Mdxm answ 8.
– Diode, BJT, MOSFET, Thyristors, GTO, IGFET, IGBT
1. Power electronics is the technology associated with 9.
efficient conversion and control of electric power by using
power semiconductor devices.
- Power electronics encompasses the use of electronic
components, the application of circuit theory and design
techniques, and the development of analytical tools toward
efficient electronic conversion, control, and conditioning of
electric power.
2. - Percentage of Primary energy supply
- Depletion of Function Fuels
- Hazards cause by Burning Fossil Fuels (We need to 10. Apparent Power (S)
reduce consumption of fossil fuels because it causes 11. Real Power (P)
environmental pollution and health hazards) 12. Reactive Power (Q)
3. 13. Unit is Volt-Ampere Reactive (VAR)
14. Unit is Volt-Ampere (VA)
15. Unit is Volt-Ampere Reactive (VAR)
16.
4. Efficient
conversion, conditioning, or processing and control of
electric power using solid-state semiconductor devices in
order to supply high quality power to the load causing
minimum pollution of environment and the utility supply
circuit. 17. Resistive Load, Inductive Load, Capacitive Load
18.
5. Resistive Load:
- Current and voltage are in phase.
- Power factor is unity.
- Consume real power (P) only.
Inductive Load:
- Current lags behind the voltage.
- Power factor is less than unity.
- Consume real power and reactive power.
Capacitive Load:
- Current leads the voltage.
- Power factor is less than unity.
- Consume reactive power (Q) only.
19.
6. - Converter has power switching semiconductor devices
and energy storing elements like inductors and capacitors.
- Resistive elements are avoided in converters because
they cause power loss and reduce efficiency.
▪ Controller switches on/off the switching devices present in
20. Impedance (Z)
the converter.
21. Reactance (X)
7. – Capacitors, Inductors, Resistors, Transformers
22. Resistance (R)
23.
24. 34.
25.
35.
26.
27.
36.
28.
37.
29.
30.
31. 38.
32. (Ans:50Ω, 53. 1o)
33.
39.
51. • Depletion Mode
• Enhancement Mode
52. 53.
40. switching 54. 55.
41. switching, control
42. • Diodes
• Bipolar Junction Transistor (BJT)
• Metal Oxide Semiconductor Field Effect
Transistor(MOSFET)
• Insulated Gate Bipolar Transistor (IGBT)
• Gate Turn Off Switch (GTO)
56. Insulated Gate Bipolar Transistor
43. • 2 regions (P region and N region) 57. • NPN (1 P region sandwich by 2 N regions)
• 2 terminals (Anode (+) and Cathode (-)) • PNP (1 N region sandwich by 2 P regions)
44. Barrier Potential (Knee voltage), Reve • 3 terminals (Gate, Emitter, Collector)
45. • Forward Bias (ON) 58. • Input characteristics like a MOSFET
• Reverse Bias (OFF) • Output characteristics like a BJT
• Breakdown (utilize by special purpose diodes) • Lower turn on resistance
• High switching speed
46. • Construction • Applicable for high power applications
• NPN (1 P region sandwich by 2 N regions) 59.
• PNP (1 N region sandwich by 2 P regions)
• 3 terminals (Base, Emitter, Collector)
47. • VBE = 0.7 V
• IE = IB + IC ; IE ≈ IC
• IC = βIB
48.
60.
49. • N – channel MOSFET, P – channel MOSFET
• 3 terminals (Gate, Source, Drain)
50.
78. line commutated, power factor correction(PFC)
61. Gate Turn Off Switch (GTO) 79. line commutated
62. • 4 layers, 3 junction device 80. power factor correction(PFC)
• 3 terminals (gate, anode, cathode) 81.
63.
64. • To turn on the GTO, a forward bias voltage is applied at
the gate terminal.
• To turn off the GTO, a reverse bias voltage is applied at
the gate terminal.
65. • AC drives
• DC drives or choppers
• AC stabilizing power supplies
66.
1. Diode
2. Insulated Gate Bipolar Transistor (IGBT)
3. MOSFET: N-Channel Enhancement Type
67. Rectifier
68. • Half – Wave Rectifier
• Full – Wave Rectifier
69. Half wave Rectifier
70. Full wave Rectifier(Bridge Type Rectifier)
71. Full wave Rectifier(Bridge Type Rectifier)
72. Center – tapped full – wave transformer
73.
82. Vm=240 √2 to cancel the RMS
74. 83.
75.
84.
76.
77.
85.
93.>
94. >
95. >
86.
96. Armature Voltage Constant in V/rad-s
97. Armature Speed in rad/s
87. 98.
99.
88.
89. 100.
90.
91. 101. Answer:
a. 3.2A, 510.6W, 0.66
b. 3.06A, 466.89W, 0.636
92. 102
103.
104.
105.
(i) Vav = 195 V
(ii) (a) Iav = 5.2 A
106.
