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Semiconductor MPSA92/93: Technical Data

1. The document provides technical data and specifications for the MPSA92/93 epitaxial planar PNP transistor, which is suitable for high voltage and telephone applications. 2. The transistor has a breakdown voltage rating of -300V for the MPSA92 and -200V for the MPSA93. It also has current and power ratings, as well as operating temperature ranges. 3. Electrical characteristics of the transistor are provided, including breakdown voltages, current gains, saturation voltages, transition frequency, and collector output capacitance.

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Toni Tursić
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80 views2 pages

Semiconductor MPSA92/93: Technical Data

1. The document provides technical data and specifications for the MPSA92/93 epitaxial planar PNP transistor, which is suitable for high voltage and telephone applications. 2. The transistor has a breakdown voltage rating of -300V for the MPSA92 and -200V for the MPSA93. It also has current and power ratings, as well as operating temperature ranges. 3. Electrical characteristics of the transistor are provided, including breakdown voltages, current gains, saturation voltages, transition frequency, and collector output capacitance.

Uploaded by

Toni Tursić
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR

MPSA92/93

TECHNICAL DATA

EPITAXIAL PLANAR PNP TRANSISTOR

HIGH VOLTAGE APPLICATION.


TELEPHONE APPLICATION.
B

FEATURES
A

Complementary to MPSA42/43.

N
E

SYMBOL

MPSA92

Voltage

MPSA93

Collector-Emitter

MPSA92

Voltage

MPSA93

UNIT

-300

VCBO

-200
-300

VCEO

V
-200

VEBO

-5.0

Collector Current

IC

-500

mA

Emitter Current

IE

500

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

Tstg

-55 150

Emitter-Base Voltage

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25


CHARACTERISTIC
MPSA92

Breakdown Voltage

MPSA93

Collector-Emitter

MPSA92

Breakdown Voltage

MPSA93

Collector Cut-off

MPSA92

Current

MPSA93

1. EMITTER
2. BASE
3. COLLECTOR

TO-92

MIN.

TYP.

MAX.

-300

-200

-300

-200

VCB=-300V, IE=0

-0.25

VCB=-150V, IE=0

-0.25

VEB=-3V, IC=0

-0.1

IC=-1.0mA, VCE=-10V

25

IC=-10mA, VCE=-10V

40

IC=-30mA, VCE=-10V

25

IC=-100 A, IE=0

V(BR)CEO

IC=-1.0mA, IB=0

ICBO

* hFE

DC Current Gain

TEST CONDITION

V(BR)CBO

IEBO

Emitter Cut-off Current

SYMBOL

Collector-Base

Collector-Base

RATING

MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00

CHARACTERISTIC

MAXIMUM RATING (Ta=25

DIM
A
B
C
D
E
F
G
H
J
K
L
M
N

UNIT
V

A
A

Collector-Emitter Saturation Voltage

* VCE(sat)

IC=-20mA, IB=-2.0mA

-0.5

Base-Emitter Saturation Voltage

* VBE(sat)

IC=-20mA, IB=-2.0mA

-0.9

50

MHz

6.0

8.0

fT

Transition Frequency
Collector Output

MPSA92

Capacitance

MPSA93

Cob

VCE=-20V, IC=-10mA, f=100MHz


VCB=-20V, IE=0, f=1MHz

pF

*Pulse Test : Pulse Width 300 S, Duty Cycle 2%

1999. 11. 30

Revision No : 3

1/2

MPSA92/93

fT - IC

300
T j =125 C

100

T j =25 C
T j =-55 C

50
30

10
-3

-5

-10

-30 -50

-100

100

50
30

T j =25 C
VCE =20VDC

0
-1

-3

-30 -50

-10

COLLECTOR CURRENT IC (mA)

COLLECTOR CURRENT IC (mA)

Cob - VR

IC - VCE

100
50

C ib

30

5
3
C ob

-0.3

-1

-3

-10

-30

-100

-300 -1k

REVERSE VOLTAGE VR (V)

-100

BONDING WIRE LIMITATION


SECOND BREAK DOWN
LIMITATION T j =150 C

-500
-300

1.
DC
LI 5 W
M A
IT TT
AT T
IO HE
N RM
Tc A
62
=2 L
LI 5 m
5
M W
C
IT T
AT HE
IO RM
N
Ta AL
=2
5
C

-100
-50
-30

100S

mS

10

1
-0.1

-5

1.0

COLLECTOR OUTPUT CAPACITANCE


Cob (pF)

-1

COLLECTOR CURRENT IC (mA)

DC CURRENT GAIN hFE

VCE =10VDC

TRANSITION FREQUENCY fT (MHz)

hFE - IC

MPSA92

-10
MPSA93

-5
-3

-5

-10

-30 -50

-100

-300

COLLECTOR-EMITTER VOLTAGE VCE (V)

VBE(sat),VCE(sat) - IC

SATURATION VOLTAGE
VBE(sat),VCE(sat) (V)

-1.0
I C /I B =10

-0.8
V BE(sat)

-0.6
-0.4
-0.2
0
-1

VCE(sat)

-3

-5

-10

-30

-50

-100

COLLECTOR CURRENT IC (mA)

1999. 11. 30

Revision No : 3

2/2

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