PROBLEMS 83
EelT) = Eo) ~ oF gy
(3.49)
where « and are constants chosen to obtain the best fit to experimental data and
E¢(0) is the limiting value of the band gap at zero Kelvin. The band gap versus tem-
perature dependencies deduced from Eq. (3.49) for Ge, Si, and GaAs are plotted in
Fig. 3.17; the fit parameters are specified in the figure insert. A more complete tabula-
tion of semiconductor band gaps and other pertinent E-k information can be found in
Appendix A of Wolfe et al.'*!
REFERENCES
[1] J. S. Blakemore, “Semiconducting and Other Major Properties of Gallium Arsenide,” J.
Appl. Phys., 53, R123 (Oct., 1982).
[2] S. M. Sze, Physics of Semiconductor Devices, 2nd edition, John Wiley & Sons, Inc., New
York, 1981
[3] J.M. Ziman, Electrons and Phonons, The Theory of Transport Phenomena in Solids, Oxford
University Press, London, 1960.
[4] J.B McKelvey, Solid State and Semiconductor Physics, Harper and Row, New York, 1966.
[5] G. Dressethaus, A. F. Kip, and C. Kittel, “Cyclotron Resonance of Electrons and Holes in
Silicon and Germanium,” Phys. Rev., 98, 368 (1955).
[6] E.G.S. Paige, The Electrical Conductivity of Germanium (Progress in Semiconductors, Vol
8, edited by A. F, Gibson and R. E. Burgess), John Wiley & Sons, Inc., New York, 1964,
[7] H.D, Barber, “Effective Mass and Intrinsic Concentration in
ies, 10, 1039 (1967).
[8] CM. Wolfe, N. Holonyak Jr., and G. E, Stillman, Physical Properties of Semiconductors,
Prentice Hall, Englewood Cliffs, NI, 1989.
icon,” Solid-State Electron-
PROBLEMS
31 Answer the following questions as concisely as possible,
(a) State the Bloch theorem for a one-dimensional system,
(b) The current associated with the motion of electrons in a totally filled energy band (a
band in which all allowed states are occupied) is always identically zero. Briefly explain
why.
(c) Define in words what is meant by a “Brillouin zone.”
(a) Because of crystal symmetry one would expect the one-dimensional E versus k plots
characterizing cubic crystals to be symmetrical about the I’ point. Why aren't the E ver-
sus k plots in Fig. 3.13 symmetrical about the I’ point?
3.2. The Kronig-Penney model solution presented in Subsection 3.2.2 is somewhat unconventional.
‘To indicate why a nonstandard solution approach was presented (and, more generally, to coerce 84 CHAPTER3 ENERGY BAND THEORY
the reader into examining the Kronig-Penney model solution), let us review the usual textbook
approach. (You may wish to consult reference [4], pp. 213-214, to check your answers.)
(a) From the Bloch theorem we know
w(x) = eux)
where w(x) is the unit cell wavefunction. Substitute the above expression for (.x) into
Schrédinger’s equation and obtain the simplest possible differential equation for
u(x) (u(x) for 0
0,b > 0)
What effect will the cited fact have on the effective mass of electrons in the GaAs con-
duction band? Substantiate your conclusion. (Is your answer here in agreement with the
Table 3.1 footnote?)
(b) Electrons in GaAs can transfer from the I minimum to the L minima at sufficiently
high electric fields. If electrons were to transfer from the IP minimum to the L minimum
shown in Fig. 3.13(d), would their effective mass increase or decrease? Explain. (The
constant-energy surfaces about the L minima are actually ellipsoidal, but for simplicity
assume the surfaces to be spherical in answering this question.)
3.8 Like GaAs, GaP crystallizes in the zincblende lattice and the valence band maxima occur at
the ['-point in the first Brillouin zone. Unlike GaAs, the conduction band minima in GaP
occur at the X-points in the Brillouin zone.
(a) Where are the X-points located in k-space?
(b) Is GaP a direct or indirect material? Explain.
(c) Given that the constant energy surfaces at the X-points are ellipsoidal with
milniy = 1.12 and mi/m = 0.22, what is the ratio of the longitudinal length to the max-
imum transverse width of the surfaces?
(@) Picturing only that portion of the constant energy surfaces within the first Brillouin
zone, construct a constant-energy surface diagram characterizing the conduction-band
structure in GaP. 86 CHAPTER3 ENERGY BAND THEORY
3.9 (a) Derive Eq. (3.48).
HINT: Show that Eq. (3.47) can be manipulated into the form
where
VQmiit®)(E ~ ED,
B= Vm?) (E — ED
a
Confirm (quote your reference) that the above k,-k,-k; expression is the defining
‘equation for a prolate spheroid—the ellipsoidal surface formed by the rotation of an el-
lipse about its major axis, 2a and 2B are, respectively, the lengths of the major and
minor axes of the rotated ellipse.
(b) Are the Fig. 3.14 ellipsoidal surfaces for Ge and Si in general agreement with the mi/m}
ratios deduced from Table 3.1? Explain.
3.10 In Table 3 on p. 1318 of R. Piissler, Solid State Electronics, 39, 1311 (1996), there is a listing of
what the author considers to be the most accurate silicon Eg versus temperature data and
the corresponding computed £¢; values from “superior” empirical fits to the experimental
data. Using Eq. (3.49) and the parameters listed in the text Fig, 3.17 insert, compute Eg to 5
places at 50 K intervals from 50 K to 500 K. Compare your computed Eg values with the
tabulated values in the cited reference.