FDMS7694 D
FDMS7694 D
Is Now
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FDMS7694 N-Channel PowerTrench® MOSFET
FDMS7694
N-Channel PowerTrench® MOSFET
General Description
30 V, 9.5 mΩ
This N-Channel MOSFET has been designed specifically to
Features improve the overall efficiency and to minimize switch node
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.2 A ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A for low gate charge, low rDS(on), fast switching speed ang body
Advanced Package and Silicon combination for low rDS(on) diode reverse recovery performance.
and high efficiency
Applications
Next generation enhanced body diode technology,
engineered for soft recovery IMVP Vcore Switching for Notebook
MSL1 robust package design VRM Vcore Switching for Desktop and server
100% UIL tested OringFET / Load Switching
RoHS Compliant DC-DC Conversion
Top Bottom
Pin 1
S D 5 4 G
S
S
G D 6 3 S
D 7 2 S
D S
D D 8 1
D
D
Power 56
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 4.5
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, referenced to 25 °C 16 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 250 μA, referenced to 25 °C -6 mV/°C
ΔTJ Temperature Coefficient
VGS = 10 V, ID = 13.2 A 7.6 9.5
rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 10.5 A 11.1 14.5 mΩ
VGS = 10 V, ID = 13.2 A, TJ = 125 °C 10.6 13.3
gFS Forward Transconductance VDS = 5 V, ID = 13.2 A 55 S
Dynamic Characteristics
Ciss Input Capacitance 1060 1410 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 353 470 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 36 55 pF
Rg Gate Resistance 0.8 1.6 Ω
Switching Characteristics
td(on) Turn-On Delay Time 8.4 17 ns
tr Rise Time VDD = 15 V, ID = 13.2 A, 2 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 18 33 ns
tf Fall Time 1.6 10 ns
Qg Total Gate Charge VGS = 0 V to 10 V 15 22 nC
Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, 7 10 nC
Qgs Gate to Source Charge ID = 13.2 A 3.3 nC
Qgd Gate to Drain “Miller” Charge 2.0 nC
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 20 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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FDMS7694 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
50 5
VGS = 4 V
NORMALIZED
30 3
VGS = 5 V
VGS = 10 V VGS = 3.5 V VGS = 4.5 V
20 2
VGS = 5 V
10 1
PULSE DURATION = 80 μs PULSE DURATION = 80 μs VGS = 10 V
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
0 0
0 1 2 3 4 5 0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
1.6 30
DRAIN TO SOURCE ON-RESISTANCE
1.3 20
1.2
1.1 15
TJ = 125 oC
1.0
10
0.9
TJ = 25 oC
0.8 5
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)
50 100
PULSE DURATION = 80 μs VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
10
VDS = 5 V
30 TJ = 150 oC
TJ = 150 oC 1
TJ = 25 oC
20
TJ = 25 oC
0.1
10 TJ = -55 oC
TJ = -55 oC
0 0.01
1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
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FDMS7694 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10 2000
VGS, GATE TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
VDD = 10 V VDD = 20 V
6 Coss
100
4
2 f = 1 MHz
VGS = 0 V Crss
0 10
0 4 8 12 16 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
20 50
IAS, AVALANCHE CURRENT (A)
VGS = 10 V
40
ID, DRAIN CURRENT (A)
10
TJ = 25 oC
TJ = 100 oC 30
VGS = 4.5 V
20
TJ = 125 oC Limited by Package
10
o
RθJC = 4.5 C/W
1 0
0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE (ms) o
TC, CASE TEMPERATURE ( C)
100 500
P(PK), PEAK TRANSIENT POWER (W)
10 100us 100
TA = 25 oC
1ms
1 THIS AREA IS 10 ms
LIMITED BY rDS(on) 100 ms 10
SINGLE PULSE 1s
0.1 TJ = MAX RATED
10 s
RθJA = 125 oC/W
o
DC 1
TA = 25 C
0.01 0.5
0.01 0.1 1 10 100200 10
-4
10
-3
10
-2
10
-1
1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation
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FDMS7694 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
NORMALIZED THERMAL
0.2
IMPEDANCE, ZθJA
0.1
0.1 0.05 PDM
0.02
0.01
t1
0.01 t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
o
RθJA = 125 C/W PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.