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N Mosfet: Shenzhen Tuofeng Semiconductor Technology Co., LTD

Shenzhen Tuofeng Semiconductor Technology Co., Ltd produces an N MOSFET transistor called the S8205A in a TSSOP-8 package. The S8205A has a maximum drain-source voltage of 20V, continuous drain current of 5A, and on-state drain-source resistance of 0.025 ohms at a gate-source voltage of 4.5V. The device has maximum ratings for power dissipation, thermal resistance, storage temperature, and other electrical characteristics.

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130 views2 pages

N Mosfet: Shenzhen Tuofeng Semiconductor Technology Co., LTD

Shenzhen Tuofeng Semiconductor Technology Co., Ltd produces an N MOSFET transistor called the S8205A in a TSSOP-8 package. The S8205A has a maximum drain-source voltage of 20V, continuous drain current of 5A, and on-state drain-source resistance of 0.025 ohms at a gate-source voltage of 4.5V. The device has maximum ratings for power dissipation, thermal resistance, storage temperature, and other electrical characteristics.

Uploaded by

JUAN
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
SMD Type MOSFET
N MOSFET
Dual N-Channel Enhancement Mode Field Effect Transistor
S8205A
TSSOP-8
Features Unit: mm

5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V


rDS(on) = 0.040 @ VGS = 2.5 V.

Absolute Maximum Ratings Ta = 25


Parameter Symbol Rating Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 8 V
Continuous Drain Current ID 5 A
Pulsed Drain Current IDM 20 A
Maximum Power Dissipation TA = 25 2.0 W
PD
TA = 70 1.6 W
Thermal Resistance,Junction-to-Ambient R JA 78 /W
Thermal Resistance,Junction-to-Case R JC 40 /W
Jumction temperature and Storage temperature Tj.Tstg -55 to +150

1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type MOSFET
N MOSFET
S8205A
Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS VGS = 0 V, ID = 250 A 20 V

Zero Gate Voltage Drain Current IDSS VDS = 16V , VGS = 0V 1 uA

Gate-Body Leakage IGSS VDS = 0V , VGS = 8V 50 nA

Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250uA 0.5 1.0 V


VGS = 4.5V , I D = 5A 0.020 0.025
Drain-Source On-State Resistance * rDS(on)
VGS = 2.5V , ID = 4A 0.035 0.040
On-State Drain Current * ID(on) VDS = 5V , VGS = 4.5V 15 A
Forward Transconductance * gfs VDS = 5V , ID =3A 11 S
Input Capacitance Ciss 700 pF
Output Capacitance Coss VDS = 10 V, VGS = 0 V,f = 1.0 MHz 175 pF
Reverse Transfer Capacitance Crss 85 pF
Total Gate Charge Qg 7 10
Gate-Source Charge Qgs VDS = 10V , VGS = 4.5V , ID = 3A 1.2 nC
Gate-Drain Charge Qgd 1.9
Turn-On Delay Time td(on) 8 16
Rise Time tr VDD = 10V 10 18
ns
Turn-Off Delay Time td(off) ID = 1A , VGS = 4.5V , RG = 6 18 29
Fall Time tf 5 10
Maximum Continuous Drain-Source Diode
IS 1.3 A
Forward Current
Diode Forward Voltage * VSD IS = 1.7 A, VGS = 0 V 0.65 1.2 V

* Pulse test; pulse width 300 s, duty cycle 2 %.

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