EEng-6024
Power System II
Advanced Power electronics and Drives
Yoseph Mekonnen
Page 1
Lecture 2
Power Electronic Devices
Page 2
Outline
Bipolar Junction Transistors (BJT)
Power MOSFETs
Silicon Controlled Rectifiers (SCR)
Gate Turn off (GTO)
Insulated Gate Bipolar Transistor (IGBT)
Page 3
Power Transistors
Have controlled turn-on and turn off characteristics
Operated in the saturation region to be used for switching
purpose resulting in a low-on-state voltage drop.
There switching speed is higher than thyristors but they have
lower voltage and current ratings.
There are mostly used from low-to- medium voltage
applications.
The Most common Power Transistor Families are.
1. Bipolar junction transistors(BJTs)
2. Metal Oxide Semiconductor Field-Effect Transistors
(MOSFETs)
3. Static Induction Transistors (SITs)
4. Insulated Gate Bipolar Transistors (IGBTs)
5. COOLMOS
Page 4
Bipolar Junction Transistor
A BJT is formed by adding a second p- or n- region to a pn
junction diode. (becomes PNP or NPN)
Has controlled turn on and turn off characteristics.
Has two junction (CBJ and BEJ)
CBJ-Collector – base Junction
BEJ-Base- Emitter Junction
Has Three configuration
The common base, common emitter
and common collector configuration.
Common Emitter configuration is
used for switching application.
Fig. common collector, common emitter, common base
Page 5
Steady-State Characteristics
Consider a common emitter transistor
Fig. Output Characteristics
Fig. CE circuit diagram
Fig. Input Characteristics Plot IC as f(VCE, IB)
Operating Regions (IB) Cutoff region (off)
Plot IB vs VCE)
Active region The transistor is off or the
As VCE increases, more VBE base current is not enough to
Transistor amplifies required to turn the BE on so that turn it on and both junctions
base current. IB>0. are reverse biased.
As IB increase VCE
Active region
decreases.
•BEJ Forward biased
Saturation Region
•CBJ Reverse biased
IB is high hence VCE Saturation region (on)
low
•both BE and BC forward
Acts as a Switch biased
Fig. Transfer
Characteristics
Page 6
…contd..
Large Signal Model Analysis
Page 7
…contd..
Consider the Circuit
IC = βFIB
Page 8
…contd..
Consider the Circuit
Page 9
…contd..
Consider the Circuit
Page 10
…contd..
Example
Solution
Page 11
…contd..
Example
Solution
Page 12
Reading Assignment
Read the steady state, switching and transient characteristics of
the remaining power Transistor families such as:
1. Metal Oxide Semiconductor Field-Effect Transistors
(MOSFETs)
2. Static Induction Transistors (SITs)
3. Insulated Gate Bipolar Transistors (IGBTs)
4. COOLMOS
including
1. Thyristors
2. GTO
Page 13
Power MOSFETs
A power MOSFET is a voltage controlled device and
requires a small input current.
Has high switching speed.
Power MOSFET
Good switching time
Voltage controlled devices which requires very small
current to switch on.
Have simple gate drive requirement.
Page 14
Thyristor Devices: SCR
SCR: Acts like a diode where you can select when
conduction will start, but not when it stops.
Fig. Two-transistor behavioral model of a thyristor.
Stay off until a gate pulse is applied while VAK> 0.
Once on, behaves like a diode and does not turn off until i
->0.
To stay off (after VAK > 0 again) must have i stay at 0 for
a short time tq-> (10 –l00us)
Page 15
IGBT and GTO
IGBT combines the advantage of BJT and power MOSFET.
Has high input impedance(MOSFETs).
Low on-state conduction loss (BJT).
BJT
Has good on-state characteristics
Long switching time (@ pn-state)
Current controlled devices with small current gain
Requires complex base drive circuit to provide the
base current during on-state.
Power MOSFET
Good switching time
Voltage controlled devices which requires very
small current to switch on.
Have simple gate drive requirement.
GTO
GTO is a special p-n-p-n Thyristor which can be
turned off by negative gate current.
Fig. Two-transistor behavioral model of a GTO thyristor.
Page 16
IGBT
IGBT
Page 17
GTO
GTO is a special p-n-p-n Thyristor which can be turned off by
negative gate current.
Fig. Two-transistor behavioral model of a GTO thyristor.
Page 18
Page 19
