SOT223 NPN SILICON PLANAR MEDIUM

FZT688B POWER HIGH GAIN TRANSISTOR FZT688B

ISSUE 3 - OCTOBER 1995
FEATURES
TYPICAL CHARACTERISTICS * Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A
* Gain of 400 at IC=3 Amps and very low saturation voltage C
APPLICATIONS
IC/IB=200 Tamb=25°C -55°C
IC/IB=100 * Flash gun convertors & Battery powered circuits
0.8 IC/IB=100 0.8
+25°C
E
+100°C
IC/IB=10 +175°C

PARTMARKING DETAIL – FZT688B C

- (Volts)

- (Volts)
0.6 0.6
COMPLEMENTARY TYPE - FZT788B B
0.4 0.4 ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
V

V
0.2 0.2
Collector-Base Voltage VCBO 12 V
0 0
0.01 0.1 1 10 0.01 0.1 1 10 Collector-Emitter Voltage VCEO 12 V
IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage VEBO 5 V

VCE(sat) v IC VCE(sat) v IC Peak Pulse Current ICM 10 A

Continuous Collector Current IC 4 A
Power Dissipation at Tamb=25°C Ptot 2 W
+100°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
1.6 +25°C VCE=2V -55°C
IC/IB=100
1.4
-55°C 1.5K 1.6
+25°C
+100°C
+175°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.4
- Normalised Gain

1.2 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

- (Volts)
- Typical Gain

1.2
1.0 1K
1.0 Breakdown Voltages V(BR)CBO 12 V IC=100µ A
0.8
0.8 V(BR)CEO 12 V IC=10mA*
0.6
500 0.6
0.4 V(BR)EBO 5 V IE=100µ A
V

0.4
0.2
h

0.2 Collector Cut-Off Current ICBO 0.1 µA VCB=10V

h

0 0 0.01 0.1 1 10
0 0.01 0.1 1 10 Emitter Cut-Off Current IEBO 0.1 µA VEB=4V
IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter VCE(sat) 0.04 V IC=0.1A, IB=1mA
Saturation Voltage 0.06 V IC=0.1A,IB=0.5mA*
hFE v IC VBE(sat) v IC
0.18 V IC=1A, IB=50mA*
0.35 V IC=3A, IB=20mA*
0.40 V IC=4A, IB=50mA*
10
-55°C
+25°C VCE=2V Base-Emitter SaturationVoltage VBE(sat) 1.1 V IC=3A, IB=20mA*
1.6
I -Collector Current (A)

+100°C

1.4
+175°C
Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=3A, VCE=2V
Static Forward Current Transfer hFE 500 IC=0.1A, VCE=2V*
- (Volts)

1.2 1
1.0 Ratio 400 IC=3A, VCE=2V*
0.8
DC
1s
100 IC=10A, VCE=2V*
100ms
0.1
Transition Frequency fT 150 MHz IC=50mA,VCE=5V
V

0.6 10ms
1ms
0.4 C
100µs
f=50MHz
0.2 Input Capacitance Cibo 200 pF VEB=0.5Vf=1MHz
0.01
0 0.1V 1V 10V 100V
0 0.01 0.1 1 10 Output Capacitance Cobo 40 pF VCB=10V,f=1MHz
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps) Switching Times ton 40 ns I C=500mA, IB1=50A
Safe Operating Area toff 500 ns IB2=50mA, VCC=10V
VBE(on) v IC
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device

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 SOT223 NPN SILICON PLANAR MEDIUM
FZT688B POWER HIGH GAIN TRANSISTOR FZT688B
ISSUE 3 - OCTOBER 1995
FEATURES
TYPICAL CHARACTERISTICS * Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A
* Gain of 400 at IC=3 Amps and very low saturation voltage C
APPLICATIONS
IC/IB=200 Tamb=25°C -55°C
IC/IB=100 * Flash gun convertors & Battery powered circuits
0.8 IC/IB=100 0.8
+25°C
E
+100°C
IC/IB=10 +175°C

PARTMARKING DETAIL – FZT688B C

- (Volts)

- (Volts)
0.6 0.6
COMPLEMENTARY TYPE - FZT788B B
0.4 0.4 ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
V

V
0.2 0.2
Collector-Base Voltage VCBO 12 V
0 0
0.01 0.1 1 10 0.01 0.1 1 10 Collector-Emitter Voltage VCEO 12 V
IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage VEBO 5 V

VCE(sat) v IC VCE(sat) v IC Peak Pulse Current ICM 10 A

Continuous Collector Current IC 4 A
Power Dissipation at Tamb=25°C Ptot 2 W
+100°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
1.6 +25°C VCE=2V -55°C
IC/IB=100
1.4
-55°C 1.5K 1.6
+25°C
+100°C
+175°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.4
- Normalised Gain

1.2 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

- (Volts)
- Typical Gain

1.2
1.0 1K
1.0 Breakdown Voltages V(BR)CBO 12 V IC=100µ A
0.8
0.8 V(BR)CEO 12 V IC=10mA*
0.6
500 0.6
0.4 V(BR)EBO 5 V IE=100µ A
V

0.4
0.2
h

0.2 Collector Cut-Off Current ICBO 0.1 µA VCB=10V

h

0 0 0.01 0.1 1 10
0 0.01 0.1 1 10 Emitter Cut-Off Current IEBO 0.1 µA VEB=4V
IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter VCE(sat) 0.04 V IC=0.1A, IB=1mA
Saturation Voltage 0.06 V IC=0.1A,IB=0.5mA*
hFE v IC VBE(sat) v IC
0.18 V IC=1A, IB=50mA*
0.35 V IC=3A, IB=20mA*
0.40 V IC=4A, IB=50mA*
10
-55°C
+25°C VCE=2V Base-Emitter SaturationVoltage VBE(sat) 1.1 V IC=3A, IB=20mA*
1.6
I -Collector Current (A)

+100°C

1.4
+175°C
Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=3A, VCE=2V
Static Forward Current Transfer hFE 500 IC=0.1A, VCE=2V*
- (Volts)

1.2 1
1.0 Ratio 400 IC=3A, VCE=2V*
0.8
DC
1s
100 IC=10A, VCE=2V*
100ms
0.1
Transition Frequency fT 150 MHz IC=50mA,VCE=5V
V

0.6 10ms
1ms
0.4 C
100µs
f=50MHz
0.2 Input Capacitance Cibo 200 pF VEB=0.5Vf=1MHz
0.01
0 0.1V 1V 10V 100V
0 0.01 0.1 1 10 Output Capacitance Cobo 40 pF VCB=10V,f=1MHz
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps) Switching Times ton 40 ns I C=500mA, IB1=50A
Safe Operating Area toff 500 ns IB2=50mA, VCC=10V
VBE(on) v IC
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device

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