SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2N5301 2N5302 2N5303
DESCRIPTION
·With TO-3 package
·Complement to type 2N4398/4399/5745
·Low collector/saturation voltage
·Excellent safe operating area
APPLICATIONS
·For use in power amplifier and switching
circuits applications.
PINNING
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N5301 40
VCBO Collector-base voltage 2N5302 Open emitter 60 V
2N5303 80
2N5301 40
VCEO Collector-emitter voltage 2N5302 Open base 60 V
2N5303 80
VEBO Emitter-base voltage Open collector 5 V
2N5301/5302 30
IC Collector current A
2N5303 20
IB Base current 7.5 A
PD Total power dissipation TC=25 200 W
Tj Junction temperature 200
Tstg Storage temperature -65~200
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-c Thermal resistance junction to case 0.875 /W
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2N5301 2N5302 2N5303
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2N5301 40
Collector-emitter
VCEO(SUS) 2N5302 IC=0.2A ;IB=0 60 V
sustaining voltage
2N5303 80
2N5301/5302 0.75
Collector-emitter
VCEsat-1 IC=10A; IB=1A V
saturation voltage
2N5303 1.0
2N5301/5302 IC=20A ;IB=2A 2.0
Collector-emitter
VCEsat-2 V
saturation voltage
2N5303 IC=15A ;IB=1.5A 1.5
2N5301/5302 IC=30A ;IB=6A 3.0
Collector-emitter
VCEsat-3 V
saturation voltage
2N5303 IC=20A ;IB=4A 2.0
VBEsat-1 Base-emitter saturation voltage IC=10A; IB=1A 1.7 V
2N5301/5302 1.8
Base-emitter
VBEsat-2 IC=15A ;IB=1.5A V
saturation voltage
2N5303 2.0
2N5301/5302 IC=20A ;IB=2A
Base-emitter
VBEsat-3 2.5 V
saturation voltage
2N5303 IC=20A ;IB=4A
2N5301/5302 IC=15A ; VCE=2V 1.7
Base-emitter
VBE-1 V
on voltage
2N5303 IC=10A ; VCE=2V 1.5
2N5301/5302 IC=30A ; VCE=4V 3.0
Base-emitter
VBE-2 V
on voltage
2N5303 IC=20A ; VCE=4V 2.5
VCE= Rated VCEO; VBE(off)=1.5V 1.0
ICEX Collector cut-off current mA
TC=150 10
ICEO Collector cut-off current VCE=Rated VCEO; IB=0 5.0 mA
ICBO Collector cut-off current VCB=Rated VCBO; IE=0 1.0 mA
IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA
hFE-1 DC current gain IC=1A ; VCE=2V 40
2N5303 IC=10A ; VCE=2V
hFE-2 DC current gain 15 60
2N5301/5302 IC=15A ; VCE=2V
2N5303 IC=20A ; VCE=4V
hFE-3 DC current gain 5
2N5301/5302 IC=30A ; VCE=4V
fT Transition frequency IC=1A ; VCE=10V;f=1.0MHz 2 MHz
2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2N5301 2N5302 2N5303
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
