COMP 103 Lecture 04: MOS Transistor short channel and scaling effects
Reading: Section 3.3 up to page107, Sec 3.5
[All lecture notes are adapted from Mary Jane Irwin, Penn State, which were adapted from Rabaeys Digital Integrated Circuits, 2002, J. Rabaey et al.]
COMP 103.1
MOS Long Channel Equations
When VGS > VT, MOS is ON
Linear: When VDS is small: VDS VGS VT ID = kn W/L [(VGS VT)VDS VDS2/2] When VDS is large: VD VGS VT ID = kn/2 W/L [(VGS VT) 2]
Linear or quadratic dependence on VGS
COMP 103.2
Long Channel I-V Plot (NMOS)
6 5 4
X 10-4
VDS = VGS - VT
VGS = 2.5V
Quadratic dependence
VGS = 2.0V
ID (A)
3
Linear
2 1 0
Saturation VGS = 1.5V VGS = 1.0V
cut-off
0.5
1.5
2.5
VDS (V)
NMOS transistor, 0.25um, Ld = 10um, W/L = 1.5, VDD = 2.5V, VT = 0.4V
COMP 103.3
Short Channel Effects
Behavior of short channel device mainly due to
10
5
sat =105 Constant velocity
Constant mobility (slope = )
Velocity saturation the velocity of the carriers saturates due to scattering (collisions suffered by the carriers)
n (m/s)
0 0
c= 1.5
(V/m) For an NMOS device with L of .25m, only a couple of volts difference between D and S are needed to reach velocity saturation
COMP 103.4
Voltage-Current Relation: Velocity Saturation
For short channel devices Linear: When VDS VGS VT ID = (VDS) kn W/L [(VGS VT)VDS VDS2/2] where (V) = 1/(1 + (V/cL)) is a measure of the degree of velocity saturation For large L or small VDS, approaches 1. Saturation: When VDS = VDSAT VGS VT IDSat = (VDSAT) kn W/L [(VGS VT)VDSAT VDSAT2/2]
COMP 103.5
Velocity Saturation Effects
10
VGS = VDD
Long channel devices Short channel devices
For short channel devices and large enough VGS VT VDSAT < VGS VT so the device enters saturation before VDS reaches VGS VT and operates more often in saturation
VDSAT
VGS-VT
IDSAT has a linear dependence wrt VGS so a reduced amount of current is delivered for a given control voltage
COMP 103.6
Short Channel I-V Plot (NMOS)
2.5 2
X 10-4
Early Velocity Saturation
VGS = 2.5V VGS = 2.0V
Linear dependence
ID (A)
1.5 1 0.5 0 0 0.5 1 1.5
Linear
Saturation
VGS = 1.5V VGS = 1.0V
2.5
VDS (V) NMOS transistor, 0.25um, Ld = 0.25um, W/L = 1.5, VDD = 2.5V, VT = 0.4V
COMP 103.7
MOS ID-VGS Characteristics
X 10-4
6 5 4 3 2 1 0 0 0.5 1
long-channel quadratic
Linear (short-channel) versus quadratic (longchannel) dependence of ID on VGS in saturation Velocity-saturation causes the shortchannel device to saturate at substantially smaller values of VDS 2.5 resulting in a substantial drop in current drive
ID (A)
short-channel linear
1.5
VGS (V)
(for VDS = 2.5V, W/L = 1.5)
COMP 103.8
Short Channel I-V Plot (PMOS)
All polarities of all voltages and currents are reversed
-2
VDS (V)
-1
0 0
VGS = -1.0V VGS = -1.5V VGS = -2.0V
-0.2 -0.4 -0.6 -0.8
VGS = -2.5V
-1 X 10-4
PMOS transistor, 0.25um, Ld = 0.25um, W/L = 1.5, VDD = 2.5V, VT = -0.4V
COMP 103.9
The MOS Current-Source Model
G ID S D ID = 0 for VGS VT 0 ID = k W/L [(VGS VT)VminVmin2/2](1+VDS) for VGS VT 0 with Vmin = min(VGS VT, VDS, VDSAT) B
Determined by the voltages at the four terminals and a set of five device parameters
VT0(V) 0.43 -0.4 (V0.5) 0.4 -0.4 VDSAT(V) 0.63 -1 k(A/V2) 115 x 10-6 -30 x 10-6 (V-1) 0.06 -0.1
NMOS PMOS
COMP 103.10
ID (A)
The Transistor Modeled as a Switch
7 6
x105
Req (Ohm)
5 4 3 2 1 0 0.5 1
VGS VT S Ron D
Modeled as a switch with infinite off resistance and a finite on resistance, Ron
Resistance inversely proportional to W/L (doubling W halves Ron) For VDD>>VT+VDSAT/2, Ron independent of VDD Once VDD approaches VT, Ron increases dramatically 2 15 38 2.5 13 31 Ron (for W/L = 1)
For larger devices divide Req by W/L
1.5
(for VGS = VDD, VDS = VDD VDD/2)
VDD (V)
2.5
VDD(V) NMOS(k) PMOS (k)
COMP 103.11
1 35 115
1.5 19 55
Other (Submicon) MOS Transistor Concerns
Velocity saturation Subthreshold conduction
Transistor is already partially conducting for voltages below VT
Threshold variations
In long-channel devices, the threshold is a function of the length (for low VDS) In short-channel devices, there is a drain-induced threshold barrier lowering at the upper end of the VDS range (for low L)
COMP 103.12
Subthreshold Conductance
10-2
Linear region Quadratic region
ID (A)
Transition from ON to OFF is gradual (decays exponentially) Current roll-off (slope factor) is also affected by increase in temperature
Subthreshold exponential region VT
0 0.5 1 1.5 2 2.5
10-12
VGS (V)
Has repercussions in dynamic circuits and for power consumption
COMP 103.13
Threshold Variations
VT Long-channel threshold
VT Low VDS threshold
L Threshold as a function of the length (for low VDS )
VDS Drain-induced barrier lowering (for low L)
COMP 103.14
Scaling Analysis
Manufacturing allows constant reduction in transistor channel length A reduction of 13% per year, halving every 5 years. Scaling analysis: how reduction in feature size influences the operating characteristics and properties of MOS transistors Three different models are assume:
Full Scaling: everything scales by 1/S Fixed-Voltage scaling: everything scales by 1/S except voltages (supply voltage, threshold voltage)
- Integration issues: 5V was standard, and now 3.3V and 2.5V - Silicon bandgap and built-in junction potentials are material parameters - Scaling Vt is limited: cant turn device 100% off Bad Leakage problems - No more benefits for shorter transistors
General Scaling:
- Device features scale by 1/S - Voltages scale by 1/U
COMP 103.15
Scaling Examples
Parameter Relation Full Scaling General Scaling 1/S 1/U 1/S2 S Fixedvoltage scaling 1/S 1 1/S2 S
W, L, tox Vdd, Vt Area of device Cox Cgate Isat Ron Delay P
COMP 103.16
1/S 1/S W*L 1/tox Cox WL Cox WV V/Isat Ron Cgate Isat V 1/S2 S
