Bipolar Junction Transistors

Dr. Lasith Yasakethu

Bi-polar Junction Transistors (BJT)
• The
• TheBJT
BJTisisconstructed
constructedwith
withthree
three doped
doped semiconductor
semiconductor
regions separated by two pn junctions

• The
• Thethree
threeregions
regionsare
arecalled
calledemitter,
emitter, base,
base, and
and collector

• The
• Theterm
termbipolar
bipolar refers
refers to
to the use of both holes and
electrons as current carriers in the transistor structure
C (collector) C

Base-Collector
B / junction
(base)
BE
Base-Emitter
junction

E (emitter) E
(b) при (c) pp
 Bi-polar Junction Transistors (BJT)
• C (collector)c
Base-Collector
/ junction
(base) Base-Emitter
junction

E (emitter) E
(b) при (c) pp

Standard symbols
Standard BJT symbols - P.
F
B

E
(a) прп (b) pnp
 Common BJT pakages

3 Collector
3 Collector
3 Collector
2
Base
Base
2
1 Emitter Base
2 2 Emitter 1 Emitter
•3
3 21
TO-92 SOT-23 TO-18

(0 Ee c
C(case)

mOU
 Basic BJT operation
• In
• Innormal
normaloperation
operation(e.g.
(e.g.amplifier)
ampli er)base-emitter
base-emitter (BE) junction
is forward-biased and the base-collector (BC) junction is
reverse-biased

BC reverse-
biased

n-p-n

BE forward
biased

(a) прп
fi
 Basic BJT operation
• In
• Innormal
normaloperation
operation(e.g.
(e.g.amplifier)
ampli er)base-emitter
base-emitter (BE) junction
is forward-biased and the base-collector (BC) junction is
reverse-biased

BC reverse-
biased

p-n-p
p-n-p

BE forward-
biased
=

(b) рпр
fi
 Basic BJT operation
• •p-n-p
p-n-ptransistor
transistorisisredrawn
redrawnwithout
without the
the base-to-collector
base-to-collector bias

+ Majority carriers

• BE
• BEjunction
junctionforward
forward biased
biased

Depletion region
• Similar
• Similartotoforward
forwardbiased
biased diode

VEE

• Depletion
• Depletionregion
regionreduces
reduces

••A heavy
A heavycurrent
current ows
flowsdue
dueto
tomajority
majority carriers
carriers
fl
 Basic BJT operation
• •p-n-p
p-n-ptransistor
transistorisisredrawn
redrawnwithout
without the
the base-to-emitter
base-to-emitter bias
+ Minority carriers

• BC
• BCjunction
junctionreverse
reversebiased
biased

\ Depletion region • Similar

• Similartotoreverse
reversebiased
biased diode

Vcc

• Depletion
• Depletionregion
region enlarges
enlarges
••A small current
A small current ows
flowsdue
duetotominority
minority carriers
carriers
fl
 Basic BJT operation
• •p-n-p
p-n-ptransistor
transistordrawn
drawnwith
withnormal
normalbiasing
biasing (combining
(combining previous)
+ Majority carriers + Minority carriers

B
Depletion regions

VEE Vcc

IE = Ic + Is
 BJT Currents

• Emittercurrent
• Emitter current(I(le)
E) isisthe
thesum
sum of
ofthe
the collector
collector current (Ic)
(IC)
and the
and the base
base current
current (1),
(IB),

IE = Ic + IB
• Noticethat
• Notice thatthe
thedirection
directionofofthe
theemitter
emitter current
current of
of the
the
transistor, symbols the direction of conventional current

•• IsIBisisvery
verysmall
smallcompared
compared to
to le
IE or IIc
C
– The
- Themagnitude
magnitudeofofthe
thebase
basecurrent
currentisistypically
typically on
on the
the order
order of
microamperes, as compared to milliamperes for the emitter and
collector currents
 BJT Currents
•• n-p-n
n-p-ntransistor
transistor

It = Ic + Is
D
 BJT Currents
•• p-n-p
p-n-ptransistor
transistor

the
It = Ic + Is
 BJT Parameters
•• Two
Twoimportant
importantparameters, βDC(dc
parameters, pc (dccurrent
currentgain)
gain) and αDC
and apc
are used to analyze a BJT circuits

•• Boc
βDC: :DC
DC current
current gain
– Ratio of the dc
de collector current (Ic)
(IC) to the de
dc base current
current ('B)
(IB)

BoC =
•• Apc
αDC
- Ratioofofthe
– Ratio thedcdecollector
collectorcurrent
current(I(Ic) tothe
C) to thedc
de emitter
emitter current
current
(I
(E.E)

QDC =
Ic
 BJT Parameters
Determine the de current gain pc and the emitter current /E for a transistor where
1 = 50 MA and /c = 3.65 mA.
 BJT Parameters
Determine the de current gain pc and the emitter current /E for a transistor where
1 = 50 MA and /c = 3.65 mA.

Boc = I= 3.65 mA
50 MA
= 73
/E = Ic + 1 = 3.65 mA + 50 MA = 3.70 mA
 BJT Circuit Analysis
BJT Circuit Analysis

Finding transistor currents

currents and
voltages
Re
Vec
+ VBE
Vee
Notations
Notations used:
I: de base current
IF: de emitter current
Ic: de collector current
VE: de voltage at base with respect to emitter
VcB: de voltage at collector with respect to base
VcE: de voltage at collector with respect to emitter
 BJT Circuit Analysis
ViE = 0.7 V

ViB = VBB - VBE

=
Re
WV ) CE Vec
YBE
VRB = IBRe
VBB

IBRB = VBB - BE

VeB - YBE
I = RB
 BJT Circuit Analysis
BJT Circuit Analysis

VCE = Vcc - VR

Re VRe = IcRc
WV

YBE
) CE = Vec
VCE = Vcc - IcRe
VBB
tIc = BaciB.

VeB = VCE - BE
 BJT Circuit Analysis
Determine 1g, Ic, IF, VBE, VcE, and Vce in the circuit of Figure 4-9. The transistor has
a pc = 150.
FIGURE 4-9

ReS 100 h
RB

10 kh
= Vec
10 V
BB
5 V
 BJT Circuit Analysis
YBE = 0.7 V. Calculate the base, collector, and emitter currents
as follows:

в = BB - BE = 5V10- 0.7
kh
V,= 430 MA
RB
Ic = Back = (150) (430 MA) = 64.5 mA
1 = Ic + 1 = 64.5 mA + 430 A = 64.9 mA
Solve for VcE and VcB.
VCE = Vcc - IcRc = 10 V - (64.5 mA)(100 2) = 10 V - 6.45 V = 3.55 V
VCB = VCE - BE = 3.55 V - 0.7 V = 2.85 V
Since the collector is at a higher voltage than the base, the collector-base junction is
reverse-biased.
 BJT Characteristics Curve
• •Analyze
Analyzecollector
collectorcurrent,
current,IIc, varies with
C, varies with the
the collector-to
emittervoltage,
emitter voltage,VcE,
VCE, for
for speci
specified values of
ed values of base
base current,
current, Is
IB

Re

le
V BB is fixed
Vas xed for a
Vac particular
particular IB
B
fi
fi
Ic
BJT Characteristics Curve

1
1

* VCE
0 0.7 V VCE(max)
Saturation Breakdown
region Active region * region
 BJT Characteristics Curve
• Case
Case A:
A: Saturation
Saturation region
– -Assume
Assumethat
thatVVs
BB is set to produce a certain value
value of
of Is
IB and
and Vcc
VCC is
zero
zero
• Both
•Boththe
theBE
BEjunction
junctionand
andthe
theBC
BCjunction
junctionare
areforward-biased
forward-biased (Vs=0.7V
(VB=0.7V
and VE=Vc=
VE=VC= OV)
0V)
– Vec
VCC is
is increased,
increased, VcE
VCE increases
increases as
as the
the collector
collector current
current increases
increases

•• Case B:
Case B: Linear
Linear region
-–When
WhenVce VCEexceeds
exceeds0.7V,0.7V,the
thebase-collector
base-collector junction
junction becomes
becomes
reverse-biased (base-emitter junction is forward-biased)
– I-CIclevels
levelsoff
offand
andremains
remains essentially
essentially constant for aa given
constant for givenvalue
valueofofIsIB
as VcE
as VCE continues
continues to to increase
increase
– The
- Thebelow
belowrelationship
relationship is valid

Ic = BacB.
 BJT Characteristics Curve

• Case C: Breakdown region

– When VCE reaches a sufficiently high voltage, the reverse-biased BC
junction goes into breakdown and the collector current increases rapidly
(base-emitter junction forward biased)
– A transistor should never be operated in this breakdown region
Ic
BJT Characteristics Curve

1
1

* VCE
0 0.7 V VCE(max)
Saturation Breakdown
region Active region * region
• AAfamily
familyofofcharacteristic
characteristiccurves
curvesproduced
produced for
for several
several values of IIs
B

IB6

IBs

IBa

Івз

IBI

Cutoff region 1 = 0
* VcE
 BJT Characteristics Curve

• Cut-off region
– When IB = 0, the transistor is in the cutoff region although there is a
very small collector leakage current
– Non-conducting state of a transistor
– Both junctions reversed biased
– Because IC in cutoff is extremely small, it will usually be neglected in
circuit analysis and VCE = VCC
 Load Line
••Relationship
Relationshipbetween
between Ic
IC and
and Vce
VCE
– Determined
- Determinedby
bythe
theexternal
external components
components

Re

RB
"E Vec
Ig
Vee
 Load Line
• Relationship
. Relationship betweenIcICand
between and Vce
VCE

Vec = IcRet Vce

1' Vec
Ic = VeE +

^y=i

Ver

m= -]

* = VE
Vac
 Operating Point
••The
Theintersection
intersectionofofthe
thetwo
twocurves
curvesde nes the
defines the operating
operating point
(Q-point, quiescent point)

Vec Q- point

IB
Ів

Vec
Vee
fi
 Operating Point
4l
Movement of
Q-point for Vec
Re
different
different levels
of
of Is
IB Q-point
"8,
Q-point
2

Q-point
'в,

Yec Ver
 Operating Point
A le
Va
Ri
Effect of
increasing
increasing Rc
RC R3 > Ra > RI
on load-line
and Q-point Vac

Ver 0-point Q-point

O-point
R;
 Operating Point

Veg
Effect of Re
decreasing Vcc
decreasing VCC Veer > Vec, > Veca
on load-line
Vec
and Q-point Re

0-point 0-point
Veci Q-point Ing
Re

Veci Veca Veci Ver

 BJT Characteristics Curve
•• Saturation
Saturation
– -When
WhenIBIsisisincreased
increasedIIcC is
is increased
increased (I C=βIB) and
(Ic=BIg) and V CE decreases
VcE decreases
-–However
Howeverdueduetotothe
thelimitations
limitationsofofVcc,
VCC,IcICwill
willreach
reachsaturation
saturationIc(sal),
IC(sat) ,
and will not increase further even though Is IB is increased
Ic

Saturation

Cutoff

0 Vce
"CE(sat) Vec
 BJT Characteristics Curve
• A transistor must be properly biased with a dc voltage in order to
operate as a linear amplifier

• DC Bias
– Bias establishes the dc operating point (Q-point) for proper linear
operation of an amplifier.
– If an amplifier is not biased with correct dc voltages on the input and
output, it can go into saturation or cutoff when an input signal is applied

• Linear region operation

– The region along the load line between saturation and cutoff
– As long as the transistor is operated in this region, the output voltage is
ideally a linear reproduction of the input.
 Linear Region Operation
Ic
Saturation point
Ic(sat) Linear region

DC load

Cutoff point

- VCE
Vec
 Linear Region Operation
• Letsfind
• Lets findthe
theDC
DCoperating
operatingvalues
values of
of the
the below circuit

Rc 22200
Re
-W Vcc
10k0 10 V

Box: = 100

3.7 V
 Linear Region Operation
• Letsfind
• Lets findthe
theDC
DCoperating
operatingvalues
values of
of the
the below circuit

Rc 22200
Re Vee - 0.7 V 3.7 V - 0.7 V
-W Ver
10 V
{до= Re 10 k0- = 300 LA
10k0
°co = Poc°o = (100)(300 . A) = 30 mA
VcEQ = Vcc - /coRe = 10 V - (30 mAX220 0) = 3.4 V
Box: = 100

3.7 V
 Linear Region Operation
 Assume a sinusoidal voltage, Vin, is now superimposed on VBB,
causing the IB to vary sinusoidally 100μA above and below its
Q-point value of 300μA

 This, causes the IC to vary 10mA above and below its Q-point
value of 30mA

 As a result of the variation in IC, the VCE varies 2.2V above and
below its Q-point value of 3.4V
 le (mA)
Linear Region Operation

• - Ip = 400 м A

18 = 300 м A
1,51.
9П 1- /8 = 200 MA

10 + VCE (V)
CEO Ver
k Vee
 Waveform
Waveform Distortion
Distortion
, Imput
Transistor is driven into saturation

signal
too close to saturation for the

Saturation

[co
because the Q-point is

given input signal.

- VCE
VoC
Saturation

Transistor is driven into saturation because the Q-point is too close to saturation for the
given input signal.

VcRO
 Waveform
Waveform Distortion
Input
signal
Transistor is driven into cutoff

too close to cutoff for the

because the Q-point is

given input signal.

Ico-

Cutoff = VCE
Voc

Transistor is driven into cutoff because the Q-point is too close to cutoff for the given input signal.
Cutoff

VcRO
 Waveform
Waveform Distortion

Input
saturation and cutoff because the

signal
Saturation
Transistor is driven into both

input signal is too large

Ico

* VCE
Cutoff CC

Saturation

Cutoff
Transistor is driven into both
saturation and cutoff because the
input signal is too large
 Problem
Determine the Q-point for the circuit in Figure and draw the de load line.
Assume pc = 200.

Re
330 h
Var
20 V
47 kO
Ver
10 Y

=
 Re
330 П

Vec
SuLt 20 V
47 k0
Vee
10 V

The Q-point is defined by the values of Ic and Ver.

VBB - VRE = 10 V - 0.7V
In = 47k0 = 198 MA
RB
Ic = Boc% = (200)(198 (A) = 39.6 m
VCE = Vce - IeRe = 20 V - 13.07 V = 6.93 V

The Q-point is at Ic = 39.6 mA and at VcE = 6.93 V.

 le (mA)
Ideal saturation
60.6

39.6-

Ideal cutoff
* VcE (V)
6.93
 Not Only Financialsuccess...
Only Financial success…

"85%
due toofyour
yourpersonality
nancial success is to
and ability
communicate, negotiate, and lead.
Shockingly, only 15% is due to
technical knowledge.

~ Carnegie Institute of Technology

fi