, 630 V

Polip. cap., MKP series

EPCOS

Cs2

100 nF, 630 V

Polip. cap., MKP series

EPCOS

C1

100 nF, 50 V

X7R ceramic cap.., B37987 series

EPCOS

C2

100 nF, 50 V

X7R ceramic cap., B37987 series

EPCOS

C57

100 nF, 50 V

X7R ceramic cap., B37987 series

EPCOS

C59

100 nF, 50 V

X7R ceramic cap., B37987 series

EPCOS

C10

47 F, 35 V

SMD tantalum capacitor TAJ series

C11

4.7 nF, 25 V

SMD multilayer ceramic capacitor

C12

100 F, 25 V

SMD X7R ceramic cap. C3225 series; size 1210

TDK

C14

47 F, 35 V

SMD tantalum capacitor TAJ series

AVX

C16

100 pF, 25 V

SMD multilayer ceramic capacitor

C41

100 pF, 50 V

General purpose ceramic cap., radial

C17

680 nF, 25 V

SMD multilayer ceramic capacitor

C18

22 F, 25 V

Electrolytic cap FC series

Panasonic

C19

22 F, 25 V

Electrolytic cap. FC series

Panasonic

C26

2.2 F, 25 V

X7R ceramic cap., B37984 series

EPCOS

C31

2.2 F, 25 V

X7R ceramic cap., B37984 series

EPCOS

C28

470 nF, 25 V

X7R ceramic cap., B37984 series

EPCOS

C33

470 nF, 25 V

X7R ceramic cap., B37984 series

EPCOS

C34

33 F, 450 V

Electrolytic cap. B43821 series

EPCOS

C35

33 F, 450 V

Electrolytic cap. B43821 series

EPCOS

C37

3900 F, 35 V

Elec. capacitor 0.012 , YXH series

Rubycon

C38

3900 F, 35 V

Elec. capacitor 0.012 , YXH series

Rubycon

C39

150 F, 35 V

Electrolytic cap. fc series

C40

22 nF, 50 V

General purpose ceramic cap., radial

C42

100 F, 25 V

Electrolytic cap. fc series

Panasonic

C51

100 F, 25 V

Electrolytic cap.fc series

Panasonic

C52

100 F, 25 V

Electrolytic cap.fc series

Panasonic

C53

2.2 F, 450 V

Elcrolytic capactor B43851 series

EPCOS

C54

4.7 nF, 100 V

Polip. cap., MKT series

EPCOS

C55

4.7 nF, 100 V

Polip. cap., MKT series

EPCOS

C56

470 nF, 50 V

X7R ceramic cap., B37984 series

EPCOS

Doc ID 14827 Rev 2

Supplier

AVX
muRata

muRata
AVX
muRata

Panasonic
AVX

31/39

Component list
Table 7.

AN2794

Bill of material (BOM) (continued)

Component

Part value

Description

Supplier

C58

0.33 F, 50 V

X7R ceramic cap., B37984 series

EPCOS

C60

150 nF, 50 V

SMD multilayer ceramic capacitor

muRata

D1

STTH8R06D

Ultrafast high voltage rectifier; TO-220AC

STMicroelectronics

D2

STTH8R06 D

Ultrafast high voltage rectifier; TO-220AC

STMicroelectronics

D3

STTH8R06 D

Ultrafast high voltage rectifier; TO-220AC

STMicroelectronics

D4

STTH8R06 D

Ultrafast high voltage rectifier; TO-220AC

STMicroelectronics

D13

STTH8R06 D

Ultrafast high voltage rectifier; TO-220AC

STMicroelectronics

D5

BAT46

Small signal Schottky diode; SOD-123

STMicroelectronics

D6

BAT46

Small signal Schottky diode; SOD-123

STMicroelectronics

D8

BAT46

Small signal Schottky diode; SOD-123

STMicroelectronics

D7

BAT46

Small signal Schottky diode; SOD-123

STMicroelectronics

D9

STTH1L06

Ultrafast high voltage rectifier; DO-41

STMicroelectronics

D10

STTH1L06

Ultrafast high voltage rectifier; DO-41

STMicroelectronics

D11

1N5821

Schottky rectifier; DO-221AD

STMicroelectronics

D12

1N5821

Schottky rectifier; DO-221AD

STMicroelectronics

VOUT AC 1

CON1

FASTON

RS components

VOUT AC 2

CON1

FASTON

RS components

VOUT -

CON1

FASTON

RS components

VOUT +

CON1

FASTON

RS components

VIN

CON1

FASTON

RS components

GND

CON1

FASTON

RS components

IC1

L6386D

High-voltage high and low side driver; dip-14

STMicroelectronics

IC2

L6386D

High-voltage high and low side driver; dip-14

STMicroelectronics

IGBT LOW 1 STGW19NC60WD N-channel 19 A - 600 V TO-247 PowerMESH IGBT

STMicroelectronics

IGBT HIGH 1 STGW19NC60WD N-channel 19 A - 600 V TO-247 PowerMESH IGBT

STMicroelectronics

IGBT LOW 2 STGW19NC60WD N-channel 19 A - 600 V TO-247 PowerMESH IGBT

STMicroelectronics

IGBT HIGH 2 STGW19NC60WD N-channel 19 A - 600 V TO-247 PowerMESH IGBT

STMicroelectronics

J1

CON10

L3

150 H, 3 A

L4(1)

1174.0018 ST04

M1

STP160N75F3

N-channel 75 V - 3.5 m 120 A TO-220 STripFET

Power MOSFET

STMicroelectronics

M2

STP160N75F3

N-channel 75 V - 3.5 m 120 A TO-220 STripFET

Power MOSFET

STMicroelectronics

M3

STP160N75F3

N-channel 75 V - 3.5 m 120 A TO-220 STripFET

Power MOSFET

STMicroelectronics

32/39

10-way idc connector commercial box header series

Power use SMD inductor; SLF12575T series
1.5 mH, filter inductor

Doc ID 14827 Rev 2

Tyco Electronics
TDK
MAGNETICA

AN2794
Table 7.

Component list
Bill of material (BOM) (continued)

Component

Part value

M4

STP160N75F3

N-channel 75 V - 3.5 m 120 A TO-220 STripFET

Power MOSFET

STMicroelectronics

M5

STP160N75F3

N-channel 75 V - 3.5 m 120 A TO-220 STripFET

Power MOSFET

STMicroelectronics

M6

STP160N75F3

N-channel 75 V - 3.5 m 120 A TO-220 STripFET

Power MOSFET

STMicroelectronics

Q8

STN4NF03L

N-channel 30 V , 6.5 A SOT-223 STripFET II Power

MOSFET

STMicroelectronics

Q9

2SD882

NPN Power BJT 30 V, 3 A transistor- SOT-32

STMicroelectronics

Q10

2SD882

NPN Power BJT 30 V, 3 A transistor- SOT-32

STMicroelectronics

Q11

2SB772

NPN Power BJT 30 V, 3 A transistor - SOT-32

STMicroelectronics

Q12

2SB772

NPN Power BJT 30 V, 3 A transistor - SOT-32

STMicroelectronics

RGATE IGBT
LOW 1

100

SMD standard film res - 1/8 W - 1% - 100 ppm/C

BC components

RGATE IGBT
HIGH 1

100

SMD standard film res - 1/8 W - 1% - 100 ppm/C

BC components

RGATE IGBT
LOW 2

100

SMD standard film res - 1/8 W - 1% - 100 ppm/C

BC components

RGATE IGBT
HIGH 2

100

SMD standard film res - 1/8 W - 1% - 100 ppm/C

BC components

R7

390 k

SMD standard film res - 1/8 W - 1% - 100 ppm/C

BC components

R9

5.6 k

SMD standard film res - 1/8 W - 1% - 100 ppm/C

BC components

12

SMD standard film res - 1/8 W - 1% - 100 ppm/C

BC components

10

SMD standard film res - 1/8 W - 1% - 100 ppm/C

BC components

R81

22 k

Standard film res - 1/4 W 5%, axial 05

T-Ohm

R82

3.3 k

Standard film res - 1/4 W 5%, axial 05

T-Ohm

R83

39 k

Standard film res - 1/4 W 5%, axial 05

T-Ohm

R87

10 k

SMD standard film res - 1/8 W - 1% - 100ppm/C

R20

Description

Supplier

R21
R22
R23
R24
R25
R99
R100
R101
R102
R103
R104

Doc ID 14827 Rev 2

BC components

33/39

Component list
Table 7.
Component

AN2794

Bill of material (BOM) (continued)

Part value

Description

Supplier

R88
R89
R90

10 k

SMD standard film res - 1/8 W - 1% - 100ppm/C

BC components

R93

1.5 k

SMD standard film res - 1/8 W 1% - 100ppm/C

BC components

R94

470

High voltage 17 W ceramic resistor sbcv type

Meggit CGS

R95

470

High voltage 17 W ceramic resistor sbcv type

Meggit CGS

10

Standard film res 2 W 5%, axial 05

T-Ohm

47 k

Standard film res - 1/4 W 5%, axial 05

T-Ohm

R91
R92

R96
R97
R98
(2)

TX1

1356.0004 rev.01

Power transformer

MAGNETICA

U1

SG3525

Pulse width modulator SO-16 (narrow)

STMicroelectronics

U16

L5973D

2.5 A switch step down regulator; HSOP8

STMicroelectronics

U17

ST7FLITE39F2

8-bit microcontroller; SO-20

STMicroelectronics

U20

L7805

124

HEAT SINK

Part n. 78185, S562 cooled package TO-220; thermal

res. 7.52 C/W at length 70 mm width 40 mm height
57 mm

Aavid Thermalloy

HEAT SINK

Part n. 78350, SA36 cooled package TO-220; thermal

res. 1.2C/W at length 135 mm width 49.5 mm height
85.5 mm

Aavid Thermalloy

125
126

Positive voltage regulator;

D2PAK

1. The technical specification for this component is provided in Figure 26.

2. The technical specification for this component is provided in Figure 27.

34/39

Doc ID 14827 Rev 2

STMicroelectronics

AN2794

Product technical specification

Appendix B

Product technical specification

Figure 26. Technical specification for 1.5 mH 2.5 A inductor L4 (produced by

MAGNETICA)

TYPICAL APPLICATION

TECHNICAL DATA

INDUCTOR FOR DC/DC CONVERTERS AS BUCK, BOOST E

INDUCTANCE
BUCK-BOOST CONVERTERS. ALSO SUITABLE IN HALF (MEASURE 1KHZ, TA 20C)
BRIDGE, PUSH-PULL AND FULL-BRIDGE APPLICATIONS
RESISTANCE

SCHEMATIC

1.5mH 15%
0.52

max

(MEASURE DC, TA 20C)

800 VP MAX

OPERATING VOLTAGE
(F 100K HZ, IR 2.5A, TA 20C)

2.5 A MAX

OPERATING VOLTAGE

(MEASURE DC 800 VP, TA 20C)

4.5 A NOM

SATURATION CURRENT

(MEASURE DC, L 50%NOM, TA 20C)

SELF -RESONANT FREQUENY

1MHZ NOM

(TA 20C)

-10C+45C

OPERATING TEMPERATURE RANGE

(IR 2.5 A MAX)

45X20 H46mm
78g CIRCA

DIMENSIONS

WEIGHT
INDUCTANCE VS CURRENT

INDUCTANCE VS FREQUENCY
250%

L/L(1kHz)

100%

200%
150%
100%
50%

10%

0%
0

I [A]

DIMENSIONAL DRAWING

200

400

600

800

1000

f [kHz]

BOTTOM VIEW (PIN SIDE)

20 max

45 max

12.7
2

30.48

46 max

3 min 1
10.16

1
DIMENSIONS IN MM, DRAWING NOT IN SCALE

0.8 (X4), RECOMMENDED PCB HOLE

Doc ID 14827 Rev 2

1.2 (X4)

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Product technical specification

AN2794

Figure 27. Technical specification for 1 kW, 100 kHz switch mode power transformer
TX1 (produced by MAGNETICA)

T YPICAL APPLICATION

T ECHNICAL DATA
-

TRANSFORMER TO POWER APPLICATIONS WITH HALF

BRIDGE , PUSH -PULL E FULL -BRIDGE TYPOLOGY .

I NDUCTANCE

( MEASURE 1 K H Z , T A 20C)

SCHEMATIC

PIN
PIN
PIN

1
2

17.2 uH MIN
17.2 uH MIN
5.7 mH MIN

6 m MAX
6 m MAX
90 m MAX

IN CC

R ESISTANCE

13

( MEASURE D . C , T A 20C)
PIN
PIN
PIN

3
4
5

1,2 3,4,5
3,4,5 6,7
9 13 (10-12

12
10

1,2 3 , 4 , 5
3,4,5 6 , 7
9 13 (10-12

IN CC

TRANSFORMER RATIO

( MEASURE 10 K H Z , 10-12 IN CC , T A 20C)

PIN
PIN

13 9 1,2 3,4,5
13 9 3,4,5 6,7

L EAKAGE I NDUCTANCE

6
7

( MEASURE 9-13, 1-2-3-4-5-6-7

AND

10-12

IN C . C , F

18 5%
18 5%
0.11 % NOM
10 K H Z , T A 20C)

OPERATING VOLTAGE
8 0 0 V P MAX
( MEASURE 13-9, 10-12 IN CC , F 100 K H Z , D UTY C YCLE 0.8,T A 20C)
OPERATING CURRENT
( MEASURE 13-9 WITH 1-2-3-4-5-6-7
P MAX 1 K W ,F 100 K H Z , T A 20C)

PRODUCT PICTURE

2 . 5 A MAX
IN CC

OPERATING FREQUENCY

100 K H Z NOM

OPERATING TEMPERATURE RANGE

-10C +45C

(P MAX 1 K W , T A 20C)

(P MAX 1 K W, F 100 K H Z )

INSULATION CLASS

( P MAX 1 K W, T A 20C )

P RIMARY TO SECONDARY INSULATION

(F 50H Z , DURATION TEST

2500V

2, T A 20C)

MAXIMUM DIMENSIONS

57X57H45 mm

W EIGHT

PIN (*)

1A
2A
3B
4B
5B
6C
7C

FUNCTION

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PIN DESCRIPTION
PIN (*)

P RIMARY DRAIN A
P RIMARY DRAIN A

8
9
10 D
11
12D
13
14

P RIMARY +V B 24V
P RIMARY DRAIN B
P RIMARY DRAIN B

(*)P IN WITH THE SAME SUBSCRIPT MU

2 9 2 g CIRCA

ST BE CONNECTED TOGETHER ON

PCB

Doc ID 14827 Rev 2

FUNCTION
NOT USED
SECONDARY GROUND
INTERMEDIARY

S ECONDARY ACCESS

MISSING , REFERENCE TO PCB ASSEMBLING

S ECONDARY ACCESS
S ECONDARY 400V 2.5A
INTERMEDIARY
NOT USED

AN2794

Product technical specification

Figure 28. Dimensional drawing

56.5 max

1356.0004
SMT 1kW 100kHz
MAGNETICA

08149

1.0, Recommended PCB hole

1.4

14 13 12 4 10 9 8

55.5 max

7
3 min
40

5
8

MISSING PIN
REFERENCE AS PCB ASSEMBLING

14

BOTTOM VIEW

( PIN SIDE )

Doc ID 14827 Rev 2

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Revision history

AN2794

Revision history
Table 8.

38/39

Document revision history

Date

Revision

Changes

16-Feb-2009

Initial release

13-Jan-2012

Introduction modified
Section 3 modified

Doc ID 14827 Rev 2

AN2794

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