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Tutorial 2

The document discusses oxidation processes used in VLSI technology. It provides examples of calculating oxide layer thicknesses grown on silicon wafers through dry and wet oxidation processes at different temperatures and pressures over varying times. Cross-sections are shown comparing wafer structures before and after secondary oxidation. Consumption of the underlying silicon is also calculated based on material densities and molecular weights.

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112 views1 page

Tutorial 2

The document discusses oxidation processes used in VLSI technology. It provides examples of calculating oxide layer thicknesses grown on silicon wafers through dry and wet oxidation processes at different temperatures and pressures over varying times. Cross-sections are shown comparing wafer structures before and after secondary oxidation. Consumption of the underlying silicon is also calculated based on material densities and molecular weights.

Uploaded by

Priya Apte
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Tutorial -2

VLSI Technology
Topic-Oxidation

Submission- 6th September 2016

1. A uniform oxide layer of 500 nm thick is selectively etched as shown in Figure 1.


Another oxidation on the same wafer grows 250 nm on the bare silicon. Sketch a cross-
section of the wafer after second oxidation in comparison with the wafer before second
oxidation (Show the second grown oxide with a different notation).

SiO2

Si

Figure 1

2. Show from the densities and molecular weights of Si and SiO2 that a layer of silicon of
thickness approximately equal 0.44 d0 is consumed when a SiO2 layer of thickness d0 is
formed. Use density values of 2.27 gm/cm3 for SiO2 and 2.33 gm/cm3 for Si. And
consider molecular weight of 60.08 gm/mol for SiO2 and 28.08 gm/mol for Si.

3. Calculate the time required to grow oxide of thickness 200 nm over the silicon wafer with
800 nm thick oxide. Assume it is a wet oxidation at 1100 C and the wafer is slightly p-
doped with orientation <100>. Given pre-exponential constants for parabolic and linear
rate constant are 2.14102 m2hr-1, and 5.33107 m2hr-1 respectively; activation energy
for parabolic and linear rate constant are 0.71 eV, and 2.05 eV respectively.

4. Using Deal-Grove model, calculate the thickness of SiO2 grown after 20 minutes of dry
oxidation followed by 4 hours of wet oxidation followed by 20 minutes of dry oxidation
at 900 C. Calculate the thickness of silicon wafer after oxidation if the initial wafer
thickness is 500 m. Use parabolic and linear rate constants from above problem.

5. (a) In a particular oxidation system carried out at atmospheric pressure, the oxide
thickness is 0.2 m after 1hr, 0.35 m after 2 hrs and 0.5 m after 3 hrs. Calculate the
values of parabolic (B) and linear rate constants (B/A).
(b) If the oxidation temperature remains the same but the pressure is increased to 10
atmospheres, what will be the oxide thickness after 2 hours?

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