MMST5401
160V PNP SMALL SIGNAL TRANSISTOR IN SOT323
Features Mechanical Data
Epitaxial Planar Die Construction Case: SOT323
Ultra-Small Surface Mount Package Case Material: Molded Plastic. “Green” Molding Compound.
Complementary PNP Type: MMST5551 UL Flammability Rating 94V-0
Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads, Solderable per
Halogen and Antimony Free. “Green” Device (Note 3) MIL-STD-202, Method 208 e3
Qualified to AEC-Q101 Standards for High Reliability Weight: 0.006 grams (Approximate)
PPAP Capable (Note 4)
SOT323 C
E
Top View Device Symbol Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel
MMST5401-7-F AEC-Q101 K4M 7 8 3,000
MMST5401-13-F AEC-Q101 K4M 13 8 10,000
MMST5401Q-7-F Automotive K4M 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
K4M = Product Type Marking Code
YM = Date Code Marking
YM
xxx
K4M Y or Y = Year (ex: F = 2018)
M or M = Month (ex: 3 = March)
Date Code Key
Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027
Code F G H I J K L M N O
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MMST5401 1 of 5 May 2018
www.diodes.com © Diodes Incorporated
Document number: DS30170 Rev. 11 - 2
MMST5401
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -200 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 200 mW
Thermal Resistance, Junction to Ambient (Note 6) RθJA 625 C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage VCBO -160 V IC = -100A, IE = 0
Collector-Emitter Breakdown Voltage VCEO -150 V IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage VEBO -5 V IE = -100A, IC = 0
nA VCB = -120V, IE = 0
Collector Cutoff Current ICBO -50
µA VCB = -120V, IE = 0, TA = +100°C
Emitter Cutoff Current IEBO -50 nA VEB = -3V, IC = 0
ON CHARACTERISTICS (Note 8)
50 IC = -1mA , VCE = -5V
DC Current Gain hFE 60 240 IC = -10mA, VCE = -5V
50 IC = -50mA, VCE = -5V
-0.2 IC = -10mA, IB = -1mA
Collector-Emitter Saturation Voltage VCE(SAT) V
-0.5 IC = -50mA, IB = -5mA
IC = -10mA, IB = -1mA
Base-Emitter Saturation Voltage VBE(SAT) -1 V
IC = -50mA, IB = -5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 6.0 pF VCB = -10V, f = 1MHz, IE = 0
VCE = -10V, IC = -1mA,
Small Signal Current Gain hfe 40 260
f = 1kHz
VCE = -10V, IC = -10mA,
Current Gain-Bandwidth Product fT 100 300 MHz
f = 100MHz
VCE = -5V, IC = -200µA,
Noise Figure NF 8 dB
RS =10Ω, f = 1kHz
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMST5401 2 of 5 May 2018
www.diodes.com © Diodes Incorporated
Document number: DS30170 Rev. 11 - 2
MMST5401
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
10.0
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.0
0.1
0.01
1 10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
10,000 1.0
VCE = 5V
VCE = 5V
0.9
VBE(ON), BASE EMITTER VOLTAGE (V)
TAA ==-50癈
-50°C
0.8
hFE, DC CURRENT GAIN
1,000
TTAA == 150°
150癈C 0.7
0.6 TTAA == 25癈
25°C
100
0.5
0.4
TATA==25°
25癈
C TAA ==150癈
T 150°C
10 TATA==-50°C
-50癈
0.3
0.2
1 0.1
1 10 100 1,000 0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current Fig. 4, Base Emitter Voltage vs. Collector Current
1,000
VCE = 10V
ft, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
MMST5401 3 of 5 May 2018
www.diodes.com © Diodes Incorporated
Document number: DS30170 Rev. 11 - 2
MMST5401
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
A2
SOT323
Dim Min Max Typ
c a
A1 0.00 0.10 0.05
A1 e A2 0.90 1.00 0.95
L
b 0.25 0.40 0.30
c 0.10 0.18 0.11
b
D 1.80 2.20 2.15
E 2.00 2.20 2.10
E1 1.15 1.35 1.30
e 0.650 BSC
e1 1.20 1.40 1.30
F 0.375 0.475 0.425
L 0.25 0.40 0.30
E E1
a 0° 8° --
All Dimensions in mm
F e1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
Y
Value
Dimensions
(in mm)
C 0.650
G 1.300
Y1 G
X 0.470
Y 0.600
Y1 2.500
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device terminals and PCB tracking.
MMST5401 4 of 5 May 2018
www.diodes.com © Diodes Incorporated
Document number: DS30170 Rev. 11 - 2
MMST5401
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
www.diodes.com
MMST5401 5 of 5 May 2018
www.diodes.com © Diodes Incorporated
Document number: DS30170 Rev. 11 - 2
