2MBI150UB-120

IGBT Module U-Series 1200V / 150A 2 in one-package

Features Applications Equivalent Circuit Schematic

· High speed switching · Inverter for Motor drive
· Voltage drive · AC and DC Servo drive amplifier C1 E2

· Low inductance module structure · Uninterruptible power supply

· Industrial machines, such as Welding machines C2E1

G1 E1 G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol Conditions Rating Unit
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltaga VGES ±20 V
Collector current IC Continuous Tc=25°C 200 A
Tc=80°C 150
ICp 1ms Tc=25°C 400
Tc=80°C 300
-IC 150
-IC pulse 300
Collector Power Dissipation PC 1 device 780 W
Junction temperature Tj +150 °C
Storage temperature Tstg -40 to +125
Isolation voltage between terminal and copper base *1 Viso AC:1min. 2500 VAC
Screw Torque Mounting *2 3.5 N·m
Terminals *2 3.5
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5)

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item Symbols Conditions Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current ICES VGE=0V, VCE=1200V – – 2.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V – – 400 nA
Gate-Emitter threshold voltage VGE(th) VCE=20V, IC=150mA 4.5 6.5 8.5 V
Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=150A Tj=25°C – 1.90 2.25 V
(terminal) Tj=125°C – 2.15 –
VCE(sat) Tj=25°C – 1.75 2.10
(chip) Tj=125°C – 2.00 –
Input capacitance Cies VCE=10V, VGE=0V, f=1MHz – 17 – nF
Turn-on time ton VCC =600V – 0.36 1.20 µs
tr IC=150A – 0.21 0.60
tr(i) VGE=±15V – 0.03 –
Turn-off time toff RG=4.7 Ω – 0.37 1.00
tf – 0.07 0.30
Forward on voltage VF VGE=0V Tj=25°C – 1.75 2.05 V
(terminal) IF=150A Tj=125°C – 1.85 –
VF Tj=25°C – 1.60 1.90
(chip) Tj=125°C – 1.70 –
Reverse recovery time t rr IF=150A – – 0.35 µs
Lead resistance, terminal-chip*3 R lead – 0.97 – mΩ
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items Symbols Conditions Characteristics Unit
Min. Typ. Max.
Thermal resistance Rth(j-c) IGBT – – 0.16 °C/W
Rth(j-c) FWD – – 0.24 °C/W
Contact Thermal resistance Rth(c-f)*4 With thermal compound – 0.025 – °C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
2MBI150UB-120 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 125°C / chip

400 400

VGE=20V 15V 12V VGE=20V 15V 12V

300 300
Collector current : Ic [A]

Collector current : Ic [A]

200 200
10V 10V

100 100

8V
8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip

400 10
Collector - Emitter voltage : VCE [ V ]

T j=25°C T j=125°C 8
300
Collector current : Ic [A]

200

100 Ic=300A
2
Ic=150A
Ic=75A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ]

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

VGE=0V, f= 1M Hz, Tj= 25°C Vcc=600V, Ic=150A, Tj= 25°C
100.0
[ 5V/div ]
Collector-Emitter voltage : VCE [ 200V/div ]
Capacitance : Cies, Coes, Cres [ nF ]

Cies

10.0 VGE
Gate - Emitter voltage : VGE

Cres

1.0
Coes

VCE
0.1
0 10 20 30 0 300 600 900

Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ]

2MBI150UB-120 IGBT Module

Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj= 25°C Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj=125°C
10000 10000
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

1000 1000
toff
ton ton
toff tr
tr

100 100
tf
tf

10 10
0 100 200 300 0 100 200 300
Collector current : Ic [ A ] Collector current : Ic [ A ]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C Vcc=600V, VGE=±15V, Rg=4.7Ω
10000 30
Eoff(125°C)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]

Eon(125°C)
ton 25
toff
1000 20
Eoff(25°C)

15 Eon(25°C)

tr
100 10
Err(125°C)
tf
5
Err(25°C)

10 0
1.0 10.0 100.0 0 100 200 300
Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 4.7Ω ,Tj <= 125°C
150 400
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Eon
300
Collector current : Ic [ A ]

100

200

50
Eoff
100

Err
0 0
1.0 10.0 100.0 0 400 800 1200
Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]
2MBI150UB-120 IGBT Module

Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip Vcc=600V, VGE=±15V, Rg=4.7Ω
400 1000

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
Tj=25°C
Forward current : IF [ A ]

300
trr (125°C)
Irr (125°C)
Irr (25°C)
Tj=125°C
200 100 trr (25°C)

100

0 10
0 1 2 3 4 0 100 200 300
Forward on voltage : VF [ V ] Forward current : IF [ A ]

Transient thermal resistance (max.)

1.000
Thermal resistanse : Rth(j-c) [ °C/W ]

FWD
IGBT
0.100

0.010

0.001
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]

Outline Drawings, mm

M233