MẠCH ĐIỆN TỬ THÔNG TIN

(Communication Electronics)

Assoc. Prof. Dr.-Ing. Do-Hong Tuan

Department of Telecommunications Engineering

HoChiMinh City University of Technology
E-mail: [email protected]

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 Outline (1)

Chapter 1: Introduction to Communication Systems

Elements of Communication Systems.
Radio Frequency Metrics.
Parallel-Tuned Circuit, Series-Tuned Circuit.
Impedance Matching.

Chapter 2: Radio Frequency (RF) Power Amplifiers

Class C Amplifier.
Class D Amplifier

Chapter 3: Low Noise Amplifier (LNA)

Chapter 4: Frequency Conversion Circuits (Mixers)

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 Outline (2)

Chapter 5: Oscillators and Frequency Synthesizers

RF Oscilators, Voltage-Controlled Oscillators (VCO)
Phase-Locked Loops (PLLs) and Applications

Chapter 6: Analog Modulation Circuits

Amplitude Modulation
Frequency Modulation
Phase Modulation

Chapter 7: Digital Modulation Circuits

M-ary PSK
M-ary QAM

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 References
[1] J. Rogers, C. Plett, Radio Frequency Integrated Circuit Design, Artech
House, 2003
[2] M. Albulet, RF Power Amplifier, Noble Publishing, 2001
[3] F. Ellinger, RF Integrated Circuits and Technologies, Springer Verlag,
2008
[4] Hoàng Đình Chiến, Mạch Điện Tử Thông Tin, Nhà xuất bản ĐH Quốc
gia TP. HCM, 2010

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 Grading

 30% for midterm examination.

 20% for quiz.

 50% for final examination.

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 Chapter 1:

Introduction to
Communication Systems

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 Classification of RF Applications

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 Wireless Communication Standards (1)

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 Wireless Communication Standards (2)

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 Wireless Communication Standards (3)

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 Wireless Communication Standards (4)

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 Wireless Communication Systems (1)

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Frequency Band in Communication Systems (1)

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Frequency Band in Communication Systems (2)

Microwave frequency allocations according to IEEE

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 Digital Communication System (1)

Terms DSP (digital signal processor) are used in a broad sense; therefore
DSPs include digital signal processor (DSP), field programmable gate
arrays (FPGA), reconfigurable computing (RC), etc.

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 Digital Communication System (2)

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 RF Transceiver Architecture (1)
 A transceiver consists of a transmitter and a receiver.
Example of super-heterodyne transceiver:

(SPDT: Single Pole Double Throw)

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 RF Transceiver Architecture (2)
 A simplified architecture of the super-heterodyne receiver with
single down-conversion:

BP: Band pass, LNA: Low Noise Amplifier,

VCO: Voltage Controlled Oscillator,
ADC: Analogue Digital Converter,
DSP: Digital Signal Processor

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 RF Transceiver Architecture (3)
 Simplified architecture of super-heterodyne receiver with double
down-conversion:

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 RF Transceiver Architecture (4)
 Image rejection receiver: smart techniques for the rejection of the
image frequency without requiring sophisticated filters. Such
techniques are especially useful for applications where the desired RF
and the undesired image signal are so close in frequency that
conventional filtering is not possible.

Hartley image rejection technique Weaver image rejection technique

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 Radio Frequency Metrics (1)
 Units for RF design: In RF (microwave) circuits, power is usually
used to describe signals, noise, or distortion with the typical unit of
measure being decibels above 1 milliwatt (dBm). Voltage and current
are expressed as peak, peak-to-peak, or root-mean-square (rms).
Power in dBm, PdBm, can be related to the power in watts, Pwatt, as

Assuming a sinusoidal voltage waveform, Pwatt is given by

where R is the resistance the voltage is across. Note also that vrms can
be related to the peak voltage vpp by

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 Radio Frequency Metrics (2)
Example (R=50 Ohm):

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 Radio Frequency Metrics (3)
 Distortion
Consider a nonlinear system, e.g. LNAs, mixers, described by the
following equation:
y (t )   0  1 x(t )   2 x 2 (t )   3 x 3 (t )

where y(t) and x(t) is the output and input of the system respectively.

Assume x(t) = Acos(ωt), then from equation we get:

  2 A2   3 3 A3    2 A2    3 A3 
y (t )    0     1 A   cos(t )    cos(2t )    cos(3t )
 2   4   2   4 
Note that the DC (fundamental) magnitude is affected by the even
(odd) harmonic components.
The term with the input frequency is called the fundamental and the
higher order terms the harmonics.

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 Radio Frequency Metrics (4)
Harmonic distortion factors (HDi) provide a measure for the distortion
introduced by each harmonic for a given input signal level (using a single
tone at a given frequency).

HDi is defined as the ratio of the output signal level of the ith harmonic
to that of the fundamental. The total harmonic distortion (THD) is the
geometric mean of the distortion factors.

3𝛼3 𝐴3
Assuming 𝛼1 A ≫ , the second harmonic distortion HD2, the third
4
harmonic distortion HD3 and the total harmonic distortion THD are defined
as:
 A  3 A2
HD 2  2 HD3 
21 41

THD   HD  HD +HD  
2 2 2 1/ 2
2 3 4

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 Radio Frequency Metrics (5)
The 1-dB compression point is defined as the point where the fundamental
gain deviates from the ideal small signal gain by 1 dB:
 3 3 A13 dB 
20 log  1 A1 dB    20 log 1 A1 dB   1  20 log  0.891251 A1 dB 
 4 
(Note that 20 log 0.89125= -1dB, |1-0.89125| = 0.10875)

4 1 1
 A 2
1 dB  0.10875 k
3 3 3

Definition of the 1-dB compression point

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 Radio Frequency Metrics (6)
Intermodulation distortion (IM):
Consider input signal of a nonlinear system as x(t) = Acos1t + Acos2t,
then output signal is given by
 9 3 A3   9 3 A3 
y (t )   0   2 A    1 A 
2
 cos 1t    1 A   cos 2t  
 4   4 
  2 A2    2 A2 
  cos  21t     cos  22t    2 A  cos 1  2  t  
2

 2   2 
 3 3 A3   3 3 A3 
  2 A  cos 1  2  t   
2
 cos  21  2  t     cos  22  1  t  
 4   4 
 3 3 A3   3 3 A3 
  cos  21  2  t     cos  22  1  t  
 4   4 
  3 A3    3 A3 
  cos  31t     cos  32t 
 4   4 
Third order input intercept point IIP3 is defined as the intercept point of the
fundamental component with the third order intermodulation component as
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 Radio Frequency Metrics (7)
3 3 AIIP
3
4 1
1 AIIP 3  3
 2
AIIP 3 
4 3 3
1/2
 4 1 
Therefore, the input IIP3 is: AIIP 3  
 3  3 
and the output IIP3: 1 AIIP 3

The third order intermodulation distortion IM3 is defined as:

3 3 2
IM 3  A  3HD3
4 1
2
AIIP
Note that 2
3
 9.195  AIIP 3 (dB)  A1dB (dB)  10
A1dB

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 Radio Frequency Metrics (8)

Schematic spectrum showing two signals with frequencies f1 and f2

and their intermodulation products.

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 Radio Frequency Metrics (9)

Third order intermodulation (IM3) components

corrupt the signal resulting in distortion

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 Radio Frequency Metrics (10)

Definition of the third order intercept point

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 Radio Frequency Metrics (11)
Dynamic range:
There are many definitions for the dynamic range. We define here spurious
free dynamic range (SFDR). The SFDR is the difference, in dB, between
the fundamental frequency and the highest spur, which could be an
intermodulation harmonic, in the bandwidth of interest.

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 Maximum Power Transfer (1)
 Maximum power transfer:

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 Maximum Power Transfer (2)
Taking the derivative of pL and setting it equal to zero, we find that

This implies

which yields

The power delivered when RL = RTh is

In general, if RL and RTh are the impedances, then the load impedance RL
will be the complex conjugate of the source impedance RTh.
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 Impedance Matching (1)
 Impedance matching is a major problem in RF/microwave circuit
design. Impedance matching consists of transforming a load impedance,
ZL , in the optimal working impedance of the signal source Z.

 Depending on the specific purpose of the circuit, the optimal working

impedance (Z) may assure maximum power delivered to the load,
maximum efficiency or power gain, minimum distortion of the signal
across the load and more.

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 Impedance Matching (2)
 If the RF circuit operates at a fixed frequency or over a narrow
frequency band in comparison with the carrier frequency, the
above requirements must be met at only one frequency, and
narrowband matching networks should be used. Obviously, the
matching circuit must contain L and C in order to specify the
matching frequency ω0.

 If the circuit operates over a wide frequency band, the matching

requirements (or at least some of them) must be met over the entire
frequency range. This requires the use of broadband matching
network.

 At low frequencies (HF, VHF and UHF), the narrowband

impedance matching is usually achieved with lumped element
circuits (will be studied in this course). At higher frequencies,
distributed element networks are most often required.

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 Impedance Matching (3)
 Essential revision

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 Impedance Matching (4)
 Practical components are lossy

(Q: Quality factor)

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Lumped Element Narrowband Matching Networks (1)
 Two-reactance matching networks (L matching network):

(for R < RL) (for R > RL)

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Lumped Element Narrowband Matching Networks (2)
 Three-reactance matching networks: Pi matching network

 This circuit can be used only if:

 Recommended values of Q usually range from 1 to 10.

 The pi matching network is widely used in vacuum-tube transmitters to
match large resistance values. For small resistance values, the inductance
of L becomes unpractically small, while the capacitance of both C1 and C2
becomes very large. This circuit is generally not useful in solid-state RF
Power Amplifiers where the matched resistances are often small.
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Lumped Element Narrowband Matching Networks (3)
 Three-reactance matching networks: T matching network
The T matching network in the below figure is applicable to most
solid-state RF Power Amplifiers.

Its design equations are:

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Lumped Element Narrowband Matching Networks (4)
 Three-reactance matching networks: Two-inductance T matching
network
Another T matching network with two inductances and is also
applicable to many solid-state RF Power Amplifiers.

The design equations are:

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Lumped Element Narrowband Matching Networks (5)
 Three-reactance matching networks: Three-reactance L matching
network
This network is also very useful in solid-state RF Power Amplifiers
because it yields practical components for low values of matched
resistances.

The design equations are:

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 Resonant Circuits (1)
 Parallel resonant circuit:

When this circuit is excited by a current source, and the output is terminated
with an open circuit, the transfer function is

The output voltage, Vout, drops from the resonant value by 2 (or 3 dB)

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 Resonant Circuits (2)
The two 3 dB frequencies of the resonant circuit:

The 3 dB bandwidth of the resonant circuit is the difference between the

two 3 dB frequencies:

The resonant frequency is:

and the value of quality factor Q given by:

where G = 1/R
or

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 Resonant Circuits (3)
 Tapped capacitors and inductors

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