Field Effect Transistor
Types of Field Effect Transistors
There are two basic types of field effect transistors:
(i) Junction field effect transistor (JFET)
(ii) Metal oxide semiconductor field effect transistor (MOSFET)
Junction Field Effect Transistor (JFET)
A junction field effect transistor is a three terminal semiconductor device in
which current conduction is by one type of carrier i.e., electrons or holes.
Symbol of JFET
Working Principle:
(i) When a voltage VDS is applied between drain and source terminals and voltage
on the gate is zero, the two pn junctions at the sides of the bar establish depletion
layers. The electrons will flow from source to drain through a channel between the
depletion layers. The size of these layers determines the width of the channel and
hence the current conduction through the bar.
(ii) When a reverse voltage VGS is applied between the gate and source, the width
of the depletion layers is increased. This reduces the width of conducting channel,
thereby increasing the resistance of n-type bar. Consequently, the current from
source to drain is decreased. On the other hand, if the reverse voltage on the gate is
decreased, the width of the depletion layers also decreases. This increases the
width of the conducting channel and hence source to drain current.
Characteristics of JFET
Drain Characteristics
Transfer Characteristics
Important Terms of JFET
1. Shorted-gate drain current (IDSS): It is the drain current with source short-
circuited to gate (i.e. VGS = 0) and drain voltage (VDS) equal to pinch off voltage. It
is sometimes called zero-bias current.
2. Pinch off Voltage (VP): It is the minimum drain-source voltage at which the
drain current essentially becomes constant.
3. Gate-source cut off voltage VGS (off): It is the gate-source voltage where the
channel is completely cut off and the drain current becomes zero.
Expression for Drain Current (ID)
Where, ID = drain current at given VGS
IDSS = shorted – gate drain current
VGS = gate–source voltage
VGS (off) = gate–source cut off voltage
Parameters of JFET
(i) a.c. drain resistance (rd): It is the ratio of change in drain-source voltage
(∆VDS) to the change in drain current (∆ID) at constant gate-source voltage i.e.
∆VDS
a.c. drain resistance, rd = at constant VGS
∆ID
(ii) Transconductance ( gfs ): It is the ratio of change in drain current (∆ID) to the
change in gate-source voltage (∆VGS) at constant drain-source voltage i.e.
∆ID
Transconductance, gfs = at constant VDS
∆VGS
(iii) Amplification factor ( μ ). It is the ratio of change in drain-source voltage
(∆VDS) to the change in gate-source voltage (∆VGS) at constant drain current i.e.
∆VDS
Amplification factor, μ = at constant ID
∆VGS
JFET Biasing
Self-Bias for JFET
Problem 01
Find VDS and VGS in the following network, given that ID = 5 mA.
Solution:
Problem 02
In a self-bias n-channel JFET, the operating point is to be set at ID = 1.5 mA and
VDS =10 V. The JFET parameters are IDSS= 5 mA and VGS (off) = − 2 V. Find the
values of RS and RD. Given that VDD = 20 V.
Solution:
JFET with Voltage-Divider Bias
Problem 02
Determine ID and VGS for the JFET with voltage-divider bias in the following
network, given that VD = 7V.
Solution:
