EN1802 - Basic Electronics
S1: Introduction
S2 : Materials used in Electronics
By : Dr. S. Thayaparan
Slide contents are extracted from the following source of origin:
1. Basic Electronics Lecture Notes, ENTC 2010
2. http://cktse.eie.polyu.edu.hk/eie209 By Prof. Michael Tse
3. http://en.wikipedia.org/wiki/Diode
4. http://www.pcb.electrosoft-engineering.com/design-examples-printed-circuit-boards.html
Course Outline
1.
2.
3.
4.
5.
6.
7.
Introduction
Materials used in Electronics
Diodes, Diode Circuits and Applications
Bipolar Junction Transistors and Circuits
Field Effect Transistors and Circuits
Integrated Circuits and Amplifiers
Logic Gates and Circuits
Evaluation:
60% Exam
GPA 2.0
40% CA
2hr Lecture / Week
1. Introduction
1.1 History: 1904 - Vacuum Tube
Ambrose Fleming and his Invention 1904
Sir John Ambrose Fleming (18491945) was an English electrical
engineer and physicist, known primarily for inventing in 1904 the first
vacuum tube.
1.1 History: 1904 - Vacuum Tube
1.2 Vacuum Diode
1. Vacuum diode supports
current flow through it in
only one direction
2. Heated cathode emits
electrons
3. Anode collects electrons
4. Microwave oven has a
specialized vacuum diode
that sits inside a magnetic
field
1.3 History: 1907 - Vacuum Tube Amplifier
Lee de Forest and his Invention - 1907
Lee De Forest (1873 1961) was an American inventor with
over 180 patents to his credit. He invented the Audion (vaccum
tube amplifier). He is one of the fathers of the "electronic age
, as the Audion helped to usher in the widespread use of
electronics. He is also credited with one of the principal
inventions which brought sound to motion pictures.
Then Things followed in suit
1900 1940 s
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1.4 Vacuum Tube Amplifier
1.
2.
3.
De Forest's Audion tube came to be known as the
triode tube, because it had three elements:
filament, grid, and plate
Low to medium power valve amplifiers for
frequencies below the microwaves were largely
replaced by solid state amplifiers during the 1960s
and 1970s
Valve amplifiers are used for applications such as
guitar amplifiers, satellite transponders such as
DirecTV and GPS, audiophile stereo amplifiers,
military applications (such as radar) and very high
power radio and UHF television transmitters
Schematic symbol for an
indirectly heated triode
1.4 Vacuum Tube Amplifier
Vacuum Tube era
Vacuum Computers
Vacuum Memories
Vacuum Radios
Vacuum TV
1.5 History: 1947 - Transistor
Everything changed with the invention of
the transistor, at Bell Labs in 1947 by
William Shockley, John Bardeen, and
Walter Brattain, all of whom won the
1956 Nobel Prize in physics for their
efforts
Transistor era
Transistor Computers
Transistor Memories
Transistor Radios
Transistor TV
But then came the interconnection Problem
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1.5 History: 1947 - Transistor
if you can make all the separate
components out of semiconductor
material, why not make themand all the
wires that connect them togetheron the
same piece of semiconductor material?
Integration Era
SSI: Small-scale Integration, Gates< 10 (1960s)
MSl: Medium-scale Integration, Gates< 1000 (1970s)
LSl: Large-scale Integration, Gates> 1000 (mid 1970s)
VLSI: Very Large-scale Integration, Gates>100,000 (1980s)
SoC: Million Gate, Software & Hardware (mid 2000s)
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1.6 Where are we now ?
Billions of transistors on a chip
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1.7 Electronic Products - Some Examples
Age of electronics
microcontrollers, DSPs,
and other VLSI chips are
everywhere
Digital Camera
Cell phone
Electronics of today
and tomorrow
higher performance
(speed) circuits
low power circuits for
portable applications
Game Console
more mixed signal
MP3/CD Player
emphasis
wireless hardware
high performance signal processing
sensors and microsystems
Camcorder
Laptop
PDA
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1.8 Examples of Printed Circuit Board Designs
CAD design of a high speed 6 layer PCB
By ELECTROSOFT ENGINEERING
The 6 layer PCB once manufactured
and assembled By ELECTROSOFT
ENGINEERING
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1.9 Integrated Circuits (IC) Examples
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1.10 Decapsulated IC
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2. Materials used in Electronics
2.1 Periodic Table of Elements
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2.2 Semiconductor - N Type
Pure silicon has few free electrons and is quite resistive
Silicon is normally doped with other elements to
increase its conductivity
Dopants, like phosphor (P), arsenic (As), and Antimony
(Sb) easily give up one of their electrons to the impure
silicon
These donated electrons are free to move about the
silicon, and its conductivity increases dramatically
N-type semiconductor with N-type dopant
N-type dopant has 5 valance electron
Minority carriers are the holes from base semiconductor
Majority carriers are the electrons from n-type dopant
and base semiconductor
Note : valence electrons are the electrons of an atom that
can participate in the formation of chemical bonds with
other atoms
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2.3 Semiconductor - P Type
Dopants, like boron(B), indium (In), and aluminum(Al)
grab electrons from the surrounding silicon atoms,
leaving positively charged silicon ions behind
Positive silicon ions try to lessen their charge by
grabbing electrons from their neighbors
P-type dopant has 3 valance electron
P-type semiconductor with P-type dopant
Majority carriers are the holes from p-type dopant and
base semiconductor
Minority carriers are the electrons from base
semiconductor
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2.4 PN JUNCTION
N
P
e
VB
N
P
-
+
e
e
+
+
e
e
+
+
e
e
+
+
e
e
+
+
e
e
+
Depletion region
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2.5 Diode
Note : Depletion region is formed from a conducting region by removal of all free
charge carriers, leaving none to carry a current
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2.6 Semiconductor Diodes
Diodes are made from semiconducting materials (crystalline silicon) with added
impurities
Impurities added to create a region with negative charge carriers (electrons), called ntype semiconductor
Impurities added to create a region with positive charge carriers (holes), called p-type
semiconductor
PN Junction is the boundary within the crystal between P region and N region
The crystal conducts a current of electrons in a direction from the N-type side (called
the cathode) to the P-type side (called the anode), but not in the opposite direction;
that is, a conventional current flows from anode to cathode (opposite to the electron
flow, since electrons have negative charge).
Another type of semiconductor diode is the Schottky diode, is formed from the contact
between a metal and a semiconductor rather than by a p-n junction
- Metals (molybdenum, platinum, chromium or tungsten) and N-type semiconductor
- Metal sides is the anode and N-type semiconductor is the cathode
- Very fast switching and low forward voltage drop.
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