SOT23 NPN SILICON PLANAR FMMT2222

SWITCHING TRANSISTORS FMMT2222A

ISSUE 3 – FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS E
FMMT2222 – 1BZ FMMT2222A – 1P C
FMMT2222R – 2P FMMT2222AR – 3P
COMPLEMENTARY TYPES B
FMMT2222 – FMMT2907
FMMT2222A – FMMT2907A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
Collector-Base Voltage V 60 75 V
CBO

Collector-Emitter Voltage V 30 40 V
CEO

Emitter-Base Voltage V 5 6 V
EBO

Continuous Collector Current I 600 mA

C
P 330 mW
Power Dissipation at Tamb=25°C tot

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
V
Collector-Base (BR)CBO 60 75 V IC=10mA, IE=0
Breakdown Voltage
V
Collector-Emitter (BR)CEO 30 40 V IC=10mA, IB=0
Breakdown Voltage
V
Emitter-Base (BR)EBO 5 6 V IE=10mA, IC=0
Breakdown Voltage
I
Collector Cut-Off CBO 10 nA VCB=50V, IE=0
Current 10 mA VCB=60V, IE=0
10 nA VCB=50V, IE=0, Tamb=150°C
10 mA VCB=60V, IE=0, Tamb=150°C
I
Emitter Cut-Off EBO 10 10 nA VEB=3V, IC=0
Current
I
Collector-Emitter CEX 10 10 nA VCE=60V, VEB(off)=3V
Cut-Off Current
V
Collector-Emitter CE(sat) 0.3 0.3 V IC=150mA, IB=15mA*
Saturation Voltage 1.0 1.0 V IC=500mA, IB=50mA*
V
Base-Emitter BE(sat) 0.6 2.0 0.6 1.2 V IC=150mA, IB=15mA*
Saturation Voltage 2.6 2.0 V IC=500mA, IB=50mA*
h
Static Forward FE 35 35 IC=0.1mA, VCE=10V*
Current Transfer 50 50 IC=1mA, VCE=10V
Ratio 75 75 IC=10mA, VCE=10V*
35 35 300 IC=10mA, VCE=10V, Tamb=-55°C
100 300 100 IC=150mA, VCE=10V*
50 50 IC=150mA, VCE=1V*
30 40 IC=500mA, VCE=10V*
*Measured under pulsed conditions. Pulse width=300m s. Duty cycle £
2% Spice parameter data is available upon request for this device
 FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Transition fT 250 300 MHz IC=20mA, VCE=20V
Frequency f=100MHz
C
Output Capacitance obo 8 8 pF VCB=10V, IE=0,
f=140KHz
C
Input Capacitance ibo 30 25 pF VEB=0.5V, IC=0
f=140KHz
t
Delay Time d 10 10 ns VCC=30V, VBE(off)=0.5V
Rise Time t 25 25 ns IC=150mA, IB1=15mA
r (See Delay Test Circuit)
Storage Time ts 225 225 ns VCC=30V, IC=150mA
Fall Time t 60 60 ns IB1= IB2=15mA
f (See Storage Test
Circuit)

DELAY AND RISE – TEST CIRCUIT

+30V

Generator rise time <2ns

Pulse width (t1)<200ns 200W
Duty cycle = 2%

619W
9.9V

Scope:
0 Rin > 100 kW
0.5V
Cin < 12 pF
+30V Rise Time < 5 ns

STORAGE TIME AND FALL TIME – TEST CIRCUIT

=100ms

<5ns W
+16.2 V

0
1KW

-3V
Scope:
R > 100 kW

-13.8 V
1N916
C in < 12 pF
Rise Time < 5 ns

=500ms

Duty cycle = 2%