Electronics-I

nd
2 Year Class
LECTURE 1
DR. MOHAMMED YASSER

11/10/2021 ELECTRONICS-I MOHAMMED YASSER 1

Outline
1. Electronics History
2. Electronics-I Course Layout
3. Course Material
4. Grading policy
5. Reading Assignment

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Electronics History(cont’d)
We encounter electronics in
our daily life in the form of
telephones, game consoles,
televisions, audio equipment,
home appliances, computers,
equipment for industrial
control and automation, and
more..

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Electronics History (cont’d)
The age of electronics began with the invention of
the first amplifying device, the triode vacuum tube,
by Fleming in 1904.
 followed by the solid-state point-contact diode
(silicon) by Pickard in 1906
 then, the first radio circuits from diodes and triodes
between 1907 and 1927.
 demonstration of television in 1925
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Electronics History (cont’d)
The first electronics revolution
began in 1947 with the invention
of the silicon transistor by
Bardeen, Brattain, and Shockley
at Bell Telephone Laboratories.

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Electronics History (cont’d)
first demonstration of color television in 1950
and the invention of the unipolar field-effect transistor
by Shockley in 1952.
1956 pnpn silicon-controlled rectifier (SCR), Bell
Laboratories.
The first integrated circuit (IC) was
developed in 1958 simultaneously by Kilby
at Texas Instruments and Noyce and Moore
at Fairchild Semiconductor.
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Electronics History (cont’d)
First Operational amplifier, the µA709, by Fairchild
Semiconductor in 1968
 the 4004 microprocessor (4-bit) by Intel in 1971
 the 8-bit microprocessor by Intel in 1972
 and the gigabit memory chip by Intel in 1995.

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Electronics History (cont’d)
Electronics come in a variety of shapes and functionality

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About Me
Mohammed Yasser Osama. Formerly, Asst Professor, ECE Dept, WMU, USA
• Ph.D., Electrical and Computer Engineering, WMU-USA, 2021
• Other Engineering degrees:
• MSc. Mechatronics Engineering (Control & Systems), 2009
• BSc. Control And Systems Engineering (Control Engineering), 2001
• BSc. Architectural Engineering (Baghdad University), 1994
• Current interest is in Robotics, Programmable Devices, and Laparoscopic
surgical devices. Two of my Laparoscopic trainers are currently installed at the
WMed Simulation center, USA.
• I have a great passion for teaching, especially Electronics.
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Electronics-I Course Layout
• Electronics (active devices; diodes and transistors)
1. Analysis (for a given circuit, find V, I, P, Z, etc.)

2. Design (from a specification design: amplifier, logic

gate, driver, regulator, etc.)
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Electronics-I Course Layout (cont’d)
Topics summary:
1. Semiconductor Diode
a. Zener Diode with applications
2. Bipolar Junction Transistor (BJT)
a. NPN
b. PNP
3. Field Effect Transistor (FET)
a. N-Channel
b. P-Channel
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 Course Material
Textbooks:
1. Electronic Devices and Circuit Theory 11th Edition
Robert Boylestad, Louis Nashelsky.
(required)
2. Microelectronic Circuits 8th Edition
Sedra, Smith, Carusone, and Gaudet
(recommended)

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Course Material (cont’d)
• Calculator: Recommended calc
i. Casio FX-991EX classwiz

ii. Casio PRIZM FX-CG50

iii. Casio fx-CP400 ClassPad II

touchscreen with Stylus
Graphing and CAS.

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Course Material (cont’d)
Spice software: LTspice Simulator

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Course Material (cont’d)
Telegram account: join the class channel
1. Posting lectures, Homework assignments, and other
class material
2. Interactive polls and multiple-choice questions

handle: MechatronicsClass

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Recommended Material
Digital Multimeter

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Grading policy
Tentative Grading policy:
10% participation, homework, pop quiz
20% Mid term exam
10% Lab work
60% Final exam

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 Reading Assignment
Electronic Devices and Circuit Theory
Boylestad and Nashelsky 11th

Section 1.4 ENERGY LEVELS, pages 5-7

Section 1.5 n-TYPE & p-TYPE Materials, pages 7-10

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 Thank You!

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 Electronics-I
nd
2 Year Class
LECTURE 2
DR. MOHAMMED YASSER

18/10/2022 ELECTRONICS-I MOHAMMED YASSER 1

Outline
1. Semiconductor Materials
2. pn-junction and the semiconductor Diode
3. Diode Characteristic Graph (IV-Curve)
4. Temperature Effects
5. Diode Resistance Types
6. Examples
7. Reading Assignment
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Semiconductor Materials
• Semiconductors are a special class of elements
having a conductivity between that of a good
conductor and that of an insulator.
• Conductivity σ=1/ρ
Sigma
Rho

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Semiconductor Materials (cont’d)
• Ge, Si, and GaAs are the three semiconductors used most
frequently in the construction of electronic devices.
• Valence electron is an e that can participate in the formation
of a chemical bond.

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Semiconductor Materials (cont’d)
• Si is used most frequently as the base material in the
construction of solid-state electronic devices.
• The characteristics of a semiconductor material can
be altered significantly by adding specific impurity
atoms to the relatively pure semiconductor material.
• Boron (B), having 3 valence electrons, and Antimony
(Sb), having 5 valence electrons are the doping
impurities used with Si.
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Semiconductor Materials (cont’d)

p -Type Material n -Type Material

Electron vs. conventional flow

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Semiconductor Materials (cont’d)
•The n-type and p-type materials represent the basic
building blocks of semiconductor devices.
• In an n-type material, the electron is the majority carrier,
while in p-type material, the hole is the majority carrier.

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pn-junction and the semiconductor Diode
• Joining n-type material with a majority carrier of electrons
to p-type with a majority carrier of holes forms the
semiconductor diode.
• Depletion region:
lack of free carriers in
the region near the junction.
No-Bias Condition ( VD = 0V)
• the net flow of charge in one
direction is zero for VD = 0V.
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pn-junction and the semiconductor Diode
(cont’d)
Reverse-Bias; OFF-Condition ( VD < 0V)

Anode Cathode

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pn-junction and the semiconductor Diode
(cont’d)
Forward-Bias; ON-Condition ( VD > 0V)

Anode Cathode

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 Diode Characteristic Graph (IV-Curve)
• The general characteristics of a semiconductor diode can be defined
by Shockley’s equation for the forward- and reverse-bias regions:

Where:
Is is the reverse saturation current.
VD is the forward-bias voltage across the diode.
n is an ideality factor; it has a range between 1 and 2.
VT is called the thermal voltage.
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Diode Characteristic Graph (IV-Curve)
(cont’d)
• the thermal voltage VT is determined by:

K is Boltzmann’s constant = 1.38 × 10 J/K

TK is the absolute temperature in Kelvins = 273 + Temp in °C
q is the magnitude of electronic charge = 1.6 × 10 C

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Diode Characteristic Graph (IV-Curve)
(cont’d)

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Diode Characteristic Graph (IV-Curve)
(cont’d)
Ex: Plot Shockley’s equation for 𝐼 = 10 pA.

Sol. For positive values of VD, 𝑒 term will grow very

quickly compared to 𝐼 , therefore:

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 Remarks:
• As the value of VD increases, the curve becomes
almost vertical.

• For negative values of VD, the exponential term

drops very quickly below the level of ID.

• At VD=0 V,
• Commercially available silicon diodes deviate
from the ideal Diode (internal “body” resistance,
external “contact” resistance of a diode.)
• The actual IS of a commercially available diode
will normally be measurably larger than that in
Shockley’s equation.
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 Diode Characteristic
Graph (IV-Curve) (cont’d)
• Applying negative voltage with the reverse polarity
will result in a sharp change in the characteristics
avalanche region(VBV) called breakdown potential (VBV)
• The avalanche region can be brought closer to the
vertical axis by increasing the doping levels in the p-
and n-type materials.
• Decreasing VBV to a very low level, such as -5V,
another mechanism called Zener breakdown will
contribute to the sharp change in the characteristic.
• The maximum reverse bias that can be applied
before entering the breakdown region is called the
peak inverse voltage (PIV rating) or the peak reverse
voltage (PRV rating).
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Obtaining the IV-Curve of a real Diode
Will be discussed in the tutorial hour.

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 Temperature Effects
• In the forward-bias region, the
characteristics of a silicon diode shift
to the left at a rate of 2.5 mV per
centigrade degree increase in
temperature.
• In the reverse-bias region, the reverse
current (IS) of a silicon diode doubles
for every 10°C rise in temperature.
• The reverse breakdown voltage of a
semiconductor diode will increase or
decrease with temperature.

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Diode Resistance types
Diode resistance is variable due to the nonlinear shape of
the characteristic curve.
1. DC (Static) Resistance

2. AC (Dynamic) Resistance

3. Average AC Resistance

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 Examples

The higher the current through a diode, the

lower the dc resistance level

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 Examples

Slope = 1/rd
rd has higher values at the knee of the characteristic curve.

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 Examples (cont’d)

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 Examples (cont’d)

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 Examples (cont’d)

As with the dc and ac resistance levels, the lower the

level of currents used to determine the average
resistance, the higher the resistance level.

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 Summary of
resistance levels

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 Reading Assignment
Electronic Devices and Circuit Theory
Boylestad and Nashelsky 11th

Section 1.10 TRANSITION AND DIFFUSION CAPACITANCE, pages 30-31

Section 1.11 REVERSE RECOVERY TIME, pages 31-32
Section 1.12 DIODE SPECIFICATION SHEETS, pages 32-35

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 Thank You!

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