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FDMS7694 D

The document provides detailed specifications and characteristics for the FDMS7694 N-Channel PowerTrench® MOSFET, including its electrical and thermal ratings, features, and applications. It emphasizes the device's low on-resistance, efficiency, and suitability for various power management applications. Additionally, it includes legal disclaimers regarding product use and intellectual property rights associated with onsemi products.

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ahsen siddique
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0% found this document useful (0 votes)
9 views7 pages

FDMS7694 D

The document provides detailed specifications and characteristics for the FDMS7694 N-Channel PowerTrench® MOSFET, including its electrical and thermal ratings, features, and applications. It emphasizes the device's low on-resistance, efficiency, and suitability for various power management applications. Additionally, it includes legal disclaimers regarding product use and intellectual property rights associated with onsemi products.

Uploaded by

ahsen siddique
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ON Semiconductor

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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDMS7694 N-Channel PowerTrench® MOSFET
FDMS7694
N-Channel PowerTrench® MOSFET
General Description
30 V, 9.5 mΩ
This N-Channel MOSFET has been designed specifically to
Features improve the overall efficiency and to minimize switch node
„ Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.2 A ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
„ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A for low gate charge, low rDS(on), fast switching speed ang body
„ Advanced Package and Silicon combination for low rDS(on) diode reverse recovery performance.
and high efficiency
Applications
„ Next generation enhanced body diode technology,
engineered for soft recovery „ IMVP Vcore Switching for Notebook
„ MSL1 robust package design „ VRM Vcore Switching for Desktop and server
„ 100% UIL tested „ OringFET / Load Switching
„ RoHS Compliant „ DC-DC Conversion

Top Bottom
Pin 1
S D 5 4 G
S
S
G D 6 3 S

D 7 2 S
D S
D D 8 1
D
D
Power 56

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted


Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 20
-Continuous (Silicon limited) TC = 25 °C 44
ID A
-Continuous TA = 25 °C (Note 1a) 13.2
-Pulsed 50
EAS Single Pulse Avalanche Energy (Note 3) 21 mJ
Power Dissipation TC = 25 °C 27
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 4.5
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information


Device Marking Device Package Reel Size Tape Width Quantity
FDMS7694 FDMS7694 Power 56 13 ’’ 12 mm 3000 units

©2011 Semiconductor Components Industries, LLC. 1 Publication Order Number:


October-2017, Rev.3 FDMS7694/D
FDMS7694 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, referenced to 25 °C 16 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 250 μA, referenced to 25 °C -6 mV/°C
ΔTJ Temperature Coefficient
VGS = 10 V, ID = 13.2 A 7.6 9.5
rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 10.5 A 11.1 14.5 mΩ
VGS = 10 V, ID = 13.2 A, TJ = 125 °C 10.6 13.3
gFS Forward Transconductance VDS = 5 V, ID = 13.2 A 55 S

Dynamic Characteristics
Ciss Input Capacitance 1060 1410 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 353 470 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 36 55 pF
Rg Gate Resistance 0.8 1.6 Ω

Switching Characteristics
td(on) Turn-On Delay Time 8.4 17 ns
tr Rise Time VDD = 15 V, ID = 13.2 A, 2 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 18 33 ns
tf Fall Time 1.6 10 ns
Qg Total Gate Charge VGS = 0 V to 10 V 15 22 nC
Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, 7 10 nC
Qgs Gate to Source Charge ID = 13.2 A 3.3 nC
Qgd Gate to Drain “Miller” Charge 2.0 nC

Drain-Source Diode Characteristics


VGS = 0 V, IS = 2.1 A (Note 2) 0.76 1.1
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 13.2 A (Note 2) 0.85 1.2
trr Reverse Recovery Time 23 37 ns
IF = 13.2 A, di/dt = 100 A/μs
Qrr Reverse Recovery Charge 7 14 nC
trr Reverse Recovery Time 18 33 ns
IF = 13.2 A, di/dt = 300 A/μs
Qrr Reverse Recovery Charge 14 26 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a) 50 °C/W when mounted on a b) 125 °C/W when mounted on a


1 in2 pad of 2 oz copper minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 20 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
www.onsemi.com
2
FDMS7694 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

50 5

DRAIN TO SOURCE ON-RESISTANCE


VGS = 4.5 V VGS = 3.5 V
VGS = 4 V
40 4
ID, DRAIN CURRENT (A)

VGS = 4 V

NORMALIZED
30 3
VGS = 5 V
VGS = 10 V VGS = 3.5 V VGS = 4.5 V
20 2

VGS = 5 V
10 1
PULSE DURATION = 80 μs PULSE DURATION = 80 μs VGS = 10 V
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
0 0
0 1 2 3 4 5 0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance


vs Drain Current and Gate Voltage

1.6 30
DRAIN TO SOURCE ON-RESISTANCE

ID = 13.2 A PULSE DURATION = 80 μs


SOURCE ON-RESISTANCE (mΩ)
1.5 DUTY CYCLE = 0.5% MAX
VGS = 10 V
25
1.4
ID = 13.2 A
rDS(on), DRAIN TO
NORMALIZED

1.3 20
1.2

1.1 15
TJ = 125 oC
1.0
10
0.9
TJ = 25 oC
0.8 5
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to


vs Junction Temperature Source Voltage

50 100
PULSE DURATION = 80 μs VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)

DUTY CYCLE = 0.5% MAX


40
ID, DRAIN CURRENT (A)

10
VDS = 5 V

30 TJ = 150 oC
TJ = 150 oC 1
TJ = 25 oC
20
TJ = 25 oC
0.1
10 TJ = -55 oC
TJ = -55 oC
0 0.01
1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode


Forward Voltage vs Source Current

www.onsemi.com
3
FDMS7694 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

10 2000
VGS, GATE TO SOURCE VOLTAGE (V)

ID = 13.2 A VDD = 15 V 1000


8 Ciss

CAPACITANCE (pF)
VDD = 10 V VDD = 20 V
6 Coss

100
4

2 f = 1 MHz
VGS = 0 V Crss

0 10
0 4 8 12 16 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain


to Source Voltage

20 50
IAS, AVALANCHE CURRENT (A)

VGS = 10 V
40
ID, DRAIN CURRENT (A)
10
TJ = 25 oC

TJ = 100 oC 30
VGS = 4.5 V

20
TJ = 125 oC Limited by Package
10
o
RθJC = 4.5 C/W
1 0
0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE (ms) o
TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain


Switching Capability Current vs Case Temperature

100 500
P(PK), PEAK TRANSIENT POWER (W)

VGS = 10 V SINGLE PULSE


RθJA = 125 oC/W
ID, DRAIN CURRENT (A)

10 100us 100
TA = 25 oC

1ms
1 THIS AREA IS 10 ms
LIMITED BY rDS(on) 100 ms 10

SINGLE PULSE 1s
0.1 TJ = MAX RATED
10 s
RθJA = 125 oC/W
o
DC 1
TA = 25 C
0.01 0.5
0.01 0.1 1 10 100200 10
-4
10
-3
10
-2
10
-1
1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

www.onsemi.com
4
FDMS7694 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJA

0.1
0.1 0.05 PDM
0.02
0.01
t1

0.01 t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
o
RθJA = 125 C/W PEAK TJ = PDM x ZθJA x RθJA + TA

0.001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

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5
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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