Lecture 5
CHAPTER 4: BIPOLAR JUNCTION TRANSISTORS (Continued)
Chapter Outline
4.1 Device Structure and Physical Operation
4.2 Current-Voltage Characteristics
4.3 The BJT as an Amplifier and as a Switch
4.4 BJT Circuits at DC
4.5 Biasing in BJT Amplifier Circuits
4.6 Small-Signal Operation and Models
4.7 Single-Stage BJT Amplifiers
4.8 The Basic BJT Digital Logic Inverter
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4.3 THE BJT AS AN AMPLIFIER AND AS A SWITCH
𝑣𝐵𝐸
ൗ𝑛𝑉
BJT as A Linear Amplifier 𝑖𝐶 = 𝐼𝑆 𝑒 𝑇
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Graphical Analysis for Operating Point
𝑣𝐵𝐸
ൗ𝑛𝑉
𝑖𝐵 = (𝐼𝑆 /β)𝑒 𝑇
𝑉𝐵𝐵 − 𝑣𝐵𝐸
𝑖𝐵 =
𝑅𝐵
Graphical Determination of Signal Components
𝑖𝐶 =
𝑉𝐶𝐶 − 𝑣𝐶𝐸 Changing vi → changing iB →
𝑅𝐶 changing iC → changing vC
𝑉𝐵𝐵 − 𝑣𝐵𝐸
𝑖𝐵 =
𝑅𝐵
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Effects of Bias-Point Location on Allowable Signal Swing
Positive
swing
Determination of the load Resistance
Negative
swing
𝑉𝐶𝐶 − 𝑣𝐶𝐸
Determination of the Bias Current 𝑖𝐶 =
𝑅𝐶
High current level
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Operation as a Switch
Edge of Saturation (EOS)
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4.4 BJT CIRCUITS AT DC
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DC Analysis for BJT Circuits
If VB = 6V
4.5 Biasing In BJT Amplifier Circuits
Biasing Arrangement Using a Single Power Supply
Vth = VCCR2/(R2+R1) = VBB
Rth = R2//R1= RB
Negative feedback explanation: VC ↗, VE ↘,
Thevenin equivalent VBE ↗, IC ↗, VC ↘
circuit
It keeps VC stable
Biasing Using Two Power Supply
𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸 + 𝐼𝐸 𝑅𝐸 = VEE
𝐼𝐸
𝑅𝐵 + 𝑉𝐵𝐸 + 𝐼𝐸 𝑅𝐸 = VEE
𝛽+1
An Alternative Biasing Arrangement
Biasing using Current Source
5.6 Small-Signal Operation And Models
The Collector Current and The Transconductance
𝑣𝐵𝐸 = 𝑉𝐵𝐸 + 𝑣𝑏𝑒
𝑉𝐵𝐸 𝑣𝑏𝑒 𝑣𝑏𝑒
𝑖𝐶 = 𝐼𝑆 𝑒 𝑉𝑇 𝑒 𝑉𝑇 = 𝐼𝐶 𝑒 𝑉𝑇 (If vbe << VT or small-signal approximation)
Using Maclaurin Series gives 𝑒 𝑥 ≈ 1 + 𝑥
𝑣𝑏𝑒 𝐼𝐶
𝑖𝐶 = 𝐼𝐶 + 𝑖𝑐 ≈ 𝐼𝐶 1+ = 𝐼𝐶 + 𝑣𝑏𝑒
𝑉𝑇 𝑉𝑇
𝐼𝐶
𝑖𝑐 = 𝑣𝑏𝑒 = 𝑔𝑚 𝑣𝑏𝑒
𝑉𝑇
𝜕𝑖𝐶 𝐼𝐶
𝑔𝑚 = =
𝜕𝑣𝐵𝐸 𝑉𝑇
• The transconductance gm is determined by its collector current.
• A graphical interpretation of gm is the slope of the iC-vBE characteristic curve at iC = IC (bias point).
• General, BJTs have relatively high transconductance compared with FET at the same current level
Base Current and The Input Resistance at The Base
𝐼𝑠 𝐼𝑠 𝑉𝑉𝐵𝐸 𝑣𝑉𝑏𝑒 𝑣𝑏𝑒
𝑖𝐵 = = 𝑒 𝑇 𝑒 𝑇 = 𝐼𝐵 𝑒 𝑉𝑇
𝛽 𝛽
If vbe << VT or small-signal approximation
𝑣𝑏𝑒 𝐼𝐵
𝑖𝐵 = 𝐼𝐵 + 𝑖𝑏 ≈ 𝐼𝐵 1+ = 𝐼𝐵 + 𝑣𝑏𝑒
𝑉𝑇 𝑉𝑇
𝐼𝐵 𝐼𝐶
𝑖𝑏 = 𝑣𝑏𝑒 = 𝑣
𝑉𝑇 𝛽𝑉𝑇 𝑏𝑒
𝑣𝑏𝑒 𝛽 𝑉𝑇
𝑟𝜋 = = =
𝑖𝑏 𝑔𝑚 𝐼𝐵
• Resistance rπ is the small-signal input resistance between base and emitter (looking into the base).
• rπ depends directIy on β and is inversely proportional to the bias current IC (bias point).
The Emitter Current and The Input Resistance at The Emitter
Output Resistance Account for Early Effect
Small-Signal Equivalent Circuit Model (I) – The Hybrid- π Model
Small-Signal Equivalent Circuit Model (II) – The T Model
Current amplifier representation
Transconductance amplifier representation
Application of The Small-Signal Equivalent Circuits
Small-Signal Analysis – Example (I)
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Small-Signal Analysis – Example (II)
𝑣𝑖
𝑣𝑜 = −𝛼𝑖𝑒 𝑅𝐶 = −𝛼(− )𝑅𝐶
𝑟𝑒
𝑣𝑜 𝑅𝐶
=𝛼
𝑣𝑖 𝑟𝑒
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