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VLST Destan : a ee
| Assiqnmert -2
HName f- Ch. ddrthya Sectim: ECE -2
| Rol) Noo + (60 -Q1-735-093
4. |Desemibe constvucttonal teatures and performance
| chavactem tics ef pseudo —omoe loqie and.
Constyuctone Featuves s
@ Transistoy Aman emenh 3 -
Tt consicte of muttiple NMOL draneretovs connected
semes, Fach thansictey acts as 4 past qt for inpud
Su
(i) Tnpuk Stage t-
ate typically has um ov move input terminals , each
connected +2 +the teaminal of NMOS tranuctov,
Louver teammnals of these trancictovs ave comm ly connected
+ qrrund (Wes).
&) Outpt Stage?
Daam teaminal of NMOS trancistow ave connected hon
+o ove getets output node. The node serves ad oudput: .
@) Lead Recistov i
Tt w connected betwen output node and poerdve power
supply (ton)
Pevdormance Chavactemectied 5
@ Speed t-
t+ often crelecavelly fast sertching speeds
() Pooey Concumption +
Consumes stahe powew due to presence of load vestctoy,
Powe dtesipahoy can be vedlucad uo dynamic, op
Gu) Nowe Manging 2 -
Nowe manginm ave tmrted by the
and asymmety between er a Qs) fan-out &
wa te Worked compared “to othey loge darmbcs, toad
menstoy and troneitoy sixes determine the ates drwving
capabr tity , adtectrg chy ability devwve mull plc loach
corthoud degrradectarn m pew-forrmance
(&) Voltage Levels ¢
reg operates woth wltege wel com pab ble roth nimot
| technotegy
2) | Devive pall up +o pul dowry gee ‘love On | NUTS inverter
dower by another NMOL inverter.
Considev the depletm ep
dranattoy tov which Vl =0 “iat
unter all condrbens, an
Burctha assume thet
+p caccade wnverteh ©
Clearly expla aboud ION IMPLANTATION step uv
Ic dalomcathon .
Janbaon te a low-dte Ye paces by
whicly (008 of one clement ove accelevated wnt a
eotid tong , thereby changing the phyptol chemusJ,
ov decdricad porpertres of the tong
Anelzng
Ton— imp
Ton source cooatt
of & dapart mediemtad
torthin ven Gavia)
eletre held 4
| Ths electric tel uv ctong envugr to seponly the dard
metrcedrs ireto cenctrtuerd tone forming a chenged ques
These clarad tors ove than acecloyated +0 desirved
voleorty by cartel] of voltage along the accclenctoy tube.
TH vc rowed into a mao bec? baglv ae tone
ee ton curyerd 4 ot tha ove of tm4
Magnetic field « so sf He only desired dopant
turns though ong an - ‘J ig
Focused beam of dopant tot uv thon pasted horde
X and Y plates
Mechaniem uw almost
cethyedle cel cccilloscope wluch move
scvecn.
Perpendiculow dustance doom semteenductey curface coveted
by anepurrtty ator befove coming to oest J called Poopcted/
Reng (Fr)
Define Chemical Vapour Depacrtin
Chemel vapouy deposrtion (CVD) ww & proce herby
a eolid materi 4 deposrtad dom a vapour by a
chemical ceacbon pccuaying 00 oy th velar of &
norm heeded cube tel curvfacy.
Solid material w obtained as a coabrg Bea. porodler , ov
a single onpstals
Tha Aypread CUD proce ,
ov move votahle precurysow) wludy react od dese
om substrale suvface +0 porduce athe desived daposs :
punng ‘lus proces, lable by-producl ave alo
produced , volude ave cvemoved by qo low thooeg J
peacbn chambe :
plasma
iderhca) +o scanning plates Uae
cael beam ever the
a CUD filme ove generale quite conformal
| Cup filme ave hevdel than similar medemals produced
a ewnvertbena) fabricat parced
CD Bb used ww micao clectaon cs industry 4p make Frlrny
seuing as dielectrics, conduct , pareiveton byes,
oxidathon bates, and epitantal hag
5y | Paeto the omveuit dtagyar of Br—cMos logic. shown
} Qo imped NAND Gate
Ypp oe
i a tN in esl
Explain dhe Cx-Powcess
Czochvolekt Ovysted Gmwth pwc 4a ry bliad
of omyptal qrowth wed py obtaw single oryted
silicon ingot
a Gmuth » the prices whee ~ Pre-exe
ap more molecoles ov (ont ww
bate
cyte] beame
dhery pocitons 1% orp
Electoonic grado etlicern
Gas) ¥ plaad quarts
couerble fav hecbrg
Due +e heeding , the
elicon gh motten
Furnace uv headed above
exec oes ok
> OO
iecd onped i dipped iw
molten £1 and slowly tortld vaton. by onyeeed pull-g
mechanism
Seed Onplal 2 furnaa are onteded in cppocite
drreca ms
Noten Explatw he Nimoag £ 0M0S — fabertachay porcedve
@ nNOS Eabotoadow
@) Proceestng ¥ possed om a singly dal 84. of bale
perty om whic neces P impurrty Bw intheted a
she owslal 4 dweleped-
oe of he Si- substrate
one aboud 75-160
IG) S10, lager nov: A ur
baad ‘Tt allabove the L is
exter voafer 40 pe Sr substredle
the ourfacr, performs 4 ~
banter to dopard thao Ay 4
procensing and odfey p chi subotrahe -
(1) Surdace wy now enclosed wetl
he photo oppose wlicly 1s depos
peal wad and spur hea
oven) dustrilochon of necexevry
Hacked:
(i) Photoresut coahra uy the tanwovered
4p OV ight thaougy mas which
desonbes these avers teto colvely
tranemicsion J +o ake place a4
oe wrth.) transect chanel
phetoveset
(¥) These reqtors re ones erty \ ead eye
mweadily “fined aay + hev wth ~ ofits age
the 4 nal ag punts the a
curdact of tortey 4 uneweld 1
window dehned >y mask Wy 4 Ahan layew ef Sid, Gtatey
Grow over the chip suvdace adtew
femoving the semaine of phortrreniet.
a) qt stucure u oveated by
depoeitong polysilicon on the stp of 4.
n) Further, phetovesiet coadhyy and masking yy 5
alluos the polysilicon +to’ be petleinad, (EB Oe
Altey the, thin oxde o Yemoved to
ose ae areas , These avers ave
detused worthy n-type cae a
heading Se to pil Peo
by) phasing ot destreol 9 “ype \
impure & a he sourea and
deyain +
thican has an und "y, than oxide,
ido acs as a male dung ditham
Ts & abled self-aligning
fwaqaw a thick onde of 8 aban
ove and then meskad worth photresist .
nlao tt ub etched +o seleckel oven
ot the papiticen pe, dvamand souvee.
whee connechr ave_to be made -
&) Now the whde chip hou dapos ts of tho mob! GL)
arte t 4p thicknen of Sum.
oa ek. We and thew elchad tp form +h
rraquered inbercen necbar pattern,
f an avea
lope shoo
10) Y= &+etc)|
below
i
} 2
|
Peay
AL at, HE
rw and
Ler}
2
<
"
S
+
®
a
c
&
ebficrend layout diagvarn
V [LITTTTIVRIC LITITZ 76,
fi i
ly
oresre
vy
PIZIZZTZARUET LEZEN
f °
ra
ctor exits, mig
Yj y
y i
Ai Ay
\PZZ7T TA LZZ AZ N »
Explain various stepe involved! uv Photo Arthuaryap ,
Phot bthography 4 the paves of trandeni geonehrne
ori
shaper 7a mask tb the surface A athens water.
Tt u a priced ted in micoo-taboresdhoy -to pew prob
om a ten dilw w the bulb of cubetse «
| Steps wv Photatthapiagy :
| @) Weev Cleanin
| uledew w cleaned ty eliminate pollutants by “peng toto
| aye and mnie worth detonred western followed by dhyirg
sort ortwogpa- vy
() Pore— bake. and &Pormew, Coxb
Porming th dove 0 tmprove pheteveruet adhesion Enleel Vy, tel (veu}}
|
| Tr hneay ve9l,
So, toad = Knylecd (2|VritmaVot]-
|
| (nto) tl]
|
|
toovk as dvr
nlten one v ON, otha 4 oF
U connected +d gt
fetmmnal of beth transite
cude 4ttad both ah be dver
aveetly wth unged wo Hage
Vw Subctath of nos 4 connecked +0 ground and fubcal *.
of pMos 4 connected +p powoev cupply ‘bo
Men =i and Veen = Vee
Vgs,p = Nin Mop end Voc, p = Venct ~ Vo
Vw Nout NOS pMos-
| (loo t\ro,9) Vor linea’ ete
Wy |Ketixze KOR and NOR orverats oo stranumpectny
fie
@ X0&
B
Z: 4
Sg, eee
g
4
2
4 8B z 4
° ° o a
0 I ' a
( 0 ! A
' ! o + lf
5 —e
8 z
B
4 aaa
&
a iE ee
5 ee ee
a 6 yo
+ & ©
4 Ea
missin, gate wrth Pas Transiehv
ae Trans
Transmission, Gate | Pass Transit: |
toy pmos and pms Ww Ser pmos oY ompe
panel
fe. agnmcraal tanctes i? Be ee lane
donates chovachemstics
curtatle doy both diqdel | o dutebe dv ducal
ord analog ro oa v
Mave avaand complerity her over due +o cing
due +o duc$ -ranusty tyanartov
qenevalty stowey due +o Poterch ably daster due tv
vaghev capacitance lone capacetance. :
Hie stehic pow how stohe pote ;
commu prion kt la i alameda tio cae
135| Draw Uf) crrcutaeh enews mane cnovespoeleng tile
| dtagvam dy nMOS and canos inverters
| (yy manos rnvevters
_.Nad
| Vout
RLS
|(i) cmos tavettew
Nad
|
|
|
& tos
|
ais
\3y |Desiqn & D-FF uaing Transmit) gots lapte
“Tranemicsion — qattes cooled by complemorborry clock
eHechvely tmudte and latch the dake while tovected
marntan the
this enruves Het tho dlip-dap capheves and hell He
D put ot the coved clock ediees providing aebebe
dagrtal stovaq sy clk)
ce]
oe
| Dacre the symbelio kyrt doy the cMos mverfet ond
| corte, the geval emes loge gee dagruk gquedelinas?
Nad
A hd
ctor and pmoe franaurtea in n-woell
Q) Place omoe ranch
and p-wotl cespechvely
dvansicte =) ane td cane
() Aba
ondary iia
(u) Ose metal lagen lov udeveennedting didteverd por? —
of crt bah cout
@) mimeuxe the number
4p ceduct pannerte, capacrtance ard po &) Avoid lon, poll eiCicow wrves since they bos L
0 10 es A tie et
d dtr melas. 7 "4
| yestclanee™ compo e
1) Eneuve there Yave dedieced and sobutt power and
qrund line
@) Place inputs and output pes th accesseble locechons da
| ey qveding and connecim to othev part of the etveuit
w sto extemal pad
iss |\KIhat vw the need fev destabilety 2 larw des
doy testabr lity eT ce
| Design tov Testability
| sof the dovelopment P
undew ecthey & mresouyee —
scheme
Testabitity v
| mre lve ba ty due
Din A vesoUree lmted
ga porcediuve Hat ob wed +o
cen fov maximum effectreneD
umited w aelabi by even
heard erthor +0 aediuce coct in ~
and dip +» tnovense aeltabi lily
involves uncerpowsh addrhoral crveua
sean chains, built—ty self
can cefly mto ohip Loreen
peT tm VLSI des
and design tesctevey such
|tat evyuats, and bomen
ay daculrtets teshry
Destqn doy testability w WLS dos YB exerdal +o entuy)
het fabmested chsps ne drew from ane kind of
manutacun' ;
st obo ay overall test time and thereby cost of
sere and de buggirg
By tnecrpovedang DFT techniques into chep dosgn, tt
become) easier to test tha strucluvel asvectnen of Lip ,
leading +o bégha quality pratucty and dawler ctme-to— |
ha 1a 10). |Almte a she ce
“ “st shat ps tayen and sy bolic diagram
anstahon tp MAS dorm
mes Layew
Nos desgn 4 ama at turaing a spechashon into
masks dav poveessing culo “to “meet the cpeerheccton
(9) Substrate :
Bare wu whack Mos device 4 balk. Ft 4
Aypreably medle up of cilice sewing o4 frundabon +o
cubsequenE yeu
y) Bode layers
Placed mm tp od gubshate i chach as incdetev,
sepav Thae y clabe pesoew! poncu ston when cedat u lao of
ourventt covcbmiovsly flows tee cyesistov :
+pme of oudpet nod
> -tme ametaul, oh
7 ae oi dtc wed ob le ery
Used we strafe aneutt and bs brequest vv modem CMa
(u) PROS transistey PuLll-Up ;
i PMOS can be cendigueved in. deddevenk tory tp ak wv
| an ache pul up toad
= ulherw prop combed PMos pull up ow reduce stxbe
poco censsiny co 4p crestchve pull-ups
> ache. FMos lends powvide Guyrend source pull up poodles a conclanh mwert to -the
ordpust node, wlicl can be ¢ lamented use Panos
gatuyation mole, wth proper! biased qv ,
Ensures & steady cucrrevedl invepective ob wllege ot
ole. coretootlad ape, doy met edge of ouckpa se
>ar P edad ov Bay Appling £
yuk ah RY Whe «wi chek) dtagwam and explain about didtewd
symbels used tov components im Shek Diagram, Draw
the chek and laynd doy a +wo imped CMOS NALD
qoke
A she dieqvow 4 a dieqrammohe re presentabon of
a clip layod het helpe +o abstract a moet) tov
des
el uagqran owe used +> convey Ale layer intorm hon.
wrth He help of cder code
Desa dyes = drecbard eketcl of a layed , vsing
celeud tives to cepresent ‘the vawtout potced lays eucly
a deffusion, me and pebyartieon
waheve pelyttieon ooeier detturm, tensistoa, one vested
and whut mead wives gern dittuscon ov pebystticun ,
| contacts owe toyed.
|For aw noose desqn,
| Gren color u used tev n—didfusimn.
» Red to Lica
| Bus ter ae
* Yellow tr maplarct
# Black for conta oveoy.
CMOS NOND Gate: 19) | Determine —palllpte pall docon aetio of an NMOL inverter
Johan den tinough me or move pars transieton,
oo
Vp Vop
Inv 4
we %
Consider. hoor inverter covrcaded thooughe pos tancictes,
het mx port A ovr, pont B Von , port Voy Vy,
E. dives neues
A cume thon mod transite, te in cetuvethn and
| enhancement mode transistor yo in non — sede on
| Replace doptetion mode drensucty wrth constant ccrverd
eure and enhancement mode dranciety with vestety.
Tavevtev-4 3 -
Fo pull doton transit ,
Ty, eG VOM |= "|
Ata Vas = Vad
=k ee(Wa ~¥) Mas]
i (Gay) Vass} oy ®
Nas, . e, Sumsed ‘
Fas, ead -¥e)
For pull eS transist,
: e We
Taypay 7 es (3s aa)
ca ate, Cray i J
eon ‘
+ '
(Wu-“ep) Ya
Ses | aoe
! =piype pa
Vet aes = = 7 Qu-Yy-e
XL
Not, = Be ig es
wre Qa- Na)- Ne
* Vet = ety 4
= Bes Rr
est sae
dy aN oe
7azpay (4a-Me)
K pus eS Zpuy
Zp, Rpdy
© Taxa Ba U%)-% Men) Ne avy Design a ctek dianaw and layout fa two taped
cmos NAND a Indeeabrg all the reqtons and bye
