SOT223 PNP SILICON PLANAR HIGH CURRENT I

FZT957
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3- JANUARY 1996
I
I
FZT958
FEATURES r
* 1 Amp continuous current
* Up to 2 Amps peak current c
* Very low saturation voltage
* Excelient gain characteristics specified up to 1 Amp
E
COMPLEMENTARY TYPES FZT957 FZT857 @ c
FZT958 N/A
B
PARTMARKING DETAILS - DEVICE TYPE IN FULL

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage
1
—5%Fz=l-=-
UNIT

v
Collector-Emitter Voltage VCEO I -300 I -400 v
—— — -—
Emitter-Ease Voltage v Eeo I -6 v
Peak Pulse Curren[ A

Continuous Collector Current A

Power Dissipation at T,~b=25°C Ptot

I 3 w
Operating
Range

*The power which

and Storage Temperature

can be dissipated
—
Tj:T,,g

,assumjng the device

I -55 to +150

is mounted in a typical manner

‘c

on a
P,C.B. with copper equal to 4 square Inch mmlmum

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Eiiiil
ELECTRICAL CHARACTERISTICS (at T.~h
----- = 25°C unless othewvise stated)

PARAMETER SYMBOL MIN. lWP, MAX. UNIT CONDITIONS.

Collector-Base ‘( BR)CBO -330 -440 v l&-l OOLA

Breakdown Voltage

Collector-Emitter ‘lBR)CEf3 -330 -440 v IC=-IWA, RB <lkfJ

Breakdown Voltage

Collector-Emitter ‘( BR)CEO -300 -400 v le-l OmA*

Breakdown Voltage

Emitter-Base ‘{ BR)EBO -6 -8 v IE=-l OOWA

Breakdown Voltage

Collector Cut-Off Current ICBO -50 nA vc~-300v

-1 @ VCF-300V, Tam&l 00”C

Collector Cut-Off Current lCER -50 nA vc&-300v

R <Ikfl -1 @ VCF-300V, T,m~l OO”C

Emitter Cut-Off Current IEBO -lo nA VEr-6V

Collector-Emitter vcE(.at, -60 -1oo mV le-l OOmA, le=-l OmA*

Saturation Voltage -110 -165 mV lF-500mA, IB=-l 00mA*
-170 -240 mV 1~-lA, l@-300mA*

Base-Emitter ‘BE(sat) -910 -1150 mV IF-lA, la=-300mA’

Saturation Voltage

Base-Emitter ‘BE(on) -750 -1020 mV IC=-lA, VCF-IOV’

Turn-On Voltage

Static Forward ‘FE 100 200 1~-10mA, VC=-IOV*

Current Transfer Ratio 100 200 300 le-0.5A, V,-.F-l OV*
90 170 le-lA, Vc~-l OV*
10 IF-2A, Vce-l OV’

Transition Frequency fT 85 MHz lF-lOOmA, VCF- 10V

f=50MHz

Output Capacitance cob. 23 pF VCF-20V, f=l MHz

Switching Times t 108 ns le-500mA, lB1=-50mA

t; 2500 ns lB750mA, VCF-lOOV

*Measured under pulsed conditions. Pulse width=300~s. Duty cycle <2%

Spice parameter data is available upon request for this device

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 FZT957

TYPICAL CHARACTERISTICS

....—_ .— .55C .. ..- . . ,.,, -.. I

, J.!::A
‘>-+---- +175’C, +----w

‘o
>01 01 1 10 2(
o 001 01 1 10 :

Ic - Collector Current (Amps) b Collector Current (Amps)

VCE(aat]V IC VCE(sat)v IC
—.

————
l.. /..-
.:?
.KO’c,
LE=Eit*:

“ o m. 001 01 1 102
Ic - Collector Current (Amps) Ic - Collector Current (Arnpsl

hFEvlC VBE(sat)v IC

02

‘) O(mt ,) ,& 01 1020 lC 100 100

Ic - C.dlector Current (Amps) VCE Collector Voltage (V)

VBE(on) v IC Safe Operating Area

—.——

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