INTEGRATED CIRCUITS

DATA SHEET

TDA2616/TDA2616Q
2 x 12 W hi-fi audio power
amplifiers with mute
Product specification July 1994
File under Integrated Circuits, IC01
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers

TDA2616/TDA2616Q
with mute

FEATURES GENERAL DESCRIPTION

Requires very few external components The TDA2616 and TDA2616Q are dual power amplifiers.
No switch-on/switch-off clicks The TDA2616 is supplied in a 9-lead single-in-line (SIL9)
plastic power package (SOT131), while the TDA2616Q is
Input mute during switch-on and switch-off
supplied in a 9-lead SIL-bent-to-DIL plastic power package
Low offset voltage between output and ground (SOT157). They have been especially designed for mains
Excellent gain balance of both amplifiers fed applications, such as stereo radio and stereo TV.
Hi-fi in accordance with IEC 268 and DIN 45500
Short-circuit proof and thermal protected
Mute possibility.

QUICK REFERENCE DATA

Stereo application
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VP supply voltage range 7.5 21 V
PO output power VP = 16 V; THD = 0.5% 12 W
Gv internal voltage gain 30 dB
Gv channel unbalance 0.2 dB
channel separation 70 dB
SVRR supply voltage ripple rejection 60 dB
Vno noise output voltage 70 V

ORDERING INFORMATION

EXTENDED TYPE PACKAGE

NUMBER PINS PIN POSITION MATERIAL CODE
TDA2616 9 SIL plastic SOT131(1)
TDA2616Q 9 SIL-bent-to-DIL plastic SOT157(2)

Notes
1. SOT131-2; 1996 August 27.
2. SOT157-2; 1996 August 27.

July 1994 2
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

+ VP

handbook, full pagewidth 7

VA

V ref1 TDA2616

20 k
680
VB CM
1
INV1
20 k 4
OUT1

2 4 k
MUTE
VP
5 k
+ VP

V ref3

10 k
+ VP

+ V ref2
Vref1 THERMAL
3 PROTECTION
1/2 V P / GND
voltage
comparator

VA V B
10 k
V ref2

VP VP

20 k 6
OUT2
9 CM
INV2

8 680 VB
INV1, 2 20 k

V ref1

VA
5
MCD375 - 1

VP

Fig.1 Block diagram.

July 1994 3
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

PINNING FUNCTIONAL DESCRIPTION

SYMBOL PIN DESCRIPTION The TDA2616 is a hi-fi stereo amplifier designed for mains
fed applications, such as stereo radio and TV. The circuit
INV1 1 non-inverting input 1
is optimally designed for symmetrical power supplies, but
MUTE 2 mute input is also well-suited to asymmetrical power supply systems.
1/2VP/GND 3 1/2 supply voltage or ground
An output power of 2 12 W (THD = 0.5%) can be
OUT1 4 output 1 delivered into an 8 load with a symmetrical power supply
VP 5 supply voltage (negative) of 16 V. The gain is internally fixed at 30 dB, thus offering
OUT2 6 output 2 a low gain spread and a very good gain balance between
the two amplifiers (0.2 dB).
+VP 7 supply voltage (positive)
INV1, 2 8 inverting inputs 1 and 2 A special feature is the input mute circuit. This circuit
disconnects the non-inverting inputs when the supply
INV2 9 non-inverting input 2
voltage drops below 6 V, while the amplifier still retains its
DC operating adjustment. The circuit features suppression
of unwanted signals at the inputs, during switch-on and
handbook, halfpage switch-off.
INV1 1
The mute circuit can also be activated via pin 2. When a
MUTE 2
current of 300 A is present at pin 2, the circuit is in the
1/2 VP / GND 3 mute condition.
OUT1 4 The device is provided with two thermal protection circuits.
VP
One circuit measures the average temperature of the
5 TDA2616
crystal and the other measures the momentary
OUT2 6 temperature of the power transistors. These control
+ VP 7
circuits attack at temperatures in excess of +150 C, so a
crystal operating temperature of max. +150 C can be
INV1, 2 8 used without extra distortion.
INV2 9
With the derating value of 2.5 K/W, the heatsink can be
MCD372 - 1 calculated as follows:
at RL = 8 and VP = 16 V, the measured maximum
Fig.2 Pin configuration. dissipation is 14.6 W.
With a maximum ambient temperature of +65 C, the
thermal resistance of the heatsink is:
150 65
R th = ---------------------- 2.5 = 3.3 K/W.
14.6

The internal metal block has the same potential as pin 5.

July 1994 4
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

LIMITING VALUES
In accordance with the Absolute maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VP supply voltage 21 V
IOSM non-repetitive peak output current 4 A
Ptot total power dissipation see Fig.3 25 W
Tstg storage temperature range 55 +150 C
TXTAL crystal temperature +150 C
Tamb ambient operating temperature range 25 150 C
tsc short circuit time short-circuit to ground; note 1 1 h

Note to the limiting values

1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to
VP = 28 V and with an internal supply resistance of RS 4 , the maximum unloaded supply voltage is limited to 32 V
(with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to VP = 21 V.

MCD376 - 2
32
handbook, halfpage
Ptot
(W)
24
infinite
heatsink

16
R th-hs= 3.3 K/W

0
25 0 50 100 150
Tamb ( o C)

Fig.3 Power derating curve.

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

Rth j-a from junction to ambient in free air 2.5 K/W

July 1994 5
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply
VP supply voltage range 16 21 V
IORM repetitive peak output current 2.2 A
Operating position; note 1
VP supply voltage range 7.5 16 21 V
IP total quiescent current RL = 18 40 70 mA
PO output power
THD = 0.5% 10 12 W
THD = 10% 12 15 W
THD total harmonic distortion PO = 6 W 0.15 0.2 %
B power bandwidth THD = 0.5%; note 2 20 to Hz
20 000
Gv voltage gain 29 30 31 dB
Gv gain unbalance 0.2 1 dB
Vno noise output voltage note 3 70 140 V
Zi input impedance 14 20 26 k
SVRR supply voltage ripple rejection note 4 40 60 dB
channel separation RS = 0 46 70 dB
Ibias input bias current 0.3 A
VGND DC output offset voltage 30 200 mV
V4-6 DC output offset voltage between two channels 4 150 mV
MUTE POSITION (AT IMUTE 300 A)
VO output voltage VI = 600 mV 0.3 1.0 mV
Z2-7 mute input impedance note 7 6.7 9 11.3 k
IP total quiescent current RL = 18 40 70 mA
Vno noise output voltage note 3 70 140 V
SVRR supply voltage ripple rejection note 4 40 55 dB
VGND DC output offset voltage 40 200 mV
Voff offset voltage with respect to operating 4 150 mV
position
I2 current if pin 2 is connected to pin 5 8.2 mA
Mute position; note 5
VP supply voltage range 2 5.8 V
IP total quiescent current RL = 9 30 40 mA
VO output voltage VI = 600 mV 0.3 1.0 mV
Vno noise output voltage note 3 70 140 V
SVRR supply voltage ripple rejection note 4 40 55 dB

July 1994 6
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VGND DC output offset voltage 40 200 mV
Operating position; note 6
IP total quiescent current 18 40 70 mA
PO output power
THD = 0.5% 5 6 W
THD = 10% 6.5 8 W
THD = 0.5%; RL = 4 10 W
THD = 10%; RL = 4 14 W
THD total harmonic distortion PO = 4 W 0.13 0.2 %
B power bandwidth THD = 0.5%; note 2 40 to Hz
20 000
Gv voltage gain 29 30 31 dB
Gv gain unbalance 0.2 1 dB
Vno noise output voltage note 3 70 140 V
Zi input impedance 14 20 26 k
SVRR supply voltage ripple rejection 35 44 dB
channel separation 45 dB
MUTE POSITION (IMUTE 300 A)
VO output voltage VI = 600 mV 0.3 1.0 mV
Z2-7 mute input impedance note 7 6.7 9 11.3 k
IP total quiescent current 18 40 70 mA
Vno noise output voltage note 3 70 140 V
SVRR supply voltage ripple rejection note 4 35 44 dB
Voff offset voltage with respect to operating 4 150 mV
position
I2 current if pin 2 is connected to pin 5 8.2 mA
Notes to the characteristics
1. VP = 16 V; RL = 8 ; Tamb = 25 C; f = 1 kHz; symmetrical power supply IMUTE < 30 A. See Fig.4
2. The power bandwidth is measured at an output power of PO max 3 dB
3. The noise output voltage (RMS value) is measured at RS = 2 k, unweighted (20 Hz to 20 kHz)
4. The ripple rejection is measured at RS = 0 and f = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at
f = 1 kHz
5. VP = 4 V; RL = 8 ; Tamb = 25 C; f = 1 kHz; symmetrical power supply. See Fig.4
6. VP = 24 V; RL = 8 ; Tamb = 25 C; f = 1 kHz; asymmetrical power supply IMUTE < 30 A. See Fig.5
7. The internal network at pin 2 is a resistor devider of typical 4 k and 5 k to the positive supply rail. At the connection
of the 4 k and 5 k resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread
of the zener voltage is 6.1 to 7.1 V.

July 1994 7
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

mute input + VP
handbook, full pagewidth
2200 F
2 7

680 20 k

220 nF 4
VI 1
22 nF
20 k

3 TDA2616 8.2
R L= 8

20 k
220 nF 100 nF
VI 9
6

22 nF

8 680 20 k
8.2
R L= 8

VP
MCD374 - 3
2200 F

Fig.4 Test and application circuit with symmetrical power supply.

July 1994 8
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

VP RS
mute input VS
handbook, full pagewidth
100 nF 2200 F
2 7

680 20 k

220 nF 4
1
VI
22 nF
680 F
20 k

3 8.2
R L= 8
internal
100 F 1/2 VP TDA2616

20 k
220 nF
9
VI
6

22 nF
680 F
8 680 20 k

8.2
R L= 8
5

MCD373 - 2

Fig.5 Test and application circuit with asymmetrical power supply.

July 1994 9
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

PACKAGE OUTLINES

SIL9P: plastic single in-line power package; 9 leads SOT131-2

non-concave
Dh
x

Eh

view B: mounting base side

d A2

B
seating plane

j E

A1

c
1 9

Z e w M Q
bp
0 5 10 mm
scale

DIMENSIONS (mm are the original dimensions)

A1 b
UNIT A2 max. bp c D (1) d Dh E (1) e Eh j L Q w x Z (1)
max.
4.6 0.75 0.48 24.0 20.0 12.2 6 3.4 17.2 2.1 2.00
mm 2.0 1.1 10 2.54 0.25 0.03
4.2 0.60 0.38 23.6 19.6 11.8 3.1 16.5 1.8 1.45

Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

92-11-17
SOT131-2
95-03-11

July 1994 10
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm) SOT157-2

non-concave
Dh
x
D

Eh

view B: mounting base side

d A2

j E

L3

L Q

1 9

Z e1 w M m e2 v M
bp
e

0 5 10 mm
scale

DIMENSIONS (mm are the original dimensions)

UNIT A A2 bp c D (1) d Dh E (1) e e1 e2 Eh j L L3 m Q v w x Z (1)

17.0 4.6 0.75 0.48 24.0 20.0 12.2 6 3.4 12.4 2.4 2.1 2.00
mm 10 5.08 2.54 5.08 4.3 0.8 0.25 0.03
15.5 4.2 0.60 0.38 23.6 19.6 11.8 3.1 11.0 1.6 1.8 1.45

Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

92-10-12
SOT157-2
95-03-11

July 1994 11
Philips Semiconductors Product specification

2 x 12 W hi-fi audio power amplifiers with

TDA2616/TDA2616Q
mute

SOLDERING The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the
Introduction specified maximum storage temperature (Tstg max). If the
There is no soldering method that is ideal for all IC printed-circuit board has been pre-heated, forced cooling
packages. Wave soldering is often preferred when may be necessary immediately after soldering to keep the
through-hole and surface mounted components are mixed temperature within the permissible limit.
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for Repairing soldered joints
printed-circuits with high population densities. In these
Apply a low voltage soldering iron (less than 24 V) to the
situations reflow soldering is often used.
lead(s) of the package, below the seating plane or not
This text gives a very brief insight to a complex technology. more than 2 mm above it. If the temperature of the
A more in-depth account of soldering ICs can be found in soldering iron bit is less than 300 C it may remain in
our IC Package Databook (order code 9398 652 90011). contact for up to 10 seconds. If the bit temperature is
between 300 and 400 C, contact may be up to 5 seconds.
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

July 1994 12