Freescale Semiconductor Document Number: P1016EC

Data Sheet: Technical Data Rev. 4, 03/2012

P1016
P1016 QorIQ Integrated
Processor Hardware
Specifications

The following list provides an overview of the feature set: One four-channel DMA controller
A high-performance 32-bit core, built on Power Two I2C controllers, DUART, timers
Architecture technology: Enhanced local bus controller (eLBC)
36-bit physical addressing QUICC Engine block
Double-precision floating-point support Operating junction temperature (Tj) range: 0125C and
32 Kbyte L1 instruction cache and 32 Kbyte L1 data 40C to 125C (industrial specification)
cache for each core 23 23 mm 561-pin TePBGA (Temperature-enhanced
400 MHz to 667 MHz clock frequency Plastic BGA)
256 Kbyte L2 cache with ECC. Also configurable as
SRAM and stashing memory.
Three 10/100/1000 Mbps enhanced three-speed Ethernet
controllers (eTSECs)
TCP/IP acceleration, quality of service, and
classification capabilities
IEEE 1588 support
Lossless flow control
MII, RMII, RGMII, SGMII
High-speed interfaces supporting various multiplexing
options:
Four SerDes upto 2.5 GHz/lane multiplexed across
controllers
Two PCI Express interfaces
Two SGMII interfaces
High-Speed USB controller (USB 2.0)
Host and device support
Enhanced host controller interface (EHCI)
ULPI interface to PHY
Enhanced secure digital host controller (SD/MMC)
Enhanced Serial peripheral interface (eSPI)
Integrated security engine
Protocol support includes ARC4, 3DES, AES,
RSA/ECC, RNG, single-pass SSL/TLS
XOR acceleration
32-bit DDR3 SDRAM memory controller with ECC
support
Programmable interrupt controller (PIC) compliant with
OpenPIC standard

2012 Freescale Semiconductor, Inc. All rights reserved.

 Table of Contents
1 Pin Assignments and Reset States. . . . . . . . . . . . . . . . . . . . . .3 2.16 JTAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
1.1 Ball Layout Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2.17 I2C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
1.2 Pinout Assignments . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 2.18 High-Speed Serial Interfaces (HSSI) . . . . . . . . . . . . . . 78
2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 2.19 PCI Express. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
2.1 Overall DC Electrical Characteristics . . . . . . . . . . . . . .29 3 QUICC Engine Block Specifications . . . . . . . . . . . . . . . . . . . 89
2.2 Power Sequencing . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 3.1 Ethernet Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
2.3 Power Down Requirements . . . . . . . . . . . . . . . . . . . . .33 3.2 HDLC, BISYNC, Transparent, and Synchronous UART
2.4 RESET Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . .33 Interfaces. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
2.5 Power-on Ramp Rate . . . . . . . . . . . . . . . . . . . . . . . . . .34 3.3 TDM/SI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
2.6 Power Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .34 3.4 UTOPIA Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
2.7 Input Clocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 3.5 SPI Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
2.8 DDR3 SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 3.6 GPIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
2.9 eSPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46 4 Thermal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
2.10 DUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48 4.1 Thermal Characteristics. . . . . . . . . . . . . . . . . . . . . . . 101
2.11 Ethernet: Enhanced Three-Speed Ethernet (eTSEC) 4.2 Temperature Diode . . . . . . . . . . . . . . . . . . . . . . . . . . 102
(10/100/1000 Mbps)MII/RMII/RGMII/SGMII Electrical 5 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 5.1 Package Parameters for the P1016 WB-TePBGA. . . 102
2.12 USB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 5.2 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . 104
2.13 Enhanced Local Bus . . . . . . . . . . . . . . . . . . . . . . . . . . .68 6 Product Documentation. . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
2.14 Enhanced Secure Digital Host Controller (eSDHC) . . .71 7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
2.15 Programmable Interrupt Controller (PIC) Specifications73

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

2 Freescale Semiconductor
 Pin Assignments and Reset States

This figure shows the major functional units within the P1016.

P1016

Security Power Architecture DDR3

Acceleration e500 Core SDRAM Controller
256 Kbyte
32 Kbyte 32 Kbyte L2 Cache
XOR DUART,
L1 L1
I-Cache D-Cache 2 I2C, Timers,
Interrupt Control,
SD/MMC, SPI,
Power USB 2.0/ULPI
Management
Coherency Module Enhanced
Local Bus Controller
I-Cache
System Bus (eLBC)

QUICC Engine Block On-Chip Network

3 Gigabit
Ethernet 2 PCI Express 4-ch DMA
Accelerators 32-bit RISCs Serial DMA

Baud Rate 64 K 24 K Interrupt 4-lane SERDES

Generators IRAM MURAM Controller
UCC1

UCC3

UCC5

UCC7

SPI

Eth Mgmt

Time Slot Assigner

Communications Interfaces

Up To UTOPIA MII RMII

4 T1/E1

Core Acceleration Interface

Figure 1. P1016 Block Diagram

1 Pin Assignments and Reset States

1.1 Ball Layout Diagrams
The following figures show the top view of the 561-pin BGA ball map diagram and detailed quadrant views.

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 3
Pin Assignments and Reset States

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

USB_
A NC1 NC2 LAD13 LGPL0 LA20 LCLK1 LCLK0 LAD15 LAD06 LAD02 CE_PB3 LDP0 LAD07 LAD03 LA18 LA27 LA25 LA26 LA31 LA19 CE_PB8 USB_D1 USB_D2 USB_D6 USB_D5 CLK VSS A

CE_ USB_ SPI_ SPI_

USB_
B MDIC00 NC11 LAD09 LA22 LWE0_B VSS LCS6_B LCS5_B VSS LAD00 LDP1 VSS LBCTL LGPL2 VSS LA16 LA17 VSS LA23 PB13 VSS USB_D4
NXT
VSS PWR CS3_B CS2_B
B
FAULT
CE_ CE_ USB_ USB_ SPI_ SPI_ SPI_
C MA10 MCS1_B MA13 VSS LWE1_B LCS1_B LGPL4 BVDD LCS7_B LAD05 BVDD LGPL5 LAD04 BVDD LA21 LAD01 BVDD LA28 LA30 PB12 PB30 DIR STP MOSI CS0_B VSS MISO C

CE_ SDHC_ SDHC_ SDHC_

D MCK2 MCK2_B MCS0_B MDIC1 LGPL3 LCS4_B VSS LGPL1 LAD10 VSS LAD12 THERM1 VSS LCS2_B LCS0_B VSS LCS3_B LA24 VSS PA15 CE_PC0 VSS USB_D3 SPI_CLK CLK DAT0 DAT2 D

AVDD_ CE_ CE_ IIC1_ IIC1_

E MRAS_B VSS MA00 VSS MODT1 BVDD NC23 LAD11 LAD14 LALE CE_PB2 THERM0 NC22 NC117 BVDD
CORE0
VSS LAD08 LA29 PB29 PB31 USB_D0 USB_D7 SPI_CS1 VSS
SCL SDA E
_B

SDHC_ SDHC_ IIC2_ IIC2_ UART_

F MA01 MA04 MWE_B MCAS_B NC12 CMD DAT1 SDA SCL CTS0_B F

SDHC_ UART_ UART_ UART_ UART_

G MA05 VSS MBA0 MODT0 NC13
DAT3 SIN1 SIN0 CTS1_B SOUT1 G
SEE DETAIL A SEE DETAIL B
MAPAR_ UART_ UART_ UART_ UDE0
H OUT
MA08 MA02 MBA1 NC14
RTS0_B
VSS
SOUT0 RTS1_B _B
H

CE_
J MCK3_B MCK3 MA06 VSS MVREF BVDD BVDD BVDD BVDD BVDD BVDD BVDD BVDD BVDD CVDD CVDD IRQ01 UDE1 RTC IRQ02 PB10 J
_B

NC110 NC111 NC112 CVDD_ CVDD_ BVDD_

K MCK0_B MCK0 MA09 NC15 NC24 GVDD VDDC VDDC VDDC VDDC VDDC VDDC CVDD IRQ00
VSEL0 VSEL1
VSS
VSEL1
K

MAPAR_ NC113 BVDD_

L MA07 MA03 MA12
ERR_B
NC16 GVDD VSS VSS VSS VSS VSS VSS VSS VDDC CVDD
VSEL0
IRQ05 MCP1_B MDVAL IRQ03 L

NC114 LVDD_ MSR MSR

M MA11 VSS MBA2 MA14 MA15 GVDD VSS VSS VSS VSS VSS VSS VSS VDDC OVDD IRQ04 VSS VSEL CID4 CID3
M

N MCKE1 MCKE0 GVDD MECC02 NC17 GVDD VDDC VSS VSS VSS VSS VSS VSS VSS VDDC OVDD CE_PB7 IRQ_OUT MSR MSR CE_PB1 N
_B CID0 CID2

CE_ CE_ CE_ MSR

P MDQS8 MDQS8 MECC06 VSS MECC07 GVDD VDDC VSS VSS VSS VSS VSS VSS VSS VDDC OVDD PB6 PB11 PA31 VSS
CID1 P
_B
DMA1_
R MECC03 MDM8 GVDD MECC01 MECC04 GVDD VDDC VSS VSS VSS VSS VSS VSS VSS VDDC OVDD CE_PB0 VSS CE_PB4 DACK0_ CE_PB5 R
B
CFG_ TRIG_ HRESET DMA1_
AVDD_
T MECC00 VSS MECC05 MDQ27 NC18 GVDD VDDC VSS VSS VSS VSS VSS VSS VSS VDDC
PLAT
VSS MEM_
OUT _REQ_B DDONE0 T
DEBUG _B

MDQ26 MDM3 GVDD MDQ_25 MDQ30 TMS TCK CLK_ VSS SYSCLK
U GVDD VDDC VSS VSS VSS VSS VSS VSS VSS VDDC OVDD OUT U

DMA1_ SCAN_
V MDQS3 MDQS3 MDQ29 VSS MDQ24 GVDD VDDC VDDC VDDC SVDD XVDD SVDD VDDC VDDC VDDC LVDD TDI CE_PB18 ASLEEP DREQ0
MODE_B
V
_B _B

MDQ31 VSS MDQ28 MDQ17 NC21 AVDD_ SD_IMP SDAVDD SDAVSS SD_IMP NC20 TDO VSS CKSTP_ CKSTP_ TRST
W GVDD NC19
DDR _CAL_RX _CAL_TX
LVDD LVDD LVDD
OUT0_B IN0_B _B
W
CFG_
CKSTP_ CKSTP_
Y MDQ18 MDQS2 MDQS2 VSS MDQ19 DDR_ HRESET SRESET
OUT1_B IN1_B Y
_B DEBUG _B _B
SEE DETAIL C SEE DETAIL D TEST_ READY MCP0 TRIG
AA MDQ23 MDQ22 MDM2 MDQ16 NC3
SEL_B _P1 _B VSS _IN AA

TSEC1_ TSEC3_ TSEC3_ CFG_

AB MDQ21 VSS MDQ20 MDQ10 NC4
TXD1
VSS
RX_ER TX_CLK IO_ AB
PORTS3

SD_PLL NC5 SD_PLL NC6 NC7 TSEC_ TSEC3 TSEC1 TSEC1 TSEC3 TSEC1 TSEC3_ CFG_
NC8
AC MDQ14 MDQ11 MDQ15 GVDD NC9 VSS DDRCLK NC10 SVSS SVSS XVSS
_TPD _TPA
XVSS 1588_CLK _RXD1 _TX_CLK _TXD3 _RXD0 _RXD3 LVDD GTX_ DRAM_ AC
_OUT CLK TYPE
TSEC_
SD_REF TSEC1 TSEC1 TSEC1 TSEC1 TSEC3
AD MDQS1 MDQS1 MDQ13 MDQ12 MDQ07 MDQ01 VSS SVDD SD_RX_ XVDD SD_TX_ SVSS
_CLK
SVDD SD_TX XVDD SD_RX_ SVSS 1588_PUL VSS
_RX_ER _TX_EN
VSS
_COL _TXD0
VSS
_TX_EN
AD
_B _0 1 __2 _3 SE_OUT2
TSEC_ TSEC_
SD_REF TSEC3 TSEC1 TSEC1 TSEC1 TSEC1 TSEC1
AE MDQ08 MDQ09 MDM1 VSS MDQ06 GVDD VSS SVSS SD_RX_ XVSS SD_TX_ SVDD
_CLK_B
SVSS SD_TX_ XVSS SD_RX_ SVDD 1588_TR1588_PUL LVDD _TXD0 _RXD2 _RXD0 _RX_DV _RX_CLK _TXD2 AE
B0 B1 B2 B3 IG_IN1 SE_OUT1
TSEC_ TSEC1
EC_ TSEC3 TSEC1 TSEC3 TSEC1
AF VSS MCK1_B MDQ03 MDQS0 MDM0 MDQ05 VSS SVDD XVDD SD_TX_ SVDD SD_RX_ SVDD SD_RX_ SVDD SD_TX_ XVDD SVSS 1588_TR
_TXD0 VSS _TX_ER _TXD2 VSS _GTX
_CRS
AF
MDIOIG_IN2 _CLK
0 1 2 3
TSEC_ TSEC_
XVSS 1588_AL EC_ 1588_AL TSEC_ TSEC1 TSEC3 TSEC3 EC_GTX TSEC3
AG VSS MCK1 MDQ02 MDQS0 MDQ00 MDQ04 VSS SVDD XVSS SD_TX_ SVSS SD_RX_ SVSS SD_RX_ SVSS SD_TX_ VSS AG
_B B0 1 B2 B3 ARM_OUT2 MDC ARM_OUT11588_CLK _RXD1 _RXD2 _RXD3 _CLK125 _TXD1
_IN

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

Figure 2. P1016 Top View Ballmap

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

4 Freescale Semiconductor
 Pin Assignments and Reset States

1 2 3 4 5 6 7 8 9 10 11 12 13 14

A NC1 NC2 LAD13 LGPL0 LA20 LCLK1 LCLK0 LAD15 LAD06 LAD02 CE_B3 LDP0 LAD07 LAD03

B MDIC0 NC11 LAD09 LA22 LWE0_B VSS LCS6_B LCS5_B VSS LAD00 LDP1 VSS LBCTL LGPL2

C MA10 MCS1_B MA13 VSS LWE1_B LCS1_B LGPL4 BVDD LCS7_B LAD05 BVDD LGPL5 LAD04 BVDD

D MCK2 MCK2_B MCS0_B MDIC1 LGPL3 LCS4_B VSS LGPL1 LAD10 VSS LAD12 THERM1 VSS LCS2_B

E MRAS_B VSS MA00 VSS MODT1 BVDD NC23 LAD11 LAD14 LALE CE_PB2 THERM0 NC22 NC117

F MA01 MA04 MWE_B MCAS_B NC12

G MA05 VSS MBA0 MODT0 NC13

H MAPAR_
MA08 MA02 MBA1 NC14
OUT

J MCK3_B MCK3 MA06 VSS MVREF BVDD BVDD BVDD BVDD BVDD BVDD

K MCK0_B MCK0 MA09 NC15 NC24 GVDD VDDC NC110 NC111 NC112 VDDC

MAPAR_
L MA07 MA03 MA12 NC16 GVDD NC113 VSS VSS VSS VSS
ERR_B

M MA11 VSS MBA2 MA14 MA15 GVDD NC114 VSS VSS VSS VSS

N MCKE1 MCKE0 GVDD MECC02 NC17 GVDD VDDC VSS VSS VSS VSS

P MDQS8 MDQS8 MECC06 VSS MECC07 GVDD VDDC VSS VSS VSS VSS
_B

DETAIL A

Figure 3. P1016 Detail A Ballmap

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 5
Pin Assignments and Reset States

15 16 17 18 19 20 21 22 23 24 25 26 27

USB_ A
LA18 LA27 LA25 LA26 LA31 LA19 CE_PB8 USB_D1 USB_D2 USB_D6 USB_D5 CLK VSS

CE_ USB_ SPI_ SPI_ B

USB_
VSS LA16 LA17 VSS LA23 PB13 VSS USB_D4 VSS PWR CS3_B CS2_B
NXT
FAULT

CE_ CE_ USB_ USB_ SPI_ SPI_ SPI_ C

LA21 LAD01 BVDD LA28 LA30 PB12 PB30 DIR STP MOSI CS0_B VSS MISO

CE_ CE_ SDHC_ SDHC_ SDHC_ D

LCS0_B VSS LCS3_B LA24 VSS VSS USB_D3 SPI_CLK CLK DAT0 DAT2
PA15 PC0

AVDD_ CE_ CE_ IIC1_ IIC1_ E

BVDD VSS LAD08 LA29 PB31 USB_D0 USB_D7 SPI_CS1 VSS
CORE0 PB29 SCL SDA
_B

SDHC_ SDHC_ IIC2_ IIC2_ UART_ F

CMD DAT1 SDA SCL CTS0_B

SDHC_ UART_ UART_ UART_ UART_ G

DAT3 SIN1 SIN0 CTS1_B SOUT1

UART_ UART_ UART_ UDE0

RTS0_B VSS H
SOUT0 RTS1_B _B

BVDD BVDD BVDD CVDD CVDD IRQ01 UDE1 RTC IRQ02 CE_PB10 J
_B

CVDD_ CVDD_ BVDD_

VDDC VDDC VDDC VDDC CVDD IRQ00 VSS K
VSEL0 VSEL1 VSEL1

BVDD_ IRQ05 MCP1_B MDVAL IRQ03

VSS VSS VSS VDDC CVDD
VSEL0
L

LVDD_ MSR MSR

VSS VSS VSS VDDC OVDD IRQ04 VSS VSEL M
CID4 CID3

VSS VSS VSS VDDC OVDD CE_PB7 IRQ_OUT MSR MSR CE_PB1 N
_B CID0 CID2

CE_ CE_ MSR

VSS VSS VSS VDDC OVDD CE_PB6 PB11 VSS P
PA31 CID1

DETAIL B

Figure 4. P1016 Detail B Ballmap

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

6 Freescale Semiconductor
 Pin Assignments and Reset States

R MECC03 MDM8 GVDD MECC01 MECC04 GVDD VDDC VSS VSS VSS VSS

T MECC00 VSS MECC05 MDQ27 NC18 GVDD VDDC VSS VSS VSS VSS

U MDQ26 MDM3 GVDD MDQ_25 MDQ30 GVDD VDDC VSS VSS VSS VSS

V MDQS3 MDQS3 MDQ29 VSS MDQ24 GVDD VDDC VDDC VDDC SVDD XVDD
_B

MDQ31 VSS MDQ28 MDQ17 NC21 AVDD_ SD_IMP SDAVDD SDAVSS

W GVDD NC19
DDR _CAL_RX

Y MDQ18 MDQS2 MDQS2 VSS MDQ19

_B

AA MDQ23 MDQ22 MDM2 MDQ16 NC3

AB MDQ21 VSS MDQ20 MDQ10 NC4

SD_PLL SD_PLL
AC MDQ14 MDQ11 MDQ15 GVDD NC9 VSS DDRCLK NC10 SVSS SVSS XVSS
_TPD
NC5
_TPA

SD_REF
AD MDQS1 MDQS1 MDQ13 MDQ12 MDQ07 MDQ01 VSS SVDD SD_RX_ XVDD SD_TX_ SVSS
_CLK
SVDD
_B 0 1

SD_REF
AE MDQ08 MDQ09 MDM1 VSS MDQ06 GVDD VSS SVSS SD_RX_ XVSS SD_TX_ SVDD
_CLK_B
SVSS
B0 B1

AF VSS MCK1_B MDQ03 MDQS0 MDM0 MDQ05 VSS SVDD XVDD SD_TX_ SVDD SD_RX_ SVDD SD_RX_
0 1 2

AG VSS MCK1 MDQ02 MDQS0 MDQ00 MDQ04 VSS SVDD XVSS SD_TX_ SVSS SD_RX_ SVSS SD_RX_
_B B0 B1 B2

1 2 3 4 5 6 7 8 9 10 11 12 13 14

DETAIL C

Figure 5. P1016 Detail C Ballmap

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

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Pin Assignments and Reset States

DMA1_
VSS VSS VSS VDDC OVDD CE_PB0 VSS CE_PB4 DACK0_ CE_PB5 R
B
CFG_
AVDD_ TRIG_ HRESET DMA1_
VSS VSS VSS VDDC
PLAT
VSS MEM_
OUT _REQ_B DDONE0 T
DEBUG _B

TMS TCK CLK_ VSS SYSCLK

VSS VSS VSS VDDC OVDD OUT U

CE_ DMA1_
SCAN_
SVDD VDDC VDDC VDDC LVDD TDI
PB18
ASLEEP DREQ0
MODE_B
V
_B

SD_IMP NC20 TDO VSS CKSTP_ CKSTP_ TRST

_CAL_TX
LVDD LVDD LVDD
OUT0_B IN0_B _B W
CFG_
DDR_ HRESET SRESET CKSTP_ CKSTP_ Y
DEBUG OUT1_B IN1_B
_B _B

TEST_ READY MCP0 TRIG

SEL_B _P1 _B
VSS
_IN AA
CFG_
TSEC1_ TSEC3_ TSEC3_
TXD1
VSS
RX_ER TX_CLK
IO_ AB
PORTS3
TSEC_ TSEC3 TSEC3 CFG_
NC6 NC7 NC8 TSEC1 TSEC1 TSEC3 TSEC1 DRAM_
XVSS 1588_CLK _RXD1
_TX_CLK _TXD3 _RXD0 _RXD3
LVDD _GTX AC
_OUT _CLK TYPE
TSEC_
SD_RX_ TSEC1 TSEC1 TSEC1 TSEC1 TSEC3
SD_TX_ XVDD
3
SVSS 1588_PUL VSS
_RX_ER _TX_EN
VSS
_COL _TXD0
VSS
_TX_EN
AD
2 SE_OUT2
TSEC_ TSEC_
SD_RX_ TSEC3 TSEC1 TSEC1 TSEC1 TSEC1 TSEC1
SD_TX_ XVSS
B3
SVDD 1588_TR 1588_PUL LVDD
_TXD0 _RXD2 _RXD0 _RX_DV _RX_CLK _TXD2 AE
B2 IG_IN1 SE_OUT1
TSEC_ TSEC1
SD_TX_ EC_ TSEC3 TSEC1 TSEC3 TSEC1
SVDD 3 XVDD SVSS 1588_TR
_TXD0 VSS _TX_ER _TXD2 VSS _GTX
_CRS
AF
MDIO
IG_IN2 _CLK
TSEC_ TSEC_
SD_TX_
SVSS XVSS 1588_AL EC_ 1588_AL TSEC_ TSEC1 TSEC3 TSEC3 EC_GTX TSEC3 VSS AG
B3
ARM_OUT2 MDC ARM_OUT11588_CLK _RXD1 _RXD2 _RXD3 _CLK125 _TXD1
_IN

15 16 17 18 19 20 21 22 23 24 25 26 27

DETAIL D

Figure 6. P1016 Detail D Ballmap

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

8 Freescale Semiconductor
 Pin Assignments and Reset States

1.2 Pinout Assignments

This table provides the pinout listing.
Table 1. P1016 Pinout Listing

Signal Package Pin Number Pin Type Power Supply Notes

DDR SDRAM Memory Interface

MDQ00 AG5 I/O GVDD

MDQ01 AD6 I/O GVDD

MDQ02 AG3 I/O GVDD

MDQ03 AF3 I/O GVDD

MDQ04 AG6 I/O GVDD

MDQ05 AF6 I/O GVDD

MDQ06 AE5 I/O GVDD

MDQ07 AD5 I/O GVDD

MDQ08 AE1 I/O GVDD

MDQ09 AE2 I/O GVDD

MDQ10 AB4 I/O GVDD

MDQ11 AC2 I/O GVDD

MDQ12 AD4 I/O GVDD

MDQ13 AD3 I/O GVDD

MDQ14 AC1 I/O GVDD

MDQ15 AC3 I/O GVDD

MDQ16 AA4 I/O GVDD

MDQ17 W4 I/O GVDD

MDQ18 Y1 I/O GVDD

MDQ19 Y5 I/O GVDD

MDQ20 AB3 I/O GVDD

MDQ21 AB1 I/O GVDD

MDQ22 AA2 I/O GVDD

MDQ23 AA1 I/O GVDD

MDQ24 V5 I/O GVDD

MDQ25 U4 I/O GVDD

MDQ26 U1 I/O GVDD

MDQ27 T4 I/O GVDD

MDQ28 W3 I/O GVDD

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 9
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

MDQ29 V3 I/O GVDD

MDQ30 U5 I/O GVDD

MDQ31 W1 I/O GVDD

MECC00 T1 I/O GVDD

MECC01 R4 I/O GVDD

MECC02 N4 I/O GVDD

MECC03 R1 I/O GVDD

MECC04 R5 I/O GVDD

MECC05 T3 I/O GVDD

MECC06 P3 I/O GVDD

MECC07 P5 I/O GVDD

MAPAR_ERR_B L4 I GVDD

MAPAR_OUT H1 O GVDD

MDM00 AF5 O GVDD

MDM01 AE3 O GVDD

MDM02 AA3 O GVDD

MDM03 U2 O GVDD

MDM08 R2 O GVDD

MDQS00 AF4 I/O GVDD

MDQS01 AD1 I/O GVDD

MDQS02 Y3 I/O GVDD

MDQS03 V2 I/O GVDD

MDQS08 P2 I/O GVDD

MDQS_B00 AG4 I/O GVDD

MDQS_B01 AD2 I/O GVDD

MDQS_B02 Y2 I/O GVDD

MDQS_B03 V1 I/O GVDD

MDQS_B08 P1 I/O GVDD

MBA00 G3 O GVDD

MBA01 H4 O GVDD

MBA02 M3 O GVDD

MA00 E3 O GVDD

MA01 F1 O GVDD

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

10 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

MA02 H3 O GVDD

MA03 L2 O GVDD

MA04 F2 O GVDD

MA05 G1 O GVDD

MA06 J3 O GVDD

MA07 L1 O GVDD

MA08 H2 O GVDD

MA09 K3 O GVDD

MA10 C1 O GVDD

MA11 M1 O GVDD

MA12 L3 O GVDD

MA13 C3 O GVDD

MA14 M4 O GVDD

MA15 M5 O GVDD

MWE_B F3 O GVDD

MRAS_B E1 O GVDD

MCAS_B F4 O GVDD

MCS_B00 D3 O GVDD

MCS_B01 C2 O GVDD

MCKE00 N2 O GVDD 8

MCKE01 N1 O GVDD 8

MCK00 K2 O GVDD

MCK01 AG2 O GVDD

MCK02 D1 O GVDD

MCK03 J2 O GVDD

MCK_B00 K1 O GVDD

MCK_B01 AF2 O GVDD

MCK_B02 D2 O GVDD

MCK_B03 J1 O GVDD

MODT00 G4 O GVDD

MODT01 E5 O GVDD

MVREF J5 I/O GVDD

MDIC00 B1 I/O GVDD 14

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 11
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

MDIC01 D4 I/O GVDD 14

SerDes

SD_TX_3 AF16 O XVDD_SRDS

SD_TX_2 AD15 O XVDD_SRDS

SD_TX_1 AD11 O XVDD_SRDS

SD_TX_0 AF10 O XVDD_SRDS

SD_TX_B3 AG16 O XVDD_SRDS

SD_TX_B2 AE15 O XVDD_SRDS

SD_TX_B1 AE11 O XVDD_SRDS

SD_TX_B0 AG10 O XVDD_SRDS

SD_RX_3 AD17 I SVDD_SRDS

SD_RX_2 AF14 I SVDD_SRDS

SD_RX_1 AF12 I SVDD_SRDS

SD_RX_0 AD9 I SVDD_SRDS

SD_RX_B3 AE17 I SVDD_SRDS

SD_RX_B2 AG14 I SVDD_SRDS

SD_RX_B1 AG12 I SVDD_SRDS

SD_RX_B0 AE9 I SVDD_SRDS

SD_REF_CLK AD13 I SVDD_SRDS

SD_REF_CLK_B AE13 I SVDD_SRDS

SD_PLL_TPD AC12 O XVDD_SRDS 10

SD_IMP_CAL_RX W12 I XVDD_SRDS 23

SD_IMP_CAL_TX W15 I XVDD_SRDS 23

SD_PLL_TPA AC14 O XVDD_SRDS 10

Enhanced Local Bus Controller Interface

LAD00 B10 I/O BVDD 4, 19

LAD01 C16 I/O BVDD 4, 19

LAD02 A10 I/O BVDD 4, 19

LAD03 A14 I/O BVDD 4, 19

LAD04 C13 I/O BVDD 4, 19

LAD05 C10 I/O BVDD 4, 19

LAD06 A9 I/O BVDD 4, 19

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

12 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

LAD07 A13 I/O BVDD 4, 19

LAD08 / CE_PA0 E18 I/O BVDD 4, 19

LAD09 B3 I/O BVDD 4, 19

LAD10 D9 I/O BVDD 4, 19

LAD11 E8 I/O BVDD 4, 19

LAD12 D11 I/O BVDD 4, 19

LAD13 A3 I/O BVDD 4, 19

LAD14 E9 I/O BVDD 4, 19

LAD15 A8 I/O BVDD 4, 19

LDP00 / CE_PA11 A12 I/O BVDD 7

LDP01 / CE_PA12 B11 I/O BVDD 7

LA16 / CE_PA4 B16 I/O BVDD 20

LA17 / CE_PA5 B17 I/O BVDD 13

LA18 / CE_PA6 A15 I/O BVDD 4

LA19 / CE_PA7 A20 I/O BVDD 4

LA20 / CE_PA8 A5 I/O BVDD 4

LA21 / CE_PA9 C15 I/O BVDD 4, 24

LA22 / CE_PA10 B4 I/O BVDD 4, 24

LA23 / CE_PA17 B19 I/O BVDD 4

LA24 / CE_PA18 D18 I/O BVDD 4

LA25 / CE_PA19 A17 I/O BVDD 4

LA26 / CE_PA20 A18 I/O BVDD 4

LA27 / CE_PA21 A16 I/O BVDD 20

LA28 / CE_PA13 C18 I/O BVDD 13

LA29 / CE_PA25 E19 I/O BVDD

LA30 / CE_PA26 C19 I/O BVDD

LA31 / CE_PA30 A19 I/O BVDD

LCS_B00 D15 O BVDD 7

LCS_B01 C6 O BVDD 7

LCS_B02 D14 O BVDD 7

LCS_B03 D17 O BVDD 7

LCS_B04 / CE_PA22 D6 I/O BVDD 7

LCS_B05 / CE_PA23 B8 I/O BVDD 7

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 13
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

LCS_B06 / CE_PA24 B7 O BVDD 7

LCS_B07 / CE_PA27 C9 O BVDD 7

LWE_B00 B5 O BVDD 6

LWE_B01 / CE_PB9 C5 I/O BVDD

LBCTL / CE_PB20 B13 I/O BVDD 5

LALE E10 O BVDD 5

LGPL0 / CE_PA1 A4 I/O BVDD

LGPL1 / CE_PA2 D8 I/O BVDD

LGPL2 B14 O BVDD 5

LGPL3 / CE_PA3 D5 I/O BVDD 4

LGPL4 C7 I/O BVDD 24

LGPL5 / CE_PA14 C12 I/O BVDD 4

LCLK00 / CE_PA28 A7 I/O BVDD

LCLK01 / CE_PA16 A6 I/O BVDD

CE_PB2 E11 I/O BVDD

CE_PB3 A11 I/O BVDD

DMA

DMA1_DREQ_B00 V26 I OVDD

DMA1_DACK_B00 R26 O OVDD 25

DMA1_DDONE_B00 T27 O OVDD

Programmable Interrupt Controller

UDE0_B H27 I OVDD 2

NC105 J24 NC

MCP0_B AA25 I OVDD 2

NC106 L25 NC

IRQ00 K23 I OVDD

IRQ01 J23 I OVDD

IRQ02 J26 I OVDD

IRQ03 L27 I OVDD

IRQ04 M23 I OVDD

IRQ05 L24 I OVDD

IRQ_OUT_B N24 O OVDD 2, 3

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

14 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

Voltage select

LVDD_VSEL M25 I OVDD 18

BVDD_VSEL0 L23 I OVDD 18

BVDD_VSEL1 K27 I OVDD 18

CVDD_VSEL0 K24 I OVDD 18

CVDD_VSEL1 K25 I OVDD 18

1588

TSEC_1588_CLK_IN AG21 I LVDD

TSEC_1588_TRIG_IN1 AE19 I LVDD

TSEC_1588_TRIG_IN2 AF20 I LVDD

TSEC_1588_ALARM_OUT1 AG20 O LVDD 4, 6

TSEC_1588_ALARM_OUT2 AG18 O LVDD 4, 6

TSEC_1588_CLK_OUT AC19 O LVDD 4, 6

TSEC_1588_PULSE_OUT1 AE20 O LVDD 4, 6

TSEC_1588_PULSE_OUT2 AD19 O LVDD 4, 6

Ethernet Management Interface

EC_MDC AG19 O LVDD 4, 6

EC_MDIO AF19 I/O LVDD

Gigabit Ethernet Reference Clock

EC_GTX_CLK125 AG25 I LVDD 16

Enhanced Three Speed Ethernet Controller 1

TSEC1_TXD03 AC22 O LVDD 4, 6

TSEC1_TXD02 AE27 O LVDD 4, 6

TSEC1_TXD01 AB23 O LVDD 4, 6

TSEC1_TXD00 AD25 O LVDD 4, 6

TSEC1_TX_EN AD22 O LVDD 4, 6

TSEC1_TX_ER AF23 O LVDD 4, 6

TSEC1_TX_CLK / AC21 I LVDD 4, 6

TSEC1_GTX_CLK125

TSEC1_GTX_CLK AF26 O LVDD 4, 6

TSEC1_CRS / TSEC3_RX_DV AF27 I/O LVDD

TSEC1_COL / TSEC3_RX_CLK AD24 I LVDD

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 15
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

TSEC1_RXD03 AC24 I LVDD

TSEC1_RXD02 AE23 I LVDD

TSEC1_RXD01 AG22 I LVDD

TSEC1_RXD00 AE24 I LVDD

TSEC1_RX_DV AE25 I LVDD

TSEC1_RX_ER AD21 I LVDD

TSEC1_RX_CLK AE26 I LVDD

Enhanced Three Speed Ethernet Controller 3

TSEC3_TXD03 AE22 O LVDD 4, 6

TSEC3_TXD02 AF24 O LVDD 4, 6

TSEC3_TXD01 AG26 O LVDD 4, 6

TSEC3_TXD00 AF21 O LVDD 4, 6

TSEC3_RXD03 AG24 I LVDD

TSEC3_RXD02 AG23 I LVDD

TSEC3_RXD01 AC20 I LVDD

TSEC3_RXD00 AC23 I LVDD

TSEC3_TX_EN AD27 O LVDD 22

TSEC3_GTX_CLK AC26 O LVDD

TSEC3_RX_ER AB25 I LVDD

TSEC3_TX_CLK AB26 I LVDD

CFG_DRAM_TYPE AC27 I LVDD

CFG_IO_PORTS3 AB27 I LVDD

DUART

UART_SOUT00 H25 O OVDD 17

UART_SOUT01 / CE_PB17 G27 I/O OVDD

UART_SIN00 G25 I OVDD

UART_SIN01 / CE_PB16 G24 I/O OVDD

UART_CTS_B00 F27 I OVDD

UART_CTS_B01 / CE_PB14 G26 I/O OVDD

UART_RTS_B00 H23 O OVDD 4

UART_RTS_B01 / CE_PB15 H26 O OVDD 4

I2C

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

16 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

IIC1_SDA E27 I/O OVDD 3, 12

IIC1_SCL E26 I/O OVDD 3, 12

IIC2_SDA / CE_PB21 F25 I/O OVDD , 12

IIC2_SCL / CE_PB22 F26 I/O OVDD , 12

eSDHC

SDHC_DATA00 D26 I/O CVDD

SDHC_DATA01 F24 I/O CVDD

SDHC_DATA02 D27 I/O CVDD

SDHC_DATA03 G23 I/O CVDD

SDHC_CMD F23 I/O CVDD

SDHC_CLK D25 O CVDD

SPI

SPI_MISO C27 I CVDD

SPI_MOSI C24 I/O CVDD

SPI_CS0_B / SDHC_DATA04 C25 I/O CVDD

SPI_CS1_B / SDHC_DATA05 E24 I/O CVDD

SPI_CS2_B / SDHC_DATA06 B27 I/O CVDD

SPI_CS3_B / SDHC_DATA07 B26 I/O CVDD

SPI_CLK D24 O CVDD

USB

USB_NXT B23 I CVDD

USB_DIR C22 I CVDD

USB_STP C23 O CVDD 25

USB_PWRFAULT B25 I CVDD

USB_CLK A26 I CVDD

USB_D07 E23 I/O CVDD

USB_D06 A24 I/O CVDD

USB_D05 A25 I/O CVDD

USB_D04 B22 I/O CVDD

USB_D03 D23 I/O CVDD

USB_D02 A23 I/O CVDD

USB_D01 A22 I/O CVDD

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 17
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

USB_D00 E22 I/O CVDD

QE Ports

CE_PA15/USB_PCTL1 D20 I/O OVDD

CFG_DDR_DEBUG / CE_PA29 Y23 I/O OVDD

CE_PA31 P25 I/O OVDD

CE_PB0 R23 I/O OVDD

CE_PB1 N27 I/O OVDD

CE_PB4 R25 I/O OVDD

CE_PB5 R27 I/O OVDD

CE_PB6 P23 I/O OVDD

CE_PB7 N23 I/O OVDD

CE_PB8/USB_PCTL0 A21 I/O OVDD

IRQ06 /CE_PB10 J27 I/O OVDD

CE_PB11 P24 I/O OVDD

CE_PB12/SDHC_CD C20 I/O OVDD

CE_PB13/SDHC_WP B20 I/O OVDD

CE_PB18 V24 I/O OVDD

CFG_MEM_DEBUG / CE_PB19 T24 I/O OVDD

CE_PB29 E20 I/O OVDD

CE_PB30 C21 I/O OVDD

CE_PB31 E21 I/O OVDD

CE_PC0 D21 I/O OVDD

System Control

HRESET_B Y24 I OVDD

HRESET_REQ_B T26 O OVDD 13

SRESET_B Y25 I OVDD

CKSTP_IN0_B W26 I OVDD 2

CKSTP_IN1_B Y27 I OVDD 2

CKSTP_OUT0_B W25 O OVDD 2, 4

CKSTP_OUT1_B Y26 O OVDD 2, 4

Debug

TRIG_IN AA27 I OVDD

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

18 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

TRIG_OUT T25 O OVDD 6

READY_P1 AA24 O OVDD 4

MSRCID00 / LB_MSRCID00 / N25 I/O OVDD 4

PLL_PER_OUT00 / CE_PB23

MSRCID01 / LB_MSRCID01 / P27 I/O OVDD 13

PLL_PER_OUT01 / CE_PB24

MSRCID02 / LB_MSRCID02 / N26 I/O OVDD 13

PLL_PER_OUT02 / CE_PB25

MSRCID03 / LB_MSRCID03 / M27 I/O OVDD 13

PLL_PER_OUT03 / CE_PB26

MSRCID04 / LB_MSRCID04 / M26 I/O OVDD 17

PLL_UP_DN / CE_PB27

MDVAL/ LB_MDVAL / L26 I/O OVDD 13

PLL_PER_VALID / CE_PB28

Clocks

CLK_OUT U25 O OVDD 8

RTC J25 I OVDD

DDRCLK AC7 I OVDD 15

SYSCLK U27 I OVDD

DFT

SCAN_MODE_B V27 I OVDD 25

TEST_SEL_B AA23 I OVDD 25

JTAG

TCK U24 I OVDD

TDI V23 I OVDD 9

TDO W23 O OVDD 8

TMS U23 I OVDD 9

TRST_B W27 I OVDD 9

Power Management

ASLEEP V25 O OVDD 13

No Connections

NC1 A1 NC

NC2 A2 NC

NC3 AA5 NC

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 19
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

NC4 AB5 NC

NC5 AC13 NC

NC6 AC16 NC

NC7 AC17 NC

NC8 AC18 NC

NC9 AC5 NC

NC10 AC8 NC

NC11 B2 NC

NC12 F5 NC

NC13 G5 NC

NC14 H5 NC

NC15 K4 NC

NC16 L5 NC

NC17 N5 NC

NC18 T5 NC

NC19 W10 NC

NC20 W16 NC

NC21 W5 NC

NC22 E13 NC

NC23 E7 NC

NC24 K5 NC

THERM1 D12 Internal Diode 26

Anode

THERM0 E12 Internal Diode 26

Cathode

Power and Ground Signals

AGND_SRDS W14

AVDD_CORE0 E16 11, 21

NC117 E14 NC

AVDD_DDR W11 11

AVDD_PLAT T19 11

AVDD_SRDS W13 11

BVDD C11

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

20 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

BVDD C14

BVDD C17

BVDD C8

BVDD J9

BVDD J10

BVDD J11

BVDD J12

BVDD J13

BVDD J14

BVDD J15

BVDD J16

BVDD J17

BVDD E6

BVDD E15

CVDD J18

CVDD J19

CVDD L19

CVDD K19

GVDD K9

GVDD L9

GVDD M9

GVDD N9

GVDD P9

GVDD R9

GVDD T9

GVDD U9

GVDD V9

GVDD W9

GVDD AE6

GVDD AC4

GVDD N3

GVDD U3

GVDD R3

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 21
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

LVDD W17

LVDD W18

LVDD W19

LVDD AE21

LVDD V19

LVDD AC25

SVDD_SRDS V13

SVDD_SRDS V15

SVDD_SRDS AD8

SVDD_SRDS AD14

SVDD_SRDS AE12

SVDD_SRDS AE18

SVDD_SRDS AG8

SVDD_SRDS AF8

SVDD_SRDS AF11

SVDD_SRDS AF13

SVDD_SRDS AF15

SGND_SRDS AF18

SGND_SRDS AG11

SGND_SRDS AE14

SGND_SRDS AD18

SGND_SRDS AC9

SGND_SRDS AD12

SGND_SRDS AC10

SGND_SRDS AG15

SGND_SRDS AG13

SGND_SRDS AE8

XVDD_SRDS V14

XVDD_SRDS AD10

XVDD_SRDS AD16

XVDD_SRDS AF9

XVDD_SRDS AF17

XGND_SRDS AC11

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

22 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

XGND_SRDS AC15

XGND_SRDS AE10

XGND_SRDS AE16

XGND_SRDS AG9

XGND_SRDS AG17

OVDD M19

OVDD N19

OVDD P19

OVDD R19

OVDD U19

NC110 K11 NC

NC111 K12 NC

NC112 K13 NC

NC113 L10 NC

NC114 M10 NC

VDDC K10

VDDC K14

VDDC K15

VDDC K16

VDDC K17

VDDC K18

VDDC N10

VDDC P10

VDDC R10

VDDC T10

VDDC U10

VDDC V10

VDDC V11

VDDC V12

VDDC V16

VDDC V17

VDDC V18

VDDC L18

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 23
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

VDDC M18

VDDC N18

VDDC P18

VDDC R18

VDDC T18

VDDC U18

GND E17

GND L11

GND M11

GND N11

GND P11

GND R11

GND T11

GND U11

GND L12

GND M12

GND N12

GND P12

GND R12

GND T12

GND U12

GND L13

GND M13

GND N13

GND P13

GND R13

GND T13

GND U13

GND L14

GND M14

GND N14

GND P14

GND R14

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

24 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

GND T14

GND U14

GND L15

GND M15

GND N15

GND P15

GND R15

GND T15

GND U15

GND L16

GND M16

GND N16

GND P16

GND R16

GND T16

GND U16

GND L17

GND M17

GND N17

GND P17

GND R17

GND T17

GND U17

GND AF1

GND AG1

GND G2

GND M2

GND T2

GND W2

GND AB2

GND C4

GND E4

GND J4

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 25
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

GND P4

GND V4

GND Y4

GND AE4

GND B6

GND AC6

GND D7

GND AD7

GND B9

GND D10

GND B12

GND D13

GND B15

GND D16

GND B18

GND D19

GND B21

GND D22

GND AD20

GND AF22

GND T23

GND AD23

GND B24

GND H24

GND M24

GND R24

GND W24

GND AB24

GND E25

GND AF25

GND C26

GND K26

GND P26

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

26 Freescale Semiconductor
 Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

GND U26

GND AA26

GND AD26

GND A27

GND AG27

GND AE7

GND AF7

GND AG7

GND E2

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 27
Pin Assignments and Reset States

Table 1. P1016 Pinout Listing (continued)

Signal Package Pin Number Pin Type Power Supply Notes

Notes:
1. All multiplexed signals are listed only once and do not re-occur.
2. Recommend that a weak pull-up resistor (210 K) be placed on this pin to OVDD.
3. This pin is an open drain signal.
4. This pin is a reset configuration pin. It has a weak internal pull-up P-FET which is enabled only when the processor is in the
reset state. This pull-up is designed such that it can be overpowered by an external 4.7-k pull-down resistor. However, if
the signal is intended to be high after reset, and if there is any device on the net which might pull down the value of the net
at reset, a pullup or active driver is needed.
5. The value of LALE, LGPL2, and LBCTL at reset set the e500 core clock to CCB Clock PLL ratio. These pins require 4.7-k
pull-up or pull-down resistors.
6. Functionally, this pin is an output, but structurally it is an I/O because it either samples configuration input during reset or
because it has other manufacturing test functions. This pin will therefore be described as an I/O for boundary scan.
7. If this pin is configured for local bus controller usage, recommend that a weak pull-up resistor (210 K) be placed on this
pin to BVDD in order to ensure no random chip select assertion due to possible noise and etc.
8. This output is actively driven during reset rather than being three-stated during reset.
9. These JTAG pins have weak internal pull-up P-FETs that are always enabled.
10.Do not connect.
11. Independent supplies derived from board VDD.
12.Recommend that a pull-up resistor (~1 k) be placed on this pin to OVDD.
13.These pins must NOT be pulled down by a resistor or the component they are connected to during power-on reset: LA28,
LA17, HRESET_REQ, MSRCID[1:3], MDVAL, ASLEEP, DMA1_DDONE_B00, SCAN_MODE_B, TRIG_OUT.
14. The calibration resistor value for DDR3 should be 20- (full-strength mode) or 40- (half-strength mode).
15.DDRCLK input is only required when the DDR controller is running in asynchronous mode. When the DDR controller is
configured to run in synchronous mode via POR setting cfg_ddr_pll[0:2]=111, the DDRCLK input is not required. It is
recommended to tie it off to GND when DDR controller is running in synchronous mode. See the Clock Signals section
and the DDR Complex Clock PLL Ratio table in the DDR PLL Ratio section of the P1025QorIQ Integrated Host
Processor Family Reference Manual for a more detailed description regarding DDR controller operation in asynchronous
and synchronous modes.
16.EC_GTX_CLK125 is a 125-MHz input clock shared among all eTSEC ports in RGMII mode. If none of the eTSEC ports is
operating in these mode, the EC_GTX_CLK125 input can be tied off to GND.

17.These POR configuration inputs may be used in the future to control functionality. It is advised that boards are built with the
ability to pull down these pins. LA[20:22], UART_SOUT[0], and MSRCID[4] are reserved for future reset configuration.
18.Incorrect settings can lead to irreversible device damage.
19.The value of LAD[0:15] during reset sets the upper 16 bits of the GPPORCR.
20.The value of LA27 during reset is used to determine CPU boot configuration. See the CPU Boot POR Configuration
section in the applicable device reference manual.
21.It must be the same as VDD_Core.
22.When eTSEC1 and eTSEC3 are used as parallel interfaces, pins TSEC1_TX_EN and TSEC3_TX_EN requires an external
4.7-k_ pull-down resistor to prevent PHY from seeing a valid Transmit Enable before it is actively driven. However, because
of the pull-down resistor on TSEC3_TX_EN cause the eSDHC card-detect (cfg_sdhc_cd_pol_sel) to be inverted, the
inversion should be overridden from the SDHCDCR [CD_INV] debug control register.
23.SD_IMP_CAL_RX should be grounded through an 200- precision 1% resistor and SD_IMP_CAL_TX is grounded through
an 100- precision 1% resistor.
24.For systems that boot from Local Bus (GPCM)-controlled NOR flash or (FCM)-controlled NAND flash, a pull-up on LGPL4
is required.
25.Refer to AN4259 for the correct settings.
26.These pins may be connected to a temperature diode monitoring device such as the On Semiconductor, NCT1008. If a
temperature diode monitoring device is not connected, these pins may be connected to test point or left as a no connect.

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

28 Freescale Semiconductor
 Electrical Characteristics

2 Electrical Characteristics
This section provides the AC and DC electrical specifications. The processor is currently targeted to these specifications. Some
of these specifications are independent of the I/O cell, but are included for a more complete reference. These are not purely I/O
buffer design specifications.

2.1 Overall DC Electrical Characteristics

This section covers the ratings, conditions, and other characteristics.

2.1.1 Absolute Maximum Ratings

This table provides the absolute maximum ratings.
Table 2. Absolute Maximum Ratings1

Characteristic Symbol Max Value Unit Note

Core 0 and platform supply voltage VDDC 0.3 to 1.05 V

PLL supply voltage AVDD_CORE0 0.3 to 1.05 V 8

AVDD_DDR
AVDD_PLAT
AV DD_SRDS

Core power supply for SerDes transceivers SVDD_SRDS 0.3 to 1.05 V

Pad power supply for SerDes transceivers XVDD_SRDS 0.3 to 1.05 V

DDR3 DRAM I/O voltage GVDD 0.3 to 1.98 V

Three-speed Ethernet I/O, MII management voltage (eTSEC) LVDD 0.3 to 3.63 V 1, 4
0.3 to 2.75

DUART, system control and power management, I2C, and JTAG I/O OVDD 0.3 to 3.63 V
voltage

USB, eSPI, eSDHC CVDD 0.3 to 3.63 V

0.3 to 2.75
0.3 to 1.98

Enhanced local bus I/O voltage BVDD 0.3 to 3.63 V

Input voltage DDR3 DRAM signals MVIN 0.3 to (GVDD + 0.3) V 2, 7

DDR3 DRAM reference MVREF 0.3 to (GVDD/2 + V

0.3)

Three-speed Ethernet signals LVIN 0.3 to (LVDD + 0.3) V 3, 7

Enhanced local bus signals BVIN 0.3 to (BVDD + 0.3) 5

DUART, SYSCLK, system control and power OVIN 0.3 to (OVDD + 0.3) V 6, 7
management, I2C, clocking, I/O voltage select,
and JTAG I/O voltage

USB, eSPI, eSDHC CVIN 0.3 to (CVDD + 0.3) V 4

SerDes signals XVIN 0.3 to (XVDD + 0.3) V

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Freescale Semiconductor 29
Electrical Characteristics

Table 2. Absolute Maximum Ratings1 (continued)

Characteristic Symbol Max Value Unit Note

Storage temperature range TSTG 55 to 150 C

Notes:
1. Functional operating conditions are given in Table 3. Absolute maximum ratings are stress ratings only, and functional
operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause permanent
damage to the device.
2. Caution: MVIN must not exceed GVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
3. Caution: LVIN must not exceed LVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
4. Caution: CVIN must not exceed CVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
5. Caution: BVIN must not exceed BVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
6. Caution: OVIN must not exceed OVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
7. (C,X,B,G,L,O)VIN and MVREF may overshoot/undershoot to a voltage and for a maximum duration as shown in Figure 7.
8. AVDD is measured at the input to the filter (as shown in AN4259) and not at the pin of the device.

2.1.2 Recommended Operating Conditions

This table provides the recommended operating conditions for this device. Note that the values in this table are the
recommended and tested operating conditions. Proper device operation outside these conditions is not guaranteed.
Table 3. Recommended Operating Conditions

Characteristic Symbol Recommended Value Unit Notes

Core 0 and platform supply voltage VDDC 1.0 50 mV V 1

PLL supply voltage AVDD_CORE0 1.0 50 mV V
AVDD_DDR
AVDD_PLAT
AVDD_SRDS
Core power supply for SerDes transceivers SVDD_SRDS 1.0 50 mV V
Pad power supply for SerDes transceivers and PCI Express XVDD_SRDS 1.0 50 mV V
DDR3 DRAM I/O voltage GVDD 1.5 V 75 mV
Three-speed Ethernet I/O voltage (eTSEC) LVDD 3.3 V 165 mV V
2.5 V 125 mV
DUART, system control and power management, I2C, QUICC OVDD 3.3 V 165 mV V
Engine block, and JTAG I/O voltage
Enhanced local bus I/O and QUICC Engine block voltage BVDD 3.3 V 165 mV V

USB, eSPI, eSDHC CVDD 3.3 V 165 mV V

2.5 V 125 mV
1.8 V 90 mV

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30 Freescale Semiconductor
 Electrical Characteristics

Table 3. Recommended Operating Conditions (continued)

Characteristic Symbol Recommended Value Unit Notes

Input voltage DDR3 DRAM signals MVIN GND to GVDD V

DDR3 DRAM reference MVREF GND to GVDD/2 V
Three-speed Ethernet signals LVIN GND to LVDD V
Enhanced local bus signals BVIN GND to BVDD V
DUART, SYSCLK, system control and power OVIN GND to OVDD V
management, I2C, and JTAG signals
USB, eSPI, eSDHC CVIN GND to CVDD V
Junction temperature range TA/TJ 0 to 125 Commercial C 3
40 to 125 Industrial
Notes:
1. Caution: Until VDD reaches its recommended operating voltage, VDD may exceed L/C/B/G/OVDD by up to 0.7 V. If 0.7 V
is exceeded, extra current will be drawn by the device.
2. Caution: Until VDD reaches its recommended operating voltage, if L/C/B/G/OVDD exceeds VDD, extra current may be
drawn by the device.
3. Min temp is specified with TA; Max temp is specified with TJ.

This figure shows the undershoot and overshoot voltages at the interfaces of the device.

B/C/G/L/OVDD + 20%
B/C/G/L/OVDD + 5%
VIH B/C/G/L/OV DD

GND
GND 0.3 V
VIL
GND 0.7 V
Not to Exceed 10%
of tCLOCK1
Note:
1. tCLOCK refers to the clock period associated with the respective interface:
For I2C and JTAG, tCLOCK references SYSCLK.
For DDR, tCLOCK references MCK.
For eTSEC, tCLOCK references EC_GTX_CLK125.
For eLBC, tCLOCK references LCLK.

Figure 7. Overshoot/Undershoot Voltage for BVDD/CVDD/GVDD/LVDD/OVDD

The core voltage must always be provided at nominal 1.0 V (see Table 3 for actual recommended core voltage). Voltage to the
processor interface I/Os are provided through separate sets of supply pins and must be provided at the voltages shown in Table 3.
The input voltage threshold scales with respect to the associated I/O supply voltage. OVDD and LVDD based receivers are simple
CMOS I/O circuits and satisfy appropriate LVCMOS type specifications. The SDRAM interface uses a differential receiver

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 31
Electrical Characteristics

referenced the externally supplied MVREF signal (nominally set to GVDD/2). The DDR DQS receivers cannot be operated in
single-ended fashion. The complement signal must be properly driven and cannot be grounded.

2.1.3 Output Driver Characteristics

This table provides information on the characteristics of the output driver strengths. The values are preliminary estimates.
Table 4. Output Drive Capability

Driver Type Output Impedance () Supply Voltage Notes

Enhanced local bus interface 45 BVDD = 3.3 V

DDR 3 signal (programmable) 20 (full-strength mode) GVDD = 1.5 V 1

40 (half-strength mode)
TSEC signals 45 LVDD = 2.5/3.3 V
DUART, system control, JTAG 45 OVDD = 3.3 V
I2C 45 OVDD = 3.3 V
USB, SPI, eSDHC 45 CVDD = 3.3 V
CVDD = 2.5 V
CVDD = 1.8 V
Note:
1. The drive strength of the DDR3 interface in half-strength mode is at Tj = 105C and at GVDD (min)

2.2 Power Sequencing

The processor requires that its power rails be applied in a specific sequence in order to ensure proper device operation. These
requirements are as follows for power up:
1. VDD, VDDC, AVDD, BV DD, LVDD, CVDD, OVDD, SVDD_SRDS and, XVDD_SRDS
2. GVDD
All supplies must be at their stable values within 50 ms.
Items on the same line have no ordering requirement with respect to one another. Items on separate lines must be ordered
sequentially such that voltage rails on a previous step must reach 90% of their value before the voltage rails on the current step
reach 10% of theirs.
To guarantee MCKE low during power-up, the above sequencing for GV DD is required. If there is no concern about any of the
DDR signals being in an indeterminate state during power-up, the sequencing for GVDD is not required.

NOTE
From a system standpoint, if any of the I/O power supplies ramp prior to the V DD core
supply, the I/Os associated with that I/O supply may drive a logic one or zero during
power-up, and extra current may be drawn by the device.

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

32 Freescale Semiconductor
 Electrical Characteristics

2.3 Power Down Requirements

The power-down cycle must complete such that power supply values are below 0.4 V before a new power-up cycle can be
started.

2.4 RESET Initialization

This section describes the AC electrical specifications for the RESET initialization timing requirements. This table provides the
RESET initialization AC timing specifications for the DDR SDRAM component(s).
Table 5. RESET Initialization Timing Specifications

Parameter/Condition Min Max Unit Note

Required assertion time of HRESET 25 s 1, 2

Minimum assertion time of TRESET simultaneous to HRESET assertion 25 ns 3

Maximum rise/fall time of HRESET 1 SYSCLK

Minimum assertion time for SRESET 3 SYSCLKs 4

Input setup time for POR configs (other than PLL config) with respect to 4 SYSCLKs 4
negation of HRESET

Input hold time for all POR configs (including PLL config) with respect to 2 SYSCLKs 4
negation of HRESET

Maximum valid-to-high impedance time for actively driven POR configs 5 SYSCLKs 4
with respect to negation of HRESET

Notes:
1. There may be some extra current leakage when driving signals high during this time.
2. Reset assertion timing requirements for DDR3 DRAMs may differ.
3. TRST is an asynchronous level sensitive signal. For guidance on how this requirement can be met, refer to the JTAG signal
termination guidelines in AN4259.
4. SYSCLK is the primary clock input for the processor.

This table provides the PLL lock times.

Table 6. PLL Lock Times

Parameter/Condition Min Max Unit Notes

PLL lock times 100 s

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Freescale Semiconductor 33
Electrical Characteristics

2.5 Power-on Ramp Rate

This section describes the AC electrical specifications for the power-on ramp rate requirements. Controlling the maximum
power-on ramp rate is required to avoid falsely triggering the ESD circuitry. This table provides the power supply ramp rate
specifications.
Table 7. Power Supply Ramp Rate

Parameter Min Max Unit Notes

Required ramp rate for all voltage supplies (including OVDD/CVDD/ 36000 V/s 1, 2
GVDD/BVDD/SVDD/LVDD, All VDD supplies, MVREF and all AVDD
supplies.)

Note:
1. Ramp rate is specified as a linear ramp from 10 to 90%. If non-linear (for example. exponential), the maximum rate of
change from 200 to 500 mV is the most critical as this range might falsely trigger the ESD circuitry.
2. Over full recommended operating temperature range (see Table 3).

2.6 Power Characteristics

The core power dissipation for the core complex bus (CCB) versus the core frequency for this family of QorIQ devices is shown
in this table.
Table 8. Core Power Dissipation

Platform
Core Frequency Junction
Frequency VDD (V) Power Mode Power (W) Notes
(MHz) Temperature (C)
(MHz)

400 266 1 Typical 65 1.38 1, 2, 3

Thermal 105 2.21 1, 4, 5

125 2.43 1, 4, 5

Maximum 105 2.24 1, 5, 6, 7

125 2.47 1, 5, 6, 7

533 266 1 Typical 65 1.42 1, 2, 3

Thermal 105 2.25 1, 4, 5

125 2.47 1, 4, 5

Maximum 105 2.36 1, 5, 6, 7

125 2.5 1, 5, 6, 7

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34 Freescale Semiconductor
 Electrical Characteristics

Table 8. Core Power Dissipation (continued)

Platform
Core Frequency Junction
Frequency VDD (V) Power Mode Power (W) Notes
(MHz) Temperature (C)
(MHz)

667 333 1 Typical 65 1.53 1, 2, 3

Thermal 105 2.36 1, 4, 5

125 2.58 1, 4, 5

Maximum 105 2.4 1, 5, 6, 7

125 2.63 1, 5, 6, 7
Note:
1. Combined power of VDD, VDDC, and AVDD_n with DDR controller/s and all SerDes banks active. Does not include I/O
power.
2. Typical power assumes Dhrystone running with activity factor of 80% (on all cores) and executing DMA on the platform with
90% activity factor.
3. Typical power based on nominal processed device.
4. Thermal power assumes Dhrystone running with activity factor of 80% (on all cores) and executing DMA on the platform at
90% activity factor.
5. Thermal and maximum power are based on worst case processed device.
6. Maximum power assumes Dhrystone running with activity factor at 100% (on all cores) and executing DMA on the platform
at 100% activity factor.
7. Maximum power provided for power supply design sizing.

2.6.1 I/O DC Power Supply Recommendation

This table provides estimated I/O power numbers for each block: DDR, PCIe, eLBC, eTSEC, SGMII, eSDHC, USB, eSPI,
DUART, I2C, and GPIO.
Table 9. I/O Power Supply Estimated Values

Interface Parameter Symbol Typical Unit Notes

DDR3 75% utilization 600 MHz data rate GVDD (1.5 V) 0.76 W 1, 2
667 MHz data rate GVDD (1.5 V) 0.82 W 1, 2
DDR3 40% utilization 600 MHz data rate GVDD (1.5 V) 0.57 W 1, 2
667 MHz data rate GVDD (1.5 V) 0.63 W 1, 2
PCI Express 1, 2.5 G-baud X/SVDD (1.0 V) 0.11 W 1
2, 2.5 G-baud X/SVDD (1.0 V) 0.15 W 1
4, 2.5 G-baud X/SVDD (1.0 V) 0.229 W 1
SGMII 1, 1.25G-baud X/SVDD (1.0 V) 0.096 W 1
eLBC 16-bit, 83MHz BVDD (1.8 V) 0.017 W 1, 3
BVDD (2.5 V) 0.03 W 1, 3
BVDD (3.3 V) 0.047 W 1, 3
eTSEC RGMII LVDD (2.5 V) 0.075 W 1, 3, 4
LVDD (3.3 V) 0.124 W 1, 3, 4

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Freescale Semiconductor 35
Electrical Characteristics

Table 9. I/O Power Supply Estimated Values (continued)

Interface Parameter Symbol Typical Unit Notes

eSDHC CVDD (1.8 V) 0.005 W 1, 3

CVDD (2.5 V) 0.009 W 1, 3
CVDD (3.3 V) 0.014 W 1, 3
USB CVDD (1.8 V) 0.004 W 1, 3
CVDD (2.5 V) 0.008 W 1, 3
CVDD (3.3 V) 0.012 W 1, 3
eSPI CVDD (1.8 V) 0.004 W 1, 3
CVDD (2.5 V) 0.006 W 1, 3
CVDD (3.3 V) 0.01 W 1, 3
2C
I OVDD (3.3 V) 0.002 W 1, 3
DUART OVDD (3.3 V) 0.006 W 1, 3
IEEE1588 LVDD (2.5 V) 0.004 W 1, 3
LVDD (3.3 V) 0.007 W 1, 3
QUICC Engine block (UTOPIA) BVDD (3.3 V) 0.08 W 1, 3
L2
Notes:
1. The typical values are estimates based on simulations 65 C junction temperature.
2. DDR power numbers are based on 2 rank DIMM.
3. Assuming 15 pF total capacitance load per pin.
4. The current values are per each eTSEC used.
5. GPIO 8 support on OVDD and 8 on BVDD rail supply.

2.7 Input Clocks

This section discusses the system clock timing, SYSCLK and spread spectrum sources, real time clock timing, eTSEC Gigabit
reference clock timing, DDR clock timing, and other input clocks.

NOTE:
The rise / fall time on QE input pins should not exceed 5ns. This should be enforced
especially on clock signals. Rise time refers to signal transitions from 10% to 90% of Vcc;
fall time refers to transitions from 90% to 10% of Vcc.

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36 Freescale Semiconductor
 Electrical Characteristics

2.7.1 System Clock Timing

This table provides the system clock (SYSCLK) DC specifications.
Table 10. SYSCLK DC Electrical Characteristics
At recommended operating conditions with OVDD = 3.3 V 165 mV

Parameter Symbol Min Typical Max Unit Notes

Input high voltage VIH 2.0 V 1

Input low voltage VIL 0.8 V 1
Input capacitance CIN 7 15 pf
Input current (V IN= 0 V or VIN = V DD) IIN 50 A 2
Note:
1. The max VIH, and min VIL values can be found in Table 3.
2. The symbol VIN, in this case, represents the OVIN symbol referenced inTable 3.

This table provides the system clock (SYSCLK) AC timing specifications.

Table 11. SYSCLK AC Timing Specifications

At recommended operating conditions (see Table 3) with OVDD = 3.3 V 165 mV

Parameter/Condition Symbol Min Typical Max Unit Notes

SYSCLK frequency fSYSCLK 64 100 MHz 1

SYSCLK cycle time tSYSCLK 10 15 ns

SYSCLK duty cycle tKHK/tSYSCLK 40 60 % 2

SYSCLK slew rate 1 4 V/ns 3

SYSCLK peak period jitter 150 ps

SYSCLK jitter phase noise at 56dBc 500 KHz 4

AC Input Swing Limits at 3.3 V OVDD VAC 1.9 V

Notes:
1. Caution: The CCB_clk to SYSCLK ratio and e500 core to CCB_clk ratio settings must be chosen such that the resulting
SYSCLK frequency, e500 core frequency, and CCB_clk frequency do not exceed their respective maximum or minimum
operating frequencies.Refer to for ratio settings.
2. Measured at the rising edge and/or the falling edge at OV DD/2.
3. Slew rate as measured from 0.3 VAC at center of peak to peak voltage at clock input.
4. Phase noise is calculated as FFT of TIE jitter.

2.7.2 SYSCLK and Spread Spectrum Sources

Spread spectrum clock sources are an increasingly popular way to control electromagnetic interference emissions (EMI) by
spreading the emitted noise to a wider spectrum and reducing the peak noise magnitude in order to meet industry and
government requirements. These clock sources intentionally add long-term jitter in order to diffuse the EMI spectral content.
The jitter specification given in Table 12 considers short-term (cycle-to-cycle) jitter only and the clock generators
cycle-to-cycle output jitter should meet the processors input cycle-to-cycle jitter requirement. Frequency modulation and
spread are separate concerns, and the P1016 is compatible with spread spectrum sources if the recommendations listed in this
table are observed.

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 37
Electrical Characteristics

Table 12. Spread Spectrum Clock Source Recommendations

At recommended operating conditions. See Table 3.

Parameter Min Max Unit Notes

Frequency modulation 60 kHz

Frequency spread 1.0 % 1, 2

Note:
1. SYSCLK frequencies resulting from frequency spreading, and the resulting core and VCO frequencies, must meet the
minimum and maximum specifications given in Table 11.
2. Maximum spread spectrum frequency may not result in exceeding any maximum operating frequency of the device.

CAUTION
The processors minimum and maximum SYSCLK, DDRCLK, core, and VCO frequencies
must not be exceeded regardless of the type of clock source. Therefore, systems in which
the processor is operated at its maximum rated e500 core/DDR memory frequency should
avoid violating the stated limits by using down-spreading only.

2.7.3 Real Time Clock Timing

The real time clock timing (RTC) input is sampled by the platform clock (CCB clock). The output of the sampling latch is then
used as an input to the counters of the PIC and the TimeBase unit of the e500. There is no jitter specification. The minimum
pulse width of the RTC signal should be greater than 2 the period of the CCB clock. That is, minimum clock high time is
2 tCCB, and minimum clock low time is 2 tCCB. There is no minimum RTC frequency; RTC may be grounded if not needed.

2.7.4 eTSEC Gigabit Reference Clock Timing

This table lists the eTSEC gigabit reference clock DC electrical characteristics.
Table 13. eTSEC Gigabit Reference Clock DC Electrical Characteristics

Parameter Symbol Min Max Unit Notes

High-level input voltage VIH 2 V 1

Low-level input voltage VIL 0.8 V 1

Input current (V IN = 0 V or VIN = VDD) IIN 40 A 2

Note:
1. The max VIH, and min VIL values can be found in Table 3.
2. The symbol VIN, in this case, represents the OVIN symbol referenced in Table 3.

This table provides the eTSEC gigabit reference clocks (EC_GTX_CLK125) AC timing specifications.
Table 14. EC_GTX_CLK125 AC Timing Specifications
At recommended operating conditions with LVDD = 2.5 0.125 mV/ 3.3 V 165 mV

Parameter/Condition Symbol Min Typical Max Unit Notes

EC_GTX_CLK125 frequency tG125 125 MHz

EC_GTX_CLK125 cycle time tG125 8 ns

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38 Freescale Semiconductor
 Electrical Characteristics

Table 14. EC_GTX_CLK125 AC Timing Specifications

At recommended operating conditions with LVDD = 2.5 0.125 mV/ 3.3 V 165 mV (continued)

Parameter/Condition Symbol Min Typical Max Unit Notes

EC_GTX_CLK rise and fall time tG125R/tG125F ns 1

LVDD = 2.5 V 0.75
LVDD = 3.3 V 1.0

EC_GTX_CLK125 duty cycle tG125H/tG125 % 2

1000Base-T for RGMII 47 53

EC_GTX_CLK125 jitter 150 ps 2

Notes:
1. Rise and fall times for EC_GTX_CLK125 are measured from 0.5 and 2.0 V for LVDD = 2.5 V and from 0.6 and 2.7 V for
LVDD = 3.3 V.
2. EC_GTX_CLK125 is used to generate the GTX clock for the eTSEC transmitter with 2% degradation. EC_GTX_CLK125
duty cycle can be loosened from 47/53% as long as the PHY device can tolerate the duty cycle generated by the eTSEC
GTX_CLK. See Section 2.11.3.2, RGMII AC Timing Specifications, for duty cycle for 10Base-T and 100Base-T reference
clock.

2.7.5 DDR Clock Timing

This table provides the system clock (DDRCLK) DC specifications.
Table 15. DDRCLK DC Electrical Characteristics
At recommended operating conditions with OVDD = 3.3 V 165 mV

Parameter Symbol Min Typical Max Unit Notes

Input high voltage VIH 2.0 OVDD + 0.3 V 1

Input low voltage VIL 0.3 0.8 V 1
Input capacitance CIN 7 15 pf
Input current (V IN= 0 V or VIN = V DD) IIN 50 A 2
Note:
1. The symbol VIN, in this case, represents the OVIN symbol referenced in Table 2 and Table 3.

This table provides the DDR clock (DDRCLK) AC timing specification.

Table 16. DDRCLK AC Timing Specifications
At recommended operating conditions with OVDD of 3.3 V 5%.

Parameter/Condition Symbol Min Typical Max Unit Notes

DDRCLK frequency fDDRCLK 66.66 166.7 MHz 1, 2

DDRCLK cycle time tDDRCLK 6 15 ns 1, 2

DDRCLK duty cycle tKHK/tDDRCLK 40 60 % 2

DDRCLK slew rate 1 4 V/ns 3

DDRCLK peak period jitter 150 ps

DDRCLK jitter phase noise at 56dBc 500 KHz 4

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Freescale Semiconductor 39
Electrical Characteristics

Table 16. DDRCLK AC Timing Specifications (continued)

At recommended operating conditions with OVDD of 3.3 V 5%.

Parameter/Condition Symbol Min Typical Max Unit Notes

AC Input Swing Limits at 3.3 V OV DD VAC 1.9 V

Notes:
1. Caution: The DDR complex clock to DDRCLK ratio settings must be chosen such that the resulting DDR complex clock
frequency does not exceed the maximum or minimum operating frequencies. Refer to P1025 QorIQ Integrated Processor
Reference Manual for ratio settings.
2. Measured at the rising edge and/or the falling edge at OV DD/2.
3. Slew rate as measured from 0.3 VAC at center of peak to peak voltage at clock input.
4. Phase noise is calculated as FFT of TIE jitter.

2.7.6 Other Input Clocks

A description of the overall clocking of this device is available in the QorIQ P1025 Integrated Host Processor Family Reference
Manual in the form of a clock subsystem block diagram. For information on the input clocks of other functional blocks of the
platform, such as SerDes and eTSEC, see the specific section of this document.

2.8 DDR3 SDRAM

This section describes the DC and AC electrical specifications for the DDR SDRAM interface.

2.8.1 DDR SDRAM DC Electrical Characteristics

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40 Freescale Semiconductor
 Electrical Characteristics

This table provides the recommended operating conditions for the DDR SDRAM controller when interfacing to DDR3
SDRAM.
Table 17. DDR3 SDRAM Interface DC Electrical Characteristics
At recommended operating condition with GVDD = 1.5 V1

Parameter Symbol Min Max Unit Note

I/O reference voltage MVREF 0.49 GVDD 0.51 GVDD V 2, 3, 4

Input high voltage VIH MVREF + 0.100 GVDD V 5
Input low voltage VIL GND MVREF 0.100 V 5
I/O leakage current IOZ 50 50 A 6
Notes:
1. GV DD is expected to be within 50 mV of the DRAMs voltage supply at all times. The DRAMs and memory controllers voltage
supply may or may not be from the same source.
2. MVREFn is expected to be equal to 0.5 GVDD and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREFn may not exceed the MVREFn DC level by more than 1% of GVDD (i.e. 15 mV).
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made, and it is expected to be
equal to MVREFn with a min value of MVREFn 0.04 and a max value of MVREFn + 0.04. VTT should track variations in the
DC level of MVREFn.
4. The voltage regulator for MVREFn must meet the specifications stated in Table 19.
5. Input capacitance load for DQ, DQS, and DQS are available in the IBIS models.
6. Output leakage is measured with all outputs disabled, 0 V VOUT GVDD.

This table provides the DDR controller interface capacitance for DDR3.
Table 18. DDR3 SDRAM Capacitance
At recommended operating conditions with GVDD of 1.5 V 5% for DDR3

Parameter Symbol Min Max Unit Notes

Input/output capacitance: DQ, DQS, DQS CIO 6 8 pF 5

Delta input/output capacitance: DQ, DQS, CDIO 0.5 pF 5
DQS
Note:
5. This parameter is sampled. GVDD = 1.5 V 0.075 V (for DDR3), f = 1 MHz, TA = 25C, VOUT = GVDD/2, VOUT
(peak-to-peak) = 0.175 V.

This table provides the current draw characteristics for MV REF.

Table 19. Current Draw Characteristics for MVREF
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Current draw for DDR3 SDRAM for MV REF MVREF 1250 A

2.8.2 DDR3 SDRAM Interface AC Timing Specifications

This section provides the AC timing specifications for the DDR SDRAM controller interface.

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Freescale Semiconductor 41
Electrical Characteristics

2.8.2.1 DDR3 SDRAM Interface Input AC Timing Specifications

This table provides the input AC timing specifications for the DDR controller when interfacing to DDR3 SDRAM.
Table 20. DDR3 SDRAM Interface Input AC Timing Specifications
At recommended operating conditions with GVDD of 1.5 V 5%

Parameter Symbol Min Max Unit Notes

AC input low voltage VILAC MVREF 0.175 V

AC input high voltage VIHAC MVREF + 0.175 V

This table provides the input AC timing specifications for the DDR controller when interfacing to DDR3 SDRAM.
Table 21. DDR3 SDRAM Interface Input AC Timing Specifications
At recommended operating conditions with GVDD of 1.5 V 5%

Parameter Symbol Min Max Unit Notes

Controller Skew for MDQSMDQ/MECC tCISKEW ps

667 MHz data rate 390 390
Tolerated Skew for MDQSMDQ/MECC tDISKEW ps 2
667 MHz data rate 360 360
Note:
1. tCISKEW represents the total amount of skew consumed by the controller between MDQS[n] and any corresponding bit that
will be captured with MDQS[n]. This should be subtracted from the total timing budget.
2. The amount of skew that can be tolerated from MDQS to a corresponding MDQ signal is called tDISKEW.This can be
determined by the following equation: tDISKEW = (T 4 abs(tCISKEW)) where T is the clock period and abs(tCISKEW) is the
absolute value of tCISKEW.

This figure shows the DDR3 SDRAM interface input timing diagram.

MCK[n]
MCK[n]
t
MCK

MDQS[n]

t D ISKEW

MDQ[x] D0 D1
t D ISKEW
t DISKEW

Figure 8. DDR3 SDRAM Interface Input Timing Diagram

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2.8.2.2 DDR3 SDRAM Interface Output AC Timing Specifications

This table contains the output AC timing targets for the DDR3 SDRAM interface.
Table 22. DDR3 SDRAM Interface Output AC Timing Specifications
At recommended operating conditions with GVDD of 1.5 V 5%

Parameter Symbol1 Min Max Unit Notes

MCK[n] cycle time tMCK 3 5 ns 2

ADDR/CMD output setup with respect to MCK tDDKHAS ns 3
667 MHz data rate .950
ADDR/CMD output hold with respect to MCK tDDKHAX ns 3
667 MHz data rate .950
MCS[n] output setup with respect to MCK tDDKHCS ns 3
667 MHz data rate .950
MCS[n] output hold with respect to MCK tDDKHCX ns 3
667 MHz data rate .950
MCK to MDQS Skew tDDKHMH ns 4
667 MHz data rate 0.6 0.6
MDQ/MECC/MDM output setup with respect to tDDKHDS, ps 5
MDQS tDDKLDS
667 MHz data rate 325
MDQ/MECC/MDM output hold with respect to tDDKHDX, ps 5
MDQS tDDKLDX
667 MHz data rate 325
MDQS preamble tDDKHMP 0.9 tMCK ns
MDQS postamble tDDKHME 0.4 tMCK 0.6 tMCK ns
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until outputs
(A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock reference
(K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK and MCDQS/MCDQS referenced measurements are made from the crossing of the two signals.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ/MECC/MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing
(DD) from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through
control of the MDQS override bits (called WR_DATA_DELAY) in the TIMING_CFG_2 register. This is typically set to the
same delay as in DDR_SDRAM_CLK_CNTL[CLK_ADJUST]. The timing parameters listed in the table assume that these
two parameters have been set to the same adjustment value. See the P1025 QorIQ Integrated Processor Reference Manual
for a description and explanation of the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.

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Electrical Characteristics

NOTE
For the ADDR/CMD setup and hold specifications in Table 22, it is assumed that the clock
control register is set to adjust the memory clocks by applied cycle.
This figure shows the DDR3 SDRAM interface output timing for the MCK to MDQS skew measurement (tDDKHMH).

MCK[n]

MCK[n]
tMCK

tDD KH MHmax) = 0.6 ns or 0.375 n

s

MDQS

tDD KH MH (min) = 0.6 ns or 0.375 ns

MDQS

Figure 9. tDDKHMH Timing Diagram

This figure shows the DDR3 SDRAM output timing diagram.

MCK
MCK
tMCK

t DDKHAS , tDDKHC S
t DD KH AX, t DDKHCX

ADDR/CMD Write A0 NOOP

tDD KHMP
tDD KHMH

MDQS[n]
tDDKHME
t D DKH DS
t DD KLD S

MDQ[x] D0 D1
t DDKLDX
t DDKHDX

Figure 10. DDR3 Output Timing Diagram

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This figure provides the AC test load for the DDR3 controller bus.

Output Z0 = 50 GVDD/2
RL = 50

Figure 11. DDR3 Controller Bus AC Test Load

2.8.2.3 DDR3 SDRAM Differential Timing Specifications

This section describes the DC and AC differential timing specifications for the DDR3 SDRAM controller interface.
This figure shows the differential timing specification.

GVDD

VTR

GVDD /2
VOX or VIX

VCP

GND

Figure 12. DDR3 SDRAM Differential Timing Specifications

NOTE
VTR specifies the true input signal (such as MCK or MDQS) and VCP is the
complementary input signal (such as MCK or MDQS).
This table provides the DDR3 differential specifications for the differential signals MDQS/MDQS and MCK/MCK.
Table 23. DDR3 SDRAM Differential Electrical Characteristics

Parameter Symbol Min Max Unit Notes

Input AC Differential Crosspoint Voltage VIXAC 0.5 GVDD 0.150 0.5 GVDD + 0.150 V
Output AC Differential Crosspoint Voltage VOXAC 0.5 GVDD 0.115 0.5 GVDD + 0.115 V

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2.9 eSPI
This section describes the DC and AC electrical specifications for the SPI interface.

2.9.1 eSPI DC Electrical Characteristics

This table provides the DC electrical characteristics for eSPI interface at CVDD = 3.3 V.
Table 24. SPI DC Electrical Characteristics (3.3V)
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Note

Input high voltage VIH 2.0 V 1

Input low voltage VIL 0.8 V 1
Input current (0 V VIN CVDD) IIN 50 A 2
Output high voltage (IOH = 6.0 mA) VOH 2.4 V
Output low voltage (IOL = 6.0mA) VOL 0.5 V
Output low voltage (IOL = 3.2mA) VOL 0.4 V
Note:
1. Note that the min VILand max VIH values are based on the respective min and max CVIN values found in Table 3.
2. Note that the symbol VIN, in this case, represents the CVIN symbol referenced in Section 2.1.2, Recommended Operating
Conditions.

This table provides the DC electrical characteristics for the eSPI interface operating at CVDD = 2.5 V.
Table 25. SPI DC Electrical Characteristics (2.5 V)

Parameter Symbol Min Max Unit Note

High-level input voltage VIH 1.7 V 1

Low-level input voltage VIL 0.7 V 1
Input current (VIN = 0 V or VIN = CVDD) IIN 40 A 2
High-level output voltage (CVDD = min, IOH = 1 mA) VOH 2.0 V
Low-level output voltage (CVDD = min, IOL = 1 mA) VOL 0.4 V
Note:
1. The min VILand max VIH values are based on the respective min and max CVIN values found in Table 3.
2. The symbol VIN, in this case, represents the CVIN symbol referenced in Section 2.1.2, Recommended Operating
Conditions.

This table provides the DC electrical characteristics for the eSPI interface operating at CVDD = 1.8 V.
Table 26. SPI DC Electrical Characteristics (1.8 V)

Parameter Symbol Min Max Unit Note

High-level input voltage VIH 1.25 V 1

Low-level input voltage VIL 0.6 V 1

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Table 26. SPI DC Electrical Characteristics (1.8 V) (continued)

Parameter Symbol Min Max Unit Note

Input current (VIN = 0 V or VIN = CVDD) IIN 40 A 2

High-level output voltage (CVDD = min, IOH = 0.5 mA) VOH 1.35 V
Low-level output voltage (CVDD = min, IOL = 0.5 mA) VOL 0.4 V
Note:
1. The min VILand max VIH values are based on the respective min and max CVIN values found in Table 3.
2. The symbol VIN, in this case, represents the CVIN symbol referenced in Section 2.1.2, Recommended
Operating Conditions.

2.9.2 eSPI AC Timing Specifications

This table provides the SPI input and output AC timing specifications.
Table 27. SPI AC Timing Specifications1
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Note

SPI outputsMaster data (internal clock) hold time tNIKHOX 0.5+(tPLAT ns 2, 3

FOR
M_CLK
*SPMODE
[HO
_ADJ])
SPI outputsMaster data (internal clock) delay tNIKHOV 5.5+(tPLAT ns 2, 3
FORM
_CLK
*SPMODE
[HO_
ADJ])
SPI_CS outputsMaster data (internal clock) hold time tNIKHOX2 0 ns 2
SPI_CS outputsMaster data (internal clock) delay tNIKHOV2 6.0 ns 2
SPI inputsMaster data (internal clock) input setup time tNIIVKH 5 ns
SPI inputsMaster data (internal clock) input hold time tNIIXKH 0 ns
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tNIKHOV symbolizes the NMSI
outputs internal timing (NI) for the time tSPI memory clock reference (K) goes from the high state (H) until outputs (O) are
valid (V).
2. Output specifications are measured from the 50% level of the rising edge of CLKIN to the 50% level of the signal. Timings
are measured at the pin.
3. See the P1025 QorIQ Integrated Processor Reference Manual for detail about the register SPMODE

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This figure provides the AC test load for the SPI.

Output Z0 = 50 CVDD/2
RL = 50

Figure 13. SPI AC Test Load

This figure represents the AC timing from Table 27 in master mode (internal clock). Note that although the specifications are
generally refer to the rising edge of the clock, these AC timing diagrams also apply when the falling edge is the active edge.
Also, note that the clock edge is selectable on SPI.

SPICLK (output) 1

tNIIXKH
tNIIVKH
Input Signals:

tNIKHOX
tNIKHOV
Output Signals:

tNIKHOX2
tNIKHOV2
Output Signals:
SPI_CS[0:3]1

Figure 14. SPI AC Timing in Master Mode (Internal Clock) Diagram

2.10 DUART
This section describes the DC and AC electrical specifications for the DUART interface.

2.10.1 DUART DC Electrical Characteristics

This table provides the DC electrical characteristics for the DUART interface.
Table 28. DUART DC Electrical Characteristics
For recommended operating conditions, see Table 3

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2 V 1

Input low voltage VIL 0.8 V 1
Input current (OVIN = 0 V or OVIN = OVDD) IIN 50 A 2
Output high voltage (OVDD = mn, IOH = 2 mA) VOH 2.4 V

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Table 28. DUART DC Electrical Characteristics

For recommended operating conditions, see Table 3

Parameter Symbol Min Max Unit Notes

Output low voltage (OVDD = min, IOL = 2 mA) VOL 0.4 V

Note:
1. Note that the min VILand max VIH values are based on the respective min and max OVIN values found in Figure 3.
2. Note that the symbol OVIN represents the input voltage of the supply. It is referenced in Figure 3.

2.10.2 DUART AC Electrical Specifications

This table provides the AC timing parameters for the DUART interface.
Table 29. DUART AC Timing Specifications

Parameter Value Unit Notes

Minimum baud rate CCB clock/1,048,576 baud 1

Maximum baud rate CCB clock/16 baud 2
Oversample rate 16 3
Notes:
1. CCB clock refers to the platform clock.
2. Actual attainable baud rate will be limited by the latency of interrupt processing.
3. The middle of a start bit is detected as the 8th sampled 0 after the 1-to-0 transition of the start bit. Subsequent bit values are
sampled each 16th sample.

2.11 Ethernet: Enhanced Three-Speed Ethernet (eTSEC)

(10/100/1000 Mbps)MII/RMII/RGMII/SGMII Electrical
Characteristics
This section provides the AC and DC electrical characteristics for enhanced three-speed Ethernet 10/100/1000 controller and
MII management.

2.11.1 MII Interface Electrical Specifications

This section provides AC and DC electrical characteristics of MII interface for eTSEC.

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Electrical Characteristics

2.11.1.1 MII and RMII DC Electrical Characteristics

All MII drivers and receivers comply with the DC parametric attributes specified in this table.
Table 30. MII and RMII DC Electrical Characteristics
At recommended operating conditions with LVDD = 3.3 V

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2.0 V 1

Input low voltage VIL 0.8 V
Input high current (VIN = LVDD) IIH 50 A 2
Input low current (VIN = GND) IIL 50 A 2
Output high voltage (LVDD = min, IOH = 4.0 mA) VOH 2.4 V
Output low voltage (LVDD = min, IOL = 4.0 mA) VOL 0.4 V
Note:
1. The min VILand max VIH values are based on the respective min and max LVIN values found in Table 3.
2. The symbol VIN, in this case, represents the LVIN symbols referenced in Table 2 and Table 3.

2.11.1.2 MII AC Timing Specifications

This section describes the MII transmit and receive AC timing specifications.

2.11.1.2.1 MII Transmit AC Timing Specifications

This table provides the MII transmit AC timing specifications.
Table 31. MII Transmit AC Timing Specifications
For recommended operating conditions, see Table 3.

Parameter Symbol Min Typ Max Unit

TX_CLK clock period 10 Mbps tMTX 399.96 400 400.04 ns

TX_CLK clock period 100 Mbps tMTX 39.996 40 40.004 ns
TX_CLK duty cycle tMTXH/tMTX 35 65 %
TX_CLK to MII data TXD[3:0], TX_ER, TX_EN delay tMTKHDX 1 5 15 ns
TX_CLK data clock rise (20%80%) tMTXR 1.0 4.0 ns
TX_CLK data clock fall (80%20%) tMTXF 1.0 4.0 ns

This figure shows the MII transmit AC timing diagram.

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tMTX tMTXR

TX_CLK

tMTXH tMTXF
TXD[3:0]
TX_EN
TX_ER
tMTKHDX

Figure 15. MII Transmit AC Timing Diagram

2.11.1.2.2 MII Receive AC Timing Specifications

This table provides the MII receive AC timing specifications.
Table 32. MII Receive AC Timing Specifications

Parameter Symbol Min Typ Max Unit

RX_CLK clock period 10 Mbps tMRX 399.96 400 400.04 ns

RX_CLK clock period 100 Mbps tMRX 39.996 40 40.004 ns
RX_CLK duty cycle tMRXH/tMRX 35 65 %
RXD[3:0], RX_DV, RX_ER setup time to RX_CLK tMRDVKH 10.0 ns
RXD[3:0], RX_DV, RX_ER hold time to RX_CLK tMRDXKH 10.0 ns
RX_CLK clock rise (20%80%) tMRXR 1.0 4.0 ns
RX_CLK clock fall time (80%20%) tMRXF 1.0 4.0 ns
Note: The frequency of RX_CLK should not exceed the frequency of TX_CLK by more than 300 ppm.

This figure provides the AC test load for eTSEC.

Output Z0 = 50 LVDD/2
RL = 50

Figure 16. eTSEC AC Test Load

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Electrical Characteristics

This figure shows the MII receive AC timing diagram.

tMRX tMRXR

RX_CLK

tMRXH tMRXF
RXD[3:0]
RX_DV Valid Data
RX_ER
tMRDVKH
tMRDXKL
Figure 17. MII Receive AC Timing Diagram

2.11.2 RMII AC Timing Specifications

In RMII mode, the reference clock should be fed to TSECn_TX_CLK. This section describes the RMII transmit and receive
AC timing specifications.
This table lists the RMII transmit AC timing specifications.
Table 33. RMII Transmit AC Timing Specifications
For recommended operating conditions, see Table 3.

Parameter Symbol Min Typ Max Unit

TSECn_TX_CLK clock period tRMT 20.0 ns

TSECn_TX_CLK duty cycle tRMTH 35 65 %
TSECn_TX_CLK peak-to-peak jitter tRMTJ 250 ps
Rise time TSECn_TX_CLK (20%80%) tRMTR 1.0 5.0 ns
Fall time TSECn_TX_CLK (80%20%) tRMTF 1.0 5.0 ns
TSECn_TX_CLK to RMII data TXD[1:0], TX_EN delay tRMTDX 2.0 10.0 ns

This figure shows the RMII transmit AC timing diagram.

tRMT tRMTR

REF_CLK

tRMTH tRMTF
TXD[1:0]
TX_EN
TX_ER
tRMTDX
Figure 18. RMII Transmit AC Timing Diagram

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This table lists the RMII receive AC timing specifications.

Table 34. RMII Receive AC Timing Specifications
For recommended operating conditions, see Table 3

Parameter Symbol Min Typ Max Unit

TSECn_TX_CLK clock period tRMR 20.0 ns

TSECn_TX_CLK duty cycle tRMRH 35 65 %
TSECn_TX_CLK peak-to-peak jitter tRMRJ 250 ps
Rise time TSECn_TX_CLK (20%80%) tRMRR 1.0 5.0 ns
Fall time TSECn_TX_CLK (80%20%) tRMRF 1.0 5.0 ns
RXD[1:0], CRS_DV, RX_ER setup time to TSECn_TX_CLK rising edge tRMRDV 4.0 ns
RXD[1:0], CRS_DV, RX_ER hold time to TSECn_TX_CLK rising edge tRMRDX 2.0 ns

This figure provides the AC test load for eTSEC.

Output Z0 = 50 LVDD/2
RL = 50

Figure 19. eTSEC AC Test Load

This figure shows the RMII receive AC timing diagram.

tRMR tRMRR

TSECn_TX_CLK

tRMRH tRMRF
RXD[1:0]
CRS_DV Valid Data
RX_ER
tRMRDV
tRMRDX

Figure 20. RMII Receive AC Timing Diagram

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2.11.3 RGMII Interface Electrical Specifications

This section provides AC and DC electrical characteristics of RGMII interface for eTSEC.

2.11.3.1 RGMII DC Electrical Characteristics

This table shows the RGMII DC electrical characteristics when operating from a 2.5 V supply.
Table 35. RGMII DC Electrical Characteristics (2.5V)
At recommended operating conditions with LVDD = 2.5 V

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 1.70 V

Input low voltage VIL 0.70 V
Input high current (VIN = LVDD) IIH 50 A
Input low current (VIN = GND) IIL 50 A 2
Output high voltage (LVDD = min, IOH = 1.0 mA) VOH 2.00 LVDD + 0.3 V
Output low voltage (LVDD = min, IOL = 1.0 mA) VOL GND 0.3 0.40 V
Note:
1. Note that the min VILand max VIH values are based on the respective min and max LVIN values found in Table 3.
2. The symbol VIN, in this case, represents the LVIN symbols referenced in Table 3.

2.11.3.2 RGMII AC Timing Specifications

This table presents the RGMII AC timing specifications.
Table 36. RGMII AC Timing Specifications
For recommended operating conditions, see Table 3.

Parameter Symbol1 Min Typ Max Unit Notes

Data to clock output skew (at transmitter) tSKRGT_TX 500 0 500 ps 5

Data to clock input skew (at receiver) tSKRGT_RX 1.0 2.6 ns 2
Clock period duration tRGT 7.2 8.0 8.8 ns 3
Duty cycle for 10BASE-T and 100BASE-TX tRGTH/tRGT 40 50 60 % 3, 4

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Table 36. RGMII AC Timing Specifications (continued)

For recommended operating conditions, see Table 3.

Parameter Symbol1 Min Typ Max Unit Notes

Duty cycle for Gigabit tRGTH/tRGT 45 50 55 %

Rise time (20%80%) tRGTR 0.75 ns
Fall time (20%80%) tRGTF 0.75 ns
Notes:
1. In general, the clock reference symbol representation for this section is based on the symbols RGT to represent RGMII
timing. For example, the subscript of tRGT represents the RGMII receive (RX) clock. Note also that the notation for rise (R)
and fall (F) times follows the clock symbol that is being represented. For symbols representing skews, the subscript is skew
(SK) followed by the clock that is being skewed (RGT).
2. This implies that PC board design will require clocks to be routed such that an additional trace delay of greater than 1.5 ns
will be added to the associated clock signal. Many PHY vendors already incorporate the necessary delay inside their chip.
If so, additional PCB delay is probably not needed.
3. For 10 and 100 Mbps, tRGT scales to 400 ns 40 ns and 40 ns 4 ns, respectively.
4. Duty cycle may be stretched/shrunk during speed changes or while transitioning to a received packet's clock domains as
long as the minimum duty cycle is not violated and stretching occurs for no more than three tRGT of the lowest speed
transitioned between.
5. The frequency of RX_CLK should not exceed the frequency of GTX_CLK125 by more than 300 ppm.

This figure shows the RGMII AC timing and multiplexing diagrams.

















 
  




 



 
   



  
  






 

 


Figure 21. RGMII AC Timing and Multiplexing Diagrams

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Electrical Characteristics

2.11.4 SGMII Interface Electrical Characteristics

Each SGMII port features a 4-wire AC-Coupled serial link from the dedicated SerDes interface of P1016 as shown in Figure 23,
where CTX is the external (on board) AC-Coupled capacitor. Each output pin of the SerDes transmitter differential pair features
50- output impedance. Each input of the SerDes receiver differential pair features 50- on-die termination to SGND_SRDS.
The reference circuit of the SerDes transmitter and receiver is shown in Figure 49.

2.11.4.1 SGMII DC Electrical Characteristics

This section discusses the electrical characteristics for the SGMII interface.

2.11.4.1.1 DC Requirements for SGMII SD_REF_CLK and SD_REF_CLK

The characteristics and DC requirements of the separate SerDes reference clock are described in Section 2.18.2.2, DC Level
Requirement for SerDes Reference Clocks.

2.11.4.1.2 SGMII Transmit DC Timing Specifications

This table describe the SGMII SerDes transmitter AC-Coupled DC electrical characteristics. Transmitter DC characteristics are
measured at the transmitter outputs (SDn_TX[n] and SDn_TX[n]) as shown in Figure 23.
Table 37. SGMII DC Transmitter Electrical Characteristics
For recommended operating conditions, see Table 3.

Parameter Symbol Min Typ Max Unit Notes

Output high voltage VOH XVDD_SRDS2-Typ/2 + mV 1

|VOD|-max/2
Output low voltage VOL XVDD_SRDS2-Typ/2 mV 1
|VOD|-max/2
304 475 689 Equalization setting: 1.0x
279 436 632 Equalization setting: 1.09x
254 396 574 Equalization setting: 1.2x
229 357 518 Equalization setting: 1.33x
202 316 459 Equalization setting: 1.5x
Output differential
voltage2, 3, 4 |VOD| 178 277 402 mV Equalization setting: 1.71x
(XVDD-Typ at 1.0V)
152 237 344 Equalization setting: 2.0x
Output impedance RO 40 50 60
(single-ended)
Note:
1. This will not align to DC-coupled SGMII.
2. |VOD| = |VSD2_TXn VSD2_TXn|. |VOD| is also referred as output differential peak voltage. VTX-DIFFp-p = 2*|VOD|.
3. The |VOD| value shown in the table assumes the following transmit equalization setting in the XMITEQAB (for SerDes lanes
A & B) or XMITEQEF (for SerDes lanes E & E) bit field of the SerDes 2 control register:
The MSbit (bit 0) of the above bit field is set to zero (selecting the full VDD-DIFF-p-p amplitude - power up default);
The LSbits (bit [1:3]) of the above bit field is set based on the equalization setting shown in table.
4. The |VOD| value shown in the Typ column is based on the condition of XVDD_SRDS2-Typ=1.0 V, no common mode offset
variation, SerDes transmitter is terminated with 100- differential load between SD_TX[n] and SD_TX[n].

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50 SD_TX CTX SD_RX

50
Transmitter Receiver

50

CTX
SD_TX SD_RX 50
P1016SGMII
SerDes Interface
SD_RX CTX SD_TX 50

50
Receiver Transmitter

50
CTX
50 SD_RX SD_TX

Figure 22. 4-Wire AC-Coupled SGMII Serial Link Connection Example

P1016SGMII
SerDes Interface

50 SD_TXn
50

Transmitter Vos VOD

50
50
SD_TXn

Figure 23. SGMII Transmitter DC Measurement Circuit

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2.11.4.1.3 SGMII DC Receiver Timing Specification

This table lists the SGMII DC receiver electrical characteristics. Source synchronous clocking is not supported. Clock is
recovered from the data.
Table 38. SGMII DC Receiver Electrical Characteristics5
For recommended operating conditions, see Table 3.

Parameter Symbol Min Typ Max Unit Notes

DC Input voltage range N/A 1

Input differential voltage LSTS = 001 VRX_DIFFp-p 100 1200 mV 2, 4
LSTS = 100 175
Loss of signal threshold LSTS = 001 VLOS 30 100 mV 3, 4
LSTS = 100 65 175
Receiver differential input impedance ZRX_DIFF 80 120
Note:
1. Input must be externally AC-coupled.
2. VRX_DIFFp-p is also referred to as peak-to-peak input differential voltage.
3. The concept of this parameter is equivalent to the Electrical Idle Detect Threshold parameter in PCI Express. Refer to the
PCI Express Differential Receiver (RX) Input Specifications section for further explanation.
4. The LSTS shown in the table refers to the EIC2[0:2] or EIC3[0:2] bit field of the GUTS_SRDSCR4 register, depending on
the SerDes lane usage

2.11.4.2 SGMII AC Timing Specifications

This section describes the AC timing specifications for the SGMII interface.

2.11.4.2.1 AC Requirements for SGMII SD_REF_CLK and SD_REF_CLK

Note that the SGMII clock requirements for SD_REF_CLK and SD_REF_CLK are intended to be used within the clocking
guidelines specified by Section 2.18.2.3, AC Requirements for SerDes Reference Clocks.

2.11.4.2.2 SGMII Transmit AC Timing Specifications

This table provides the SGMII transmit AC timing specifications. A source synchronous clock is not supported. The AC timing
specifications do not include RefClk jitter.
Table 39. SGMII Transmit AC Timing Specifications
At recommended operating conditions with XVDD_SRDS = 1.0 V 50 mV

Parameter Symbol Min Typ Max Unit Notes

Deterministic Jitter JD 0.17 UI p-p

Total Jitter JT 0.35 UI p-p
Unit Interval UI 799.92 800 800.08 ps

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Table 39. SGMII Transmit AC Timing Specifications (continued)

At recommended operating conditions with XVDD_SRDS = 1.0 V 50 mV

Parameter Symbol Min Typ Max Unit Notes

AC coupling capacitor CTX 10 200 nF 3

Notes:
1. Each UI is 800 ps 100 ppm.
2. See Figure 25 for single frequency sinusoidal jitter limits.
3. The external AC coupling capacitor is required. It is recommended that it be placed near the device transmitter outputs.

2.11.4.2.3 SGMII AC Measurement details

Transmitter and receiver AC characteristics are measured at the transmitter outputs (SD_TX[n] and SD_TX[n]) or at the
receiver inputs (SD_RX[n] and SD_RX[n]) as depicted in this figure, respectively.

Figure 24. SGMII AC Test/Measurement Load

2.11.4.2.4 SGMII Receiver AC Timing Specifications

This table provides the SGMII receive AC timing specifications. The AC timing specifications do not include RefClk jitter.
Source synchronous clocking is not supported. Clock is recovered from the data.
Table 40. SGMII Receive AC Timing Specifications
At recommended operating conditions with XVDD_SRDS2 = 1.0V 50mV

Parameter Symbol Min Typ Max Unit Notes

Deterministic Jitter Tolerance JD 0.37 UI p-p 1, 2

Combined Deterministic and Random Jitter Tolerance JDR 0.55 UI p-p 1, 2
Total Jitter Tolerance JT 0.65 UI p-p 1, 2
Bit Error Ratio BER 10-12
Unit Interval UI 799.92 800 800.08 ps 3
Notes:
1. Measured at receiver.
2. Refer to RapidIOTM 1/4 LP Serial Physical Layer Specification for interpretation of jitter specifications.
3. Each UI is 800 ps 100 ppm.

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Electrical Characteristics

The sinusoidal jitter in the total jitter tolerance may have any amplitude and frequency in the unshaded region of this figure.

8.5 UI p-p

Sinusoidal
Jitter
Amplitude

0.10 UI p-p

22.1 kHz Frequency 1.875 MHz 20 MHz

Figure 25. Single Frequency Sinusoidal Jitter Limits

2.11.5 MII Management

2.11.5.1 MII Management DC Electrical Characteristics

The MDC and MDIO are defined to operate at a supply voltage of 3.3 V and 2.5 V. The DC electrical characteristics for MDIO
and MDC are provided in the following tables.
Table 41. MII Management DC Electrical Characteristics
At recommended operating conditions with LVDD = 3.3 V

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2.0 V

Input low voltage VIL 0.90 V
Input high current (LVDD = Max, VIN = 2.1 V) IIH 50 A 1
Input low current (LVDD = Max, VIN = 0.5 V) IIL 50 A 1
Output high voltage (LVDD = Min, IOH = 1.0 mA) VOH 2.4 LVDD + 0.3 V

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Table 41. MII Management DC Electrical Characteristics (continued)

At recommended operating conditions with LVDD = 3.3 V

Parameter Symbol Min Max Unit Notes

Output low voltage (LVDD = Min, IOL = 1.0 mA) VOL GND 0.4 V
Note:
1. Note that the symbol VIN, in this case, represents the LVIN symbol referenced in Table 2 and Table 3.

Table 42. MII Management DC Electrical Characteristics

At recommended operating conditions with LVDD = 2.5 V

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 1.70 LVDD + 0.3 V

Input low voltage VIL 0.3 0.70 V
Input high current (VIN = LVDD,) IIH 50 A 1, 2
Input low current (VIN = GND) IIL 50 A
Output high voltage VOH 2.00 LVDD + 0.3 V
(LVDD = Min, IOH = 1.0 mA)
Output low voltage VOL GND 0.3 0.40 V
(LVDD = Min, IOL = 1.0 mA)
Notes:
1. EC1_MDC and EC1_MDIO operate on LVDD.
2. Note that the symbol VIN, in this case, represents the LVIN and TVIN symbols referenced in Table 3.

2.11.5.1.1 MII Management AC Electrical Specifications

This table provides the MII management AC timing specifications.
Table 43. MII Management AC Timing Specifications

Parameter Symbol Min Typ Max Unit Notes

MDC frequency fMDC 2.5 MHz 2

MDC period tMDC 400 ns
MDC clock pulse width high tMDCH 32 ns
MDC to MDIO delay tMDKHDX (16*tplb_clk) 3 (16*tplb_clk) + 3 ns 3, 4
MDIO to MDC setup time tMDDVKH 5 ns

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Electrical Characteristics

Table 43. MII Management AC Timing Specifications (continued)

Parameter Symbol Min Typ Max Unit Notes

MDIO to MDC hold time tMDDXKH 0 ns

Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMDKHDX symbolizes
management data timing (MD) for the time tMDC from clock reference (K) high (H) until data outputs (D) are invalid (X) or
data hold time. Also, tMDDVKH symbolizes management data timing (MD) with respect to the time data input signals (D) reach
the valid state (V) relative to the tMDC clock reference (K) going to the high (H) state or setup time. For rise and fall times,
the latter convention is used with the appropriate letter: R (rise) or F (fall).
2. This parameter is dependent on the platform clock frequency (MIIMCFG [MgmtClk] field determines the clock frequency of
the MgmtClk Clock EC_MDC).
3. This parameter is dependent on the platform clock frequency. The delay is equal to 16 platform clock periods 3 ns. For
example, with a platform clock of 333 MHz, the min/max delay is 48 ns 3 ns. Similarly, if the platform clock is 400 MHz,
the min/max delay is 40 ns 3 ns.
4. tplb_clk is the platform (CCB) clock.

This figure shows the MII management interface timing diagram.

tMDC tMDCR

MDC

tMDCH tMDCF

MDIO
(Input)
tMDDVKH
tMDDXKH
MDIO
(Output)

tMDKHDX
Figure 26. MII Management Interface Timing Diagram

2.11.6 eTSEC IEEE Std 1588 Timing Specifications

2.11.6.1 eTSEC IEEE Std 1588 DC Electrical Characteristics

This table shows eTSEC IEEE Std 1588 DC electrical characteristics when operating at LVDD = 3.3 V supply.
Table 44. eTSEC IEEE 1588 DC Electrical Characteristics (LVDD = 3.3 V)
For recommended operating conditions with LV DD = 3.3 V.

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2.0 V 2

Input low voltage VIL 0.9 V 2
Input high current (LVDD = Max, VIN = 2.1 V) IIH 50 A 1

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Table 44. eTSEC IEEE 1588 DC Electrical Characteristics (LVDD = 3.3 V) (continued)
For recommended operating conditions with LV DD = 3.3 V.

Parameter Symbol Min Max Unit Notes

Input low current (LVDD = Max, VIN = 0.5 V) IIL 50 A 1

Output high voltage (LVDD = Min, IOH = 1.0 mA) VOH 2.4 V
Output low voltage (LVDD = Min, IOL = 1.0 mA) VOL 0.4 V
Note:
1. Note that the symbol VIN, in this case, represents the LVIN symbol referenced in Table 2 and Table 3.
2. The min VIL and max VIH values are based on the respective LVIN values found in Table 3.

This table shows the IEEE 1588 DC electrical characteristics when operating at LVDD = 2.5 V supply.
Table 45. eTSEC IEEE 1588 DC Electrical Characteristics (LVDD = 2.5 V)
For recommended operating conditions with LVDD = 2.5 V

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 1.70 V

Input low voltage VIL 0.70 V
Input current (LVIN = 0 V or LVIN = LVDD) IIH 50 A 2
Output high voltage (LVDD = min, IOH = 1.0 mA) VOH 2.00 V
Output low voltage (LVDD = min, IOL = 1.0 mA) VOL 0.40 V
Note:
1. The min VILand max VIH values are based on the respective min and max LVIN values found in Table 3.
2. The symbol VIN, in this case, represents the LVIN symbols referenced in Table 2 and Table 3.

2.11.6.2 eTSEC IEEE 1588 AC Specifications

This table provides the IEEE 1588 AC timing specifications.
c

Table 46. eTSEC IEEE 1588 AC Timing Specifications

For recommended operating conditions, see Table 3.

Parameter Symbol Min Typ Max Unit Note

TSEC_1588_CLK clock period tT1588CLK 5 TRX_CLK 7 ns 1, 3

TSEC_1588_CLK duty cycle tT1588CLKH 40 50 60 %
/tT1588CLK
TSEC_1588_CLK peak-to-peak jitter tT1588CLKINJ 250 ps
Rise time eTSEC_1588_CLK (20%80%) tT1588CLKINR 1.0 2.0 ns
Fall time eTSEC_1588_CLK (80%20%) tT1588CLKINF 1.0 2.0 ns
TSEC_1588_CLK_OUT clock period tT1588CLKOUT 2 tT1588CLK ns
TSEC_1588_CLK_OUT duty cycle tT1588CLKOTH 30 50 70 %
/tT1588CLKOUT
TSEC_1588_PULSE_OUT tT1588OV 0.5 3.0 ns

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Table 46. eTSEC IEEE 1588 AC Timing Specifications (continued)

For recommended operating conditions, see Table 3.

Parameter Symbol Min Typ Max Unit Note

TSEC_1588_TRIG_IN pulse width tT1588TRIGH 2 tT1588CLK_MAX ns 2

Note:
1. TRX_CLK is the max clock period of eTSEC receiving clock selected by TMR_CTRL[CKSEL]. See the P1025 QorIQ Integrated
Processor Reference Manual for a description of TMR_CTRL registers.
2. It needs to be at least two times the clock period of the clock selected by TMR_CTRL[CKSEL]. See the P1025 QorIQ
Integrated Processor Reference Manual for a description of TMR_CTRL registers.
3. The maximum value of tT1588CLK is not only defined by the value of TRX_CLK, but also defined by the recovered clock. For
example, for 10/100/1000 Mbps modes, the maximum value of tT1588CLK will be 2800, 280, and 56 ns respectively.

This figure shows the data and command output AC timing diagram.

tT1588CLKOUT
tT1588CLKOUTH

TSEC_1588_CLK_OUT

tT1588OV

TSEC_1588_PULSE_OUT
TSEC_1588_TRIG_OUT

Note: The output delay is counted starting at the rising edge if tT1588CLKOUT is non inverting. Otherwise, it
is counted starting at the falling edge.
Figure 27. eTSEC IEEE 1588 Output AC Timing

This figure shows the data and command input AC timing diagram.

tT1588CLK
tT1588CLKH

TSEC_1588_CLK

TSEC_1588_TRIG_IN

tT1588TRIGH

Figure 28. eTSEC IEEE 1588 Input AC Timing

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 Electrical Characteristics

2.12 USB
This section provides the AC and DC electrical specifications for the USB interface of the P1016.

2.12.1 USB DC Electrical Characteristics

The following tables provides the DC electrical characteristics for the USB interface.
Table 47. USB DC Electrical Characteristics (CVDD = 3.3 V)
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2 V 1

Input low voltage VIL 0.8 V 1
Input current (CVIN = 0V or CVIN = CVDD) IIN 50 A 2
Output High voltage (CVDD = min, IOH = 2 mA) VOH 2.8 V
Output Low voltage (CVDD = min, IOL = 2 mA) VOL 0.3 V
Note:
1. Note that the min VILand max VIH values are based on the respective min and max CVIN values found in Table 3.
2. Note that the symbol CVIN represents the input voltage of the supply. It is referenced in Table 3.

Table 48. USB DC Electrical Characteristics (CVDD = 2.5 V)

Parameter Symbol Min Max Unit Notes

High-level input voltage1 VIH 1.7 V 1

Low-level input voltage VIL 0.7 V 1
Input current (VIN = 0 V or VIN = CVDD) IIN 40 A 2
High-level output voltage (CVDD = min, IOH = 1 mA) VOH 2.0 V 3
Low-level output voltage (CVDD = min, IOL = 1mA) VOL 0.4 V
Notes:
1. The min VILand max VIH values are based on the respective min and max CVIN values found in Table 3.
2. The symbol VIN, in this case, represents the CVIN symbol referenced in Section 2.1.2, Recommended Operating
Conditions.
3. Not applicable for open drain signals.

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Electrical Characteristics

Table 49. USB DC Electrical Characteristics (CVDD = 1.8V)

Parameter Symbol Min Max Unit Notes

High-level input voltage1 VIH 1.25 V 1

Low-level input voltage VIL 0.6 V 1
Input current (VIN = 0 V or VIN = CVDD) IIN 40 A 2
High-level output voltage (CVDD = min, IOH = 0.5 mA) VOH 1.35 V 3
Low-level output voltage (CVDD = min, IOL = 0.5 mA) VOL 0.4 V
Notes:
1. The min VILand max VIH values are based on the respective min and max CVIN values found in Table 3.
2. The symbol VIN, in this case, represents the CVIN symbol referenced in Section 2.1.2, Recommended Operating
Conditions.
3. Not applicable for open drain signals.

2.12.2 USB AC Electrical Specifications

This table describes the general timing parameters of the USB interface.
Table 50. USB General Timing Parameters
For recommended operating conditions, see Table 3

Parameter Symbol Min Max Unit Notes

USB clock cycle time tUSCK 15 ns 2, 3, 4, 5

Input setup to USB clockall inputs tUSIVKH 4 ns 2, 3, 4, 5
input hold to USB clockall inputs tUSIXKH 1 ns 2, 3, 4, 5
USB clock to output valid all outputs tUSKHOV 7 ns 2, 3, 4, 5
Output hold from USB clockall outputs tUSKHOX 2 ns 2, 3, 4, 5
Notes:
1. The symbols for timing specifications follow the pattern of t(First two letters of functional block)(signal)(state) (reference)(state) for inputs
and t(First two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tUSIXKH symbolizes USB timing (US)
for the input (I) to go invalid (X) with respect to the time the USB clock reference (K) goes high (H). Also, tUSKHOX
symbolizes USB timing (US) for the USB clock reference (K) to go high (H) with respect to the output (O) going invalid (X)
or output hold time.
2. All timings are in reference to USB clock.
3. All signals are measured from CVDD/2 of the rising edge of the USB clock to 0.4 CVDD of the signal in question for 3.3 V
signaling levels.
4. Input timings are measured at the pin.
5. For active/float timing measurements, the high impedance or off state is defined to be when the total current delivered
through the component pin is less than or equal to that of the leakage current specification.
6. When switching the data pins from outputs to inputs using the USBn_DIR pin, the output timings will be violated on that
cycle because the output buffers are tristated asynchronously. This should not be a problem, because the PHY should not
be functionally looking at these signals on that cycle as per ULPI specifications.

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 Electrical Characteristics

These figures provide the AC test load and signals for the USB, respectively.

Output Z0 = 50 CVDD/2
RL = 50

Figure 29. USB AC Test Load

USB_CLK/USB2_CLK/DR_CLK
tUSIXKH
tUSIVKH

Input Signals

tUSKHOV tUSKHOX
Output Signals:

Figure 30. USB Signals

This table provides the USB clock input (USB_CLK_IN) AC timing specifications.
Table 51. USB_CLK_IN AC Timing Specifications

Parameter Conditions Symbol Min Typ Max Unit

Frequency range Steady state fUSB_CLK_IN 59.97 60 60.03 MHz

Clock frequency tolerance tCLK_TOL 0.05 0 0.05 %
Reference clock duty cycle Measured at 1.6 V tCLK_DUTY 40 50 60 %
Total input jitter/time interval Peak-to-peak value measured with a tCLK_PJ 200 ps
error second order high-pass filter of 500 kHz
bandwidth

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Electrical Characteristics

2.13 Enhanced Local Bus

This section describes the DC and AC electrical specifications for the enhanced local bus interface.

2.13.1 Enhanced Local Bus DC Electrical Characteristics

This table provides the DC electrical characteristics for the enhanced local bus interface operating at BV DD = 3.3 V DC.
Table 52. Enhanced Local Bus DC Electrical Characteristics (3.3 V DC)
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit

Input high voltage VIH 2 V

Input low voltage VIL 0.8 V
Input current (VIN = 0 V or VIN = BVDD) IIN 50 A
Output high voltage (BVDD = min, IOH = 2 mA) VOH 2.4 V
Output low voltage (BVDD = min, IOL = 2 mA) VOL 0.4 V
Note:
1. The min VILand max VIH values are based on the respective min and max BVIN values found in Table 3.
2. The symbol VIN, in this case, represents the BVIN symbol referenced in Section 2.1.2, Recommended Operating
Conditions.

2.13.2 Enhanced Local Bus AC Electrical Specifications

2.13.2.1 Test Condition

This figure provides the AC test load for the enhanced local bus.

Output Z0 = 50 BV /2
DD
RL = 50

Figure 31. Enhanced Local Bus AC Test Load

2.13.2.2 Local Bus AC Timing Specifications for PLL Bypass Mode

All output signal timings are relative to the falling edge of any LCLKs for PLL bypass mode. The external circuit must use the
rising edge of the LCLKs to latch the data.
All input timings except LGTA/LUPWAIT/LFRB are relative to the rising edge of LCLKs. LGTA/LUPWAIT/LFRB are relative
to the falling edge of LCLKs.

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 Electrical Characteristics

This table describes the timing specifications of the local bus interface for PLL bypass mode.
Table 53. Enhanced Local Bus Timing Specifications (BVDD = 3.3 V)PLL Bypass Mode
For recommended operating conditions, see Table 3.

Parameter Symbol1 Min Max Unit Notes

Local bus cycle time tLBK 12 ns

Local bus duty cycle tLBKH/tLBK 45 55 %
LCLK[n] skew to LCLK[m] or tLBKSKEW 150 ps 2
LSYNC_OUT
Input setup tLBIVKH 6 ns
(except LGTA/LUPWAIT/LFRB)
Input hold tLBIXKH 1 ns
(except LGTA/LUPWAIT/LFRB)
Input setup tLBIVKL 6 ns
(for LGTA/LUPWAIT/LFRB)
Input hold tLBIXKL 1 ns
(for LGTA/LUPWAIT/LFRB)
Output delay tLBKLOV 1.5 ns
(Except LALE)
Output hold tLBKLOX 3.5 ns 5
(Except LALE)
Local bus clock to output high impedance tLBKLOZ 2 ns 3
for LAD/LDP
LALE output negation to LAD/LDP output tLBONOT 1/2 eLBC controller 4
transition (LATCH hold time) (LBCR[AHD]=1) clock cycle
1
(LBCR[AHD]=0)
Note:
1. All signals are measured from BVDD/2 of rising/falling edge of LCLK to BVDD/2 of the signal in question.
2. Skew measured between different LCLK signals at BVDD/2.
3. For purposes of active/float timing measurements, the high impedance or off state is defined to be when the total current
delivered through the component pin is less than or equal to the leakage current specification.
4. tLBONOT is a measurement of the minimum time between the negation of LALE and any change in LAD. tLBONOT is determined
by LBCR[AHD]. The unit is the eLBC controller clock cycle, which is the internal clock that runs the local bus controller, not
the external LCLK. LCLK cycle = eLBC controller clock cycle LCRR[CLKDIV]. After power on reset, LBCR[AHD] defaults to
0 and eLBC runs at maximum hold time.
5. Output hold is negative. This means that output transition happens earlier than the falling edge of LCLK.

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Electrical Characteristics

This figure shows the AC timing diagram for PLL bypass mode.

LCLK[m]
tLBIXKH
tLBIVKH
Input Signals
(Except LGTA/LUPWAIT/LFRB)
tLBIVKL

Input Signal
(LGTA/LUPWAIT/LFRB)
tLBIXKL
tLBKLOV tLBKLOX

Output Signals
(Except LALE)

LAD
(address phase)

tLBONOT

LALE

tLBKLOZ

LAD/LDP
(data phase)

Figure 32. Enhanced Local Bus Signals (PLL Bypass Mode)

This figure applies to all three controllers that eLBC supports: GPCM, UPM, and FCM.
For input signals, the AC timing data is used directly for all three controllers.
For output signals, each type of controller provides its own unique method to control the signal timing. The final signal delay
value for output signals is the programmed delay plus the AC timing delay. For example, for GPCM, LCS can be programmed
to delay by tacs (0, , , 1, 1 + , 1 + , 2, 3 cycles), so the final delay is tacs + tLBKLOV.

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 Electrical Characteristics

This figure shows how the AC timing diagram applies to GPCM in PLL bypass mode. The same principle applies to UPM and
FCM.

LCLK

taddr taddr

LAD[0:31] address read data address write data

tLBONOT tLBONOT

LALE

tarcs + tLBKLOV tawcs + tLBKLOV

LCS_B
tLBKLOX

LGPL2/LOE_B taoe + tLBKLOV

twen
trc tawe + tLBKLOV
LWE_B
toen
twc

LBCTL

read write

1
taddr is programmable and determined by LCRR[EADC] and ORx[EAD].
2 tarcs, tawcs, taoe, trc, toen, tawe, twc, twen are determined by ORx. See the P1025 reference manual.

Figure 33. GPCM Output Timing Diagram (PLL Bypass Mode)

2.14 Enhanced Secure Digital Host Controller (eSDHC)

This section describes the DC and AC electrical specifications for the eSDHC interface.

2.14.1 eSDHC DC Electrical Characteristics

This table provides the DC electrical characteristics for the eSDHC interface.
Table 54. eSDHC Interface DC Electrical Characteristics
At recommended operating conditions with CVDD = 3.3 V

Parameter Symbol Condition Min Max Unit Notes

Input high voltage VIH 0.625 CVDD V 1

Input low voltage VIL 0.25 CVDD V 1
Output high voltage VOH IOH = 100 uA at CVDD min 0.75 CVDD V
Output low voltage VOL IOL = 100uA at CVDDmin 0.125 CVDD V
Output high voltage VOH IOH = 100 uA CVDD 2 V 2
Output low voltage VOL IOL = 2 mA 0.3 V 2

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Electrical Characteristics

Table 54. eSDHC Interface DC Electrical Characteristics (continued)

At recommended operating conditions with CVDD = 3.3 V

Parameter Symbol Condition Min Max Unit Notes

Input/output leakage IIN/IOZ 50 50 uA

current
Note:
1. Note that the min VILand max VIH values are based on the respective min and max CVIN values found in Figure 3.
2. Open drain mode for MMC cards only.

2.14.2 eSDHC AC Timing Specifications

This table provides the eSDHC AC timing specifications as defined in Figure 35.
Table 55. eSDHC AC Timing Specifications
At recommended operating conditions with CVDD = 3.3 V

Parameter Symbol Min Max Unit Notes

SD_CLK clock frequency: fSFSCK MHz 2, 4

SD/SDIO Full-speed/High-speed mode 0 25/50
MMC Full-speed/High-speed mode 20/52
SD_CLK clock low timeFull-speed/High-speed mode tSFSCKL 10/7 ns 4
SD_CLK clock high timeFull-speed/High-speed mode tSFSCKH 10/7 ns 4
SD_CLK clock rise and fall times tSFSCKR/ 3 ns 4
tSFSCKF
Input setup times: SD_CMD, SD_DATx, SD_CD to SD_CLK tSFSIVKH 5.0 ns 4
Input hold times: SD_CMD, SD_DATx, SD_CD to SD_CLK tSFSIXKH 2.5 ns 3, 4
Output delay time: SD_CLK to SD_CMD, SD_DATx valid tSHSKHOV 3 3 ns 4
Note:
1. The symbols used for timing specifications herein follow the pattern of t(first three letters of functional block)(signal)(state)
(reference)(state) for inputs and t(first three letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tFHSKHOV
symbolizes eSDHC high speed mode device timing (SHS) clock reference (K) going to the high (H) state, with respect to
the output (O) reaching the invalid state (X) or output hold time. Note that, in general, the clock reference symbol
representation is based on five letters representing the clock of a particular functional. For rise and fall times, the latter
convention is used with the appropriate letter: R (rise) or F (fall).
2. In full speed mode, clock frequency value can be 025 MHz for a SD/SDIO card and 020 MHz for a MMC card. In high
speed mode, clock frequency value can be 050 MHz for a SD/SDIO card and 052 MHz for a MMC card.
3. To satisfy hold timing, the delay difference between clock input and cmd/data input must not exceed 2 ns.
4. CCARD 10 pF, (1 card), and CL = CBUS + CHOST + CCARD 40 pF

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 Electrical Characteristics

This figure provides the eSDHC clock input timing diagram.

eSDHC
VM VM VM
External Clock
operational mode t SHSCKL tSHSCKH

tSHSCK
t SH SC KR t SHSCKF
VM = Midpoint Voltage (OV DD/2)

Figure 34. eSDHC Clock Input Timing Diagram

This figure provides the data and command input/output timing diagram.

VM VM VM VM
SD_CK
External Clock
t SH SIVKH tSHSIXKH

SD_DAT/CMD
Inputs

SD_DAT/CMD
Outputs

tSHSKHOV

VM = Midpoint Voltage (OV /2)

DD

Figure 35. eSDHC Data and Command Input/Output Timing Diagram Referenced to Clock

2.15 Programmable Interrupt Controller (PIC) Specifications

This section describes the DC and AC electrical specifications for PIC.

2.15.1 PIC DC Electrical Characteristics

This table provides the DC electrical characteristics for the PIC interface.
Table 56. PIC DC Electrical Characteristics
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2 V 1

Input low voltage VIL 0.8 V 1
Input current (OVIN = 0V or OVIN = OVDD) IIN 50 A 2
Output high voltage (OVDD = min, IOH = 2 mA) VOH 2.4 V

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Electrical Characteristics

Table 56. PIC DC Electrical Characteristics (continued)

For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Output low voltage (OVDD = min, IOL = 2 mA) VOL 0.4 V

Note:
1. Note that the min VILand max VIH values are based on the respective min and max OVIN values found in Table 3.
2. Note that the symbol OVIN represents the input voltage of the supply. It is referenced in Table 3.

2.15.2 PIC AC Timing Specifications

This table provides the PIC input and output AC timing specifications.
Table 57. PIC Input AC Timing Specifications
For recommended operating conditions, see Table 3

Parameter Symbol Min Max Unit Notes

PIC inputsminimum pulse width tPIWID 3 SYSCLK 1

Note:
1. PIC inputs and outputs are asynchronous to any visible clock. PIC outputs should be synchronized before use by any
external synchronous logic. PIC inputs are required to be valid for at least tPIWID ns to ensure proper operation when working
in edge-triggered mode.

2.16 JTAG
This section describes the AC electrical specifications for the IEEE 1149.1 (JTAG) interface of the P1016.

2.16.1 JTAG DC Electrical Characteristics

This table provides the JTAG DC electrical characteristics.
Table 58. JTAG DC Electrical Characteristics
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2 V 1

Input low voltage VIL 0.8 V 1
Input current (OVIN = 0V or OVIN = OVDD) IIN 50 A 2
Output high voltage (OVDD = min, IOH = 2 mA) VOH 2.4 V
Output low voltage (OVDD = min, IOL = 2 mA) VOL 0.4 V
Note:
1. Note that the min VILand max VIH values are based on the respective min and max OVIN values found in Table 3.
2. Note that the symbol OVIN represents the input voltage of the supply. It is referenced in Table 3.

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2.16.2 JTAG AC Timing Specifications

This table provides the JTAG AC timing specifications as defined in Figure 36 through Figure 39.
Table 59. JTAG AC Timing Specifications
For recommended operating conditions see Table 3.

Parameter Symbol Min Max Unit Notes

JTAG external clock frequency of operation fJTG 0 33.3 MHz

JTAG external clock cycle time tJTG 30 ns
JTAG external clock pulse width measured at 1.4 V tJTKHKL 15 ns
JTAG external clock rise and fall times tJTGR and tJTGF 0 2 ns
TRST assert time tTRST 25 ns 2
Input setup times tJTDVKH 4 ns
Input hold times tJTDXKH 10 ns
Output valid times tJTKLDV 4 10 ns 3
Output hold times tJTKLDX 30 ns 3
Notes:
1. The symbols used for timing specifications follow the pattern t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tJTDVKH symbolizes JTAG
device timing (JT) with respect to the time data input signals (D) reaching the valid state (V) relative to the tJTG clock
reference (K) going to the high (H) state or setup time. Also, tJTDXKH symbolizes JTAG timing (JT) with respect to the time
data input signals (D) reaching the invalid state (X) relative to the tJTG clock reference (K) going to the high (H) state. Note
that in general, the clock reference symbol representation is based on three letters representing the clock of a SerDes
Transmitter particular functional. For rise and fall times, the latter convention is used with the appropriate letter: R (rise) or
F (fall).
2. TRST is an asynchronous level sensitive signal. The setup time is for test purposes only.
3. All outputs are measured from the midpoint voltage of the falling/rising edge of tTCLK to the midpoint of the signal in question.
The output timings are measured at the pins. All output timings assume a purely resistive 50- load. Time-of-flight delays
must be added for trace lengths, vias, and connectors in the system.

This figure provides the AC test load for TDO and the boundary-scan outputs.

Output Z0 = 50 OVDD/2
RL = 50

Figure 36. AC Test Load for the JTAG Interface

This figure provides the JTAG clock input timing diagram.

JTAG
VM VM VM
External Clock

tJTKHKL tJTGR
tJTG tJTGF

VM = Midpoint Voltage (OVDD/2)

Figure 37. JTAG Clock Input Timing Diagram

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Electrical Characteristics

This figure provides the TRST timing diagram.

TRST VM VM

tTRST

VM = Midpoint Voltage (OVDD/2)

Figure 38. TRST Timing Diagram

This figure provides the boundary-scan timing diagram.

JTAG
External Clock VM VM
tJTDVKH
tJTDXKH
Boundary Input
Data Inputs Data Valid
tJTKLDV
tJTKLDX
Boundary
Output Data Valid
Data Outputs

tJTKLDZ
Boundary
Output Data Valid
Data Outputs

VM = Midpoint Voltage (OVDD/2)

Figure 39. Boundary-Scan Timing Diagram

2.17 I2C
This section describes the DC and AC electrical characteristics for the I2C interfaces.

2.17.1 I2C DC Electrical Characteristics

This table provides the DC electrical characteristics for the I2C interfaces.
Table 60. I2C DC Electrical Characteristics
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2 V 1

Input low voltage VIL 0.8 V 1
Output low voltage VOL 0 0.4 V 2
Pulse width of spikes which must be suppressed by the input filter tI2KHKL 0 50 ns 3
Input current each I/O pin (input voltage is between 0.1 OVDD II 50 50 A 4
and 0.9 OVDD(max)

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Table 60. I2C DC Electrical Characteristics (continued)

For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Capacitance for each I/O pin CI 10 pF

Notes:
1. Note that the min VILand max VIH values are based on the respective min and max OVIN values found in Table 3.
2. Output voltage (open drain or open collector) condition = 3 mA sink current.
3. Refer to the P1025 QorIQ Integrated Processor Reference Manual for information on the digital filter used.
4. I/O pins will obstruct the SDA and SCL lines if OV DD is switched off.

2.17.2 I2C AC Electrical Specifications

This table provides the AC timing parameters for the I2C interfaces.
Table 61. I2C AC Electrical Specifications
For recommended operating conditions see Table 3. All values refer to V IH (min) and VIL (max) levels (see Table 60).

Parameter Symbol Min Max Unit Notes

SCL clock frequency fI2C 0 400 kHz 2

Low period of the SCL clock tI2CL 1.3 s
High period of the SCL clock tI2CH 0.6 s
Setup time for a repeated START condition tI2SVKH 0.6 s
Hold time (repeated) START condition (after this period, the first tI2SXKL 0.6 s
clock pulse is generated)
Data setup time tI2DVKH 100 ns
Data hold time: tI2DXKL s 3
CBUS compatible masters
I2C bus devices 0

Data output delay time tI2OVKL 0.9 s 4

Set-up time for STOP condition tI2PVKH 0.6 s
Bus free time between a STOP and START condition tI2KHDX 1.3 s
Noise margin at the LOW level for each connected device VNL 0.1 OVDD V
(including hysteresis)
Noise margin at the HIGH level for each connected device VNH 0.2 OVDD V
(including hysteresis)

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Electrical Characteristics

Table 61. I2C AC Electrical Specifications (continued)

For recommended operating conditions see Table 3. All values refer to V IH (min) and VIL (max) levels (see Table 60).

Parameter Symbol Min Max Unit Notes

Capacitive load for each bus line Cb 400 pF

Note:
1. The symbols used for timing specifications herein follow the pattern t(first two letters of functional block)(signal)(state)(reference)(state)
for inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tI2DVKH symbolizes I2C timing
(I2) with respect to the time data input signals (D) reaching the valid state (V) relative to the tI2C clock reference (K) going
to the high (H) state or setup time. Also, tI2SXKL symbolizes I2C timing (I2) for the time that the data with respect to the START
condition (S) went invalid (X) relative to the tI2C clock reference (K) going to the low (L) state or hold time. Also, tI2PVKH
symbolizes I2C timing (I2) for the time that the data with respect to the STOP condition (P) reaches the valid state (V) relative
to the tI2C clock reference (K) going to the high (H) state or setup time.
2. The requirements for I2C frequency calculation must be followed. Refer to Freescale application note AN2919, Determining
the I2C Frequency Divider Ratio for SCL.
3. As a transmitter, the processor provides a delay time of at least 300 ns for the SDA signal (referred to as the VIHmin of the
SCL signal) to bridge the undefined region of the falling edge of SCL to avoid unintended generation of a START or STOP
condition. When the processor acts as the I2C bus master while transmitting, it drives both SCL and SDA. As long as the
load on SCL and SDA are balanced, the device does not generate an unintended START or STOP condition. Therefore, the
300 ns SDA output delay time is not a concern. If under some rare condition, the 300 ns SDA output delay time is required
for the processor as transmitter, refer to AN2919, Determining the I2C Frequency Divider Ratio for SCL.
4. The maximum tI2OVKL only must be met if the device does not stretch the LOW period (tI2CL) of the SCL signal.

This figure provides the AC test load for the I2C.

Output Z0 = 50 OVDD/2
RL = 50

Figure 40. I2C AC Test Load

This figure shows the AC timing diagram for the I2C bus.

SDA
tI2CF tI2DVKH tI2KHKL tI2CF
tI2CL tI2SXKL tI2CR

SCL
tI2SXKL tI2CH tI2SVKH tI2PVKH
S tI2DXKL, tI2OVKL Sr P S

Figure 41. I2C Bus AC Timing Diagram

2.18 High-Speed Serial Interfaces (HSSI)

The P1016 features one Serializer/Deserializer (SerDes) interfaces to be used for high-speed serial interconnect applications.
The SerDes interface can be used for PCI Express data transfers and for SGMII application.
This section describes the common portion of SerDes DC electrical specifications, which is the DC requirement for SerDes
reference clocks. The SerDes data lanes transmitter and receiver reference circuits are also shown.

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 Electrical Characteristics

2.18.1 Signal Terms Definition

The SerDes utilizes differential signaling to transfer data across the serial link. This section defines terms used in the description
and specification of differential signals.
Figure 42 shows how the signals are defined. For illustration purpose, only one SerDes lane is used for description. The figure
shows a waveform for either a transmitter output (SDn_TX and SDn_TX) or a receiver input (SDn_RX and SDn_RX). Each
signal swings between A volts and B volts where A > B.
Using this waveform, the definitions are as follows. To simplify illustration, the following definitions assume that the SerDes
transmitter and receiver operate in a fully symmetrical differential signaling environment.
Single-Ended Swing
The transmitter output signals and the receiver input signals SDn_TX, SDn_TX, SDn_RX and SDn_RX each have a
peak-to-peak swing of A B volts. This is also referred as each signal wires Single-Ended Swing.
Differential Output Voltage, VOD (or Differential Output Swing):
The Differential Output Voltage (or Swing) of the transmitter, VOD, is defined as the difference of the two
complimentary output voltages: VSDn_TX VSDn_TX. The VOD value can be either positive or negative.
Differential Input Voltage, VID (or Differential Input Swing):
The Differential Input Voltage (or Swing) of the receiver, V ID, is defined as the difference of the two complimentary
input voltages: VSDn_RX V SDn_RX. The V ID value can be either positive or negative.
Differential Peak Voltage, VDIFFp
The peak value of the differential transmitter output signal or the differential receiver input signal is defined as
Differential Peak Voltage, V DIFFp = |A B| Volts.
Differential Peak-to-Peak, VDIFFp-p
Since the differential output signal of the transmitter and the differential input signal of the receiver each range from
A B to (A B) Volts, the peak-to-peak value of the differential transmitter output signal or the differential receiver
input signal is defined as Differential Peak-to-Peak Voltage, VDIFFp-p = 2 VDIFFp = 2 |(A B)| Volts, which is twice
of differential swing in amplitude, or twice of the differential peak. For example, the output differential peak-peak
voltage can also be calculated as VTX-DIFFp-p = 2 |VOD|.
Differential Waveform
The differential waveform is constructed by subtracting the inverting signal (SDn_TX, for example) from the
non-inverting signal (SDn_TX, for example) within a differential pair. There is only one signal trace curve in a
differential waveform. The voltage represented in the differential waveform is not referenced to ground. Refer to
Figure 42 as an example for differential waveform.
Common Mode Voltage, Vcm
The Common Mode Voltage is equal to one half of the sum of the voltages between each conductor of a balanced
interchange circuit and ground. In this example, for SerDes output, Vcm_out = (V SDn_TX + VSDn_TX)/2 = (A + B) /
2, which is the arithmetic mean of the two complimentary output voltages within a differential pair. In a system, the
common mode voltage may often differ from one components output to the others input. Sometimes, it may even be
different between the receiver input and driver output circuits within the same component. It is also referred to as the
DC offset occasionally.

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SDn_TX or
SDn_RX
A Volts

Vcm = (A + B) 2
SDn_TX or
SDn_RX
B Volts

Differential Swing, VID or VOD = A B

Differential Peak Voltage, VDIFFp = |A B|

Differential Peak-Peak Voltage, VDIFFpp = 2 VDIFFp (not shown)

Figure 42. Differential Voltage Definitions for Transmitter or Receiver

To illustrate these definitions using real values, consider the case of a CML (Current Mode Logic) transmitter that has a common
mode voltage of 2.25 V and each of its outputs, TD and TD, has a swing that goes between 2.5 V and 2.0 V. Using these values,
the peak-to-peak voltage swing of each signal (TD or TD) is 500 mV p-p, which is referred as the single-ended swing for each
signal. In this example, since the differential signaling environment is fully symmetrical, the transmitter outputs differential
swing (VOD) has the same amplitude as each signals single-ended swing. The differential output signal ranges between 500
mV and 500 mV, in other words, VOD is 500 mV in one phase and 500 mV in the other phase. The peak differential voltage
(VDIFFp) is 500 mV. The peak-to-peak differential voltage (V DIFFp-p) is 1000 mV p-p.

2.18.2 SerDes Reference Clocks

The SerDes reference clock inputs are applied to an internal PLL whose output creates the clock used by the corresponding
SerDes lanes. The SerDes reference clock inputs are SD_REF_CLK and SD_REF_CLK for PCI Express and SGMII interface.
The following sections describe the SerDes reference clock requirements and some application information.

2.18.2.1 SerDes Reference Clock Receiver Characteristics

This figure shows a receiver reference diagram of the SerDes reference clocks.

50

SDn_REF_CLK

Input
Amp
SDn_REF_CLK

50

Figure 43. Receiver of SerDes Reference Clocks

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 Electrical Characteristics

The characteristics of the clock signals are as follows:

The supply voltage requirements for XV DD_SRDS2 are specified in Table 2 and Table 3.
SerDes reference clock receiver reference circuit structure
The SD_REF_CLK and SD_REF_CLK are internally AC-coupled differential inputs as shown in Figure 43. Each
differential clock input (SD_REF_CLK or SD_REF_CLK) has a 50- termination to SGND_SRDS followed by
on-chip AC-coupling.
The external reference clock driver must be able to drive this termination.
The SerDes reference clock input can be either differential or single-ended. Refer to the differential mode and
single-ended mode descriptions in Section 2.18.2.2, DC Level Requirement for SerDes Reference Clocks, for
requirements.
The maximum average current requirement that also determines the common mode voltage range.
When the SerDes reference clock differential inputs are DC coupled externally with the clock driver chip, the
maximum average current allowed for each input pin is 8 mA. In this case, the exact common mode input voltage
is not critical as long as it is within the range allowed by the maximum average current of 8 mA (refer to the
following bullet for more detail), since the input is AC-coupled on-chip.
This current limitation sets the maximum common mode input voltage to be less than 0.4 V (0.4 V 50 = 8 mA)
while the minimum common mode input level is 0.1 V above SGND_SRDS. For example, a clock with a 50/50
duty cycle can be produced by a clock driver with output driven by its current source from 0 mA to 16 mA
(00.8 V), such that each phase of the differential input has a single-ended swing from 0 V to 800 mV with the
common mode voltage at 400 mV.
If the device driving the SD_REF_CLK and SD_REF_CLK inputs cannot drive 50 to SGND_SRDS DC, or it
exceeds the maximum input current limitations, then it must be AC-coupled off-chip.

2.18.2.2 DC Level Requirement for SerDes Reference Clocks

The DC level requirement for the SerDes reference clock inputs is different depending on the signaling mode used to connect
the clock driver chip and SerDes reference clock inputs as described below.
Differential Mode
The input amplitude of the differential clock must be between 400 mV and 1600 mV differential peak-peak (or
between 200 mV and 800 mV differential peak). In other words, each signal wire of the differential pair must have
a single-ended swing less than 800 mV and greater than 200 mV. This requirement is the same for both external
DC-coupled or AC-coupled connection.
For external DC-coupled connection, as described in Section 2.18.2.1, SerDes Reference Clock Receiver
Characteristics, the maximum average current requirements sets the requirement for average voltage (common
mode voltage) to be between 100 mV and 400 mV. Figure 44 shows the SerDes reference clock input requirement
for DC-coupled connection scheme.
For external AC-coupled connection, there is no common mode voltage requirement for the clock driver. Since
the external AC-coupling capacitor blocks the DC level, the clock driver and the SerDes reference clock receiver
operate in different command mode voltages. The SerDes reference clock receiver in this connection scheme has
its common mode voltage set to SGND_SRDS. Each signal wire of the differential inputs is allowed to swing
below and above the command mode voltage (SGND_SRDS). Figure 45 shows the SerDes reference clock input
requirement for AC-coupled connection scheme.

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Electrical Characteristics

200 mV < Input Amplitude or Differential Peak < 800 mV

SD_REF_CLK Vmax < 800 mV

100mV < Vcm < 400 mV

Vmin > 0 V
SD_REF_CLK

Figure 44. Differential Reference Clock Input DC Requirements (External DC-Coupled)

200 mV < Input Amplitude or Differential Peak < 800mV

SDn_REF_CLK
Vmax < Vcm + 400 mV

Vcm

SDn_REF_CLK Vmin > Vcm 400 mV

Figure 45. Differential Reference Clock Input DC Requirements (External AC-Coupled)

Single-ended Mode
The reference clock can also be single ended. The SD_REF_CLK input amplitude (single-ended swing) must be
between 400 mV and 800 mV peak-peak (from VMIN to VMAX) with SD_REF_CLK either left unconnected or
tied to ground.
The SD_REF_CLK input average voltage must be between 200 and 400 mV. Figure 46 shows the SerDes
reference clock input requirement for single-ended signaling mode.
To meet the input amplitude requirement, the reference clock inputs might need to be DC or AC coupled
externally. For the best noise performance, the reference of the clock could be DC or AC coupled into the unused
phase (SD_REF_CLK) through the same source impedance as the clock input (SD_REF_CLK) in use.

400 mV < SD_REF_CLK Input Amplitude < 800 mV

SD_REF_CLK

0V

SD_REF_CLK

Figure 46. Single-Ended Reference Clock Input DC Requirements

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2.18.2.3 AC Requirements for SerDes Reference Clocks

This table lists AC requirements for the PCI Express and SGMII SerDes reference clocks to be guaranteed by the customers
application design.
Table 62. SD_REF_CLK and SD_REF_CLK Input Clock Requirements

Parameter Symbol Min Typical Max Unit Notes

SD_REF_CLK/ SD_REF_CLK frequency range tCLK_REF 100/125 MHz 1

SD_REF_CLK/ SD_REF_CLK clock frequency tolerance tCLK_TOL 350 +350 ppm

SD_REF_CLK/ SD_REF_CLK reference clock duty cycle tCLK_DUTY 40 50 60 % 4

SD_REF_CLK/ SD_REF_CLK max deterministic tCLK_DJ 42 ps
peak-peak Jitter at 10-6 BER

SD_REF_CLK/ SD_REF_CLK total reference clock jitter tCLK_TJ 86 ps 2

at 10-6 BER (Peak-to-peak jitter at refClk input)

SD_REF_CLK/ SD_REF_CLK rising/falling edge rate tCLKRR/tCLKFR 1 4 V/ns 3

Notes:
1. Only 100/125 have been tested, other in between values will not work correctly with the rest of the system.
2. Limits from PCI Express CEM Rev 2.0.
3. Measured from 200 mV to +200 mV on the differential waveform (derived from SDn_REF_CLK minus SDn_REF_CLK).
The signal must be monotonic through the measurement region for rise and fall time. The 400 mV measurement window is
centered on the differential zero crossing. See Figure 47.
4. Measurement taken from differential waveform.
5. Measurement taken from single-ended waveform.
6. Matching applies to rising edge for SDn_REF_CLK and falling edge rate for SDn_REF_CLK. It is measured using a 200 mV
window centered on the median cross point where SDn_REF_CLK rising meets SDn_REF_CLK falling. The median cross
point is used to calculate the voltage thresholds that the oscilloscope uses for the edge rate calculations. The rise edge rate
of SDn_REF_CLK should be compared to the fall edge rate of SDn_REF_CLK, the maximum allowed difference should not
exceed 20% of the slowest edge rate. See Figure 48.

Rise Edge Rate Fall Edge Rate

VIH = +200 mV
0.0 V
VIL = 200 mV
SDn_REF_CLK
SDn_REF_CLK

Figure 47. Differential Measurement Points for Rise and Fall Time

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Electrical Characteristics

Figure 48. Single-Ended Measurement Points for Rise and Fall Time Matching

2.18.2.4 SerDes Transmitter and Receiver Reference Circuits

This figure shows the reference circuits for SerDes data lanes transmitter and receiver.

SD_TXn SD_RXn
50

50
Transmitter Receiver

50

SD_TXn SD_RXn 50

Figure 49. SerDes Transmitter and Receiver Reference Circuits

The DC and AC specification of SerDes data lanes are defined in each interface protocol section below (PCI Express, Serial
Rapid IO or SGMII) in this document based on the application usage:
Section 2.11.4, SGMII Interface Electrical Characteristics
Section 2.19, PCI Express
Note that an external AC-coupling capacitor is required for the above three serial transmission protocols per the protocols
standard requirements.

2.19 PCI Express

This section describes the DC and AC electrical specifications for the PCI Express bus.

2.19.1 PCI Express DC Requirements for PCI Express SD_REF_CLK and

SD_REF_CLK
For more information, see Section 2.18.2.2, DC Level Requirement for SerDes Reference Clocks.

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 Electrical Characteristics

2.19.2 PCI Express DC Physical Layer Specifications

This section contains the DC specifications for the physical layer of PCI Express on this device.

2.19.2.1 PCI Express DC Physical Layer Transmitter Specifications

This section discusses PCI Express DC physical layer transmitter specifications for 2.5 Gb/s.
This table defines the PCI Express (2.5 Gb/s) DC specifications for the differential output at all transmitters (TXs). The
parameters are specified at the component pins.
Table 63. PCI Express (2.5Gb/s) Differential Transmitter (TX) Output DC Specifications

Symbol Parameter Min Typical Max Units Comments

VTX-DIFFp-p Differential Peak-to-Peak 800 1000 1200 mV VTX-DIFFp-p = 2 |VTX-D+ VTX-D| See Note 1.
Output Voltage
VTX-DE-RATIO De-emphasized Differential 3.0 3.5 4.0 dB Ratio of the VTX-DIFFp-p of the second and follow-
Output Voltage (Ratio) ing bits after a transition divided by the
VTX-DIFFp-p of the first bit after a transition. See
Note 1.
ZTX-DIFF-DC DC Differential TX Imped- 80 100 120 TX DC Differential mode low Impedance
ance
ZTX-DC Transmitter DC Impedance 40 50 60 Required TX D+ as well as D DC impedance
during all states
Note:
1. Specified at the measurement point into a timing and voltage compliance test load as shown in Figure 50 and measured
over any 250 consecutive TX UIs.

2.19.2.2 PCI Express DC Physical Layer Receiver Specifications

This section discusses PCI Express DC physical layer receiver specifications for 2.5 Gb/s.

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Electrical Characteristics

This table defines the PCI Express (2.5 Gb/s) DC specifications for the differential output at all receivers (RXs). The parameters
are specified at the component pins.
Table 64. PCI Express (2.5 Gb/s) Differential Receiver (RX) Input DC Specifications

Symbol Parameter Min Typical Max Units Comments

VRX-DIFFp-p Differential Input 175 1200 mV VRX-DIFFp-p = 2 |VRX-D+ VRX-D|

Peak-to-Peak See Note 1.
Voltage
ZRX-DIFF-DC DC Differential 80 100 120 RX DC differential mode impedance. See
Input Impedance Note 2
ZRX-DC DC Input 40 50 60 Required RX D+ as well as D DC
Impedance impedance (50 20% tolerance). See
Notes 1 and 2.
ZRX-HIGH-IMP-DC Powered Down 50 k Required RX D+ as well as D DC
DC Input impedance when the receiver terminations
Impedance do not have power. See Note 3.
VRX-IDLE-DET-DIFFp-p Electrical Idle 65 175 mV VRX-IDLE-DET-DIFFp-p = 2 |VRX-D+ VRX-D|
Detect Threshold Measured at the package pins of the
receiver
Notes:
1. Specified at the measurement point and measured over any 250 consecutive UIs. The test load in Figure 50 should be used
as the RX device when taking measurements. If the clocks to the RX and TX are not derived from the same reference clock,
the TX UI recovered from 3500 consecutive UI must be used as a reference for the eye diagram.
2. Impedance during all LTSSM states. When transitioning from a fundamental reset to detect (the initial state of the LTSSM)
there is a 5 ms transition time before receiver termination values must be met on all unconfigured lanes of a port.
3. The RX DC common mode Impedance that exists when no power is present or fundamental reset is asserted. This helps
ensure that the Receiver Detect circuit will not falsely assume a receiver is powered on when it is not. This term must be
measured at 300 mV above the RX ground.

2.19.3 PCI Express AC Physical Layer Specifications

This section contains the DC specifications for the physical layer of PCI Express on this device.

2.19.3.1 PCI Express AC Physical Layer Transmitter Specifications

This section discusses the PCI Express AC physical layer transmitter specifications for 2.5Gb/s.
This table defines the PCI Express (2.5Gb/s) AC specifications for the differential output at all transmitters (TXs). The
parameters are specified at the component pins. The AC timing specifications do not include RefClk jitter.
Table 65. PCI Express (2.5Gb/s) Differential Transmitter (TX) Output AC Specifications

Symbol Parameter Min Typical Max Units Comments

UI Unit Interval 399.88 400.00 400.12 ps Each UI is 400 ps 300 ppm. UI does not account for
spread-spectrum-clock-dictated variations. See Note 1.
TTX-EYE Minimum TX 0.70 UI The maximum transmitter jitter can be derived as
Eye Width TTX-MAX-JITTER = 1 TTX-EYE= 0.3 UI.
See Notes 2 and 3.

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Table 65. PCI Express (2.5Gb/s) Differential Transmitter (TX) Output AC Specifications (continued)

Symbol Parameter Min Typical Max Units Comments

TTX-EYE-MEDIAN-to Maximum time 0.15 UI Jitter is defined as the measurement variation of the
- between the crossing points (VTX-DIFFp-p = 0 V) in relation to a
MAX-JITTER jitter median recovered TX UI. A recovered TX UI is calculated over
and maximum 3500 consecutive unit intervals of sample data. Jitter is
deviation from measured using all edges of the 250 consecutive UI in
the median. the center of the 3500 UI used for calculating the TX UI.
See Notes 2 and 3.
CTX AC Coupling 75 200 nF All transmitters shall be AC coupled. The AC coupling is
Capacitor required either within the media or within the transmitting
component itself. See Note 4.
Notes:
1. No test load is necessarily associated with this value.
2. Specified at the measurement point into a timing and voltage compliance test load as shown in Figure 50 and measured
over any 250 consecutive TX UIs.
3. A TTX-EYE = 0.70 UI provides for a total sum of deterministic and random jitter budget of TTX-JITTER-MAX = 0.30 UI for the
Transmitter collected over any 250 consecutive TX UIs. The TTX-EYE-MEDIAN-to-MAX-JITTER median is less than half of the
total TX jitter budget collected over any 250 consecutive TX UIs. It should be noted that the median is not the same as the
mean. The jitter median describes the point in time where the number of jitter points on either side is approximately equal
as opposed to the averaged time value.
4. SerDes transmitter does not have CTX built-in. An external AC-coupling capacitor is required.

2.19.3.2 PCI Express AC Physical Layer Receiver Specifications

This section discusses the PCI Express AC physical layer receiver specifications for 2.5 Gb/s.
This table defines the AC specifications for the PCI Express (2.5 Gb/s) differential input at all receivers (RXs). The parameters
are specified at the component pins. The AC timing specifications do not include RefClk jitter.
Table 66. PCI Express (2.5 Gb/s) Differential Receiver (RX) Input AC Specifications

Symbol Parameter Min Typical Max Units Comments

UI Unit Interval 399.88 400.00 400.12 ps Each UI is 400 ps 300 ppm. UI does not account
for Spread Spectrum Clock dictated variations.
See Note 1.
TRX-EYE Minimum 0.4 UI The maximum interconnect media and Transmit-
Receiver Eye ter jitter that can be tolerated by the Receiver can
Width be derived as TRX-MAX-JITTER = 1 TRX-EYE = 0.6
UI.
See Notes 2 and 3.

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Table 66. PCI Express (2.5 Gb/s) Differential Receiver (RX) Input AC Specifications (continued)

Symbol Parameter Min Typical Max Units Comments

TRX-EYE-MEDIAN-to- Maximum time 0.3 UI Jitter is defined as the measurement variation of

MAX-JITTER between the jitter the crossing points (VRX-DIFFp-p = 0 V) in relation
median and to a recovered TX UI. A recovered TX UI is calcu-
maximum devia- lated over 3500 consecutive unit intervals of sam-
tion from the ple data. Jitter is measured using all edges of the
median. 250 consecutive UI in the center of the 3500 UI
used for calculating the TX UI. See Notes 2, 3 and
4.
Notes:
1. No test load is necessarily associated with this value.
2. Specified at the measurement point and measured over any 250 consecutive UIs. The test load in Figure 50 should be used
as the RX device when taking measurements. If the clocks to the RX and TX are not derived from the same reference clock,
the TX UI recovered from 3500 consecutive UI must be used as a reference for the eye diagram.
3. A TRX-EYE = 0.40 UI provides for a total sum of 0.60 UI deterministic and random jitter budget for the Transmitter and
interconnect collected any 250 consecutive UIs. The TRX-EYE-MEDIAN-to-MAX-JITTER specification ensures a jitter
distribution in which the median and the maximum deviation from the median is less than half of the total. UI jitter budget
collected over any 250 consecutive TX UIs. It should be noted that the median is not the same as the mean. The jitter median
describes the point in time where the number of jitter points on either side is approximately equal as opposed to the
averaged time value. If the clocks to the RX and TX are not derived from the same reference clock, the TX UI recovered
from 3500 consecutive UI must be used as the reference for the eye diagram.
4. It is recommended that the recovered TX UI is calculated using all edges in the 3500 consecutive UI interval with a fit
algorithm using a minimization merit function. Least squares and median deviation fits have worked well with experimental
and simulated data.

2.19.3.3 Compliance Test and Measurement Load

The AC timing and voltage parameters must be verified at the measurement point, as specified within 0.2 inches of the package
pins, into a test/measurement load shown in this figure.

NOTE
The allowance of the measurement point to be within 0.2 inches of the package pins is
meant to acknowledge that package/board routing may benefit from D+ and D not being
exactly matched in length at the package pin boundary. If the vendor does not explicitly
state where the measurement point is located, the measurement point is assumed to be the
D+ and D package pins.

Figure 50. Compliance Test/Measurement Load

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3 QUICC Engine Block Specifications

3.1 Ethernet Interface
This section provides the AC and DC electrical characteristics for the Ethernet interfaces inside the QUICC Engine block.

3.1.1 MII and RMII DC Electrical Characteristics

This table shows the MII and RMII DC electrical characteristics
1

Table 67. MII and RMII DC Electrical Characteristics

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2.0 V 1

Input low voltage VIL 0.8 V
Input high current (VIN = BVDD) IIH 50 A 2
Input low current (VIN = GND) IIL 50 A 2
Output high voltage (BVDD = Min, IOH = 4.0 mA) VOH 2.4 BVDD + 0.3 V
Output low voltage (BVDD = Min, IOL = 4.0 mA) VOL GND 0.4 V
Note:
1. Note that the min VILand max VIH values are based on the respective min and max LVIN values found in Table 3.
2. The symbol VIN, in this case, represents the LVIN symbols referenced in Table 2 and Table 3.

3.1.2 MII AC Timing Specifications

This section describes the MII transmit and receive AC timing specifications.
This table provides the MII transmit AC timing specifications.
Table 68. MII Transmit AC Timing Specifications
For recommended operating conditions, see Table 3

Parameter/Condition Symbol Min Typ Max Unit

TX_CLK clock period 10 Mbps tMTX 399.96 400 400.04 ns

TX_CLK clock period 100 Mbps tMTX 39.996 40 40.004 ns
TX_CLK duty cycle tMTXH/tMTX 35 65 %
TX_CLK to MII data TXD[3:0], TX_ER, TX_EN delay tMTKHDX 1 15 ns
TX_CLK data clock rise (20%80%) tMTXR 1.0 4.0 ns
TX_CLK data clock fall (80%20%) tMTXF 1.0 4.0 ns

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This figure shows the MII transmit AC timing diagram.

tMTX tMTXR

TX_CLK

tMTXH tMTXF
TXD[3:0]
TX_EN
TX_ER
tMTKHDX

Figure 51. MII Transmit AC Timing Diagram

This table provides the MII receive AC timing specifications.

Table 69. MII Receive AC Timing Specifications
For recommended operating conditions, see Table 3.

Parameter/Condition Symbol Min Typ Max Unit

RX_CLK clock period 10 Mbps tMRX 399.96 400 400.04 ns

RX_CLK clock period 100 Mbps tMRX 39.996 40 40.004 ns
RX_CLK duty cycle tMRXH/tMRX 35 65 %
RXD[3:0], RX_DV, RX_ER setup time to RX_CLK tMRDVKH 10.0 ns
RXD[3:0], RX_DV, RX_ER hold time to RX_CLK tMRDXKH 10.0 ns
RX_CLK clock rise (20%80%) tMRXR 1.0 4.0 ns
RX_CLK clock fall time (80%20%) tMRXF 1.0 4.0 ns
Note: The frequency of RX_CLK should not exceed the frequency of TX_CLK by more than 300 ppm.

This figure shows the MII receive AC timing diagram.

tMRX tMRXR

RX_CLK

tMRXH tMRXF
RXD[3:0]
RX_DV Valid Data
RX_ER
tMRDVKH
tMRDXKL

Figure 52. MII Receive AC Timing Diagram

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This figure provides the MII AC test load.

Output Z0 = 50 LVDD/2
RL = 50

Figure 53. MII AC Test Load

3.1.3 RMII AC Timing Specifications

This section describes the RMII transmit and receive AC timing specifications.
The RMII transmit AC timing specifications listed are in this table.
Table 70. RMII Transmit AC Timing Specifications
For recommended operating conditions, see Table 3

Parameter Symbol Min Typ Max Unit

REF_CLK clock period tRMT 20.0 ns

REF_CLK duty cycle tRMTH 35 65 %
REF_CLK peak-to-peak jitter tRMTJ 250 ps
Rise time REF_CLK (20%80%) tRMTR 1.0 5.0 ns
Fall time REF_CLK (80%20%) tRMTF 1.0 5.0 ns
REF_CLK to RMII data TXD[1:0], TX_EN delay tRMTDX 2.0 10.0 ns

This figure shows the RMII transmit AC timing diagram.

tRMT tRMTR

REF_CLK

tRMTH tRMTF
TXD[1:0]
TX_EN
TX_ER
tRMTDX

Figure 54. RMII Transmit AC Timing Diagram

This table provides the MII receive AC timing specifications.

Table 71. RMII Receive AC Timing Specifications
For recommended operating conditions, see Table 3

Parameter Symbol Min Typ Max Unit

REF_CLK clock period tRMR 20.0 ns

REF_CLK duty cycle tRMRH 35 65 %
REF_CLK peak-to-peak jitter tRMRJ 250 ps
Rise time REF_CLK (20%80%) tRMRR 1.0 5.0 ns

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Table 71. RMII Receive AC Timing Specifications (continued)

For recommended operating conditions, see Table 3

Parameter Symbol Min Typ Max Unit

Fall time REF_CLK (80% 20%) tRMRF 1.0 5.0 ns

RXD[1:0], CRS_DV, RX_ER setup time to REF_CLK rising edge tRMRDVKH 4.0 ns
RXD[1:0], CRS_DV, RX_ER hold time to REF_CLK rising edge tRMRKHDX 2.0 ns

This figure shows the RMII receive AC timing diagram.

tRMR tRMRR

REF_CLK

tRMRH tRMRF
RXD[1:0]
CRS_DV Valid Data
RX_ER
tRMRDVKH
tRMRKHDX

Figure 55. RMII Receive AC Timing Diagram

This figure provides the AC test load.

Output Z0 = 50 LVDD/2
RL = 50

Figure 56. AC Test Load

3.2 HDLC, BISYNC, Transparent, and Synchronous UART Interfaces

This section describes the DC and AC electrical specifications for the high level data link control (HDLC), BISYNC,
transparent and synchronous UART.

3.2.1 HDLC, BISYNC, Transparent and Synchronous UART DC Electrical

Characteristics
This table provides the DC electrical characteristics for the HDLC, BISYNC, Transparent and Synchronous UART protocols.
Table 72. HDLC, BiSync, Transparent and Synchronous UART DC Electrical Characteristics
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2.0 V 1

Input low voltage VIL 0.8 V 1
Input current (BVIN = 0 V or BVIN = BVDD) IIN 50 A 2

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Table 72. HDLC, BiSync, Transparent and Synchronous UART DC Electrical Characteristics (continued)
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Output high voltage (BVDD = min, IOH = 2 mA) VOH 2.4 V

Output low voltage (BVDD = min, IOH = 2 mA) VOL 0.4 V
Note:
1. Note that the min VILand max VIH values are based on the respective min and max BVIN values found in Table 3.
2. Note that the symbol BVIN represents the input voltage of the supply. It is referenced in Table 3.

3.2.2 HDLC, BISYNC, Transparent and Synchronous UART AC Timing

Specifications
This table provides the input and output AC timing specifications for HDLC, BiSync, and Transparent and Synchronous UART
protocols.
Table 73. HDLC, BiSync, Transparent AC Timing Specifications
For recommended operating conditions, see Table 3.

Parameter Symbol1 Min Max Unit Notes

OutputsInternal clock delay tHIKHOV 0 5.5 ns 2

OutputsExternal clock delay tHEKHOV 1 8 ns 2
OutputsInternal clock High Impedance tHIKHOX 0 5.5 ns 2
OutputsExternal clock High Impedance tHEKHOX 1 8 ns 2
InputsInternal clock input setup time tHIIVKH 6 ns
InputsExternal clock input setup time tHEIVKH 4 ns
InputsInternal clock input Hold time tHIIXKH 0 ns
InputsExternal clock input hold time tHEIXKH 1 ns
Notes:
1. The symbols used for timing specifications follow the pattern t(first two letters of functional block)(signal)(state)(reference)(state) for inputs
and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tHIKHOX symbolizes the outputs internal
timing (HI) for the time tserial memory clock reference (K) goes from the high state (H) until outputs (O) are invalid (X).
2. Output specifications are measured from the 50% level of the rising edge of CLKIN to the 50% level of the signal. Timings
are measured at the pin.

This table provides the input and output AC timing specifications for the synchronous UART protocols.
Table 74. Synchronous UART AC Timing Specifications
For recommended operating conditions, see Table 3

Parameter Symbol 1 Min Max Unit Notes

OutputsInternal clock delay tHIKHOV 0 11 ns 2

OutputsExternal clock delay tHEKHOV 1 14 ns 2
OutputsInternal clock High Impedance tHIKHOX 0 11 ns 2

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Table 74. Synchronous UART AC Timing Specifications (continued)

For recommended operating conditions, see Table 3

Parameter Symbol 1 Min Max Unit Notes

OutputsExternal clock High Impedance tHEKHOX 1 14 ns 2

InputsInternal clock input setup time tHIIVKH 10 ns
InputsExternal clock input setup time tHEIVKH 8 ns
InputsInternal clock input Hold time tHIIXKH 0 ns
InputsExternal clock input hold time tHEIXKH 1 ns
Notes:
1. Output specifications are measured from the 50% level of the rising edge of CLKIN to the 50% level of the signal. Timings
are measured at the pin.
2. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tHIKHOX symbolizes the outputs
internal timing (HI) for the time tserial memory clock reference (K) goes from the high state (H) until outputs (O) are invalid (X).

This figure provides the AC test load.

Output Z0 = 50 OVDD/2
RL = 50

Figure 57. AC Test Load

These figures represent the AC timing from Table 73 and Table 74. Note that although the specifications generally reference
the rising edge of the clock, these AC timing diagrams also apply when the falling edge is the active edge. This figure shows
the timing with external clock.

Serial CLK (input)

tHEIXKH
tHEIVKH
Input Signals:

(See Note)
tHEKHOV
Output Signals:

(See Note)

tHEKHOX
Note: The clock edge is selectable
Figure 58. AC Timing (External Clock) Diagram

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This figure shows the timing with internal clock.

Serial CLK (output)

tHIIXKH
tHIIVKH
Input Signals:

(See Note)
tHIKHOV
Output Signals:

(See Note)
tHIKHOX

Note: The clock edge is selectable

Figure 59. AC Timing (Internal Clock) Diagram

3.3 TDM/SI
This section describes the DC and AC electrical specifications for the time-division-multiplexed and serial interface (TDM/SI).

3.3.1 TDM/SI DC Electrical Characteristics

This table provides the TDM/SI DC electrical characteristics.
Table 75. TDM/SI DC Electrical Characteristics
For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2.0 V 1

Input low voltage VIL 0.8 V 1
Input current (BVIN = 0 V or BVIN = BVDD) IIN 50 A 2
Output high voltage (BVDD = min, IOH = 2 mA) VOH 2.4 V
Output low voltage (BVDD = min, IOH = 2 mA) VOL 0.4 V
Note:
1. Note that the min VILand max VIH values are based on the respective min and max BVIN values found in Table 3.
2. Note that the symbol BVIN represents the input voltage of the supply. It is referenced in Table 3.

3.3.2 TDM/SI AC Timing Specifications

This table provides the TDM/SI input and output AC timing specifications.
Table 76. TDM/SI AC Timing Specifications 1

Parameter Symbol 2 Min Max Unit

TDM/SI outputsExternal clock delay tSEKHOV 2 11 ns

TDM/SI outputsExternal clock High Impedance tSEKHOX 2 10 ns
TDM/SI inputsExternal clock input setup time tSEIVKH 5 ns

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Table 76. TDM/SI AC Timing Specifications 1

Parameter Symbol 2 Min Max Unit

TDM/SI inputsExternal clock input hold time tSEIXKH 2 ns

Notes:
1. Output specifications are measured from the 50% level of the rising edge of CLKIN to the 50% level of the signal. Timings are
measured at the pin.
2. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tSEKHOX symbolizes the TDM/SI
outputs external timing (SE) for the time tTDM/SI memory clock reference (K) goes from the high state (H) until outputs (O) are
invalid (X).

This figure provides the AC test load for the TDM/SI.

Output Z0 = 50 OVDD/2
RL = 50

Figure 60. TDM/SI AC Test Load

This figure represents the AC timing from Table 76. Note that although the specifications generally reference the rising edge of
the clock, these AC timing diagrams also apply when the falling edge is the active edge. This figure shows the TDM/SI timing
with external clock.

TDM/SICLK (input)
tSEIXKH
tSEIVKH
Input Signals:
TDM/SI
(See Note)
tSEKHOV
Output Signals:
TDM/SI
(See Note)

tSEKHOX
Note: The clock edge is selectable on TDM/SI
Figure 61. TDM/SI AC Timing (External Clock) Diagram

3.4 UTOPIA Interface

This section describes the DC and AC electrical specifications for the UTOPIA.

3.4.1 UTOPIA DC Electrical Characteristics

This table provides the DC electrical characteristics for the UTOPIA.

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Table 77. UTOPIA DC Electrical Characteristics

For recommended operating conditions, see Table 3.

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2.0 V 1

Input low voltage VIL 0.8 V 1
Input current (BVIN = 0 V or BVIN = BVDD) IIN 50 A 2
Output high voltage (BVDD = min, IOH = 2 mA) VOH 2.4 V
Output low voltage (BVDD = min, IOH = 2 mA) VOL 0.4 V
Note:
1. Note that the min VILand max VIH values are based on the respective min and max BVIN values found in Table 3.
2. Note that the symbol BVIN represents the input voltage of the supply. It is referenced in Table 3.

3.4.2 UTOPIA AC Timing Specifications

This table provides the UTOPIA input and output AC timing specifications.
Table 78. UTOPIA AC Timing Specifications1

Parameter Symbol 2 Min Max Unit

UTOPIA/POS outputsInternal clock delay tUIKHOV 0 8 ns

UTOPIA/POS outputsExternal clock delay tUEKHOV 1 10 ns
UTOPIA/POS outputsInternal clock High Impedance tUIKHOX 0 8 ns
UTOPIA/POS outputsExternal clock High Impedance tUEKHOX 1 10 ns
UTOPIA/POS inputsInternal clock input setup time tUIIVKH 6 ns
UTOPIA/POS inputsExternal clock input setup time tUEIVKH 4 ns
UTOPIA/POS inputsInternal clock input Hold time tUIIXKH 0 ns
UTOPIA/POS inputsExternal clock input hold time tUEIXKH 1 ns
Notes:
1. Output specifications are measured from the 50% level of the rising edge of CLKIN to the 50% level of the signal. Timings
are measured at the pin.
2. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tUIKHOX symbolizes the
UTOPIA/POS outputs internal timing (UI) for the time tUtopia memory clock reference (K) goes from the high state (H) until
outputs (O) are invalid (X).

This figure provides the AC test load for the UTOPIA.

Output Z0 = 50 OVDD/2
RL = 50

Figure 62. UTOPIA AC Test Load

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These figures represent the AC timing from Table 78. Note that although the specifications generally reference the rising edge
of the clock, these AC timing diagrams also apply when the falling edge is the active edge.
This figure shows the UTOPIA timing with external clock.

UTOPIACLK (input)
tUEIXKH
tUEIVKH
Input Signals:
UTOPIA

tUEKHOV
Output Signals:
UTOPIA

tUEKHOX

Figure 63. UTOPIA AC Timing (External Clock) Diagram

This figure shows the UTOPIA timing with internal clock.

UTOPIACLK (output)
tUIIXKH
tUIIVKH
Input Signals:
UTOPIA

tUIKHOV
Output Signals:
UTOPIA

tUIKHOX

Figure 64. UTOPIA AC Timing (Internal Clock) Diagram

3.5 SPI Interface

This section describes the SPI DC and AC electrical specifications.

3.5.1 SPI DC Electrical Characteristics

This table provides the SPI DC electrical characteristics.
Table 79. SPI DC Electrical Characteristics
For recommended operating conditions, see Table 3

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2.0 V 1

Input low voltage VIL 0.8 V 1

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Table 79. SPI DC Electrical Characteristics (continued)

For recommended operating conditions, see Table 3

Parameter Symbol Min Max Unit Notes

Input current (OVIN = 0 V or OVIN = OVDD) IIN 50 A 2

Output high voltage (OVDD = min, IOH = 2 mA) VOH 2.4 V
Output low voltage (OVDD = min, IOH = 2 mA) VOL 0.4 V
Note:
1. The min VILand max VIH values are based on the respective min and max OVIN values found in Table 3.
2. The symbol OVIN represents the input voltage of the supply. It is referenced in Table 3.

3.5.2 SPI AC Timing Specifications

This table and provide the SPI input and output AC timing specifications.
Table 80. SPI AC Timing Specifications
For recommended operating conditions, see Table 3.

Parameter Symbol1 Min Max Unit Note

SPI outputs validMaster mode (internal clock) delay tNIKHOV 6 ns 2

SPI outputs holdMaster mode (internal clock) delay tNIKHOX 0.5 ns 2
SPI outputs validSlave mode (external clock) delay tNEKHOV 9 ns 2
SPI outputs holdSlave mode (external clock) delay tNEKHOX 2 ns 2
SPI inputsMaster mode (internal clock) input setup time tNIIVKH 4 ns
SPI inputsMaster mode (internal clock) input hold time tNIIXKH 0 ns
SPI inputsSlave mode (external clock) input setup time tNEIVKH 4 ns
SPI inputsSlave mode (external clock) input hold time tNEIXKH 2 ns
Note:
1 The symbols used for timing specifications follow the pattern of t
(first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tNIKHOX symbolizes the internal
timing (NI) for the time SPICLK clock reference (K) goes to the high state (H) until outputs (O) are invalid (X).
2. Output specifications are measured from the 50% level of the rising edge of CLKIN to the 50% level of the signal. Timings are
measured at the pin.

This figure provides the AC test load for the SPI.

Output Z0 = 50 OVDD/2
RL = 50

Figure 65. SPI AC Test Load

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These figures represent the AC timing from Table 27. Note that although the specifications generally reference the rising edge
of the clock, these AC timing diagrams also apply when the falling edge is the active edge.
This figure shows the SPI timing in slave mode (external clock).

SPICLK (output)
tNEIXKH
tNEIVKH
Input Signals:
SPIMISO
(See Note) tNEKHOX
tNEKHOV
Output Signals:
SPIMOSI
(See Note)
Note: The clock edge is selectable on SPI.

Figure 66. SPI AC Timing in Slave Mode (External Clock) Diagram

This figure shows the SPI timing in master mode (internal clock).

SPICLK (output)
tNIIXKH
tNIIVKH
Input Signals:
SPIMISO
(See Note) tNIKHOX
tNIKHOV
Output Signals:
SPIMOSI
(See Note)
Note: The clock edge is selectable on SPI.

Figure 67. SPI AC Timing in Master Mode (Internal Clock) Diagram

3.6 GPIO
This section describes the DC and AC electrical characteristics for the GPIO interface.

3.6.1 GPIO DC Electrical Characteristics

This table provides the DC electrical characteristics for the GPIO interface when operating from a 3.3 V supply.
Table 81. GPIO DC Electrical Characteristics (3.3 V)
For recommended operating conditions, see Table 3

Parameter Symbol Min Max Unit Notes

Input high voltage VIH 2 V 1

Input low voltage VIL 0.8 V 1

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Table 81. GPIO DC Electrical Characteristics (3.3 V) (continued)

For recommended operating conditions, see Table 3

Parameter Symbol Min Max Unit Notes

Input current (OVIN = 0 V or OVIN = OVDD) IIN 50 A 2

Output high voltage (OVDD = min, IOH = 2 mA) VOH 2.4 V
Output low voltage (OVDD = min, IOL = 2 mA) VOL 0.4 V
Note:
1. The min VILand max VIH values are based on the min and max OVIN respective values found in Table 3.
2. The symbol OVIN represents the input voltage of the supply. It is referenced in Table 3.

3.6.2 GPIO AC Timing Specifications

This table provides the GPIO input and output AC timing specifications.
Table 82. GPIO Input AC Timing Specifications
For recommended operating conditions, see Table 3

Parameter Symbol Min Unit Notes

GPIO inputsminimum pulse width tPIWID 20 ns 1

Notes:
1. GPIO inputs and outputs are asynchronous to any visible clock. GPIO outputs should be synchronized before use by any
external synchronous logic. GPIO inputs are required to be valid for at least tPIWID to ensure proper operation.

This figure provides the AC test load for the GPIO.

Output Z0 = 50 OVDD/2
RL = 50

Figure 68. GPIO AC Test Load

4 Thermal
This section describes the thermal specifications.

4.1 Thermal Characteristics

This table provides the package thermal characteristics.
Table 83. Package Thermal Characteristics

Parameter JEDEC Board Symbol Value Unit Notes

Junction-to-ambient Natural Convection Single layer board (1s) RJA 30 C/W 1, 2

Junction-to-ambient Natural Convection Four layer board (2s2p) RJA 21 C/W 1, 2
Junction-to-ambient (at 200 ft/min) Single layer board (1s) RJA 24 C/W 1, 2
Junction-to-ambient (at 200 ft/min) Four layer board (2s2p) RJA 17 C/W 1, 2
Junction-to-board thermal RJB 12 C/W 3

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Table 83. Package Thermal Characteristics

Parameter JEDEC Board Symbol Value Unit Notes

Junction-to-case thermal RJC 9 C/W 4

Junction-to-package top thermal Natural Convection JT 2 C/W 5
Notes
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
2. Per JEDEC JESD51-2 and JESD51-6 with the board (JESD51-9) horizontal.
3. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured
on the top surface of the board near the package.
4. Junction-to-case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is
used for the case temperature. Reported value includes the thermal resistance of the interface layer.
5. Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
as Psi-JT.

4.2 Temperature Diode

The device have a thermal diode on the microprocessor that can be used in conjunction with other system temperature
monitoring devices (such as On Semiconductor, NCT1008). These devices use the negative temperature coefficient of a diode
operated at a constant current to determine the temperature of the microprocessor and its environment.
The following are the specifications of the P1016 on-board temperature diode:
Operating range: 10 230 A
Ideality factor over 13.5 220 A; n = 1.006 0.008

5 Package Information
This section provides the package parameters and ordering information.

5.1 Package Parameters for the P1016 WB-TePBGA

The package parameters are provided in the following list. The package type is 23 mm 23 mm, 561 plastic ball grid array
(WB-TePBGA).
Package outline 23 mm 23mm
Interconnects 561
Pitch 0.8 mm
Module height 1.79 mm to 2.3mm (Maximum)
Solder Balls 3.5% Ag, 96.5% Sn
Ball diameter (typical) 0.45 mm

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

102 Freescale Semiconductor
 Package Information

This figure shows the P1016 package.

Notes:
1. All dimensions are in millimeters.
2. Dimensioning and tolerancing per ASME Y14. 5M-1994.
3. Maximum solder ball diameter measured parallel to Datum A.
4. Datum A, the seating plane, is determined by the spherical crowns of the solder balls.
5. Parallelism measurement shall exclude any effect of mark on top surface of package.

Figure 69. P1016 Package

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 103
Product Documentation

5.2 Ordering Information

This table provides the Freescale part numbering nomenclature. Each part number also contains a revision code which refers to
the die mask revision number.
Table 84. Part Numbering Nomenclature

P 1 02 or 01 6 q t e n dd r

Die
Generat Number of Deriva Temperature Encryptio Package CPU/CCB/DDR
Platform Qual Status Revisio
ion Cores tive Range n Type Frequency (MHz)
n

P= 1 01 = Single 0-9 P= S = Std Temp E = SEC 5= A = 1.0

45 nm Core Prototype X = Ext. Temp Present TePBGA FF = 667/333/667 B = 1.1
02 = Dual N = Quald to N = SEC Pbfree DF = 533/267/667
Core Industrial Not
Tier Present
S = Special
Notes:
1. See Section 5, Package Information, for more information on available package types.
2. Processor core frequencies supported by parts addressed by this specification only. Not all parts described in this
specification support all core frequencies. Additionally, parts addressed by part number specifications may support other
maximum core frequencies.The QUICC Engine RISC clock speed is equal to the CCB/Platform speed.

Parts are marked as the example shown in this figure.

P1020xtenddr
Core/DDR MHz
ATWLYYWW
CCCCC

*MMMMM YWWLAZ

WB-TePBGA
Notes:
P1020xtenddr is the orderable part number
*MMMMM is the mask number
YWWLAZ is the assembly traceability code.
CCCCC is the country code
ATWLYYWW is the standard assembly, test, year, and work week codes.

Figure 70. Part Marking for WB-TePBGA Device

6 Product Documentation
The following documents are required for a complete description of the device and are needed to design properly with the part:
P1025 QorIQ Integrated Processor Reference Manual (document number P1025RM)
e500 PowerPC Core Reference Manual (E500CORERM)
QUICC Engine Block Reference Manual (QEIWRM)

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

104 Freescale Semiconductor
 Revision History

7 Revision History
This table provides revision history for this document.
s ts

Table 85. Document Revision History

Rev.
Date Substantive Change(s)
Number

4 03/2012 In Table 1, replaced the signals NC107, NC108, and NC109 (along with their details, such as
Package Pin Number, Pin Type, and Power Supply) with the signals CKSTP_IN1_B,
CKSTP_OUT1_B, and READY_P1 respectively.
Changed the power supply from XVDD_SRDS to SVDD_SRDS for all SD_RX_n pins as well as
SD_REF_CLK and SD_REF_CLK_B in Table 1.
Changed Note 13 in Table 1. The note says "These pins must NOT be pulled down by a resistor or
the component they are connected to during power-on reset".
Added IRQ06 with CE_PB10 in Table 1.
Added Table 17.
In Table 27, made the following changes:
Changed the min value of SPI outputsMaster data (internal clock) hold time from 0.5 to the
formula: 0.5+(tPLATFORM_CLK *SPMODE [HO_ADJ]).
Changed the max value of SPI outputsMaster data (internal clock) delay from 6.0 to the
formula: 0.5+(tPLATFORM_CLK *SPMODE [HO_ADJ]).
Added note 3 that reads: See the P1025 QorIQ Integrated Processor Reference Manual for detail
about the register SPMODE.
In Table 38, changed LSTS = 0 to LSTS = 001 and changed LSTS = 1 to LSTS = 100
In Table 38, changed note 4 to The LSTS shown in the table refers to the EIC2[0:2] or EIC3[0:2]
bit field of the GUTS_SRDSCR4 register, depending on the SerDes lane usage
Modified Figure 21.
Changed value of minimum AC coupling capacitor from 5nF to 10nF and removed typical value of
100nF in Table 39.
Changed min frequency of DRCLK from 66.7Mhz to 66.66MHz.
Changed pin D12 from NC25 to THERM1 (Internal Diode Anode) and pin E12 from NC26 to
THERM0 (Internal Diode Cathode) and added Note 26 in Table 1. Also added THERM0 and
THERM1 in ball map.
Added Section 4.2, Temperature Diode.
Updated Figure 14.
Removed "Measured at 1.6 V" from "SD_REF_CLK/ SD_REF_CLK reference clock duty cycle" cell
of Table 62.
Replaced Figure 69 by new higher resolution drawing.
In Table 46, changed min value of tT1588CLK from 3.8 to 5.
Added Section 2.11.6.1, eTSEC IEEE Std 1588 DC Electrical Characteristics.
Changed input leakage current of all interfaces to +-50uA.
3.1 01/2012 Changed Package Type from 2 to 5 in Table 84
3 08/2011 Initial release

P1016 QorIQ Integrated Processor Hardware Specifications, Rev. 4

Freescale Semiconductor 105
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Document Number: P1016EC

Rev. 4
03/2012