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Physics Experiment

The document describes an experiment to measure the photoconductive properties of a light dependent resistor (LDR). The resistance of the LDR decreases when exposed to light due to an increase in mobile charge carriers. The experiment involves measuring the voltage and current across the LDR at different distances from a light source and calculating the resistance using Ohm's law. The results show the resistance of the LDR decreases from 0.37kΩ to 0.14kΩ as the distance from the light source decreases from 15cm to 5cm. The dark resistance of the LDR, measured when no light is present, is 0.35Ω.

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Kush Gautam
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184 views3 pages

Physics Experiment

The document describes an experiment to measure the photoconductive properties of a light dependent resistor (LDR). The resistance of the LDR decreases when exposed to light due to an increase in mobile charge carriers. The experiment involves measuring the voltage and current across the LDR at different distances from a light source and calculating the resistance using Ohm's law. The results show the resistance of the LDR decreases from 0.37kΩ to 0.14kΩ as the distance from the light source decreases from 15cm to 5cm. The dark resistance of the LDR, measured when no light is present, is 0.35Ω.

Uploaded by

Kush Gautam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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6.

17

6. STUDY OF I-V CHARACTERISTICS OF A LIGHT


DEPENDENT RESISTOR
AIM
To measure the photoconductive nature and the dark resistance of the given light
dependent resistor (LDR) and to plot the characteristics of the LDR.

APPARATUS REQUIRED
LDR, Resistor (1 k), ammeter (0 – 10 mA), voltmeter (0 – 10 V), light source, regulated
power supply.

FORMULA
V
R=
By ohm’s law, V =IR (or) I ohm
where R is the resistance of the LDR (i.e) the resistance when the LDR is closed. V and I
represents the corresponding voltage and current respectively.

PRINCIPLE
The photoconductive device is based on the decrease in the resistance of certain
semiconductor materials when they are exposed to both infrared and visible radiation.
The photoconductivity is the result of carrier excitation due to light absorption and the
figure of merit depends on the light absorption efficiency. The increase in conductivity is due to an
increase in the number of mobile charge carriers in the material.
PROCEDURE
1. The connections are given in as shown in Fig. 6.3.1.
2. The light source is switched on and made to fall on the LDR.
3. The corresponding voltmeter and ammeter readings are noted.
4. The procedure is repeated by keeping the light source at different distances from the
LDR.
5. A graph is plotted between resistance and distance of LDR from the light source.
6. The LDR is closed and the corresponding voltmeter and ammeter readings are noted.
The value of the dark resistance can be calculated by Ohm’s law.

1 k ( 0 - 10 m A ) Y
+ _
A
R R
L ig h t (k  )
10 V + +
V LDR
_
_

X
D is t a n c e ( c m )

Fig. 6.1. Circuit diagram Fig. 6.2. Model graph


Observation
17
6.18

Voltmeter reading when the LDR is closed = 5 V


Ammeter reading when the LDR is closed = 14 A

V
R=
Dark resistance = I = 0.35 ohm
Table: To determine the resistances of LDR at different distances

S.N Distance Voltmeter reading Ammeter reading RR


o
(cm) (V) volt (I) mA k

1 15 1 2 0.50
2 15 2 6 0.33
3 15 3 8 0.37
4 15 4 12 0.33
5 15 5 14 0.35
0.37(avg)
6 10 1 6 0.16
7 10 2 12 0.16
8 10 3 18 0.16
9 10 4 24 0.16
10 10 5 30 0.16
0.16(avg)
11 5 1 6 0.16
12 5 2 12 0.16
13 5 3 20 0.15
14 5 4 26 0.15
15 5 5 34 0.14
0.15(avg)

18
6.19

RESULT
1. The characteristics of LDR were studied and plotted.
2. The dark resistance of the given LDR =0.35 ohm

REFERENCES:
1. U.A Bakshi, A.P Godse, “Electronic Devices. Technical Publications”, India,
2008.
2. Robert Diffenderfer,“Electronic Devices: Systems and Applications”, Thomas
Delmer Learning, USA, 2005.

19

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