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Model1 ED

This document is an exam for the course Electronic Devices. It contains 15 multiple choice questions testing knowledge of electronic components and devices including diodes, transistors, FETs, SCRs, TRIACs, UJTs and MOSFETs. The exam is divided into two parts - Part A contains 10 short answer questions worth 2 marks each, and Part B contains 5 longer answer questions worth 16 marks each. The questions test understanding of topics like PN junction operation, switching characteristics of diodes, transistor characteristics, FET pinch-off regions, SCR operation, and applications of components like LEDs, CCDs, DIACs and TRIACs. Students are instructed to answer all questions and are

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109 views2 pages

Model1 ED

This document is an exam for the course Electronic Devices. It contains 15 multiple choice questions testing knowledge of electronic components and devices including diodes, transistors, FETs, SCRs, TRIACs, UJTs and MOSFETs. The exam is divided into two parts - Part A contains 10 short answer questions worth 2 marks each, and Part B contains 5 longer answer questions worth 16 marks each. The questions test understanding of topics like PN junction operation, switching characteristics of diodes, transistor characteristics, FET pinch-off regions, SCR operation, and applications of components like LEDs, CCDs, DIACs and TRIACs. Students are instructed to answer all questions and are

Uploaded by

skrtamil
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Reg. No.

DHANALAKSHMI SRINIVASAN INSTITUTE OF TECHNOLOGY


B.E Model Examinations-I -2017
Department of General Engineering
Second Semester
EC6201 - ELECTRONIC DEVICES
Electronics and Communication Engineering

Duration:3 Hrs Total: 100 Marks

Answer ALL questions


PART-A (2 10=20)

1. Define mass action law.

2. Consider a Si PN junction at T=300 K with doping concentrations of Na = 1016 cm3


and Nd = 1015 cm3 . Assume that ni = 1.5 1010 cm3 . Calculate width of the space
charge region in a PN junction, when a reverse biase voltage VR = 5V is applied.

3. Define storage time.

4. Compare JFET with BJT.

5. Give some applications of JFET.

6. Draw the symbol of dual gate MOSFET.

7. Sketch the graph symbol for n-channel and p-channel MOSFET.

8. Draw the V-I characteristics of an UJT.

9. What is meant by regenerative action of SCR?

10. List the advantages of TRIAC over SCR.

PART-B (5 16=80)

11. (a) i. Describe the action of PN junction diode under forward bias and reverse bias. [10]
ii. Explain the switching characteristics of diode. [6]
Or
(b) The diode current is 0.6 mA when the applied voltage is 400 mV and 20 mA when [16]
the applied voltage is 500 mV. Determine . Assume kTq
= 25mV.

12. (a) Draw a circuit diagram for obtaining the drain and transfer characteristics for an [16]
N channel JFET.
Or
(b) i. With the help of a suitable diagram, explain the working of E-MOSFET and [12]
D-MOSFET.
ii. What is channel length modulation in MOSFET? [4]

13. (a) i. Derive the expression for drift current density. [12]
ii. The reverse saturation of a silicon PN junction diode is 10A. Calculate the [4]
diode current for the forward bias voltage of 0.6 V at 25o C.
Or
(b) Derive an expression for drain current of FET in pinch off region with necessary [16]
diagram.

14. (a) Give the construction details of UJT and explain its operation with the help of [16]
equivalent circuits.
Or
(b) Explain the operation, characteristics and applications of SCR. [16]

15. (a) i. Explain the operation of a DMOS and VMOS transistor. [8]
ii. Describe the operation of LED and CCD and list out its applications. [8]
Or
(b) Draw the V-I characteristics and explain the operation of the following:
i. DIAC. [8]
ii. TRIAC. [8]

Best Wishes

Page 2

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