Thanks to visit codestin.com
Credit goes to www.scribd.com

Scribd
Upload
120 views1 page

MOS Capacitor Analysis Tasks

This document contains 5 assignments involving MOS capacitors and junctions. The assignments involve estimating potential drops, charges, fields, voltages, capacitance, and sketching band diagrams given various device parameters such as doping concentration, oxide thickness, and fixed charge. The goal is to analyze and model the behavior and characteristics of MOS devices.

Uploaded by

Sure Avinash
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
120 views1 page

MOS Capacitor Analysis Tasks

This document contains 5 assignments involving MOS capacitors and junctions. The assignments involve estimating potential drops, charges, fields, voltages, capacitance, and sketching band diagrams given various device parameters such as doping concentration, oxide thickness, and fixed charge. The goal is to analyze and model the behavior and characteristics of MOS devices.

Uploaded by

Sure Avinash
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

EE 5341 MOS Device Modeling

Assignment 1: MOS Capacitor / Junction

1) An ideal MOS junction / capacitor has Na = 6 x 1015 cm-3 and tox = 0.1 m. It is biased with a gate
to bulk voltage of 5 V. Estimate:
a) potential drops across oxide and silicon.
b) inversion and depletion charges.
c) oxide and surface fields.

2) An Aluminum gate MOS junction / capacitor has Qf/q = 1 x 1010 cm-2. Its other parameters are Na
= 6 x 1015 cm-3 and tox = 0.1 m, which are same as in problem 1). Estimate the following:
a) flat-band and threshold voltages.
b) minimum capacitance of the high frequency C-V curve.
c) repeat (a), if the substrate is changed from p-type to n-type, with the same doping.

3) An Aluminum gate MOS capacitor is fabricated on an n-silicon substrate with Nd = 1015 cm-3, tox =
0.12 m and Qf /q = 3 x 1011 cm-2. Sketch the energy band diagram from gate to substrate at the
onset of inversion to scale, showing the critical values on the diagram.

4) A 0.5 m thick gate oxide is grown on a uniformly doped n-silicon sample with Nd = 1.5 x 1015
cm-3. Assuming the oxide to be charge free, calculate the surface potential and the gate voltage for
making the surface intrinsic.

5) A MOS junction / capacitor has a p-type substrate, a positive fixed charge, ms = 0 and VT < 0.
Sketch the following from gate to substrate, under zero gate to bulk bias.
a) space-charge distribution
b) electric field distribution
c) potential distribution
d) band diagram

You might also like