FDM6296 Single N-Channel Logic-Level PowerTrench® MOSFET

January 2007
FDM6296
Single N-Channel Logic-Level PowerTrench® MOSFET
tm

30V,11.5A, 10.5mΩ
Features General Description
„ Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 11.5A This single N-channel MOSFET in the thermally efficient
„ Max rDS(on) = 15mΩ at VGS = 4.5V, ID = 10A MicroFET package has been specifically designed to perform
well in Point of Load converters. Providing an optimized balance
„ Low Qg, Qgd and Rg for efficient switching performance between rDS(on) and gate charge this device can be effectively
„ RoHS Compliant used as a “high side” control switch or “low side” synchronous
rectifier.

Application
„ Point of Load Converter

„ 1/16 Brick Synchronous Rectifier

Bottom Top

8 D
7 D D 5 4 G
6 D
5
D D 6 3 S

D 7 2 S
1 G
2
3 S D 8 1 S
4 S
S

Power 33

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 11.5
ID A
-Pulsed 40
Power Dissipation (Note 1a) 2.1
PD W
Power Dissipation (Note 1b) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Note 1) 3.0
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
6296 FDM6296 Power 33 7’’ 8mm 3000 units

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDM6296 Rev.E
 FDM6296 Single N-Channel Logic-Level PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 30 V
ΔBVDSS Breakdown Voltage Temperature
ID = 250μA, referenced to 25°C 29 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 μA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 1 1.9 3 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 250μA, referenced to 25°C -5 mV/°C
ΔTJ Temperature Coefficient
VGS = 10V, ID = 11.5A 8.7 10.5
rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 10A 10.6 15 mΩ
VGS = 10V, ID = 11.5A , TJ = 125°C 13 17
gFS Forward Transconductance VDS = 5V, ID = 11.5A 47 S

Dynamic Characteristics
Ciss Input Capacitance 1507 2005 pF
VDS = 15V, VGS = 0V,
Coss Output Capacitance 415 555 pF
f = 1MHz
Crss Reverse Transfer Capacitance 128 170 pF
Rg Gate Resistance VDS = 15mV, f = 1MHz 1.1 Ω

Switching Characteristics
td(on) Turn-On Delay Time 10 20 ns
VDD = 15V, ID = 1.0A
tr Rise Time 5 10 ns
VGS = 10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 27 44 ns
tf Fall Time 13 23 ns
Qg Total Gate Charge at 5V VGS = 5V 12 17 nC
Qgs Gate to Source Gate Charge VDD = 15V 4 nC
ID = 11.5A
Qgd Gate to Drain “Miller” Charge 3 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2A (Note 2) 0.9 1.2 V
trr Reverse Recovery Time 29 ns
IF = 11.5A, di/dt = 100A/μs
Qrr Reverse Recovery Charge 20 nC

Notes:
1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper.

b. 135°C/W when mounted on a

a. 60°C/W when mounted on
minimum pad of 2 oz copper
a 1 in2 pad of 2 oz copper

2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

FDM6296 Rev.E 2 www.fairchildsemi.com

 FDM6296 Single N-Channel Logic-Level PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
40 2.0

DRAIN TO SOURCE ON-RESISTANCE

VGS = 10V VGS = 4.5V PULSE DURATION = 300μs
VGS = 4.0V 1.8 DUTY CYCLE = 2.0%MAX
ID, DRAIN CURRENT (A)

VGS = 3.0V
30 VGS = 3.5V
1.6 VGS = 3.5V

NORMALIZED
20 1.4 VGS = 4.0V
VGS = 3.0V
1.2
10 VGS = 10V
PULSE DURATION = 300μs 1.0
DUTY CYCLE = 2.0%MAX VGS =4.5V
0 0.8
0.0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 25
DRAIN TO SOURCE ON-RESISTANCE

ID = 11.5A ID = 5.8A PULSE DURATION = 300μs

SOURCE ON-RESISTANCE (mΩ)

VGS = 10V DUTY CYCLE = 2.0%MAX
1.4
20
RDS(on), DRAIN TO
NORMALIZED

1.2
15 TJ = 125oC
1.0

10
0.8
TJ = 25oC

0.6 5
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

40 40
IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 300μs VGS = 0V

10
DUTY CYCLE = 2.0%MAX
ID, DRAIN CURRENT (A)

30 VDD = 5V
1 TJ = 125oC

TJ = 125oC 0.1 TJ = 25oC

20

0.01
TJ = 25oC TJ = -55oC
10
1E-3
TJ = -55oC
0 1E-4
0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.3 0.6 0.9 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDM6296 Rev.E 3 www.fairchildsemi.com

 FDM6296 Single N-Channel Logic-Level PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10 3000
VGS, GATE TO SOURCE VOLTAGE(V)

ID = 11.5A

8 Ciss
1000

CAPACITANCE (pF)
VDD = 10V

6
VDD = 15V Coss

4
VDD = 20V
100
2 Crss
f = 1MHz
VGS = 0V
0 30
0 5 10 15 20 25 0.1 1 10
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

100 500

P(PK), PEAK TRANSIENT POWER (W)

rDS(on) LIMITED TA = 25oC
FOR TEMPERATURES
ID, DRAIN CURRENT (A)

100 ABOVE 25oC DERATE PEAK

10 100us
CURRENT AS FOLLOWS:
1ms 150 – T
I = I25 A
------------------------
10ms 125
1
10
100ms
SINGLE PULSE
0.1 TJ = MAX RATED
1s SINGLE PULSE
RθJA = 135oC/W 10s o
RθJA = 135 C/W
DC 1
TA = 25oC
0.01 0.5
-4 -3 -2 -1 0 1 2 3
0.1 1 10 100 10 10 10 10 10 10 10 10
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

Figure 9. Forward Bias Safe Figure 10. Single Pulse Maximum

Operating Area Power Dissipation

2
1 DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL

D = 0.5
0.2
IMPEDANCE, ZθJA

0.1
0.1 0.05
0.02
PDM
0.01

t1
0.01 t2
NOTES:
SINGLE PULSE
DUTY FACTOR: D = t1/t2
o
RθJA = 135 C/W PEAK TJ = PDM x ZθJA x RθJA + TA

1E-3
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)

Figure 11. Transient Thermal Response Curve

FDM6296 Rev.E 4 www.fairchildsemi.com

FDM6296 Single N-Channel Logic-Level PowerTrench® MOSFET

www.fairchildsemi.com
5
FDM6296 Rev.E
 FDM6296 Single N-Channel Logic-Level PowerTrench® MOSFET
TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ OCX™ SILENT SWITCHER® UniFET™
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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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As used herein:
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can be reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I22

FDM6296 Rev. E 6 www.fairchildsemi.com