Systematic Design
of Operational Amplifiers
Willy Sansen
KULeuven, ESAT-MICAS
Leuven, Belgium
[email protected]
Willy Sansen 10-05 061
Table of contents
• Design of Single-stage OTA
• Design of Miller CMOS OTA
• Design for GBW and Phase Margin
• Other specs: Input range, output range, SR, ...
Ref.: Sansen : Analog design essentials, Springer 2006
Willy Sansen 10-05 062
Single-stage CMOS OTA : GBW
VDD ro
M7 Av = gm1
2
IB
if ro2 = ro4 = ro
v- v+
3 M2
M1 1
vOUT BW =
ro
2π (CL+Cn1)
2 1 CL 2
M3 M4 gm1
GBW =
VSS 2π (CL+Cn1)
Willy Sansen 10-05 063
CMOS OTA : Maximum GBW
gm1 IB
GBW = gm1 =
2π CL VGS1-VT
IB
v- v+ IB 1
GBWmax =
CL CL VGS1-VT 2π CL
vOUT+ vOUT- 0.2 V
IB = 10 µA CL = 1 pF GBWmax ≈ 10 MHz
[8]
GBW.CL
FOM = = 1000 [800]
IB MHzpF/mA
Willy Sansen 10-05 064
Single stage CMOS OTA : fnd
VDD gm1
M7 GBW =
2π (CL+Cn1)
IB
v- v+ gm3
M1
3 M2 fnd =
2π Cn2
vOUT
Cn2 ≈ 2CGS3+ CDB3+ CDB1
2 1 CL
≈ 4 CGS3
M3 M4
fT3
VSS fnd ≈
4
Willy Sansen 10-05 065
Simple CMOS OTA : fnd
Av
M5
2x
f
- 3 M2 +
M1 2x f
0o
vOUT -90o
fnd 2fnd
Cn2 2 1 gm3
M3 M4 fnd =
2π Cn2
GBW GBW
PM = 90o - arctan + arctan ≈ 85o
fnd 2 fnd
Willy Sansen 10-05 066
Single stage CMOS OTA : Design 1
GBW = 100 MHz for CL = 2 pF
Techno: Lmin = 0.35 µm; K’n = 60 µA/V2 & K’p = 30 µA/V2
IDS ? W ? L ?
gm = GBW 2π CL = 1.2 mS
VGS-VT gm
VGS-VT = 0.2 V IDS = gm 2 = 10 = 0.12 mA
W IDS Lp = Ln = 1 µm GAIN !
L = K'(VGS-VT)2 =100 Wp = 100 µm; Wn = 50 µm
Willy Sansen 10-05 067
Table of contents
• Design of Single-stage OTA
• Design of Miller CMOS OTA
• Design for GBW and Phase Margin
• Other specs: Input range, output range, SR, ...
Willy Sansen 10-05 068
Miller CMOS OTA
VDD Two nodes
M7 1 : B
M5
1 4
5
vOUT with high
v- v+ 4
3 M2 Cc Impedance
M1
RL CL cause
two poles
2 1 M6
M3 M4 Cn1 split by Cc
VSS
Willy Sansen 10-05 069
Miller CMOS OTA : small-signal
v- v+ Cc 4 vOUT GBW= 1MHz
3 M2
M1 ZL CL = 10 pF
RL = 10 kΩ
2 1 gm1 = 7.5 µS
M6
M3 M4 Cn1 go24 = 0.03 µS
Cn1 = 0.37 pF
1 Cc 4 Cc = 1 pF
gm6 = 246 µS
gLo6 = 120 µS
gm1 go24 Cn1 gm6 gLo6 CLn4 = 10.2 pF
IDS1 = 1.1 µA IDS6 = 25 µA
Willy Sansen 10-05 0610
Miller CMOS OTA : GBW
M7 1 : B gm1 gm6
M5 Av1 = Av2 =
5
go24 gLo6
vOUT BW =
go24
v- v+ 4
3 M2 Cc 2π Av2Cc
M1
RL CL gm1
GBW =
2π Cc
2 1 M6
M4 Cn1
gm6 1
M3 fnd ≈
2π CLn4 Cn1
1+
Cc
Willy Sansen 10-05 0611
Miller CMOS OTA : poles and zero
Cc
fd fz Pole splitting
1pF
starts at
0.1pF
fnd
Cct Cn1
f Cct ≈ ≈ 20 fF
10fF
1k 1M Hz Av2
|Av| Av0
1000 Cc = 0
but is sufficient
for Cc = 1pF
100
10 Cc = 1pF
gm6
BW fz =
1
GBW 2π Cc
0.1 f
1k 1M
Willy Sansen 10-05 0612
Table of contents
• Design of Single-stage OTA
• Design of Miller CMOS OTA
• Design for GBW and Phase Margin
• Other specs: Input range, output range, SR, ...
Willy Sansen 10-05 0613
Miller CMOS OTA: Design plan
gm1
GBW = GBW = 100 MHz and CL = 2 pF
2π Cc
gm6 1
fnd ≈
2π CLn4 Cn1
1+
Cc
Two equations for
Three variables gm1, gm6 and Cc ?!?
Solution : choose gm1 or gm6 or Cc !!!
Willy Sansen 10-05 0614
What is wrong with
choosing Cc = 1 pF ?
Willy Sansen 10-05 0615
Miller CMOS OTA: Design vs Cc
gm1
Choose Cc ≈ 3 Cn1 GBW =
2π Cc
gm6 1
3GBW ≈
2π CLn4 1.3
gm6 CL
≈ 4
gm1 Cc
GBW = 100 MHz and CL = 2 pF
Choose Cn1 < Cc < CL
Choice Cc = 1 pF gives gm1 = 0.6 mS and gm6 = 4.8 mS
Willy Sansen 10-05 0616
Miller CMOS OTA: Design vs Cc
gm gm6min =
gm6
3 GBW (2π CL)
gm1
gm6min
Cc
Ccopt ≈ 4 CL
Willy Sansen 10-05 0617
1 MHz Miller CMOS OTA: Design vs Cc
mS
2
1.8 GBW = 1 MHz
1.6 CL = 10 pF
Cn1 ct
1.4
gmtot 2gm1 Cn1 = 0.4 pF
1.2
1 K’ = 20 µA/V2
0.8
Cn1 ~ gm6 VGS-VT = 0.2 V
0.6
0.4 L = 10 µm
0.2 gm6
0
0.01 0.1 1 10 100
pF Cc
Cn1 = 0.4 pF
Willy Sansen 10-05 0618
Miller CMOS OTA : Design vs IDS6
Area gm6min =
Area Cc 3 GBW (2π CL)
Area M6
gm6
gm6min gm6opt ≈ 1.3 gm6min
+ 30 %
Willy Sansen 10-05 0619
Miller CMOS OTA : Design vs IDS1
Area
Area M6
Area Cc
CL
gm1
Willy Sansen 10-05 0620
Optimum design for high speed Miller OTA - 1
gm1 CL = α Cc α≈2
GBW =
2π Cc
Cc = β Cn1 = β CGS6 β≈3
gm6 1
fnd = fnd = γ GBW γ≈2
2π CL 1 + Cn1/Cc
CGS = kW k = 2 10 -11 F/cm
fnd gm6 1
GBW = =
γ 2π CL γ (1 + 1/ β)
CL = α Cc = α β Cn1 = α β CGS6 = α β kW6 W6 if CL
Willy Sansen 10-05 0621
Optimum design Miller for high speed OTA - 2
Elimination of CL yields
gm6 1 W 17 10-5
GBW = gm =
2π kW6 α β γ (1 + 1/ β) L 1 + 2.8 104 L /VGST
fT6 W, L in cm
1 1 8.5 106
GBW = L in cm
2π L6 α β γ (1 + 1/ β) 1 + 2.8 104 L6 / VGST6
GBW is not determined by CL, only by L (and VGST) !!
fT is also determined by L !!!
Willy Sansen 10-05 0622
Optimum design Miller for high speed OTA - 3
Substitution for fT yields gm
fT =
2πCGS
fT6 1 1.35
GBW = fT =
L 1 + 2.8 104 L / VGST
α β γ (1 + 1/ β)
L in cm
fT in MHz
GBW is not determined by CL, only by fT
fT is determined by L (and VGST) !!!
If VGST = 0.2 V, vsat takes over for L < 65 nm (If 0.5 V for L < 0.15 µm)
Willy Sansen 10-05 0623
Maximum GBW versus channel length L
GBW VGS-VT ≈ 0.2 V
GHz
vsat α≈2
10 β≈3
γ≈2
or 16 x
1
K’
fT6
GBW ≈
16
0.1
10 nm 100 nm L 1 µm
Willy Sansen 10-05 0624
Design optimization for high speed Miller OTA
• Choose α β γ
• Find minimum fT6 for specified GBW
• Choose maximum channel length L6 (max. gain)
for a chosen VGS6-VT
• W6 is calculated from CL ,
and determines IDS6
• Cc is calculated from CL through α
• gm1 and IDS1 are calculated from Cc
• Noise is determined by gm1 or Cc
Willy Sansen 10-05 0625
Design Ex. for GBW = 0.4 GHz & CL = 5 pF
• Choose α β γ 2 3 2
• Minimum fT6 for GBW = 0.4 GHz fT6 = 6.4 GHz
• Maximum channel length L6 L6 = 0.5 µm
for a chosen VGS6-VT = 0.2 V
• L6 is taken to be the minimum L
• W6 is calculated from CL , W6 = 417 µm
and determines IDS6 (K’n = 70 µA/V2) IDS6 = 2.3 mA
and determines Cn1 (k = 2 fF/µm) Cn1 = 0.83 pF
• Cc is calculated from CL through α Cc = 2.5 pF
• gm1 and IDS1 are calculated from Cc IDS1 = 0.63 mA
Willy Sansen 10-05 0626
Optimum design Miller for low speed OTA
fT6 fT
GBW = = i (1 - e - i ) ≈ i for small i
α β γ (1 + 1/ β) fTH
2 µ kT/q
fTH =
2π L2
GBW is not determined by CL, only by fT
fT is determined by L and i !!!
Willy Sansen 10-05 0627
Design optimization for low speed Miller OTA
• Choose α β γ
• Find minimum fT6 for specified GBW
• Choose channel length L6 (max. gain), which gives fTH6
• Calculate i6
• W6 is calculated from CL ,
and determines IDST6 and IDS6
• Cc is calculated from CL through α
• gm1 and IDS1 are calculated from Cc
• Noise is determined by gm1 or Cc
Willy Sansen 10-05 0628
Design Ex. for GBW = 1 MHz & CL = 5 pF
• Choose α β γ 2 3 2
• Minimum fT6 for GBW = 1 MHz fT6 = 16 MHz
• Maximum channel length L6 L6 = 0.5 µm
gives fTH6 fTH6 = 2 GHz
• Inversion coefficient i is i = 0.008
• W6 is calculated from CL , W6 = 417 µm
and determines IDST6 (K’n = 70 µA/V2) IDST6 = 0.33 mA
and determines IDS6 IDS6 = 2.7 µA
and determines Cn1 (k = 2 fF/µm) Cn1 = 0.83 pF
• Cc is calculated from CL through α Cc = 2.5 pF
• gm1 and IDS1 are calculated from Cc IDS1 = 1.6 µA
Willy Sansen 10-05 0629
Table of contents
• Design of Single-stage OTA
• Design of Miller CMOS OTA
• Design for GBW and Phase Margin
• Other : SR, Output Impedance, Noise, ...
Willy Sansen 10-05 0630
Miller CMOS OTA: Specifications 1
1. Introductory analysis
1.1 DC currents and voltages on all nodes
1.2 Small-signal parameters of all transistors
2. DC analysis
2.1 Common-mode input voltage range vs supply Voltage
2.2 Output voltage range vs supply Voltage
2.3 Maximum output current (sink and source)
Willy Sansen 10-05 0631
Miller CMOS OTA: Specifications 2
3. AC and transient analysis
3.1 AC resistance and capacitance on all nodes
3.2 Gain versus frequency : GBW, …
3.3 Gainbandwidth versus biasing current
3.4 Slew rate versus load capacitance
3.5 Output voltage range versus frequency
3.6 Settling time
3.7 Input impedance vs frequency (open & closed loop)
3.8 Output impedance vs frequency (open & closed loop)
Willy Sansen 10-05 0632
Miller CMOS OTA: Specifications 3
4. Specifications related to offset and noise
4.1 Offset voltage versus common-mode input Voltage
4.2 CMRR versus frequency
4.3 Input bias current and offset
4.4 Equivalent input noise voltage versus frequency
4.5 Equivalent input noise current versus frequency
4.6 Noise optimization for capacitive/inductive sources
4.7 PSRR versus frequency
4.8 Distortion
Willy Sansen 10-05 0633
Miller CMOS OTA: Specifications 4
5. Other second-order effects
5.1 Stability for inductive loads
5.2 Switching the biasing transistors
5.3 Switching or ramping the supply voltages
5.4 Different supply voltages, temperatures, ...
Willy Sansen 10-05 0634
M C O : Other specifications
o Common-mode input voltage range
o Output voltage range
o Slew Rate
o Output impedance
o Noise
Willy Sansen 10-05 0635
Miller CMOS OTA
VDD GBW = 1 MHz
M7 1 : B
M5 CL = 10 pF
5 RL = 10 kΩ
vOUT
v- v+ 4
gm1 = 7.5 µS
3 M2 Cc
M1
IDS1 = 1 µA
RL CL go24 = 0.03 µS
2 gm6 = 246 µS
1 M6
IDS6 = 25 µA
M3 M4
VSS Cc = 1 pF
Willy Sansen 10-05 0636
Miller CMOS OTA : CM Input Voltage Range
VICM
3V
2V VDD
1V VICMmax
0V
VICM
-1V
-2V VSS
VICMmin
-3V
0 1V 2V ±2.5V 3V 4V VDD = |VSS|
Willy Sansen 10-05 0637
Miller CMOS OTA : Output Voltage Range
VOUT Rail-to-rail output if no RL
3V VDD
2V VDD VOUTmax M5
1V
4
vOUT
0V
VOUT
-1V RL CL
-2V VSS
VOUTmin
-3V
0 1V 2V ±2.5V 3V 4V VDD = |VSS|
Willy Sansen 10-05 0638
Miller CMOS OTA : Slew Rate - 1
1 : B
VDD Switch input :
M7
M5
5
v+ > 1
3 v- > 0
IB1 4 vOUT
v- IB1 C
c
M1
RL CL ∆VOUT
SR =
2 ∆t
1 M6
M3 M4 IB1
VSS SR =
Cc
Willy Sansen 10-05 0639
Miller CMOS OTA : Slew Rate - 2
vIN vIN
t t
vOUT vOUT
VOUTmax
SR
SR SR
SR t t
SR
SR SR Tmax
≈4 VOUTmax ≈
VOUTmaxfmax 4 fmax 4
Willy Sansen 10-05 0640
Miller CMOS OTA : Slew Rate - 3
Vp VOUT
SR
2 VOUTmax ≈
4 fmax
1.5
SR = 2.2 V/µs
1
0.5
0 f
0 0.2M 0.4M 0.6M 0.8M 1MHz
Willy Sansen 10-05 0641
Design for GBW or SR ?
SR IDS1 IDS1 VGS1-VT
= 4π = ≈ 0.1 ... 0.3 V for MOST (si)
GBW gm1 gm1 2
x10
IDS1 nkT
= ≈ 30 … 50 mV for MOST (wi)
gm1 q
ICE1 kT
= ≈ 26 mV for Bipolar trans.
gm1 q
ICE1 kT
= (1 + gm1RE) ≈ ... 0.5 V with RE
gm1 q
Solomon, JSSC Dec 74, 314-332
Willy Sansen 10-05 0642
High SR by gm reduction
VDD
IB IB SR
1:n 2π GBW
n:1
v- v+
M1 M2
= x (n+1)
M3 M4
vOUT
CL
M5 M6
VSS
Ref. Schmoock, JSSC Dec.75, 407-411
Willy Sansen 10-05 0643
External vs internal Slew Rate
VDD
M5
IB
SRint =
IDS5 Cc
IB C
4 vOUT IDS5
c SRext = is larger !
CL
CL
gm6 CL IDS5
=4 =
1 M6 gm1 Cc IDS1
M4 2IDS1
IDS5
VSS ≈2
CL Cc
Willy Sansen 10-05 0644
Slew Rate and settling
vIN
tTOT = tSlew + t0.1
t
VOUT
vOUT 0.1 % VOUT tSlew =
SR
7
SR t0.1 =
2π BW
t
tSlew t0.1 ln (1000) ≈ 7
Willy Sansen 10-05 0645
Miller CMOS OTA Output Impedance
VDD GBW = 1 MHz
M7 1 : B
M5 CL = 10 pF
5
ZOUT
v- v+ 4 ZOUTCL
3 M2 Cc
M1
gm1 = 7.5 µS
RL CL IDS1 = 1 µA
go24 = 0.03 µS
2 1 M6
gm6 = 246 µS
M3 M4
IDS6 = 25 µA
VSS
Cc = 1 pF
Willy Sansen 10-05 0646
Miller CMOS OTA : Output impedance ZOUT
ZOUT 1/go56 ≈ 0.5 MΩ
go24
fz =
open loop 2πCc
Av20
fz ≈ 4.8 kHz
1/gm6 ≈ 4 kΩ
Av10 Av with CL
closed loop
f
fd fz GBW fnd
Willy Sansen 10-05 0647
Miller CMOS OTA : Noise density 1
dvin22 Cc
dvin1 2
1 4 vOUT
vin vn1
go24 Cn1 gLo6 CL
vneq gm1vin gm6vn1
2 4/3 2 2/3
dvin1 ≈ 4kT g df dvin2 ≈ 4kT g df
m1 m6
Willy Sansen 10-05 0648
Miller CMOS OTA : Noise density 2
Dominant on linear frequency scale !
dveq 2
dvin22
dvneq22 =
dvin12 |Av1|2
2/3
4kT df
Av102 gm6 gm1
Av10 =
dvneq22 go24
go24
fz =
f 2πCc
fz GBW fnd
Willy Sansen 10-05 0649
Miller CMOS OTA : Integrated Noise
∞
dvnieq2
A
1
vnieq2 = ∫ 1 + (f/ GBW) 2
0
∞
dx
f ∫ 1+x 2
=
π
2
0
GBW GBWn
π vnieq2 = 4kT 4/3 GBW π
= 2 GBW gm1 2
2 4 kT
vnieq =
3 Cc
Cc = 1pF vRs= 74 µVRMS
Willy Sansen 10-05 0650
Noise density vs integrated noise
A 4/3
dvni 2
= 4kT df
gm
∞
dvni2 4kT
f 2
vni = ∫ 1 + (f/ BW) 2
=
3Cc
BW BWn 0
Noise density (V2/Hz) ~ 1/gm (or RS)
Integrated noise (VRMS) ~ 1/Cc
Willy Sansen 10-05 0651
CMOS Miller OTA layout
IN+
IN- GBW = 1 MHz
VSS
CL = 10 pF
SR = 2.2 V/µs
VDD = 5 V
ITOT = 27 µA
OUT IB
370 MHzpF/mA
VDD
Willy Sansen 10-05 0652
Miller CMOS OTA : Exercise
GBW = 50 MHz for CL = 2 pF : use min. IDS6 !
Techno: Lmin = 0.5 µm; K’n = 50 µA/V2 & K’p = 25 µA/V2
CGS = kW (= CoxWL) and k = 2 fF/ µm
VGS -VT = 0.2 V
Find
gm6 IDS6 W6 Cn1 = CGS6 Cc gm1 IDS1 dvineq2 vinRMS
Willy Sansen 10-05 0653
Conclusion : Table of contents
• Design of Single-stage OTA
• Design of Miller CMOS OTA
• Design for GBW and Phase Margin
• Other specs: Input range, output range, SR, ...
Willy Sansen 10-05 0654