1MBI300N-120 IGBT Module
1200V / 300A 1 in one-package
Features
High speed switching
Voltage drive
Low inductance module structure
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Equivalent Circuit Schematic
Item Symbol Rating Unit
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltaga VGES 20 V
Collector Continuous IC A E
300 C
current 1ms IC pulse 600 A
Continuous -IC 300 A
1ms -IC pulse 600 A
Max. power dissipation PC 2100 W
Operating temperature Tj +150 C
G E
Storage temperature Tstg -40 to +125 C Current control circuit
Isolation voltage Vis AC 2500 (1min.) V
Screw torque Mounting *1 3.5 Nm
Terminals *2 4.5 Nm
Terminals *3 1.7 Nm
*1 : Recommendable value : 2.5 to 3.5 Nm(M5) or (M6)
*2 : Recommendable value : 3.5 to 4.5 Nm(M6)
*3 : Recommendable value : 1.3 to 1.7 Nm(M4)
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES 4.0 VGE=0V, VCE=1200V mA
Gate-Emitter leakage current IGES 60 VCE=0V, VGE=20V A
Gate-Emitter threshold voltage VGE(th) 4.5 7.5 VCE=20V, IC=300mA V
Collector-Emitter saturation voltage VCE(sat) 3.3 VGE=15V, IC=300A V
Input capacitance Cies 48000 VGE=0V pF
Output capacitance Coes 17400 VCE=10V
Reverse transfer capacitance Cres 15480 f=1MHz
Turn-on time ton 0.65 1.2 VCC=600V s
tr 0.25 0.6 IC=300A
Turn-off time toff 0.95 1.5 VGE=15V
tf 0.35 0.5 RG=2.7 ohm
Diode forward on voltage VF 3.0 IF=300A, VGE=0V V
Reverse recovery time trr 0.35 IF=300A s
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance Rth(j-c) 0.06 IGBT C/W
Rth(j-c) 0.17 Diode C/W
Rth(c-f)*4 0.0125 the base to cooling fin C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound
1MBI300N-120 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25C Tj=125C
600 600
Collector current : Ic [A]
Collector current : Ic [A]
400 400
200 200
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage
Tj=25C Tj=125C
10 10
VCE [V]
VCE [V]
8 8
Collector-Emitter voltage :
Collector-Emitter voltage :
6 6
4 4
2 2
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Switching time vs. Collector current
Vcc=600V, RG=2.7 ohm, VGE=15V, Tj=25C Vcc=600V, RG=2.7 ohm, VGE=15V, Tj=125C
1000 1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
100 100
10 10
0 200 400 600 0 200 400 600
Collector current : Ic [A] Collector current : Ic [A]
1MBI300N-120 IGBT Module
Switching time vs. RG Dynamic input characteristics
Vcc=600V, Ic=300A, VGE=15V, Tj=25C Tj=25C
1000 25
Switching time : ton, tr, toff, tf [n sec.]
800
Collector-Emitter voltage : VCE [V]
20
Gate-Emitter voltage : VGE [V]
1000
600 15
400 10
200 5
100
0 0
1 3 5 10 0 500 1000 1500 2000 2500 3000 3500 4000
Gate resistance : RG [ohm] Gate charge : Qg [nC]
Forward current vs. Forward voltage Reverse recovery characteristics
VGE=0V trr, Irr, vs. IF
600
Reverse recovery time : trr [n sec.]
Reverse recovery current : Irr [A]
(Forward current : IF [A] )
Collector current : -Ic [A]
400
100
200
0
0 1 2 3 4 5 0 200 400 600
Emitter-Collector voltage VECD [V] Forward current : IF [A]
(Forward voltage : VF [V])
Switching loss vs. Collector current Reversed biased safe operating area
< 15V, Tj <
+VGE=15V, -VGE = = 125C, RG >
= 2.7 ohm
Vcc=600V, RG=2.7 ohm, VGE=15V
125 3000
Switching loss : Eon, Eoff, Err [mJ/cycle]
2500
100
Collector current : Ic [A]
2000
75
1500
50
1000
25
500
0 0
0 100 200 300 400 500 600 0 200 400 600 800 1000 1200
Collector current : Ic [A] Collector-Emitter voltage : VCE [V]
1MBI300N-120 IGBT Module
Capacitance vs. Collector-Emitter voltage
Transient thermal resistance Tj=25C
100
Capacitance : Cies, Coes, Cres [nF]
Thermal resistance : R th (j-c) [C/W]
0.1
10
0.01
0.001
0.001 0.01 0.1 1 0 5 10 15 20 25 30 35
Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]
Outline Drawings, mm
mass : 380g
