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B.E. ECE Electronic Devices Course Plan

This document provides a lecture plan for the subject "Electronic Devices & Circuits" taught by G.R. Mahendra Babu. The plan outlines 5 units to be covered over 58 hours including 48 hours of theory and 10 hours of tutorials. Unit topics include semiconductor diodes, bipolar transistors, field effect transistors, DC power supplies, and integrated circuit fabrication. Each unit lists the relevant topics, duration, and teaching aids to be used for each topic. Textbooks and additional references are also listed.

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Mahendra Babu
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0% found this document useful (0 votes)
100 views4 pages

B.E. ECE Electronic Devices Course Plan

This document provides a lecture plan for the subject "Electronic Devices & Circuits" taught by G.R. Mahendra Babu. The plan outlines 5 units to be covered over 58 hours including 48 hours of theory and 10 hours of tutorials. Unit topics include semiconductor diodes, bipolar transistors, field effect transistors, DC power supplies, and integrated circuit fabrication. Each unit lists the relevant topics, duration, and teaching aids to be used for each topic. Textbooks and additional references are also listed.

Uploaded by

Mahendra Babu
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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LECTURE PLAN

NAME OF THE STAFF: G.R. MAHENDRA BABU


DESIGNATION : ASSISTANT PROFESSOR
CLASS : B.E-II YEAR ECE
SUBJECT : ELECTRONIC DEVICES & CIRCUITS
SUBJECT CODE : 16BEEC302

S.No. TOPICS TO BE COVERED TIME TEACHING AIDS


DURATION
UNIT-I SEMICONDUCTOR DIODES AND SPECIAL PURPOSE DIODES
1 Introduction 3
2 Overview on Physics and Properties of 1 T1-Pg.No: 42-46, 56, 85
Semiconductors: Intrinsic semiconductor
& extrinsic semiconductor
3 Fermi level in an intrinsic 1 T1-Pg.No:93,60-65
semiconductor conductivity y of a
metal
4 conductivity y of an intrinsic 1 T1-Pg.No: 86-87, 100-
semiconductor and extrinsic 101
semiconductor
5 Drift diffusion recombination carrier 1 T1-Pg.No:102-104
life time.
6 Tutorial 1
7 Formation of PN junction working 1 T1-Pg.No: 113-117,120-
principle VI characteristics PN diode 128
currents- diode current equation
8 Diode resistance transition and 1 T1-Pg.No:130-141,143-
diffusion capacitance diode models 146
voltage breakdown in diodes.
9 Special purpose diodes : Zener diode 1 T1-Pg.No:143-146,163-
point-contact diode backward diode 164
10 varactor diode step- recover y diode 1 T1-Pg.No:137, R3-
Pg.No:105
11 schottky diode, PNPN diode RF diode 1 T1-Pg.No:164-170
12 Tutorial 1
Total (Theory + Tutorial) 14 Hrs (12+2)
UNIT II BIPOLAR TRANSISTORS
1 Bipolar Transistors: Construction 2 T1-Pg.No:255-256,259-
working 261
2 transistor currents 1 T1-Pg.No:257-259,261-
262
3 transistor configurations and input- output 2 T1-Pg.No:264-268,274
characteristics
4 Early effect (base width modulation) 1 T1-Pg.No:265
5 Tutorial 1
6 Ebers Moll model 1 T1-Pg.No:262,277
7 transistor as an amplifier 1 T1-Pg.No:259
8 Transistor as a switch. 1 T1-Pg.No:293-298
9 Tutorial 1
Total (Theory + Tutorial) 11 Hrs (9+2)
UNIT III FIELD EFFECT TRANSISTORS
1 Field-Effect Transistors: construction, 2 T1-Pg.No:462-469
working and VI characteristics of JFET
2 comparison of BJT and JFET 1 W1,W2
3 MOSFET enhancement MOSFET, 2 T1-Pg.No:472-475
depletion MOSFET, their working
principle and VI characteristics,
4 Tutorial 1
5 comparison of MOSFET with JFET 1 W3,W4
6 Comparison of D-MOSFET with E 2 W5
MOSFET
7 CMOS, MESFET, CCD. 1 W6,W7,w8
8 Tutorial 1
Total (Theory + Tutorial) 11 Hrs (9+2)
UNIT IV DC POWER SUPPLIES
1 Rectifiers and Filters: Block schematic of 1
a typical DC power supply
2 Single phase HWR, FWR, full- wave 1
bridge rectifier
3 Power supply filters (ripple factor and 1
efficiency analysis)
4 Bleeder resistor, voltage dividers 1
5 Voltage regulators: voltage regulation, 1
6 Tutorial 1
7 Zener diode shunt regulator, transistor 1
series regulator
8 Transistor shunt regulator 1
9 Switching regulators 1
10 Design of complete DC power supply 1
circuit
11 Tutorial 1
Total (Theory + Tutorial) 11 Hrs (9+2)

UNIT V INTEGRATED CIRCUIT FABRICATION


1 Integrated circuit advantages and 1 R7-Pg.No:1
drawback of ICs
2 Scale of integration classification of ICs 1 R7-Pg.No:2-3
3 Definition of linear IC and digital IC 2 R7-Pg.No:1-2
with examples
4 manufacturing process of monolithic ICs 2 T1-Pg.No:500-508
5 Tutorial 1
6 Fabrication of components (diode, 2 T1-Pg.No:509-517
capacitor, bipolar transistor and
resistor) on monolithic IC
7 Comparison of MOS ICs and bipolar ICs. 1
8 Tutorial 1
Total (Theory + Tutorial) 11 Hrs (9+2)
Total Lecture: 58 Hours (48+10)

TEXT BOOKS:
Year of
S.NO Author(s) Name Title of the book Publisher
publication
Electronic devices Tata McGraw
1 Millman and Halkias Hill 2010
and Circuits
International
Fundamental of
2 David A.Bell electronic devices Oxford press 2009
and circuits

REFERENCES:
Year of
S.NO. Author(s) Name Title of the book Publisher
publication
Solid State Electronic Prentice Hall
1 Street Man Of India,6th 2005
Devices'
edition
Mathur Kulshrestha and Electron devices and Umesh
2 Applications and 2005
Chadha Publications
Integrated circuits'
Charles and
3 Thomas L. Flo yd Electron Devices Messil 2012
Publications
G.K.Mithal Electronic Devices and Khanna 2013
4
Circuits Publishers
Robert L. Bo ylestad and Pearson
Electronic Devices and Education, 9th
5 Louis Nashelsk y 2009.
Circuit Theor y Edition,

B. Somanathan Nair Electronic Devices and PHI, 2006


6
Applications

ADDITIONAL REFERENCES:

7. D.roy Choudhury, Linear Integrated New Age 2010


Shail B.jain Circuits International
Limited

Websites:
1. http://www.rfwireless-world.com/Terminology/BJT-vs-FET.html
2. http://swissen.in/JFETvsBJT.php
3. http://www.circuitstoday.com/jfet-and-mosfet-comparison
4. http://www.electricalbasicprojects.com/mosfet-vs-jfet-comparison/
5. http://www.rfwireless-world.com/Terminology/Depletion-MOSFET-vs-Enhancement-
MOSFET.html.
6. https://en.wikipedia.org/wiki/CMOS
7. http://www.radio-electronics.com/info/data/semicond/fet-field-effect-transistor/gaasfet-
mesfet-basics.php
8. https://www.elprocus.com/know-about-the-working-principle-of-charge-coupled-
device/

FACULTY IN-CHARGE HOD/ECE

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